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1. 发明授权

US4990374A Selective area chemical vapor deposition 失效
标题翻译：选择性区域化学气相沉积
公开(公告)号：US4990374A
公开(公告)日：1991-02-05
申请号：US442263
申请日：1989-11-28
申请人： Joseph T. Keeley , Jitendra S. Goela , Michael A. Pickering , Raymond L. Taylor
发明人： Joseph T. Keeley , Jitendra S. Goela , Michael A. Pickering , Raymond L. Taylor
IPC分类号： C23C16/44 , C23C16/04 , C23C16/455 , C23C16/458
CPC分类号： C23C16/45521 , C23C16/04 , C23C16/4583
摘要： A fluid dynamic method and apparatus effects the isolation of a predetermined deposition area in a hot-walled chemical vapor deposition chamber and limits the deposition to that area. The disclosed technique reduces stress and cracking in materials produced by chemical vapor deposition, prevents backside growth, and has particular utility in the fabrication by the chemical vapor deposition process of large, lightweight mirrors.

2. 发明授权

US07438884B2 Silicon carbide with high thermal conductivity 有权
标题翻译：具有高导热性的碳化硅
公开(公告)号：US07438884B2
公开(公告)日：2008-10-21
申请号：US10909667
申请日：2004-08-02
申请人： Nathaniel E. Brese , Jitendra S. Goela , Michael A. Pickering
发明人： Nathaniel E. Brese , Jitendra S. Goela , Michael A. Pickering
IPC分类号： C01B31/36
CPC分类号： C23C16/325 , C04B35/565
摘要： A chemical vapor deposited, β phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.
摘要翻译：化学气相沉积，β相多晶碳化硅具有高导热性和减少堆垛层错。使用氢气和甲基三氯硅烷气体作为反应物，在特定条件下合成碳化硅。碳化硅的热导率足够高，使得其可以用作产生高热负荷的电气装置的装置和部件的部件。这些组件可以包括有源热电冷却器，散热器和风扇。

3. 发明授权

US06811761B2 Silicon carbide with high thermal conductivity 有权
标题翻译：具有高导热性的碳化硅
公开(公告)号：US06811761B2
公开(公告)日：2004-11-02
申请号：US10035877
申请日：2001-11-09
申请人： Nathaniel E. Brese , Jitendra S. Goela , Michael A. Pickering
发明人： Nathaniel E. Brese , Jitendra S. Goela , Michael A. Pickering
IPC分类号： C01B3136
CPC分类号： C23C16/325 , C04B35/565
摘要： A chemical vapor deposited, &bgr; phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.
摘要翻译：化学气相沉积，β相多晶碳化硅具有高导热性和减少堆垛层错。使用氢气和甲基三氯硅烷气体作为反应物，在特定条件下合成碳化硅。碳化硅的热导率足够高，使得其可以用作产生高热负荷的电气装置的装置和部件的部件。这些组件可以包括有源热电冷却器，散热器和风扇。

4. 发明授权

US08613899B2 Apparatus and method for producing free-standing materials 有权
标题翻译：用于生产独立材料的装置和方法
公开(公告)号：US08613899B2
公开(公告)日：2013-12-24
申请号：US13449126
申请日：2012-04-17
申请人： Heather A. G. Stern , Vincent DiFilippo , Jitendra S. Goela , Michael A. Pickering , Hua Bai , Debashis Chakraborty , Hangyao Wang
发明人： Heather A. G. Stern , Vincent DiFilippo , Jitendra S. Goela , Michael A. Pickering , Hua Bai , Debashis Chakraborty , Hangyao Wang
IPC分类号： B01J19/00 , C01B17/00 , C01B19/00 , H01L21/00
CPC分类号： B05B7/26 , B01F3/02 , B01F5/0256 , B01F13/1016 , C23C14/0629 , C23C14/228 , C23C14/564 , C23C16/01 , C23C16/306 , C23C16/403 , C23C16/4401 , C23C16/45512
摘要： An apparatus includes a manifold with a chamber for mixing multiple reactants. Gases are jetted into the manifold by a plurality of inlet injectors. The inlet injectors are arranged such that the gases passing into the manifold impinge on each other at a common point to form a mixture. The mixture passes through a plurality of holes in one side of the manifold into a deposition chamber where the mixture of gases impinges on additional gases at a common point to provide a reaction resulting in deposition of solid materials in the deposition chamber. The solid materials are free-standing.
摘要翻译：一种装置包括具有用于混合多个反应物的室的歧管。气体通过多个入口喷射器喷射到歧管中。入口喷射器被布置成使得进入歧管的气体在共同点处彼此撞击以形成混合物。混合物通过歧管一侧的多个孔进入沉积室，其中气体混合物在共同点撞击另外的气体以提供反应，从而在沉积室中沉积固体材料。固体材料是独立的。

