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1. 发明授权

US4786864A Photon assisted tunneling testing of passivated integrated circuits 失效
标题翻译：钝化集成电路的光子辅助隧道测试
公开(公告)号：US4786864A
公开(公告)日：1988-11-22
申请号：US932128
申请日：1986-11-18
申请人： Johannes G. Beha , Russell W. Dreyfus , Allan M. Hartstein , Gary W. Rubloff
发明人： Johannes G. Beha , Russell W. Dreyfus , Allan M. Hartstein , Gary W. Rubloff
IPC分类号： G01R31/308 , H01L21/66 , G01R31/02
CPC分类号： G01R31/308 , H01L22/14 , H01L2924/0002
摘要： Covering metal test pads of a passivated integrated circuit process intermediate wafer or completed integrated circuit chip-to-test, with a thin conductive overlayer, and then accessing the test pads through the passivation layer and conductive overlayer, by a pulsed laser to provide voltage-modulated photon-assisted tunneling through the insulation layer, to the conductive overlayer as an electron current, and detecting the resulting electron current, provides a nondestructive test of integrated circuits. The passivation, normally present to protect the integrated circuit, also lowers the threshold for photoelectron emission. The conductive overlayer acts as a photoelectron collector for the detector. A chip-to-test which is properly designed for photon assisted tunneling testing has test sites accessible to laser photons even though passivated. Such a chip-to-test may be nondestructively tested in air at one or several stages of its processing, without the sacrifices of mechanical probing or of bringing test sites out to output pads. The conductive overlayer may be removed after tests have been completed. Integrated circuit process intermediate chips may be specially designed for testability, with test sites grouped for easy access through windows left uncovered by subsequent layers.
摘要翻译：覆盖钝化集成电路工艺中间晶片或完成的集成电路芯片到测试的金属测试焊盘，具有薄的导电覆盖层，然后通过脉冲激光器通过钝化层和导电覆盖层访问测试焊盘，通过绝缘层调制的光子辅助隧穿，作为电子电流的导电覆层，并检测所得的电子电流，为集成电路提供非破坏性测试。通常存在的用于保护集成电路的钝化也降低了光电子发射的阈值。导电覆盖层用作检测器的光电收集器。适用于光子辅助隧道测试的芯片对测试即使钝化，激光光子也可以使用测试点。这样的芯片到测试可以在其处理的一个或几个阶段的空气中进行非破坏性测试，而不会牺牲机械探测或将测试点带到输出焊盘。测试完成后，导电覆层可以被去除。集成电路过程中间芯片可以特别设计用于可测试性，测试站点分组，以便通过后续层未被覆盖的窗口轻松访问。

2. 发明授权

US4644264A Photon assisted tunneling testing of passivated integrated circuits 失效
公开(公告)号：US4644264A
公开(公告)日：1987-02-17
申请号：US717409
申请日：1985-03-29
申请人： Johannes G. Beha , Russell W. Dreyfus , Allan M. Hartstein , Gary W. Rubloff
发明人： Johannes G. Beha , Russell W. Dreyfus , Allan M. Hartstein , Gary W. Rubloff
IPC分类号： G01R31/28 , G01R31/308 , H01L21/66 , G01R15/12 , G01R31/22 , G01R31/26
CPC分类号： G01R31/308 , H01L22/14 , H01L2924/0002
摘要： Covering metal test pads of a passivated integrated circuit process intermediate wafer or completed integrated circuit chip-to-test, with a thin conductive overlayer, and then accessing the test pads through the passivation layer and conductive overlayer, by a pulsed laser to provide voltage-modulated photon-assisted tunneling through the insulation layer, to the conductive overlayer as an electron current, and detecting the resulting electron current, provides a nondestructive test of integrated circuits. The passivation, normally present to protect the integrated circuit, also lowers the threshold for photoelectron emission. The conductive overlayer acts as a photoelectron collector for the detector. A chip-to-test which is properly designed for photon assisted tunneling testing has test sites accessible to laser photons even though passivated. Such a chip-to-test may be nondestructively tested in air at one or several stages of its processing, without the sacrifices of mechanical probing or of bringing test sites out to output pads. The conductive overlayer may be removed after tests have been completed. Integrated circuit process intermediate chips may be specially designed for testability, with test sites grouped for easy access through windows left uncovered by subsequent layers.

