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1. 发明授权

US07717749B2 Multiport RJ connector 有权
标题翻译：多端RJ连接器
公开(公告)号：US07717749B2
公开(公告)日：2010-05-18
申请号：US10657343
申请日：2003-09-08
申请人： John Chen , Kwok Fai Lai , Kuok Sang Leong , Man Tat Yip , Wai Shun Leung , Chun Wing Ng , Quincy Lee
发明人： John Chen , Kwok Fai Lai , Kuok Sang Leong , Man Tat Yip , Wai Shun Leung , Chun Wing Ng , Quincy Lee
IPC分类号： H01R13/68
CPC分类号： H01R13/6658 , H01R24/64
摘要： A multiport connector which includes a housing having at least two aligned compartments, each compartment being structured and arranged to receive respective plugs. A multilayer printed wiring board separates the two compartments, the printed wiring board having circuit patterns on opposite sides of opposed non-conductive layers and a metal shielding layer intermediate the non-conductive layers. A first plurality of conductive contact fingers is disposed in one of the compartments, the first plurality of fingers having first portions for making electrical contact with one of the plugs and second portions for making contact with the circuit pattern on one of the non-conductive layers of the multilayer printed wiring board. A second plurality of conductive contact fingers is disposed in the other of the compartments, the second plurality of fingers having first portions for making electrical contact with the other one of the plugs and second portions for making contact with the circuit pattern on the other one of the non-conductive layers of the multilayer printed wiring board.
摘要翻译：一种多端口连接器，其包括具有至少两个对准隔室的壳体，每个隔室被构造和布置成接收相应的插头。多层印刷线路板将两个隔室，具有相对的非导电层的相对侧上的电路图案的印刷电路板和在非导电层之间的金属屏蔽层分离。第一多个导电接触指状物设置在其中一个隔室中，第一多个指状物具有用于与塞子中的一个电气接触的第一部分和用于与电路图案在非导电层之一接触的第二部分的多层印刷线路板。第二多个导电接触指状物设置在另一个隔间中，第二多个指状物具有用于与另一个插塞和第二部分电接触的第一部分，用于与另一个上的电路图案接触多层印刷线路板的非导电层。

2. 发明授权

US06342133B2 PVD deposition of titanium and titanium nitride layers in the same chamber without use of a collimator or a shutter 有权
标题翻译：在不使用准直器或快门的情况下，将钛和氮化钛层的PVD沉积在相同的腔室中
公开(公告)号：US06342133B2
公开(公告)日：2002-01-29
申请号：US09524987
申请日：2000-03-14
申请人： Gerard Chris D'Couto , George Tkach , Jeff Dewayne Lyons , Max Biberger , Kwok Fai Lai , Jean Lu , Kaihan Ashtiani
发明人： Gerard Chris D'Couto , George Tkach , Jeff Dewayne Lyons , Max Biberger , Kwok Fai Lai , Jean Lu , Kaihan Ashtiani
IPC分类号： C23C1435
CPC分类号： H01L21/2855 , C23C14/0063 , C23C14/0641 , C23C14/165 , C23C14/35 , H01J37/342 , H01L21/28568
摘要： Ti and TiN layers are formed on an integrated circuit substrate using a titanium target in non-nitrided mode in a hollow cathode magnetron apparatus. Neither a collimator nor a shield is used. Ti and TiN layers are deposited in vias and trenches having aspect ratios up to 5:1.
摘要翻译：在中空阴极磁控管装置中，使用非氮化模式的钛靶在集成电路基板上形成Ti和TiN层。不使用准直仪和屏蔽。 Ti和TiN层沉积在通孔和沟槽中，其纵横比高达5:1。

