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1. 发明授权

US08174037B2 High efficiency group III nitride LED with lenticular surface 有权
标题翻译：高效率III族氮化物LED带透镜表面
公开(公告)号：US08174037B2
公开(公告)日：2012-05-08
申请号：US11082470
申请日：2005-03-17
申请人： John Adam Edmond , David Beardsley Slater, Jr. , Jayesh Bharathan , Matthew Donofrio
发明人： John Adam Edmond , David Beardsley Slater, Jr. , Jayesh Bharathan , Matthew Donofrio
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region.
摘要翻译：公开了一种高效率III族氮化物发光二极管。二极管包括选自由半导体材料和导电材料组成的组的衬底，以及在衬底上或衬底上的III族氮化物基发光区域，以及在发光区域上或上方含有碳化硅的双凸透镜表面。

2. 发明申请

US20090166659A1 High Efficiency Group III Nitride LED with Lenticular Surface 有权
标题翻译：高效率III组氮化物LED与眼表面
公开(公告)号：US20090166659A1
公开(公告)日：2009-07-02
申请号：US12401832
申请日：2009-03-11
申请人： John Adam Edmond , David Beardsley Slater, JR. , Jayesh Bharathan , Matthew Donofrio
发明人： John Adam Edmond , David Beardsley Slater, JR. , Jayesh Bharathan , Matthew Donofrio
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A light emitting diode is disclosed having a vertical orientation with an ohmic contact on portions of a top surface of the diode and a mirror layer adjacent the light emitting region of the diode. The diode includes an opening in the mirror layer beneath the geometric projection of the top ohmic contact through the diode that defines a non-contact area between the mirror layer and the light emitting region of the diode to encourage current flow to take place other than at the non-contact area to in turn decrease the number of light emitting recombinations beneath the ohmic contact and increase the number of light emitting recombinations in the more transparent portions of the diode.
摘要翻译：公开了一种发光二极管，其具有在二极管的顶表面的部分上的欧姆接触的垂直取向和与二极管的发光区相邻的镜层。二极管包括通过二极管的顶部欧姆接触的几何投影下方的镜面层中的开口，其限定了二极管的反射镜层和发光区域之间的非接触区域，以促进电流流过而不是在非接触区域又减少欧姆接触下方的发光复合数，并增加二极管透明部分中发光复合的数量。

3. 发明授权

US07259033B2 Flip-chip bonding of light emitting devices 有权
标题翻译：发光器件的倒装键合
公开(公告)号：US07259033B2
公开(公告)日：2007-08-21
申请号：US10920101
申请日：2004-08-17
申请人： David B. Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter S. Andrews , Gerald H. Negley
发明人： David B. Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter S. Andrews , Gerald H. Negley
IPC分类号： H01L21/00 , H01L21/50
CPC分类号： H01L33/62 , H01L33/38 , H01L2224/04026 , H01L2224/26175 , H01L2224/291 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.
摘要翻译：通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料，并将其安装在基板上，并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上，发光器件死到底座。选择导电芯片附着材料的预定图案，以便当发光器件裸片安装到底座时，防止导电芯片附着材料接触具有相反导电类型的区域。导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。还提供具有预定图案的导电芯片附着材料的发光器件裸片。在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中级环氧树脂。还提供了具有B级可固化模具环氧树脂的发光器件模具。

4. 发明授权

US06747298B2 Collets for bonding of light emitting diodes having shaped substrates 有权
标题翻译：用于结合具有成形衬底的发光二极管的夹头
公开(公告)号：US06747298B2
公开(公告)日：2004-06-08
申请号：US10185350
申请日：2002-06-27
申请人： David B. Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter S. Andrews , Gerald H. Negley
发明人： David B. Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter S. Andrews , Gerald H. Negley
IPC分类号： H01L310328
CPC分类号： H01L33/40 , H01L24/32 , H01L33/20 , H01L33/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48463 , H01L2224/73265 , H01L2924/12032 , H01L2924/12041 , H01L2924/00012 , H01L2924/00
摘要： Bonding of flip-chip mounted light emitting devices having an irregular configuration is provided. Light emitting diodes having a shaped substrate are bonded to a submount by applying forces to the substrate an a manner such that shear forces within the substrate do not exceed a failure threshold of the substrate. Bonding a light emitting diode to a submount may be provided by applying force to a surface of a substrate of the light emitting diode that is oblique to a direction of motion of the light emitting diode to thermosonically bond the light emitting diode to the submount. Collets for use in bonding shaped substrates to a submount and systems for bonding shaped substrates to a submount are also provided.
摘要翻译：提供具有不规则结构的倒装芯片安装的发光器件的接合。具有成形基板的发光二极管通过向衬底施加力而以基板内的剪切力不超过衬底的故障阈值的方式与基座结合。将发光二极管接合到基座可以通过向发光二极管的基板的表面施加力而提供，所述表面倾斜于发光二极管的运动方向，以将发光二极管热偶接合到基台。还提供了用于将成形基板粘合到基座的套筒和用于将成形基板粘合到基座的系统。