3. 发明授权

US4703260A Full chip integrated circuit tester 失效
标题翻译：全芯片集成电路测试仪
公开(公告)号：US4703260A
公开(公告)日：1987-10-27
申请号：US778823
申请日：1985-09-23
申请人： Johannes G. Beha , Russell W. Dreyfus , Jeffrey A. Kash , Gary W. Rubloff
发明人： Johannes G. Beha , Russell W. Dreyfus , Jeffrey A. Kash , Gary W. Rubloff
IPC分类号： H01L21/66 , G01R31/26 , G01R31/265 , G01R31/302 , G01R31/308 , G01R31/28
CPC分类号： G01R31/308 , G01R31/2656
摘要： Contactless probing of an integrating circuit is carried out by flooding the surface of the integrated circuit with pulsed ultraviolet laser light, causing photoelectron emission as a function of the potentials at micropoints on the integrated circuit, converting this two-dimensional electron pattern into a corresponding relatively long duration pattern of luminescence by a luminescent target, and reviewing the result by video/computer scanning. Separate embodiments allow testing either in vacuum or in air, with or without insulating passivation layers present on the chip. The result is a contactless oscilloscope which monitors instantaneous voltage (logic states and AC switching waveforms) for a full two-dimensional array of micropoints simultaneously. A chip with test points and appropriate windows for laser activation and luminescent targeting can be specially designed for optimal testing.
摘要翻译：集成电路的非接触探测是通过用脉冲紫外激光泛光集成电路的表面来实现的，导致光电子发射作为集成电路上的微点处的电势的函数，将该二维电子图案转换成相应的相对通过发光目标发光的长持续时间模式，并通过视频/计算机扫描来检查结果。单独的实施例允许在真空或空气中测试，存在或不存在芯片上存在的绝缘钝化层。结果是一个非接触式示波器，它同时监视完整二维点阵列的瞬时电压（逻辑状态和交流开关波形）。具有测试点的芯片和用于激光激活和发光瞄准的适当窗口可以专门设计用于最佳测试。

4. 发明授权

US4670710A Noncontact full-line dynamic AC tester for integrated circuits 失效
标题翻译：用于集成电路的非接触式全线动态AC测试仪
公开(公告)号：US4670710A
公开(公告)日：1987-06-02
申请号：US717407
申请日：1985-03-29
申请人： Johannes G. Beha , Russell W. Dreyfus , Gary W. Rubloff
发明人： Johannes G. Beha , Russell W. Dreyfus , Gary W. Rubloff
IPC分类号： G01R31/26 , G01Q30/02 , G01Q30/16 , G01Q30/20 , G01R31/308 , H01L21/66 , G01R15/12 , G01N23/22 , G01R13/02
CPC分类号： G01R31/308
摘要： Simultaneous noncontact testing of voltages across a full line of test sites on an integrated circuit chip-to-test is achieved with high time resolution using photoelectron emission induced by a pulsed laser focussed to a line on the chip-to-test, together with high speed electrostatic deflection perpendicular to the line focus. Photoelectrons produced by the line focus of pulsed laser light are imaged to a line on an array detector, the measured photoelectron intensities at array points along this line representing voltages at corresponding points along the line illuminated by the laser focus. High speed electrostatic deflection applied during the laser pulse, perpendicular to the direction of the line focus, disperses the line image (column) on the array detector across a sequence of sites at right angles (rows), thereby revealing the time-dependence of voltages in the column of test sites with high time resolution (in the picosecond range).
摘要翻译：在集成电路芯片到测试的整个测试点上的电压的同时非接触测试是通过使用聚焦于芯片上测试线上的脉冲激光引起的光电子发射的高时间分辨率，以及高垂直于线对焦的高速静电偏转。通过脉冲激光的线焦点产生的光电子被成像到阵列检测器上的线上，沿着该线的阵列点处测量的光电子强度表示沿着由激光焦点照射的线的对应点处的电压。在激光脉冲期间施加的垂直于线焦点的方向的高速静电偏转将直线（行）上的线阵图像（列）分散在阵列检测器上，从而显示电压的时间依赖性在具有高时间分辨率（在皮秒范围内）的测试点列。

