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    • 3. 发明授权
    • Method for contactless testing of conducting paths in a substrate using
photo-assisted tunneling
    • 使用光辅助隧道对基板中的导电路径进行非接触测试的方法
    • US4868492A
    • 1989-09-19
    • US107441
    • 1987-10-09
    • Johannes G. BehaArmin U. BlachaRolf ClaubergHugo K. Seitz
    • Johannes G. BehaArmin U. BlachaRolf ClaubergHugo K. Seitz
    • H01L21/66G01N23/225G01R31/02G01R31/308H05K3/00
    • G01R31/308
    • For testing the integrity of conducting lines on or in a substrate, the following steps are executed: (I) Selected pads are irradiated by a focused optical beam so that they are positively charged due to photon-assisted tunneling of electrons from those pads. The charges propagate through existing conductors so that all selected pads and all pads connected to them assume a specific voltage. (II) The whole surface is irradiated by a flooding optical beam. Photon-assisted tunneling of electrons will now occur from those pads which were not charged previously. (III) The tunneling electrons excite an electroluminescent layer whose illumination reveals the spatial distribution of uncharged pads. This method is performed in air under atmospheric conditions and allows completely contactless testing of circuitry to detect line interruptions as well as shortcuts between separate lines. It is suited for surface lines, buried lines and for via connections.
    • 为了测试衬底上或衬底中的导线的完整性,执行以下步骤:(I)由聚焦光束照射所选择的焊盘,使得它们由于来自这些焊盘的电子的光子辅助隧穿而带正电荷。 电荷通过现有导体传播,使得所有选定的焊盘和连接到它们的所有焊盘都具有特定的电压。 (II)整个表面被淹没光束照射。 电子的光子辅助隧道现在将从以前没有充电的那些焊盘发生。 (III)隧道电子激发电致发光层,其照明显示不带电垫的空间分布。 该方法在大气条件下在空气中进行,并允许电路完全非接触测试,以检测线路中断以及分离线路之间的快捷方式。 适用于表面线,埋线和通孔连接。
    • 5. 发明授权
    • Photon assisted tunneling testing of passivated integrated circuits
    • 钝化集成电路的光子辅助隧道测试
    • US4786864A
    • 1988-11-22
    • US932128
    • 1986-11-18
    • Johannes G. BehaRussell W. DreyfusAllan M. HartsteinGary W. Rubloff
    • Johannes G. BehaRussell W. DreyfusAllan M. HartsteinGary W. Rubloff
    • G01R31/308H01L21/66G01R31/02
    • G01R31/308H01L22/14H01L2924/0002
    • Covering metal test pads of a passivated integrated circuit process intermediate wafer or completed integrated circuit chip-to-test, with a thin conductive overlayer, and then accessing the test pads through the passivation layer and conductive overlayer, by a pulsed laser to provide voltage-modulated photon-assisted tunneling through the insulation layer, to the conductive overlayer as an electron current, and detecting the resulting electron current, provides a nondestructive test of integrated circuits. The passivation, normally present to protect the integrated circuit, also lowers the threshold for photoelectron emission. The conductive overlayer acts as a photoelectron collector for the detector. A chip-to-test which is properly designed for photon assisted tunneling testing has test sites accessible to laser photons even though passivated. Such a chip-to-test may be nondestructively tested in air at one or several stages of its processing, without the sacrifices of mechanical probing or of bringing test sites out to output pads. The conductive overlayer may be removed after tests have been completed. Integrated circuit process intermediate chips may be specially designed for testability, with test sites grouped for easy access through windows left uncovered by subsequent layers.