3. 发明授权

US06541371B1 Apparatus and method for depositing superior Ta(N)/copper thin films for barrier and seed applications in semiconductor processing 有权
标题翻译：用于在半导体处理中沉积用于屏障和种子应用的优良Ta（N）/铜薄膜的装置和方法
公开(公告)号：US06541371B1
公开(公告)日：2003-04-01
申请号：US09491853
申请日：2000-01-26
申请人： Kaihan A. Ashtiani , Maximilian A. Biberger , Erich R. Klawuhn , Kwok Fai Lai , Karl B. Levy , J. Patrick Rymer
发明人： Kaihan A. Ashtiani , Maximilian A. Biberger , Erich R. Klawuhn , Kwok Fai Lai , Karl B. Levy , J. Patrick Rymer
IPC分类号： H01L214763
CPC分类号： H01L21/76843 , H01L21/2855 , H01L21/76873 , H01L21/76876
摘要： A method of depositing thin films comprising tantalum, tantalum nitride, and copper for barrier films and seed layers within high aspect ratio openings used for copper interconnects. The barrier films and seed layers are deposited at extremely low temperature conditions wherein the wafer stage temperature of the sputter source is chilled to about −70° C. to about 0° C. Most preferably, the present invention is practiced using a hollow cathode magnetron. The resulting tantalum and/or tantalum nitride barrier films and copper seed layers are superior in surface smoothness, grain size and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.
摘要翻译：一种用于在用于铜互连的高纵横比开口中沉积用于阻挡膜和种子层的钽，氮化钽和铜的薄膜的方法。阻挡膜和种子层在极低温度条件下沉积，其中溅射源的晶片台温度被冷却至约-70℃至约0℃。最优选地，本发明使用空心阴极磁控管。所得到的钽和/或氮化钽阻挡膜和铜籽晶层的表面平滑度，晶粒尺寸和均匀性都是优异的，使得高纵横比开口的后续填充基本上无空隙。

4. 发明授权

US06217716B1 Apparatus and method for improving target erosion in hollow cathode magnetron sputter source 失效
标题翻译：用于改善中空阴极磁控溅射源目标侵蚀的装置和方法
公开(公告)号：US06217716B1
公开(公告)日：2001-04-17
申请号：US09073358
申请日：1998-05-06
申请人： Kwok Fai Lai
发明人： Kwok Fai Lai
IPC分类号： C23C1434
CPC分类号： H01J37/342 , C23C14/35 , H01J37/3405
摘要： Magnetic field lines within a hollow cathode magnetron sputtering device are modified by various means to improve the full-face erosion profile of the hollow cathode target. These means include, varying the magnetic field of the main magnetic source, extending the magnetic field beyond the opening in the hollow cathode and adding a stationary or mobile magnetic field source adjacent to the closed end surface of the hollow cathode target. The present invention employs various embodiments which when implemented individually or in combination improve the full face erosion of a target cathode in a hollow cathode magnetron sputtering source.
摘要翻译：中空阴极磁控管溅射装置内的磁场线通过各种手段改进，以改善中空阴极靶的全面侵蚀曲线。这些装置包括改变主磁源的磁场，将磁场延伸超过中空阴极中的开口，并且在中空阴极靶的封闭端面附近添加静止或移动的磁场源。本发明采用各种实施例，当单独地或组合地实现时，可以改善空心阴极磁控管溅射源中目标阴极的全面侵蚀。