5. 发明授权

US4845425A Full chip integrated circuit tester 失效
标题翻译：全芯片集成电路测试仪
公开(公告)号：US4845425A
公开(公告)日：1989-07-04
申请号：US84643
申请日：1987-08-11
申请人： Johannes G. Beha , Russell W. Dreyfus , Jeffrey A. Kash , Gary W. Rubloff
发明人： Johannes G. Beha , Russell W. Dreyfus , Jeffrey A. Kash , Gary W. Rubloff
IPC分类号： G01R31/265 , G01R31/308
CPC分类号： G01R31/308 , G01R31/2656
摘要： Contactless probing of an integrated circuit is carried out by flooding the surface of the integrated circuit with pulsed ultraviolet laser light, causing photoelectron emission as a function of the potentials at micropoints on the integrated circuit, converting this two-dimensional electron pattern into a corresponding relatively long duration pattern of luminescence by a luminescent target, and reviewing the result by video/computer scanning. Separate embodiments allow testing either in vacuum or in air, with or without insulating passivation layers present on the chip. The result is a contactless oscilloscope which monitors instantaneous voltages (logic states and AC switching waveforms) for a full two-demsnsional array of micropoints simultaneously. A chip with test points and appropriate windows for laser activation and luminescent targeting can be specially designed for optimal testing.
摘要翻译：集成电路的非接触式探测是通过用脉冲紫外激光淹没集成电路的表面来实现的，从而使光电子发射作为集成电路上的微点处的电位的函数，将该二维电子图案转换成相应的相对通过发光目标发光的长持续时间模式，并通过视频/计算机扫描来检查结果。单独的实施例允许在真空或空气中测试，存在或不存在芯片上存在的绝缘钝化层。结果是一个非接触式示波器，它同时监视一个完整的两点阵列的瞬时电压（逻辑状态和交流开关波形）。具有测试点的芯片和用于激光激活和发光瞄准的适当窗口可以专门设计用于最佳测试。

6. 发明授权

US4706018A Noncontact dynamic tester for integrated circuits 失效
标题翻译：集成电路非接触动态测试仪
公开(公告)号：US4706018A
公开(公告)日：1987-11-10
申请号：US667506
申请日：1984-11-01
申请人： Johannes G. Beha , Russell W. Dreyfus , Gary W. Rubloff
发明人： Johannes G. Beha , Russell W. Dreyfus , Gary W. Rubloff
IPC分类号： G01R31/302 , G01R31/308 , H01L21/66 , G01R31/02 , G01R19/00
CPC分类号： G01R31/308
摘要： Testing of integrated circuit process intermediates, such as wafers, dise or chips in various stages of production (test chips) is facilitated by a nonintrusive, noncontact dynamic testing technique, using a pulsed laser, with laser light modification to increase photon energy through conversion to shorter wavelength. The high energy laser light excites electron emissions to pass to the detection system as a composite function of applied light energy and of dynamic operation of the circuit; detecting those emissions by an adjacent detector requires no ohmic contacts or special circuitry on the integrated circuit chip or wafer. Photoelectron energy emitted from a test pad on the test chip is detected as a composite function of the instantaneous input voltage as processed on the test chip, in dynamic operation including improper operation due to fault. The pulse from the laser, as modified through light modification, the parameters of detection of bias voltages, and the distances involved in chip-grid-detector juxtaposition, provides emissions for detection of circuit voltages occurring on the test chip under dynamic conditions simulating actual or stressed operation, with high time resolution of the voltages and their changes on the circuit.
摘要翻译：通过使用脉冲激光器的非侵入式非接触式动态测试技术，通过激光修改来促进集成电路过程中间体（例如晶片，不育或芯片）在各个生产阶段（测试芯片）的测试，以通过转换为波长较短。高能激光激发电子发射作为应用光能和电路的动态运行的复合功能传递到检测系统; 通过相邻检测器检测这些发射不需要集成电路芯片或晶片上的欧姆接触或特殊电路。在测试芯片上从测试垫发射的光电子能量被检测为在测试芯片上处理的瞬时输入电压的复合函数，在动态操作中包括由于故障而导致的不正确的操作。通过光修改修改的激光脉冲，偏置电压的检测参数以及芯片 - 电网检测器并置所涉及的距离提供了在动态条件下检测在测试芯片上产生的电路电压的发射，模拟实际或强调操作，具有高电压时间分辨率及其在电路上的变化。

