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1. 发明申请

US20130032857A1 Silicon-Germanium Hydrides and Methods for Making and Using Same 失效
标题翻译：硅锗氢化物及其制造和使用方法
公开(公告)号：US20130032857A1
公开(公告)日：2013-02-07
申请号：US13542987
申请日：2012-07-06
申请人： John Kouvetakis , Cole J. Ritter, III , Changwu Hu , Ignatius S.T. Tsong , Andrew Chizmeshya
发明人： John Kouvetakis , Cole J. Ritter, III , Changwu Hu , Ignatius S.T. Tsong , Andrew Chizmeshya
IPC分类号： C01B33/04 , C07F7/08 , H01B1/06 , H01L29/24 , H01L21/205
CPC分类号： C01B6/06 , C23C16/22 , C30B25/02 , C30B29/52 , H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
摘要翻译：本发明提供新的硅锗化合物，它们的合成方法，它们的沉积方法，以及使用这些新化合物制备的半导体结构。

2. 发明申请

US20100012972A1 Silicon-Germanium Hydrides and Methods for Making and Using Same 失效
标题翻译：硅锗氢化物及其制造和使用方法
公开(公告)号：US20100012972A1
公开(公告)日：2010-01-21
申请号：US12093279
申请日：2006-11-21
申请人： John Kouvetakis , Cole J. Ritter III , Changwu Hu , Ignatius S.T. Tsong , Andrew Chizmeshya
发明人： John Kouvetakis , Cole J. Ritter III , Changwu Hu , Ignatius S.T. Tsong , Andrew Chizmeshya
IPC分类号： H01L29/165 , C01B33/00 , C30B25/02 , H01B1/06 , H01L21/20
CPC分类号： C01B6/06 , C23C16/22 , C30B25/02 , C30B29/52 , H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
摘要翻译：本发明提供新的硅锗化合物，它们的合成方法，它们的沉积方法，以及使用这些新化合物制备的半导体结构。

3. 发明授权

US08518360B2 Silicon-germanium hydrides and methods for making and using same 失效
标题翻译：硅锗氢化物及其制造和使用方法
公开(公告)号：US08518360B2
公开(公告)日：2013-08-27
申请号：US13542987
申请日：2012-07-06
申请人： John Kouvetakis , Cole J. Ritter, III , Changwu Hu , Ignatius S. T. Tsong , Andrew Chizmeshya
发明人： John Kouvetakis , Cole J. Ritter, III , Changwu Hu , Ignatius S. T. Tsong , Andrew Chizmeshya
IPC分类号： C01B33/00 , C30B25/02
CPC分类号： C01B6/06 , C23C16/22 , C30B25/02 , C30B29/52 , H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
摘要翻译：本发明提供新的硅锗化合物，它们的合成方法，它们的沉积方法，以及使用这些新化合物制备的半导体结构。

4. 发明授权

US08216537B2 Silicon-germanium hydrides and methods for making and using same 失效
标题翻译：硅锗氢化物及其制造和使用方法
公开(公告)号：US08216537B2
公开(公告)日：2012-07-10
申请号：US12093279
申请日：2006-11-21
申请人： John Kouvetakis , Cole J. Ritter, III , Changwu Hu , Ignatius S. T. Tsong , Andrew Chizmeshya
发明人： John Kouvetakis , Cole J. Ritter, III , Changwu Hu , Ignatius S. T. Tsong , Andrew Chizmeshya
IPC分类号： C01B33/00 , C30B25/02
CPC分类号： C01B6/06 , C23C16/22 , C30B25/02 , C30B29/52 , H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262
摘要： The present invention provides novel silicon-germanium hydride compounds, methods for their synthesis, methods for their deposition, and semiconductor structures made using the novel compounds.
摘要翻译：本发明提供新的硅锗化合物，它们的合成方法，它们的沉积方法，以及使用这些新化合物制备的半导体结构。