5. 发明授权

US07927915B2 Low resistivity silicon carbide 有权
标题翻译：低电阻率碳化硅
公开(公告)号：US07927915B2
公开(公告)日：2011-04-19
申请号：US10872746
申请日：2004-06-21
申请人： Jitendra S. Goela , Michael A. Pickering
发明人： Jitendra S. Goela , Michael A. Pickering
IPC分类号： H01L21/00
CPC分类号： C23C16/01 , C23C16/325
摘要： An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is doped with a sufficient amount of nitrogen to provide the desired properties of the silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.
摘要翻译：不透明，低电阻率碳化硅和制造不透明低电阻率碳化硅的方法。不透明的低电阻率碳化硅被掺杂足够量的氮以提供所需的碳化硅性质。不透明的低电阻率碳化硅是一种独立的散装材料，其可以被机加工以形成用于在晶片加工期间保持半导体晶片的家具。不透明的低电阻率碳化硅在处理半导体晶片的光的波长处是不透明的。这种不透明度提供了改进的半导体晶片制造。由不透明，低电阻率碳化硅形成的边缘环可用于RTP室。

6. 发明授权

US5374412A Highly polishable, highly thermally conductive silicon carbide 失效
标题翻译：高度可抛光，高导热性的碳化硅
公开(公告)号：US5374412A
公开(公告)日：1994-12-20
申请号：US959880
申请日：1992-10-13
申请人： Michael A. Pickering , Jitendra S. Goela , Lee E. Burns
发明人： Michael A. Pickering , Jitendra S. Goela , Lee E. Burns
IPC分类号： C01B31/36 , B28B21/42 , C04B35/565 , C04B35/571 , C23C16/00 , C23C16/01 , C23C16/32 , C23C16/44 , G11B5/73 , G11B5/84
CPC分类号： C23C16/01 , C04B35/571 , C23C16/325 , C23C16/4404
摘要： Silicon carbide is produced by chemical vapor deposition at temperatures from 1340.degree.-1380.degree. C., deposition chamber pressures of 180-200 torr, H.sub.2 /methyltrichlorosilane ratio of 4-10 and deposition rate of 1-2 .mu.m/min. Furthermore, H.sub.2 supplied as a part of the gas stream contains less than about 1 part per million (ppm) O.sub.2 gas, and various means are provided to exclude particulate material from the deposition chamber. The silicon carbide is polishable to
摘要翻译：碳化硅通过化学气相沉积在1340°-1380℃，沉积室压力为180-200托，H 2 /甲基三氯硅烷比为4-10，沉积速率为1-2微米/分钟的条件下生产。此外，作为气流的一部分供应的H2含有少于约百万分之一（ppm）O 2气体，并且提供各种装置以从沉积室排除颗粒材料。碳化硅可以在Talystep机械剖析仪上测得的<5 ANGSTROM RMS，具有至少约300W / mk的导热系数。碳化硅特别适用于需要高抛光性和导热性的应用，例如硬盘驱动器和头盘组件的读/写头以及需要非常高的抛光的光学装置。

7. 发明授权

US09490157B2 Semiconductor processing 有权
公开(公告)号：US09490157B2
公开(公告)日：2016-11-08
申请号：US12384015
申请日：2009-03-31
申请人： Jitendra S. Goela , Michael A. Pickering , James T. Fahey , Melinda S. Strickland
发明人： Jitendra S. Goela , Michael A. Pickering , James T. Fahey , Melinda S. Strickland
IPC分类号： B24B37/04 , H01L21/687 , C23C16/34 , C23C16/458 , C30B25/12 , H01L21/673
CPC分类号： H01L21/68735 , C23C16/345 , C23C16/4581 , C30B25/12 , H01L21/67306 , H01L21/67309 , H01L21/68757 , H01L21/68785
摘要： Semiconductor processing and equipment are disclosed. The semiconductor equipment and processing provide semiconductor wafers with reduced defects.