    • 覆盖钝化集成电路工艺中间晶片或完成的集成电路芯片到测试的金属测试焊盘,具有薄的导电覆盖层,然后通过脉冲激光器通过钝化层和导电覆盖层访问测试焊盘, 通过绝缘层调制的光子辅助隧穿,作为电子电流的导电覆层,并检测所得的电子电流,为集成电路提供非破坏性测试。 通常存在的用于保护集成电路的钝化也降低了光电子发射的阈值。 导电覆盖层用作检测器的光电收集器。 适用于光子辅助隧道测试的芯片对测试即使钝化,激光光子也可以使用测试点。 这样的芯片到测试可以在其处理的一个或几个阶段的空气中进行非破坏性测试,而不会牺牲机械探测或将测试点带到输出焊盘。 测试完成后,导电覆层可以被去除。 集成电路过程中间芯片可以特别设计用于可测试性,测试站点分组,以便通过后续层未被覆盖的窗口轻松访问。
    • 6. 发明授权
    • Noncontact full-line dynamic AC tester for integrated circuits
    • 用于集成电路的非接触式全线动态AC测试仪
    • US4670710A
    • 1987-06-02
    • US717407
    • 1985-03-29
    • Johannes G. BehaRussell W. DreyfusGary W. Rubloff
    • Johannes G. BehaRussell W. DreyfusGary W. Rubloff
    • G01R31/26G01Q30/02G01Q30/16G01Q30/20G01R31/308H01L21/66G01R15/12G01N23/22G01R13/02
    • G01R31/308
    • Simultaneous noncontact testing of voltages across a full line of test sites on an integrated circuit chip-to-test is achieved with high time resolution using photoelectron emission induced by a pulsed laser focussed to a line on the chip-to-test, together with high speed electrostatic deflection perpendicular to the line focus. Photoelectrons produced by the line focus of pulsed laser light are imaged to a line on an array detector, the measured photoelectron intensities at array points along this line representing voltages at corresponding points along the line illuminated by the laser focus. High speed electrostatic deflection applied during the laser pulse, perpendicular to the direction of the line focus, disperses the line image (column) on the array detector across a sequence of sites at right angles (rows), thereby revealing the time-dependence of voltages in the column of test sites with high time resolution (in the picosecond range).
    • 在集成电路芯片到测试的整个测试点上的电压的同时非接触测试是通过使用聚焦于芯片上测试线上的脉冲激光引起的光电子发射的高时间分辨率,以及高 垂直于线对焦的高速静电偏转。 通过脉冲激光的线焦点产生的光电子被成像到阵列检测器上的线上,沿着该线的阵列点处测量的光电子强度表示沿着由激光焦点照射的线的对应点处的电压。 在激光脉冲期间施加的垂直于线焦点的方向的高速静电偏转将直线(行)上的线阵图像(列)分散在阵列检测器上,从而显示电压的时间依赖性 在具有高时间分辨率(在皮秒范围内)的测试点列。
    • 8. 发明授权
    • Full chip integrated circuit tester
    • 全芯片集成电路测试仪
    • US4703260A
    • 1987-10-27
    • US778823
    • 1985-09-23
    • Johannes G. BehaRussell W. DreyfusJeffrey A. KashGary W. Rubloff
    • Johannes G. BehaRussell W. DreyfusJeffrey A. KashGary W. Rubloff
    • H01L21/66G01R31/26G01R31/265G01R31/302G01R31/308G01R31/28
    • G01R31/308G01R31/2656
    • Contactless probing of an integrating circuit is carried out by flooding the surface of the integrated circuit with pulsed ultraviolet laser light, causing photoelectron emission as a function of the potentials at micropoints on the integrated circuit, converting this two-dimensional electron pattern into a corresponding relatively long duration pattern of luminescence by a luminescent target, and reviewing the result by video/computer scanning. Separate embodiments allow testing either in vacuum or in air, with or without insulating passivation layers present on the chip. The result is a contactless oscilloscope which monitors instantaneous voltage (logic states and AC switching waveforms) for a full two-dimensional array of micropoints simultaneously. A chip with test points and appropriate windows for laser activation and luminescent targeting can be specially designed for optimal testing.