5. 发明申请

US20080264340A1 MOVING INTERLEAVED SPUTTER CHAMBER SHIELDS 审中-公开
标题翻译：移动交互式飞溅室
公开(公告)号：US20080264340A1
公开(公告)日：2008-10-30
申请号：US12169238
申请日：2008-07-08
申请人： Robert Martinson , Norman Bourdon , Kwok Fai Lai , Dhairya Shrivastava , Paul Shufflebothan
发明人： Robert Martinson , Norman Bourdon , Kwok Fai Lai , Dhairya Shrivastava , Paul Shufflebothan
IPC分类号： C23C16/00
CPC分类号： C23C14/564 , H01J37/32504 , H01J37/34 , H01J2237/026
摘要： A shielding system for a physical vapor deposition chamber having a sputter target above the pedestal. The shielding system comprises a pedestal shield attachable to the pedestal and movable therewith. The pedestal shield surrounds and extends outward from the pedestal toward the chamber side or lower walls. The system also comprises a sidewall shield adapted to extend substantially around and within the chamber sidewalls, and downward from an upper portion thereof. The sidewall shield has a lower end extending inward and disposed adjacent the pedestal shield upper portion when the pedestal is in the raised position. The pedestal shield and sidewall shield cooperate, when the pedestal is in the raised position, to prevent line-of-sight deposition transmission from the sputter target to the side and lower walls of the deposition chamber.
摘要翻译：一种用于物理气相沉积室的屏蔽系统，其具有在基座上方的溅射靶。屏蔽系统包括可附接到基座并与其移动的基座屏蔽。基座护罩围绕并从基座朝向室侧或下壁向外延伸。该系统还包括侧壁屏蔽件，其适于在腔室侧壁内部和内部延伸，并且从其上部向下延伸。侧壁屏蔽件具有向内延伸的下端，并且当基座处于升高位置时邻近基座屏蔽件上部设置。当基座处于升高位置时，基座屏蔽和侧壁屏蔽配合以防止从溅射靶到沉积室的侧壁和下壁的视线沉积传输。

6. 发明授权

US06905959B1 Apparatus and method for depositing superior Ta (N) copper thin films for barrier and seed applications in semiconductor processing 失效
标题翻译：用于在半导体处理中沉积用于屏障和种子应用的优质Ta（N）铜薄膜的装置和方法
公开(公告)号：US06905959B1
公开(公告)日：2005-06-14
申请号：US10335464
申请日：2002-12-31
申请人： Kaihan A. Ashtiani , Maximilian A. Biberger , Erich R. Klawuhn , Kwok Fai Lai , Karl B. Levy , J. Patrick Rymer
发明人： Kaihan A. Ashtiani , Maximilian A. Biberger , Erich R. Klawuhn , Kwok Fai Lai , Karl B. Levy , J. Patrick Rymer
IPC分类号： H01L21/285 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76843 , H01L21/2855 , H01L21/76873 , H01L21/76876
摘要： A method of depositing thin films comprising tantalum, tantalum nitride, and copper for barrier films and seed layers within high aspect ratio openings used for copper interconnects. The barrier films and seed layers are deposited at extremely low temperature conditions wherein the wafer stage temperature of the sputter source is chilled to about −70° C. to about 0° C. Most preferably, the present invention is practiced using a hollow cathode magnetron. The resulting tantalum and/or tantalum nitride barrier films and copper seed layers are superior in surface smoothness, grain size and uniformity such that subsequent filling of the high aspect ratio opening is substantially void-free.
摘要翻译：一种用于在用于铜互连的高纵横比开口中沉积用于阻挡膜和种子层的钽，氮化钽和铜的薄膜的方法。阻挡膜和种子层在极低温度条件下沉积，其中溅射源的晶片台温度被冷却至约-70℃至约0℃。最优选地，本发明使用空心阴极磁控管。所得到的钽和/或氮化钽阻挡膜和铜籽晶层的表面平滑度，晶粒尺寸和均匀性都是优异的，使得高纵横比开口的后续填充基本上无空隙。

