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1. 发明授权

US5712534A High resistance resistors for limiting cathode current in field emmision displays 失效
标题翻译：用于限制场致发射显示器中阴极电流的高电阻电阻
公开(公告)号：US5712534A
公开(公告)日：1998-01-27
申请号：US688098
申请日：1996-07-29
申请人： John Kichul Lee , David A. Cathey, Jr. , Kevin Tjaden
发明人： John Kichul Lee , David A. Cathey, Jr. , Kevin Tjaden
IPC分类号： H01J1/304 , H01J9/02 , H01J29/04 , H01J31/12 , H01L21/02 , H01L21/822 , H01L27/04 , H01J1/30
CPC分类号： H01L28/24 , H01J9/025 , H01L28/20 , H01J2201/319
摘要： A high resistance resistor for regulating current in a field emission display is integrated into circuitry of the field emission display. The resistor is in electrical communication with emitter sites for the field emission display and with other circuit components such as ground. The high resistance resistor can be formed as a layer of a high resistivity material, such as intrinsic polycrystalline silicon, polycrystalline silicon doped with a conductivity-degrading dopant, lightly doped polysilicon, titanium oxynitride, tantalum oxynitride or a glass type material deposited on a baseplate of the field emission display. Contacts are formed in the high resistivity material to establish electrical communication between the resistor and the emitter sites and between the resistor and the other circuit components. The contacts can be formed as low resistance contacts (e.g., ohmic contacts) or as high resistance contacts (e.g., Schottky contacts).
摘要翻译：用于调节场发射显示器中的电流的高电阻电阻器被集成到场致发射显示器的电路中。电阻器与发射器位置电气连通，用于场发射显示器和其他电路部件，例如接地。高电阻电阻器可以形成为高电阻率材料的层，例如本征多晶硅，掺杂有导电性降解掺杂剂的多晶硅，轻掺杂多晶硅，氮氧化钛，氮氧化钽或沉积在基板上的玻璃类型材料的场发射显示。在高电阻率材料中形成触点，以在电阻器和发射极部位之间以及电阻器和其它电路部件之间建立电连通。触点可以形成为低电阻触点（例如欧姆接触）或作为高电阻触点（例如肖特基触点）。

2. 发明授权

US5585301A Method for forming high resistance resistors for limiting cathode current in field emission displays 失效
标题翻译：用于形成用于限制场致发射显示器中的阴极电流的高电阻电阻的方法
公开(公告)号：US5585301A
公开(公告)日：1996-12-17
申请号：US502388
申请日：1995-07-14
申请人： John K. Lee , David A. Cathey, Jr. , Kevin Tjaden
发明人： John K. Lee , David A. Cathey, Jr. , Kevin Tjaden
IPC分类号： H01J1/304 , H01J9/02 , H01J29/04 , H01J31/12 , H01L21/02 , H01L21/822 , H01L27/04 , H01L21/70
CPC分类号： H01L28/24 , H01J9/025 , H01L28/20 , H01J2201/319
摘要： A method for forming resistors for regulating current in a field emission display comprises integrating a high resistance resistor into circuitry for the field emission display. The resistor is in electrical communication with emitter sites for the field emission display and with other circuit components such as ground. The high resistance resistor can be formed as a layer of a high resistivity material, such as intrinsic polycrystalline silicon, polycrystalline silicon doped with a conductivity-degrading dopant, lightly doped polysilicon, titanium oxynitride, tantalum oxynitride or a glass type material deposited on a baseplate of the field emission display. Contacts are formed in the high resistivity material to establish electrical communication between the resistor and the emitter sites and between the resistor and the other circuit components. The contacts can be formed as low resistance contacts (e.g., ohmic contacts) or as high resistance contacts (e.g., Schottky contacts).
摘要翻译：用于形成用于调节场致发射显示器中的电流的电阻器的方法包括将高电阻电阻集成到用于场发射显示的电路中。电阻器与发射器位置电气连通，用于场发射显示器和其他电路部件，例如接地。高电阻电阻器可以形成为高电阻率材料的层，例如本征多晶硅，掺杂有导电性降解掺杂剂的多晶硅，轻掺杂多晶硅，氮氧化钛，氮氧化钽或沉积在基板上的玻璃类型材料的场发射显示。在高电阻率材料中形成触点，以在电阻器和发射极部位之间以及电阻器和其它电路部件之间建立电连通。触点可以形成为低电阻触点（例如欧姆接触）或作为高电阻触点（例如肖特基触点）。

