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1. 发明授权

US4963393A Method to prevent backside growth on substrates in a vapor deposition system 失效
标题翻译：防止气相沉积系统中底物背面生长的方法
公开(公告)号：US4963393A
公开(公告)日：1990-10-16
申请号：US403957
申请日：1989-09-07
申请人： Jitendra S. Goela , Roy D. Jaworski , Raymond L. Taylor
发明人： Jitendra S. Goela , Roy D. Jaworski , Raymond L. Taylor
IPC分类号： C23C16/44 , C23C16/04 , C23C16/458
CPC分类号： C23C16/042 , C23C16/4583
摘要： Backside growth on substrates in a vapor deposition system has been a problem resulting in cracking of the material deposited on the substrate, making replication in a vapor deposition system difficult to achieve, and requiring post deposition machining to separate the substrate-deposit from the deposition fixture. A solution to the problem is the following: the substrate is mounted on a plurality of graphite pillars, with the pillars being bonded to the substrate as near the periphery thereof as possible. A hollow body open on one side but closed on the other, and fabricated from GRAFOIL with graphite cement used as a bonding agent, is mounted on the pillars with the open end facing the substrate. The open end of the body is pressed against the substrate and sealed with a bonding agent. This completely covers the backside of the substrate and thus prevents any vapor deposition thereon.
摘要翻译：在气相沉积系统中在基底上的背面生长已经成为导致沉积在基底上的材料破裂的问题，难以实现在气相沉积系统中的复制，并且需要后沉积加工以将基底沉积物与沉积夹具分开。该问题的解决方案如下：将基板安装在多个石墨柱上，其中柱子尽可能靠近其周边地结合到基板。在一侧敞开但封闭的中空体，由用作粘合剂的石墨粘结剂的GRAFOIL制成，其顶端朝向基材安装在支柱上。将本体的开口端压在基板上并用粘合剂密封。这完全覆盖基板的背面，从而防止其上的任何气相沉积。

2. 发明授权

US5612132A Chemical vapor deposition-produced silicon carbide having improved properties 失效
标题翻译：化学气相沉积生产的具有改进性能的碳化硅
公开(公告)号：US5612132A
公开(公告)日：1997-03-18
申请号：US455007
申请日：1995-05-31
申请人： Jitendra S. Goela , Lee E. Burns , Raymond L. Taylor
发明人： Jitendra S. Goela , Lee E. Burns , Raymond L. Taylor
IPC分类号： C01B31/36 , B28B1/30 , C04B35/565 , C04B35/571 , C23C16/01 , C23C16/32 , C23C16/44
CPC分类号： C04B35/571 , C23C16/01 , C23C16/325 , C23C16/4404 , Y10S438/931 , Y10T428/26
摘要： .beta.-silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400.degree.-1500.degree. C. range, pressure 50 torr or less, H.sub.2 /methyltrichlorosilane molar ratios of 4-30 and a deposition rate of 1 .mu.m or less.
摘要翻译：通过化学气相沉积制造在可见光和红外区域中透光的β-碳化硅。沉积条件是温度在1400°-1500℃范围内，压力50托或更低，H 2 /甲基三氯硅烷摩尔比为4-30，沉积速率为1μm或更小。

3. 发明授权

US5604151A Chemical vapor deposition-produced silicon carbide having improved properties 失效
公开(公告)号：US5604151A
公开(公告)日：1997-02-18
申请号：US439034
申请日：1995-05-11
申请人： Jitendra S. Goela , Lee E. Burns , Raymond L. Taylor
发明人： Jitendra S. Goela , Lee E. Burns , Raymond L. Taylor
IPC分类号： C01B31/36 , B28B1/30 , C04B35/565 , C04B35/571 , C23C16/01 , C23C16/32 , C23C16/44 , H01L21/20
CPC分类号： C04B35/571 , C23C16/01 , C23C16/325 , C23C16/4404 , Y10S438/931 , Y10T428/26
摘要： .beta.-silicon carbide which is optically transmitting in the visible and infrared regions is produced by chemical vapor deposition. Deposition conditions are temperatures within a 1400.degree.-1500.degree. C. range, pressure 50 torr or less, H.sub.2 /methyltrichlorosilane molar ratios of 4-30 and a deposition rate of 1 .mu.m or less.

