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    • 1. 发明申请
    • High efficiency group III nitride-silicon carbide light emitting diode
    • 高效率III族氮化硅 - 碳化硅发光二极管
    • US20060060877A1
    • 2006-03-23
    • US10951042
    • 2004-09-22
    • John EdmondJayesh BharathanDavid Slater
    • John EdmondJayesh BharathanDavid Slater
    • H01L33/00
    • H01L33/36H01L33/007
    • A method and resulting structures are disclosed for fabricating a high efficiency high extraction light emitting diode suitable for packaging. The method includes the steps of adding a light emitting active portion of wide-bandgap semiconductor material to a conductive silicon carbide substrate, joining the added active portion to a conductive sub-mounting structure, and removing a portion of the silicon carbide substrate opposite the added active portion to thereby reduce the overall thickness of the joined substrate, active portion and sub-mounting structure. The resulting the sub-mounting structure can be joined to a lead frame with the active portion positioned between the silicon carbide substrate and the sub-mounting structure to thereby use the sub-mounting structure to separate the active portion from the lead frame and avoid undesired electrical contact between the active portion and the lead frame.
    • 公开了一种制造适用于包装的高效率高抽提发光二极管的方法和结果。 该方法包括以下步骤:将宽带隙半导体材料的发光有源部分添加到导电碳化硅基板,将添加的有源部分接合到导电子安装结构,并且将与添加的相邻的碳化硅基板相对的一部分 从而减小接合的基板,有源部分和副安装结构的整体厚度。 所得到的子安装结构可以连接到引线框架,其中有源部分位于碳化硅基板和子安装结构之间,从而使用子安装结构将有源部分与引线框架分开,并避免不必要的 有源部分和引线框架之间的电接触。