3. 发明授权

US5770919A Field emission device micropoint with current-limiting resistive structure and method for making same 失效
标题翻译：具有限流电阻结构的场发射器件微点及其制造方法
公开(公告)号：US5770919A
公开(公告)日：1998-06-23
申请号：US775843
申请日：1996-12-31
申请人： Kevin Tjaden , David A. Cathey, Jr. , John K. Lee
发明人： Kevin Tjaden , David A. Cathey, Jr. , John K. Lee
IPC分类号： H01J1/304 , H01J9/02 , H01J1/30
CPC分类号： H01J1/3042 , H01J9/025 , H01J2201/319 , H01J2329/00
摘要： A micropoint assembly of a field emission device ("FED") including a baseplate, one or more conductors formed over the baseplate, and one or more micropoints formed over the conductor(s) is disclosed. The micropoint assembly further includes resistive structures associated with specific FED elements that limit current to a maximum level and minimize impact to remaining elements of the device. Any variation in resistivity is uniformly distributed since the same process is consistently applied across a plurality of element locations.
摘要翻译：公开了一种包括基板，形成在基板上的一个或多个导体以及形成在导体上的一个或多个微点的场致发射器件（“FED”）的微点组件。微点组件还包括与特定FED元件相关联的电阻结构，其将电流限制到最大水平并且最小化对器件的剩余元件的影响。电阻率的任何变化是均匀分布的，因为相同的过程一贯地应用于多个元件位置。

4. 发明授权

US6012958A Field emission device micropoint with current-limiting resistive structure and method for making same 失效
标题翻译：具有限流电阻结构的场发射器件微点及其制造方法
公开(公告)号：US6012958A
公开(公告)日：2000-01-11
申请号：US992166
申请日：1997-12-14
申请人： Kevin Tjaden , David A. Cathey, Jr. , John K. Lee
发明人： Kevin Tjaden , David A. Cathey, Jr. , John K. Lee
IPC分类号： H01J1/304 , H01J9/02
CPC分类号： H01J1/3042 , H01J9/025 , H01J2201/319 , H01J2329/00
摘要： A micropoint assembly of a field emission device ("FED") including a baseplate, one or more conductors formed over the baseplate, and one or more micropoints formed over the conductor(s) is disclosed. The micropoint assembly further indudes resistive structures associated with specific FED elements that limit current to a maximum level and minimize impact to remaining elements of the device. Any variation in resistivity is uniformly distributed since the same process is consistently applied across a plurality of element locations.
摘要翻译：公开了一种包括基板，形成在基板上的一个或多个导体以及形成在导体上的一个或多个微点的场致发射器件（“FED”）的微点组件。微点组件还包括与特定FED元件相关联的电阻结构，其将电流限制到最大水平并且使对器件的剩余元件的影响最小化。电阻率的任何变化是均匀分布的，因为相同的过程一贯地应用于多个元件位置。

5. 发明授权

US6083767A Method of patterning a semiconductor device 失效
标题翻译：图案化半导体器件的方法
公开(公告)号：US6083767A
公开(公告)日：2000-07-04
申请号：US84458
申请日：1998-05-26
申请人： Kevin Tjaden , David H. Wells
发明人： Kevin Tjaden , David H. Wells
IPC分类号： H01J9/02 , H01L21/00
CPC分类号： H01J9/025
摘要： A method for forming semiconductor devices involves defining a pattern of microspheres on a first structure and transferring that pattern of microspheres to a semiconductor structure. The microspheres may then be used as a mask to define features on the semiconductor structure. In this way, it is possible to form semiconductor devices without necessarily using a stepper. This may result in substantial capital savings in semiconductor manufacturing processes.
摘要翻译：一种用于形成半导体器件的方法包括在第一结构上限定微球的图案并将该微球的图案转移到半导体结构。然后可以将微球用作掩模以限定半导体结构上的特征。以这种方式，可以形成半导体器件，而不必使用步进器。这可能导致半导体制造工艺大量资本节省。

6. 发明授权

US5899799A Method and system to increase delivery of slurry to the surface of large substrates during polishing operations 失效
标题翻译：在抛光操作期间增加浆料向大基体表面的输送的方法和系统
公开(公告)号：US5899799A
公开(公告)日：1999-05-04
申请号：US588734
申请日：1996-01-19
申请人： Kevin Tjaden , G. Hugo Urbina
发明人： Kevin Tjaden , G. Hugo Urbina
IPC分类号： B24B37/26 , B24B57/02 , B24D13/12 , B24D13/14 , B24B29/02
CPC分类号： B24B37/26 , B24B57/02
摘要： Grooves are cut into an under pad of a polishing pad assembly formed by an under pad and an over pad. The grooves cause channeling of the over pad so that slurry received on the polishing face of the pad assembly is delivered across the pad assembly's surface in a controlled fashion.
摘要翻译：将沟槽切割成由下垫和上垫形成的抛光垫组件的下垫。凹槽引起上焊盘的通道，使得容纳在焊盘组件的抛光面上的浆料以受控的方式传送穿过焊盘组件的表面。