7. 发明授权

US4269067A Method and apparatus for focusing elastic waves converted from thermal energy 失效
标题翻译：用于聚焦从热能转换的弹性波的方法和装置
公开(公告)号：US4269067A
公开(公告)日：1981-05-26
申请号：US40340
申请日：1979-05-18
申请人： Eugene E. Tynan , Russell W. Dreyfus , Robert J. von Gutfeld
发明人： Eugene E. Tynan , Russell W. Dreyfus , Robert J. von Gutfeld
IPC分类号： A61B8/00 , B06B1/18 , G10K11/30 , G10K11/32 , G10K15/04 , G01N29/00
CPC分类号： G10K15/046 , G10K11/32 , G01N2291/02827
摘要： Pulsed light is applied through a plano concave lens to a thin metal film, which is evaporated on the concave side of the lens. The lens, which is formed of a high thermally insulating material such as glass, for example, and the film are disposed within a liquid such as water, for example. The pulsed light is absorbed by the metal film, which converts the thermal energy produced by the pulsed light into elastic waves in the form of acoustic waves and simultaneously focuses the acoustic waves on an object within the water at a selected focal plane. The metal film is as thin as possible, consistent with complete absorption of the light energy by the metal film, so as to utilize the high thermal expansion coefficient of the water.
摘要翻译：脉冲光通过平凹透镜施加到在透镜的凹面上蒸发的薄金属膜。例如，由诸如玻璃的高绝热材料形成的透镜和膜设置在诸如水的液体内。脉冲光被金属膜吸收，其将由脉冲光产生的热能转换成声波形式的弹性波，同时将声波聚焦在选定焦平面内的水中的物体上。金属膜尽可能薄，与金属膜完全吸收光能一致，以利用水的高热膨胀系数。

8. 发明授权

US4352117A Electron source 失效
标题翻译：电子源
公开(公告)号：US4352117A
公开(公告)日：1982-09-28
申请号：US155729
申请日：1980-06-02
申请人： Jerome J. Cuomo , Russell W. Dreyfus , Jerry M. Woodall
发明人： Jerome J. Cuomo , Russell W. Dreyfus , Jerry M. Woodall
IPC分类号： H01J1/30 , H01J1/308 , H01J1/34 , H01L27/14
CPC分类号： H01J1/308
摘要： A high brightness, essentially monoenergetic electron source is constructed in solid state material by providing a semiconductor body with an electron confinement barrier over most of the surface, the barrier having a relatively small opening exposing the semiconductor body, in the relatively small opening a material is placed in contact with the semiconductor body that has a work function that is lower than the energy of excited electrons in the semiconductor. In this structure electrons from hole-electron pairs generated in the semiconductor are repelled and recombination is inhibited by the barrier except in the relatively small opening where they are injected into the surrounding environment through the lower work function material. The hole-electron pair generation may be by irradiation or by electrical injection. The electron source is useful for such applications as high brightness sources, digital communications, cathode ray tube electron sources and scanning electron microscopes.
摘要翻译：通过在绝大多数表面上提供具有电子约束势垒的半导体器件，在固态材料中构造高亮度，基本上单能量的电子源，该阻挡层具有暴露半导体本体的相对较小的开口，与具有比半导体中激发的电子的能量低的功函数的半导体本体接触。在这种结构中，在半导体中产生的空穴 - 电子对的电子被排斥，复合被屏障抑制，除了在相对小的开口中，它们通过较低的功函数材料注入到周围环境中。可以通过照射或电喷射来产生空穴 - 电子对。电子源可用于高亮度源，数字通信，阴极射线管电子源和扫描电子显微镜等应用。