4. 发明授权

US5150507A Method of fabricating lightweight honeycomb structures 失效
标题翻译：制造轻质蜂窝结构的方法
公开(公告)号：US5150507A
公开(公告)日：1992-09-29
申请号：US626608
申请日：1990-12-12
申请人： Jitendra S. Goela , Michael Pickering , Raymond L. Taylor
发明人： Jitendra S. Goela , Michael Pickering , Raymond L. Taylor
IPC分类号： E04C2/36
CPC分类号： E04C2/36 , Y10T29/49883 , Y10T29/49888 , Y10T428/24149
摘要： A process is disclosed for fabricating lightweight honeycomb type structures out of material such as silicon carbide (SiC) and silicon (S). The lightweight structure consists of a core to define the shape and size of the structure. The core is coated with an appropriate deposit such as SiC or Si to give the lightweight structure strength and stiffness and for bonding the lightweight structure to another surface. The core is fabricated from extremely thin ribs of appropriately stiff and strong material such as graphite. First, a graphite core consisting of an outer hexagonal cell with six inner triangular cells is constructed from the graphite ribs. The graphite core may be placed on the back-up side of a SiC faceplate and then coated with SiC to produce a monolithic structure without the use of any bonding agent. Cores and methods for the fabrication thereof in which the six inner triangular cells are further divided into a plurality of cells are also disclosed.
摘要翻译：公开了用于制造诸如碳化硅（SiC）和硅（S）的材料之类的轻质蜂窝结构的方法。轻质结构由定义结构形状和尺寸的芯组成。芯材涂覆有适当的沉积物，例如SiC或Si，以提供轻质的结构强度和刚度，并将轻质结构粘结到另一个表面。芯由非常薄的肋条制成，其具有适当刚硬且坚固的材料如石墨。首先，由石墨肋构成由具有六个内三角形单元的外六角形单元组成的石墨芯。石墨芯可以放置在SiC面板的背面侧，然后涂覆有SiC以产生不需要任何粘结剂的整体结构。还公开了其六个内三角形单元被进一步分成多个单元的制造用的芯及其制造方法。

5. 发明授权

US5071596A Fabrication of lightweight ceramic mirrors by means of a chemical vapor deposition process 失效
标题翻译：化学气相沉积工艺制造轻质陶瓷镜
公开(公告)号：US5071596A
公开(公告)日：1991-12-10
申请号：US425638
申请日：1989-10-23
申请人： Jitendra S. Goela , Raymond L. Taylor
发明人： Jitendra S. Goela , Raymond L. Taylor
IPC分类号： B64G1/66 , C23C16/01 , C23C16/22 , C23C16/32 , G02B5/08
CPC分类号： B64G1/66 , C23C16/01 , G02B5/08
摘要： A process to fabricate lightweigth ceramic mirrors, and in particular, silicon/silicon carbide mirrors, involves three chemical vapor deposition steps: one to produce the mirror faceplate, the second to form the lightweight backstructure which is deposited integral to the faceplate, and the third and final step which results in the deposition of a layer of optical grade material, for example, silicon, onto the front surface of the faceplate. The mirror figure and finish are fabricated into this latter material.

6. 发明授权

US4990374A Selective area chemical vapor deposition 失效
标题翻译：选择性区域化学气相沉积
公开(公告)号：US4990374A
公开(公告)日：1991-02-05
申请号：US442263
申请日：1989-11-28
申请人： Joseph T. Keeley , Jitendra S. Goela , Michael A. Pickering , Raymond L. Taylor
发明人： Joseph T. Keeley , Jitendra S. Goela , Michael A. Pickering , Raymond L. Taylor
IPC分类号： C23C16/44 , C23C16/04 , C23C16/455 , C23C16/458
CPC分类号： C23C16/45521 , C23C16/04 , C23C16/4583
摘要： A fluid dynamic method and apparatus effects the isolation of a predetermined deposition area in a hot-walled chemical vapor deposition chamber and limits the deposition to that area. The disclosed technique reduces stress and cracking in materials produced by chemical vapor deposition, prevents backside growth, and has particular utility in the fabrication by the chemical vapor deposition process of large, lightweight mirrors.