7. 发明授权

US5831378A Insulative barrier useful in field emission displays for reducing surface leakage 失效
标题翻译：用于减少表面泄漏的场致发射显示器中的绝缘屏障
公开(公告)号：US5831378A
公开(公告)日：1998-11-03
申请号：US918766
申请日：1997-08-25
申请人： J. Brett Rolfson , Kevin Tjaden
发明人： J. Brett Rolfson , Kevin Tjaden
IPC分类号： H01J9/02 , H01L21/3105 , H01J1/16 , H01J1/02 , H01J1/62 , H01J19/10
CPC分类号： H01L21/31053 , H01J9/025 , H01J2201/30426 , H01J2201/319 , H01J2209/0226
摘要： A field emitter display having reduced surface leakage comprising at least one emitter tip surrounded by a dielectric region. The dielectric region is formed of a composite of insulative layers, at least one of which has fins extending toward the emitter tip. A conductive gate, for extracting electrons from the emitter tip, is disposed superjacent the dielectric region. The fins increase the length of the path that leaked electrical charge travels before impacting the gate.
摘要翻译：具有减小的表面泄漏的场发射器显示器包括由电介质区域包围的至少一个发射极尖端。电介质区域由绝缘层的复合体形成，其中至少一个具有朝向发射极尖端延伸的翅片。用于从发射极尖端提取电子的导电栅极设置在电介质区域的上方。在撞击门之前，翅片增加了泄漏电荷行进路径的长度。

8. 发明授权

US5391259A Method for forming a substantially uniform array of sharp tips 失效
标题翻译：用于形成基本均匀的锋利尖端阵列的方法
公开(公告)号：US5391259A
公开(公告)日：1995-02-21
申请号：US184819
申请日：1994-01-21
申请人： David A. Cathey , Kevin Tjaden
发明人： David A. Cathey , Kevin Tjaden
IPC分类号： C23F4/00 , H01J9/02 , H01J9/00
CPC分类号： H01J9/025 , H01J2201/30403
摘要： A method for forming a substantially uniform array of atomically sharp emitter tips, comprising: patterning a substrate with a mask, thereby defining an array; isotropically etching the array to form pointed tips; and removing the mask when substantially all of the tips have become sharp. A mask having a composition and dimensions which enable the mask to remain balanced on the apex of the tips until all of the tips are of substantially the same shape is used to form the array of substantially uniform tips.
摘要翻译：一种用于形成基本上均匀阵列的原子锋利的发射极尖端的方法，包括：用掩模图案化衬底，从而限定阵列; 各向同性蚀刻阵列以形成尖端; 并且当基本上所有的尖端已经变得尖锐时去除掩模。具有使掩模在尖端的顶点上保持平衡的成分和尺寸的掩模，直到所有尖端具有基本相同的形状，以形成基本均匀的尖端的阵列。

9. 发明授权

US5302239A Method of making atomically sharp tips useful in scanning probe microscopes 失效
标题翻译：制造用于扫描探针显微镜的原子锋利尖端的方法
公开(公告)号：US5302239A
公开(公告)日：1994-04-12
申请号：US884482
申请日：1992-05-15
申请人： Fred L. Roe , Kevin Tjaden
发明人： Fred L. Roe , Kevin Tjaden
IPC分类号： G01Q70/18 , B81C1/00 , G01Q70/16 , H01J9/02 , G21K7/00
CPC分类号： G01Q70/16 , B82Y35/00 , H01J9/025 , H01J2201/30457
摘要： An in situ plasma dry etching process for the formation of atomically sharp tips for use in high resolution microscopes in which i) a mask layer is deposited on a substrate, ii) a photoresist layer is patterned superjacent the mask layer at the sites where the tips are to be formed, iii) the mask is selectively removed by plasma etching, iv) after which the substrate is etched in the same plasma reacting chamber, thereby creating sharp microscope tips.
摘要翻译：用于形成用于高分辨率显微镜的原子锋利尖端的原位等离子体干蚀刻工艺，其中i）掩模层沉积在基底上，ii）在尖端的位置处，将图案层叠在掩模层的上方，要形成，iii）通过等离子体蚀刻选择性地除去掩模，iv）然后在相同的等离子体反应室中蚀刻衬底，从而产生尖锐的显微镜尖端。

10. 发明授权

US6165374A Method of forming an array of emitter tips 失效
标题翻译：形成发射器尖端阵列的方法
公开(公告)号：US6165374A
公开(公告)日：2000-12-26
申请号：US354529
申请日：1999-07-15
申请人： David A. Cathey , Kevin Tjaden
发明人： David A. Cathey , Kevin Tjaden
IPC分类号： H01J9/02 , B44C1/22 , H01L21/00
CPC分类号： H01J9/025 , H01J2201/30403
摘要： A method for fabricating sharp asperities. A substrate is provided which has a mask layer disposed thereon, and a layer of micro-spheres is disposed superjacent the mask layer. The micro-spheres are for patterning the mask layer. Portions of the mask layer are selectively removed, thereby forming circular masks. The substrate is isotropically etched, thereby creating sharp asperities.
摘要翻译：一种制造尖锐凹凸的方法。提供了具有设置在其上的掩模层的基板，并且在该掩模层的上方布置一层微球。微球用于图案化掩模层。选择性地去除掩模层的一部分，从而形成圆形掩模。基板被各向同性地蚀刻，从而产生尖锐的凹凸。

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