9. 发明授权

US4240007A Microchannel ion gun 失效
标题翻译：微通道离子枪
公开(公告)号：US4240007A
公开(公告)日：1980-12-16
申请号：US053496
申请日：1979-06-29
申请人： Russell W. Dreyfus , Nicholas A. Penebre , Richard A. McCorkle
发明人： Russell W. Dreyfus , Nicholas A. Penebre , Richard A. McCorkle
IPC分类号： B23K28/00 , C08J7/00 , H01J3/04 , H01J27/02 , H01J27/20 , H01J37/08 , H01J49/14 , H01L21/265 , H01J43/02
CPC分类号： H01J37/08 , H01J27/20
摘要： The present invention describes an ion gun which is capable of producing relatively high density ion currents. The ion gun employs at least one capillary duct the surface of which is semiconducting and has secondary electron emission coefficient greater than one to generate ions from a source of an ionizable material and to accelerate the ions so generated.
摘要翻译：本发明描述了能够产生较高密度离子电流的离子枪。离子枪使用至少一个毛细管，其表面是半导体的，并且具有大于1的二次电子发射系数以从可电离材料的源产生离子并加速如此产生的离子。

10. 发明授权

US4236179A Versatile microsecond multiple framing camera 失效
标题翻译：多功能微秒多帧摄像机
公开(公告)号：US4236179A
公开(公告)日：1980-11-25
申请号：US53570
申请日：1979-06-29
申请人： Russell W. Dreyfus , Alfred J. Landon
发明人： Russell W. Dreyfus , Alfred J. Landon
IPC分类号： H04N5/232 , H04N7/18
CPC分类号： H04N5/232
摘要： A versatile microsecond multiple framing camera generates a switched beam of illumination derived from a laser and switched by an acousto-optic modulator. The illumination is focused on a subject, and illumination from the subject is caused to scan over a predetermined field by a mechanical or electromechanical scanner. Located in the field is an image recording device for recording the illumination directed over the field by the scanner. The image recording device, in one embodiment, includes a vidicon tube, for short term storage, and a video recorder for longer term storage. A video monitor may be driven from the video recorder. The versatility of the camera is exemplified by the ability to vary exposure times or frame rates by adjusting operator controls which drive the acousto-optic modulator and/or the electromechanical scanner. In other embodiments, the vidicon tube and video recorder can be replaced or supplemented by photographic film.
摘要翻译：通用微秒多帧摄像机产生从激光器导出并由声光调制器切换的切换照明光束。照明被聚焦在被摄体上，并且通过机械或机电扫描器使来自被摄体的照明在预定场上扫描。位于该领域中的是用于记录由扫描仪指向场的照明的图像记录装置。在一个实施例中，图像记录装置包括用于短期存储的视频管，以及用于长期存储的录像机。视频监视器可以从录像机驱动。相机的多功能性通过调整驱动声光调制器和/或机电扫描器的操作者控制来改变曝光时间或帧速率的能力被证明。在其他实施例中，可以用摄影胶片替换或补充摄像机管和录像机。

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