5. 发明授权

US09666772B2 High powered light emitter packages with compact optics 有权
公开(公告)号：US09666772B2
公开(公告)日：2017-05-30
申请号：US10836743
申请日：2004-04-29
申请人： James Ibbetson , Jayesh Bharathan , Bernd Keller
发明人： James Ibbetson , Jayesh Bharathan , Bernd Keller
IPC分类号： H01L33/54 , H01L33/60 , H01L33/64 , H01L33/56 , H01L33/58
CPC分类号： H01L33/54 , H01L33/56 , H01L33/58 , H01L33/60 , H01L33/641 , H01L2224/48091 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： A light emitter includes a planar supporting surface, a light source positioned on the spreader region, and an encapsulant positioned on the spreader region to surround the light source. Except where constrained by adhesion to the planar supporting surface, the encapsulant is capable of expanding and contracting in response to a change in temperature so that forces caused by differences in the coefficient of thermal expansion between the different components is minimized. One or more reflective elements can be positioned proximate to the light source to increase the light emitting efficiency of the light emitter. The reflective elements can include a reflective layer on the spreader region and/or a reflective layer on a portion of the encapsulant.

6. 发明授权

US07608860B2 Light emitting devices suitable for flip-chip bonding 有权
标题翻译：适用于倒装芯片贴装的发光器件
公开(公告)号：US07608860B2
公开(公告)日：2009-10-27
申请号：US11772419
申请日：2007-07-02
申请人： David B. Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter S. Andrews , Gerald H. Negley
发明人： David B. Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter S. Andrews , Gerald H. Negley
IPC分类号： H01L29/267
CPC分类号： H01L33/62 , H01L33/38 , H01L2224/04026 , H01L2224/26175 , H01L2224/291 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.
摘要翻译：通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料，并将其安装在基板上，并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上，发光器件死到底座。选择导电芯片附着材料的预定图案，以便当发光器件裸片安装到底座时，防止导电芯片附着材料接触具有相反导电类型的区域。导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。还提供具有预定图案的导电芯片附着材料的发光器件裸片。在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中级环氧树脂。还提供了具有B级可固化模具环氧树脂的发光器件模具。

7. 发明申请

US20070241360A1 LIGHT EMITTING DEVICES SUITABLE FOR FLIP-CHIP BONDING 有权
标题翻译：适用于片芯接合的发光装置
公开(公告)号：US20070241360A1
公开(公告)日：2007-10-18
申请号：US11772419
申请日：2007-07-02
申请人： David Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter Andrews , Gerald Negley
发明人： David Slater, Jr. , Jayesh Bharathan , John Edmond , Mark Raffetto , Anwar Mohammed , Peter Andrews , Gerald Negley
IPC分类号： H01L33/00
CPC分类号： H01L33/62 , H01L33/38 , H01L2224/04026 , H01L2224/26175 , H01L2224/291 , H01L2224/32245 , H01L2224/48463 , H01L2224/73265 , H01L2924/01057 , H01L2924/01078 , H01L2924/01079 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/014 , H01L2924/00
摘要： Light emitting device die having a mesa configuration on a substrate and an electrode on the mesa are attached to a submount in a flip-chip configuration by forming predefined pattern of conductive die attach material on at least one of the electrode and the submount and mounting the light emitting device die to the submount. The predefined pattern of conductive die attach material is selected so as to prevent the conductive die attach material from contacting regions of having opposite conductivity types when the light emitting device die is mounted to the submount. The predefined pattern of conductive die attach material may provide a volume of die attach material that is less than a volume defined by an area of the electrode and a distance between the electrode and the submount. Light emitting device dies having predefined patterns of conductive die attach material are also provided. Light emitting devices having a gallium nitride based light emitting region on a substrate, such as a silicon carbide substrate, may also be mounted in a flip-chip configuration by mounting an electrode of the gallium nitride based light emitting region to a submount utilizing a B-stage curable die epoxy. Light emitting device dies having a B-stage curable die epoxy are also provided.
摘要翻译：通过在电极和底座中的至少一个上形成预定图案的导电芯片附着材料，并将其安装在基板上，并将底板上的电极和底板上的电极的底板配置在倒装芯片结构的底座上，发光器件死到底座。选择导电芯片附着材料的预定图案，以便当发光器件裸片安装到底座时，防止导电芯片附着材料接触具有相反导电类型的区域。导电芯片附接材料的预定图案可以提供小于由电极区域限定的体积以及电极和底座之间的距离的管芯附着材料的体积。还提供具有预定图案的导电芯片附着材料的发光器件裸片。在碳化硅基板等基板上具有氮化镓系发光区域的发光元件也可以通过将氮化镓系发光区域的电极安装在利用B的基板的倒装芯片配置中级环氧树脂。还提供了具有B级可固化模具环氧树脂的发光器件模具。