7. 发明授权

US09228257B2 Quality multi-spectral zinc sulfide 有权
公开(公告)号：US09228257B2
公开(公告)日：2016-01-05
申请号：US13446272
申请日：2012-04-13
申请人： Jitendra S. Goela , Nathaniel E. Brese
发明人： Jitendra S. Goela , Nathaniel E. Brese
IPC分类号： C23C16/30 , C01G9/08 , C04B35/547 , C04B35/645 , C23C14/06 , C23C14/35 , G02B1/10 , G02B1/02
CPC分类号： G02B1/14 , C01G9/08 , C04B35/547 , C04B35/6455 , C04B2235/6565 , C04B2235/6567 , C04B2235/72 , C04B2235/9653 , C23C14/0629 , C23C14/357 , C23C16/306 , G02B1/02 , G02B1/10
摘要： Low scatter water clear zinc sulfide with reduced metal contamination is prepared by coating a chuck which holds zinc sulfide and machining the zinc sulfide with uncoated particles. An inert foil is cleaned with an acid cleaning method and also cleaning the zinc sulfide. The zinc sulfide is wrapped in the inert foil and then treated by a HIP process to provide a low scatter water-clear zinc sulfide. The low scatter water-clear zinc sulfide may be used in articles such as windows and domes.

8. 发明申请

US20090061254A1 Polycrystalline monolithic magnesium aluminate spinels 有权
标题翻译：多晶单片铝酸镁尖晶石
公开(公告)号：US20090061254A1
公开(公告)日：2009-03-05
申请号：US12229745
申请日：2008-08-26
申请人： Jitendra S. Goela , Heather A. G. Stern
发明人： Jitendra S. Goela , Heather A. G. Stern
IPC分类号： B22F7/02 , C23C16/06 , B05D5/12 , C25D5/54 , C23C14/34 , B32B5/16
CPC分类号： C23C16/403 , C04B35/443 , C04B35/62218 , C04B2235/786 , C04B2235/95 , Y10T428/12667
摘要： Polycrystalline monolithic magnesium aluminate spinels are disclosed. The polycrystalline monolithic magnesium aluminate spinels have small grain sizes and may be deposited on substrates as thick one-piece deposits. The polycrystalline monolithic magnesium aluminate spinels may be prepared and deposited by chemical vapor deposition. Articles made with the polycrystalline monolithic magnesium aluminate spinels also are disclosed.
摘要翻译：公开了多晶单片铝酸镁尖晶石。多晶单片铝酸镁尖晶石具有小的晶粒尺寸，并且可以作为厚的一片沉积物沉积在基底上。多晶单片铝酸镁尖晶石可通过化学气相沉积制备和沉积。还公开了用多晶单片铝酸镁尖晶石制成的制品。

9. 发明授权

US07438884B2 Silicon carbide with high thermal conductivity 有权
标题翻译：具有高导热性的碳化硅
公开(公告)号：US07438884B2
公开(公告)日：2008-10-21
申请号：US10909667
申请日：2004-08-02
申请人： Nathaniel E. Brese , Jitendra S. Goela , Michael A. Pickering
发明人： Nathaniel E. Brese , Jitendra S. Goela , Michael A. Pickering
IPC分类号： C01B31/36
CPC分类号： C23C16/325 , C04B35/565
摘要： A chemical vapor deposited, β phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.
摘要翻译：化学气相沉积，β相多晶碳化硅具有高导热性和减少堆垛层错。使用氢气和甲基三氯硅烷气体作为反应物，在特定条件下合成碳化硅。碳化硅的热导率足够高，使得其可以用作产生高热负荷的电气装置的装置和部件的部件。这些组件可以包括有源热电冷却器，散热器和风扇。

10. 发明授权

US06811761B2 Silicon carbide with high thermal conductivity 有权
标题翻译：具有高导热性的碳化硅
公开(公告)号：US06811761B2
公开(公告)日：2004-11-02
申请号：US10035877
申请日：2001-11-09
申请人： Nathaniel E. Brese , Jitendra S. Goela , Michael A. Pickering
发明人： Nathaniel E. Brese , Jitendra S. Goela , Michael A. Pickering
IPC分类号： C01B3136
CPC分类号： C23C16/325 , C04B35/565
摘要： A chemical vapor deposited, &bgr; phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.
摘要翻译：化学气相沉积，β相多晶碳化硅具有高导热性和减少堆垛层错。使用氢气和甲基三氯硅烷气体作为反应物，在特定条件下合成碳化硅。碳化硅的热导率足够高，使得其可以用作产生高热负荷的电气装置的装置和部件的部件。这些组件可以包括有源热电冷却器，散热器和风扇。

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