8. 发明授权

US08716824B2 Article having electrically conductive and selectively passivated patterns 有权
标题翻译：物品具有导电和选择性钝化图案
公开(公告)号：US08716824B2
公开(公告)日：2014-05-06
申请号：US12322030
申请日：2009-01-28
申请人： Jitendra S. Goela , Michael A. Pickering , Neil D. Brown , Angelo Chirafisi , Mark Lefebvre , Jamie L. Triba
发明人： Jitendra S. Goela , Michael A. Pickering , Neil D. Brown , Angelo Chirafisi , Mark Lefebvre , Jamie L. Triba
IPC分类号： H01L31/0203
CPC分类号： G02B1/10 , G02B5/00 , H05B2203/013
摘要： An optical article and method of making the same are provided. The optical article has optical multi-aperture operation. The optical article has one or more electrically conductive and selectively passivated patterns.
摘要翻译：提供了一种光学制品及其制造方法。光学制品具有光学多孔径操作。光学制品具有一个或多个导电和选择性钝化图案。

9. 发明申请

US20130270356A1 APPARATUS AND METHOD FOR PRODUCING FREE-STANDING MATERIALS 有权
标题翻译：用于生产自由放置材料的装置和方法
公开(公告)号：US20130270356A1
公开(公告)日：2013-10-17
申请号：US13449126
申请日：2012-04-17
申请人： Heather A. G. Stern , Vincent DiFilippo , Jitendra S. Goela , Michael A. Pickering , Hua Bai , Debashis Chakraborty , Hangyao Wang
发明人： Heather A. G. Stern , Vincent DiFilippo , Jitendra S. Goela , Michael A. Pickering , Hua Bai , Debashis Chakraborty , Hangyao Wang
IPC分类号： B05B7/26
CPC分类号： B05B7/26 , B01F3/02 , B01F5/0256 , B01F13/1016 , C23C14/0629 , C23C14/228 , C23C14/564 , C23C16/01 , C23C16/306 , C23C16/403 , C23C16/4401 , C23C16/45512
摘要： An apparatus includes a manifold with a chamber for mixing multiple reactants. Gases are jetted into the manifold by a plurality of inlet injectors. The inlet injectors are arranged such that the gases passing into the manifold impinge on each other at a common point to form a mixture. The mixture passes through a plurality of holes in one side of the manifold into a deposition chamber where the mixture of gases impinges on additional gases at a common point to provide a reaction resulting in deposition of solid materials in the deposition chamber. The solid materials are free-standing.
摘要翻译：一种装置包括具有用于混合多个反应物的室的歧管。气体通过多个入口喷射器喷射到歧管中。入口喷射器被布置成使得进入歧管的气体在共同点处彼此撞击以形成混合物。混合物通过歧管一侧的多个孔进入沉积室，其中气体混合物在共同点撞击另外的气体以提供反应，从而在沉积室中沉积固体材料。固体材料是独立的。

10. 发明授权

US07018947B2 Low resistivity silicon carbide 有权
公开(公告)号：US07018947B2
公开(公告)日：2006-03-28
申请号：US09790442
申请日：2001-02-21
申请人： Jitendra S. Goela , Michael A. Pickering
发明人： Jitendra S. Goela , Michael A. Pickering
IPC分类号： C04B35/569 , H01B1/04
CPC分类号： C23C16/01 , C23C16/325
摘要： Free standing articles of chemical vapor deposited silicon carbide with electrical resistivities of less than 0.9 ohm-cm are provided without substantially degrading its thermal conductivity or other properties.

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