8. 发明授权

US07259402B2 High efficiency group III nitride-silicon carbide light emitting diode 有权
标题翻译：高效率III族氮化硅 - 碳化硅发光二极管
公开(公告)号：US07259402B2
公开(公告)日：2007-08-21
申请号：US10951042
申请日：2004-09-22
申请人： John Adam Edmond , Jayesh Bharathan , David Beardsley Slater, Jr.
发明人： John Adam Edmond , Jayesh Bharathan , David Beardsley Slater, Jr.
IPC分类号： H01L31/02
CPC分类号： H01L33/36 , H01L33/007
摘要： A method and resulting structures are disclosed for fabricating a high efficiency high extraction light emitting diode suitable for packaging. The method includes the steps of adding a light emitting active portion of wide-bandgap semiconductor material to a conductive silicon carbide substrate, joining the added active portion to a conductive sub-mounting structure, and removing a portion of the silicon carbide substrate opposite the added active portion to thereby reduce the overall thickness of the joined substrate, active portion and sub-mounting structure. The resulting the sub-mounting structure can be joined to a lead frame with the active portion positioned between the silicon carbide substrate and the sub-mounting structure to thereby use the sub-mounting structure to separate the active portion from the lead frame and avoid undesired electrical contact between the active portion and the lead frame.
摘要翻译：公开了一种制造适用于包装的高效率高抽提发光二极管的方法和结果。该方法包括以下步骤：将宽带隙半导体材料的发光有源部分添加到导电碳化硅基板，将添加的有源部分接合到导电子安装结构，并且将与添加的相邻的碳化硅基板相对的一部分从而减小接合的基板，有源部分和副安装结构的整体厚度。所得到的子安装结构可以连接到引线框架，其中有源部分位于碳化硅基板和子安装结构之间，从而使用子安装结构将有源部分与引线框架分开，并避免不必要的有源部分和引线框架之间的电接触。

9. 发明申请

US20060060874A1 High efficiency group III nitride LED with lenticular surface 有权
标题翻译：高效率III族氮化物LED带透镜表面
公开(公告)号：US20060060874A1
公开(公告)日：2006-03-23
申请号：US11082470
申请日：2005-03-17
申请人： John Edmond , David Slater , Jayesh Bharathan , Matthew Donofrio
发明人： John Edmond , David Slater , Jayesh Bharathan , Matthew Donofrio
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/22 , H01L33/44
摘要： A high efficiency Group III nitride light emitting diode is disclosed. The diode includes a substrate selected from the group consisting of semiconducting and conducting materials, a Group III nitride-based light emitting region on or above the substrate, and, a lenticular surface containing silicon carbide on or above the light emitting region.
摘要翻译：公开了一种高效率III族氮化物发光二极管。二极管包括选自由半导体材料和导电材料组成的组的衬底，以及在衬底上或衬底上的III族氮化物基发光区域，以及在发光区域上或上方含有碳化硅的双凸透镜表面。

10. 发明申请

US20060046328A1 Ultra-thin ohmic contacts for p-type nitride light emitting devices and methods of forming 有权
标题翻译：用于p型氮化物发光器件的超薄欧姆接触和形成方法
公开(公告)号：US20060046328A1
公开(公告)日：2006-03-02
申请号：US11191111
申请日：2005-07-27
申请人： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
发明人： Mark Raffetto , Jayesh Bharathan , Kevin Haberern , Michael Bergmann , David Emerson , James Ibbetson , Ting Li
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , H01L24/32 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/405 , H01L2224/48463 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , H01L2924/3011 , H01L2933/0016 , H01L2924/00
摘要： A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 Å and a specific contact resistivity less than about 10−3 ohm-cm2.
摘要翻译：基于半导体的发光器件（LED）可以在p型氮化物层上包括p型氮化物层和金属欧姆接触。金属欧姆接触可以具有小于约的平均厚度和小于约10 -3欧姆 - 厘米2的特定接触电阻。

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