会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Photon assisted tunneling testing of passivated integrated circuits
    • 钝化集成电路的光子辅助隧道测试
    • US4786864A
    • 1988-11-22
    • US932128
    • 1986-11-18
    • Johannes G. BehaRussell W. DreyfusAllan M. HartsteinGary W. Rubloff
    • Johannes G. BehaRussell W. DreyfusAllan M. HartsteinGary W. Rubloff
    • G01R31/308H01L21/66G01R31/02
    • G01R31/308H01L22/14H01L2924/0002
    • Covering metal test pads of a passivated integrated circuit process intermediate wafer or completed integrated circuit chip-to-test, with a thin conductive overlayer, and then accessing the test pads through the passivation layer and conductive overlayer, by a pulsed laser to provide voltage-modulated photon-assisted tunneling through the insulation layer, to the conductive overlayer as an electron current, and detecting the resulting electron current, provides a nondestructive test of integrated circuits. The passivation, normally present to protect the integrated circuit, also lowers the threshold for photoelectron emission. The conductive overlayer acts as a photoelectron collector for the detector. A chip-to-test which is properly designed for photon assisted tunneling testing has test sites accessible to laser photons even though passivated. Such a chip-to-test may be nondestructively tested in air at one or several stages of its processing, without the sacrifices of mechanical probing or of bringing test sites out to output pads. The conductive overlayer may be removed after tests have been completed. Integrated circuit process intermediate chips may be specially designed for testability, with test sites grouped for easy access through windows left uncovered by subsequent layers.
    • 覆盖钝化集成电路工艺中间晶片或完成的集成电路芯片到测试的金属测试焊盘,具有薄的导电覆盖层,然后通过脉冲激光器通过钝化层和导电覆盖层访问测试焊盘, 通过绝缘层调制的光子辅助隧穿,作为电子电流的导电覆层,并检测所得的电子电流,为集成电路提供非破坏性测试。 通常存在的用于保护集成电路的钝化也降低了光电子发射的阈值。 导电覆盖层用作检测器的光电收集器。 适用于光子辅助隧道测试的芯片对测试即使钝化,激光光子也可以使用测试点。 这样的芯片到测试可以在其处理的一个或几个阶段的空气中进行非破坏性测试,而不会牺牲机械探测或将测试点带到输出焊盘。 测试完成后,导电覆层可以被去除。 集成电路过程中间芯片可以特别设计用于可测试性,测试站点分组,以便通过后续层未被覆盖的窗口轻松访问。
    • 5. 发明授权
    • Voltage controlled resonant transmission semiconductor device
    • 压控谐振传输半导体器件
    • US4672423A
    • 1987-06-09
    • US801497
    • 1985-11-22
    • Alan B. FowlerAllan M. Hartstein
    • Alan B. FowlerAllan M. Hartstein
    • H01L29/66H01L29/78
    • B82Y10/00H01L29/66977
    • In a transistor structure a buried gate positioned in the layer above a conduction channel and below a broad gate which overlaps the source and drain, when the voltages applied to the buried gate and the overlapping gate are varied independently, a potential well between two barriers can be established which permits conduction by the physical mechanism of resonant transmission. The potential well between two barriers required for the resonant transmission mechanism is achieved in one structure by a buried gate under an overlapping gate with both width and separation dimension control and in a second structure using split-buried gate under an overlapping gate that is embossed in the region of the split gate. With gate and separation dimensions of the order of 1000 .ANG. switching speeds of the order of 10.sup.-12 seconds are achieved.
    • 在晶体管结构中,当施加到掩埋栅极和重叠栅极的电压独立地变化时,位于导电沟道上方并且在与栅极和漏极重叠的宽栅极之下的层中的掩埋栅极,两个势垒之间的势阱可以 可以通过谐振传输的物理机制进行导通。 谐振传输机构所需的两个障碍之间的潜在井在一个结构中通过在具有宽度和间隔尺寸控制的重叠栅极下的掩埋栅极实现,并且在第二结构中使用在重叠栅极下方的分裂掩埋栅极被压印 分裂门的区域。 具有门极和分离尺寸为1000安培开关速度的量级为10-12秒。