5. 发明申请

US20080113186A1 Method for Growing Si-Ge Semiconductor Materials and Devices on Substrates 有权
标题翻译：在基板上生长Si-Ge半导体材料和器件的方法
公开(公告)号：US20080113186A1
公开(公告)日：2008-05-15
申请号：US11662669
申请日：2005-04-08
申请人： John Kouvetakis , Ignatius S.T. Tsong , Changwu Hu , John Tolle
发明人： John Kouvetakis , Ignatius S.T. Tsong , Changwu Hu , John Tolle
IPC分类号： H01L21/20 , C30B25/02 , B32B33/00 , C01B33/06
CPC分类号： B32B15/02 , B82Y10/00 , C30B23/002 , C30B23/02 , C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/02636 , Y10T428/265 , Y10T428/31663
摘要： A method is provided for growing Si—Ge materials on Si(100) with Ge-rich contents (Ge>50 at. %) and precise stoichiometries SiGe, SiGe2, SiGe3 and SiGe4. New hydrides with direct Si—Ge bonds derived from the family of compounds (H3Ge)xSiH4-x (x=1-4) are used to grow uniform, relayed and highly planar films with low defect densities at unprecedented low temperatures between about 300-450° C., circumventing entirely the need of thick compositionally graded buffer layer and lift off technologies. At about 500-700° C., SiGex quantum dots are grown with narrow size distribution, defect-free microstructures and highly homogeneous elemental content at the atomic level. The method provides precise control of morphology, composition, structure and strain via the incorporation of the entire Si/Ge framework of the gaseous precursor into the film. The grown materials possess the required morphological and microstructural characteristics for applications in high frequency electronic and optical systems, as well as templates and buffer layers for development of commercial devices based on high mobility Si and Ge channels.
摘要翻译：提供了一种用于在具有富锗含量（Ge> 50at。％）和精确化学计量的Si（100）上生长Si-Ge材料的方法，SiGe，SiGe 2 Si，SiGe 3， SUB＆gt;和SiGe 4。具有源自化合物族（H 3 3 Ge）的直接Si-Ge键的新型氢化物x Si x 4 x x（x = 1- 4）用于在约300-450℃之间的前所未有的低温下生长具有低缺陷密度的均匀的，中继的和高度平坦的膜，完全避免了厚的成分梯度缓冲层和剥离技术的需要。在约500-700℃下，以较小的分布，无缺陷的微结构和原子水平的高均匀元素含量生长SiGe x X量子点。该方法通过将气态前体的整个Si / Ge骨架结合到膜中来提供形态，组成，结构和应变的精确控制。生长的材料具有在高频电子和光学系统中的应用所需的形态和微结构特征，以及用于基于高迁移率Si和Ge通道开发商业设备的模板和缓冲层。

6. 发明授权

US08821635B2 Method for growing Si-Ge semiconductor materials and devices on substrates 有权
标题翻译：在衬底上生长Si-Ge半导体材料和器件的方法
公开(公告)号：US08821635B2
公开(公告)日：2014-09-02
申请号：US11662669
申请日：2005-04-08
申请人： John Kouvetakis , Ignatius S. T. Tsong , Changwu Hu , John Tolle
发明人： John Kouvetakis , Ignatius S. T. Tsong , Changwu Hu , John Tolle
IPC分类号： C30B25/02 , H01L21/02 , B82Y10/00 , C30B29/52 , B32B15/02 , C30B23/02
CPC分类号： B32B15/02 , B82Y10/00 , C30B23/002 , C30B23/02 , C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/02532 , H01L21/02573 , H01L21/0262 , H01L21/02636 , Y10T428/265 , Y10T428/31663
摘要： Si—Ge materials are grown on Si(100) with Ge-rich contents (Ge>50 at. %) and precise stoichiometries SiGe, SiGe2, SiGe3 and SiGe4. New hydrides with direct Si—Ge bonds derived from the family of compounds (H3Ge)xSiH4-x (x=1-4) are used to grow uniform, relaxed, and highly planar films with low defect densities at unprecedented low temperatures between about 300-450° C. At about 500-700° C., SiGex quantum dots are grown with narrow size distribution, defect-free microstructures and highly homogeneous elemental content at the atomic level. The method provides for precise control of morphology, composition, structure and strain. The grown materials possess the required characteristics for high frequency electronic and optical applications, and for templates and buffer layers for high mobility Si and Ge channel devices.
摘要翻译： Si-Ge材料在具有富锗含量（Ge> 50at。％）和精确化学计量的SiGe，SiGe2，SiGe3和SiGe4的Si（100）上生长。使用衍生自化合物系列（H3Ge）xSiH4-x（x = 1-4）的直接Si-Ge键的新型氢化物在前所未有的低温下生长具有低缺陷密度的均匀，松弛和高平面的膜，约为300 在约500-700℃下，SiGex量子点以较小的分布，无缺陷的微结构和原子级的高均匀元素含量生长。该方法提供形态，组成，结构和应变的精确控制。生长的材料具有高频电子和光学应用所需的特性，以及用于高迁移率Si和Ge通道器件的模板和缓冲层。

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