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    • 7. 发明申请
    • Nitride semiconductor light emitting device and method of manufacturing the same
    • 氮化物半导体发光器件及其制造方法
    • US20060054917A1
    • 2006-03-16
    • US10998922
    • 2004-11-30
    • Jae LeeJeong OhJin Park
    • Jae LeeJeong OhJin Park
    • H01L33/00
    • H01L33/32H01L33/14
    • A nitride semiconductor light emitting device and a method of manufacturing the same are disclosed. The nitride semiconductor light emitting device comprises an n-type nitride semiconductor layer formed on a substrate, an active layer formed on the n-type nitride semiconductor layer, a p-type nitride semiconductor layer formed on the active layer, an undoped GaN layer formed on the p-type nitride semiconductor layer, an AlGaN layer formed on the undoped GaN layer to form a two-dimensional electron gas (2DEG) layer at a bonding interface between the AlGaN layer and the undoped GaN layer, and an n-side electrode and a p-side electrode respectively formed on the n-type nitride semiconductor layer and the AlGaN layer to be connected to each other. As a hetero-junction structure of GaN/AlGaN is formed on the p-type nitride semiconductor layer, contact resistance between the p-type nitride semiconductor layer and the p-side electrode is enhanced by virtue of tunneling effect through the 2DEG layer.
    • 公开了一种氮化物半导体发光器件及其制造方法。 氮化物半导体发光器件包括形成在衬底上的n型氮化物半导体层,形成在n型氮化物半导体层上的有源层,形成在有源层上的p型氮化物半导体层,形成的未掺杂的GaN层 在p型氮化物半导体层上,形成在未掺杂的GaN层上的AlGaN层,以在AlGaN层和未掺杂的GaN层之间的键合界面处形成二维电子气(2DEG)层,以及n侧电极 以及分别形成在相互连接的n型氮化物半导体层和AlGaN层上的p侧电极。 由于在p型氮化物半导体层上形成GaN / AlGaN的异质结结构,因此通过2DEG层的隧道效应,p型氮化物半导体层与p侧电极之间的接触电阻增强。