7. 发明授权

US06193854B1 Apparatus and method for controlling erosion profile in hollow cathode magnetron sputter source 有权
标题翻译：用于控制中空阴极磁控溅射源中的侵蚀曲线的装置和方法
公开(公告)号：US06193854B1
公开(公告)日：2001-02-27
申请号：US09375667
申请日：1999-08-16
申请人： Kwok Fai Lai , Larry Dowd Hartsough , Andrew L. Nordquist , Kaihan Abidi Ashtiani , Karl B. Levy , Maximilian A. Biberger
发明人： Kwok Fai Lai , Larry Dowd Hartsough , Andrew L. Nordquist , Kaihan Abidi Ashtiani , Karl B. Levy , Maximilian A. Biberger
IPC分类号： C23C1435
CPC分类号： H01J37/342 , C23C14/35 , H01J37/3405
摘要： A hollow cathode magnetron (HCM) sputter source includes a main magnet positioned near the sidewall of the hollow cathode target and a pair of rotating magnet arrays that are positioned near the closed end of the hollow cathode target. One of the arrays produces a magnetic field that is aligned with (aids) the magnetic field produced by the main magnet; the other arrays produce a magnetic field that is aligned against (bucks) the magnetic field produced by the main magnet. Field lines produced by the magnet arrays contain an extension of the plasma that is controlled by the main magnet. Charged particles circulate between the two portions of the plasma. The extended plasma is thus formed over a very high percentage of the surface of the target, thereby creating an erosion profile that is highly uniform and encompasses essentially the entire face of the target. This maximizes the utilization of the target and minimizes the frequency at which the spent target must be replaced.
摘要翻译：中空阴极磁控管（HCM）溅射源包括位于中空阴极靶的侧壁附近的主磁体和位于中空阴极靶的封闭端附近的一对旋转磁体阵列。其中一个阵列产生与由主磁体产生的磁场（辅助）对准的磁场; 其他阵列产生与主磁体产生的磁场对准（降压）的磁场。由磁体阵列产生的场线包含由主磁体控制的等离子体的延伸。带电粒子在等离子体的两部分之间循环。延长的等离子体因此形成在目标表面的非常高百分比上，从而产生高度均匀并且基本上涵盖靶的整个面的侵蚀曲线。这最大限度地提高了目标的利用率，并最大限度地减少了必须更换用完的目标的频率。

8. 发明授权

US6149050A Method for attaching solderable wire leads to a lead frame 有权
标题翻译：将可焊接导线连接到引线框架的方法
公开(公告)号：US6149050A
公开(公告)日：2000-11-21
申请号：US238229
申请日：1999-01-27
申请人： Kwok Fai Lai , Siu-wai Wan , Siu-keung Tse , Jack Xiong Zhenpeng
发明人： Kwok Fai Lai , Siu-wai Wan , Siu-keung Tse , Jack Xiong Zhenpeng
IPC分类号： B23K1/08 , H01R4/02 , H05K3/02 , H05K3/34 , H05K3/40 , B23K31/02 , B23K31/00 , B23K1/00 , B23K5/00
CPC分类号： B23K1/08 , H05K3/3405 , B23K2201/40 , H05K2201/09181 , H05K2201/1003 , H05K2201/1034 , H05K2201/10924 , H05K3/3468 , H05K3/403
摘要： A method and apparatus for soldering wires of components on PC boards to a lead frame. Wires from the electronic components on a PC board supported by a fixture are led through respective pathways and particularly plated grooves on each side of the PC board. The wires within the pathways are held there by being adhered to a temporary fixture beneath the board until the wires are later affixed in their grooves by dipping the sides of the PC board in a solder pool. The excess wire tails are cut away. The PC board is then mounted on a lead frame, and the leads of the lead frame are aligned with respective pathways of the PC board. The PC board and lead frame are then dipped in solder which electrically connects the wires in their respective pathways to the leads of the lead frame.
摘要翻译：一种用于将PC板上的部件的焊丝焊接到引线框架的方法和装置。由固定装置支撑的PC板上的电子部件的导线通过各个通路引导，特别是在PC板的每一侧的电镀槽。路径内的电线通过粘附在板下方的临时固定件而保持在该位置，直到电线稍后通过将PC板的侧面浸入焊池中而固定在其沟槽中。多余的线尾被切掉。然后将PC板安装在引线框架上，引线框架的引线与PC板的相应路径对齐。然后将PC板和引线框架浸入焊料中，焊料将其各自通路中的导线电连接到引线框架的引线。

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