    • 集成电路的非接触探测是通过用脉冲紫外激光泛光集成电路的表面来实现的,导致光电子发射作为集成电路上的微点处的电势的函数,将该二维电子图案转换成相应的相对 通过发光目标发光的长持续时间模式,并通过视频/计算机扫描来检查结果。 单独的实施例允许在真空或空气中测试,存在或不存在芯片上存在的绝缘钝化层。 结果是一个非接触式示波器,它同时监视完整二维点阵列的瞬时电压(逻辑状态和交流开关波形)。 具有测试点的芯片和用于激光激活和发光瞄准的适当窗口可以专门设计用于最佳测试。
    • 9. 发明授权
    • Full chip integrated circuit tester
    • 全芯片集成电路测试仪
    • US4845425A
    • 1989-07-04
    • US84643
    • 1987-08-11
    • Johannes G. BehaRussell W. DreyfusJeffrey A. KashGary W. Rubloff
    • Johannes G. BehaRussell W. DreyfusJeffrey A. KashGary W. Rubloff
    • G01R31/265G01R31/308
    • G01R31/308G01R31/2656
    • Contactless probing of an integrated circuit is carried out by flooding the surface of the integrated circuit with pulsed ultraviolet laser light, causing photoelectron emission as a function of the potentials at micropoints on the integrated circuit, converting this two-dimensional electron pattern into a corresponding relatively long duration pattern of luminescence by a luminescent target, and reviewing the result by video/computer scanning. Separate embodiments allow testing either in vacuum or in air, with or without insulating passivation layers present on the chip. The result is a contactless oscilloscope which monitors instantaneous voltages (logic states and AC switching waveforms) for a full two-demsnsional array of micropoints simultaneously. A chip with test points and appropriate windows for laser activation and luminescent targeting can be specially designed for optimal testing.
    • 集成电路的非接触式探测是通过用脉冲紫外激光淹没集成电路的表面来实现的,从而使光电子发射作为集成电路上的微点处的电位的函数,将该二维电子图案转换成相应的相对 通过发光目标发光的长持续时间模式,并通过视频/计算机扫描来检查结果。 单独的实施例允许在真空或空气中测试,存在或不存在芯片上存在的绝缘钝化层。 结果是一个非接触式示波器,它同时监视一个完整的两点阵列的瞬时电压(逻辑状态和交流开关波形)。 具有测试点的芯片和用于激光激活和发光瞄准的适当窗口可以专门设计用于最佳测试。
    • 10. 发明授权
    • Noncontact dynamic tester for integrated circuits
    • 集成电路非接触动态测试仪
    • US4706018A
    • 1987-11-10
    • US667506
    • 1984-11-01
    • Johannes G. BehaRussell W. DreyfusGary W. Rubloff
    • Johannes G. BehaRussell W. DreyfusGary W. Rubloff
    • G01R31/302G01R31/308H01L21/66G01R31/02G01R19/00
    • G01R31/308
    • Testing of integrated circuit process intermediates, such as wafers, dise or chips in various stages of production (test chips) is facilitated by a nonintrusive, noncontact dynamic testing technique, using a pulsed laser, with laser light modification to increase photon energy through conversion to shorter wavelength. The high energy laser light excites electron emissions to pass to the detection system as a composite function of applied light energy and of dynamic operation of the circuit; detecting those emissions by an adjacent detector requires no ohmic contacts or special circuitry on the integrated circuit chip or wafer. Photoelectron energy emitted from a test pad on the test chip is detected as a composite function of the instantaneous input voltage as processed on the test chip, in dynamic operation including improper operation due to fault. The pulse from the laser, as modified through light modification, the parameters of detection of bias voltages, and the distances involved in chip-grid-detector juxtaposition, provides emissions for detection of circuit voltages occurring on the test chip under dynamic conditions simulating actual or stressed operation, with high time resolution of the voltages and their changes on the circuit.
    • 通过使用脉冲激光器的非侵入式非接触式动态测试技术,通过激光修改来促进集成电路过程中间体(例如晶片,不育或芯片)在各个生产阶段(测试芯片)的测试,以通过转换为 波长较短。 高能激光激发电子发射作为应用光能和电路的动态运行的复合功能传递到检测系统; 通过相邻检测器检测这些发射不需要集成电路芯片或晶片上的欧姆接触或特殊电路。 在测试芯片上从测试垫发射的光电子能量被检测为在测试芯片上处理的瞬时输入电压的复合函数,在动态操作中包括由于故障而导致的不正确的操作。 通过光修改修改的激光脉冲,偏置电压的检测参数以及芯片 - 电网检测器并置所涉及的距离提供了在动态条件下检测在测试芯片上产生的电路电压的发射,模拟实际或 强调操作,具有高电压时间分辨率及其在电路上的变化。