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1. 发明授权

US06647998B2 Electrostatic charge-free solvent-type dryer for semiconductor wafers 有权
公开(公告)号：US06647998B2
公开(公告)日：2003-11-18
申请号：US09885772
申请日：2001-06-20
申请人： Jih-Churng Twu , Ming-Dar Guo , Tsung-Chieh Tsai , Sheng-Hsiung Tseng , Wei-Ming You , Yao-Pin Huang , Chia-Chun Cheng , Chin-Hsiung Ho , Ming Te More
发明人： Jih-Churng Twu , Ming-Dar Guo , Tsung-Chieh Tsai , Sheng-Hsiung Tseng , Wei-Ming You , Yao-Pin Huang , Chia-Chun Cheng , Chin-Hsiung Ho , Ming Te More
IPC分类号： B08B310
CPC分类号： H01L21/67034 , Y10S134/902
摘要： An electrostatic charge-free solvent-type dryer for drying semiconductor wafers after a wet bench process is disclosed in a preferred embodiment and in an alternate embodiment. In the preferred embodiment, the electrostatic charge-free solvent-type dryer is constructed by a tank body, a wafer carrier, an elevator means, a tank cover and a conduit for feeding the flow of solvent vapor. At least one of the tank cover, the conduit for feeding the flow of solvent vapor and the plurality of partition plates is fabricated of a non-electrostatic material such that electrostatic charge is not generated in the flow of solvent vapor. In the alternate embodiment, a deionizer is further provided in the tank cavity for producing a flux of positive ions to neutralize any negative ions that are possibly produced in the flow of solvent vapor.

2. 发明授权

US06425191B1 Apparatus and method for reducing solvent residue in a solvent-type dryer for semiconductor wafers 有权
标题翻译：用于半导体晶片的溶剂型干燥器中减少溶剂残留的装置和方法
公开(公告)号：US06425191B1
公开(公告)日：2002-07-30
申请号：US09837815
申请日：2001-04-18
申请人： Rong-Hui Kao , Ming-Dar Guo , Jih-Churng Twu , Tsung-Chieh Tsai , Chia-Chun Cheng
发明人： Rong-Hui Kao , Ming-Dar Guo , Jih-Churng Twu , Tsung-Chieh Tsai , Chia-Chun Cheng
IPC分类号： F26B300
CPC分类号： H01L21/67034
摘要： An apparatus and a method for reducing solvent residue in a solvent-type dryer for drying semiconductor wafers have been disclosed. The apparatus is constructed by a tank body, a wafer carrier, an elevator means, a tank cover, a solvent vapor conduit and an exhaust means. The exhaust means is provided for fluid communication with a compartment in the tank cover such that any residual solvent vapor or any organic residue in the compartment left from the wafer drying cycle can be evacuated to a factory exhaust system. The present invention novel method for reducing solvent or organic residue in the dryer can be carried out, after the removal of the dried wafers from the dryer, by evacuating the compartment in the tank cover for a time period of between about 30 sec. and about 300 sec. until all residual solvent vapor or organic residue is evacuated.
摘要翻译：已经公开了用于干燥半导体晶片的溶剂型干燥器中用于还原溶剂残留物的装置和方法。该装置由罐体，晶片载体，电梯装置，罐盖，溶剂蒸气导管和排气装置构成。提供排气装置用于与罐盖中的隔室流体连通，使得离开晶片干燥循环的隔室中的任何残留溶剂蒸气或任何有机残余物可被排空到工厂排气系统。本发明的用于还原干燥机中的溶剂或有机残留物的新方法可以在从干燥器中除去干燥的晶片之后，通过将储罐盖中的隔室抽空约30秒的时间来进行。约300秒直到所有残留的溶剂蒸气或有机残余物被抽空。

3. 发明授权

US06500274B2 Apparatus and method for wet cleaning wafers without ammonia vapor damage 有权
标题翻译：湿法清洗晶片的装置和方法，无氨蒸汽损坏
公开(公告)号：US06500274B2
公开(公告)日：2002-12-31
申请号：US09761417
申请日：2001-01-16
申请人： Jih-Churng Twu , Ming-Dar Guo , Chia-Chun Cheng
发明人： Jih-Churng Twu , Ming-Dar Guo , Chia-Chun Cheng
IPC分类号： B08B304
CPC分类号： H01L21/67057 , B08B3/048 , B08B3/102 , Y10S134/902
摘要： An apparatus and a method for cleaning wafers by a wet bench technique without incurring ammonia vapor damages to the wafer surface are provided. The apparatus of a wet cleaning tank consists of a tank body for holding a quantity of a cleaning solution therein; a conduit mounted through and vertical to a bottom wall of the tank body for feeding an ammonia-containing solution into the tank body through an outlet; and a cup-shaped container mounted in an upside-down position over the outlet of the conduit for blocking ammonia vapor generated by the ammonia-containing solution from reaching an upper cavity of the tank body. The method for cleaning wafers may be practiced by first positioning a conduit vertically through and with an outside wall of the conduit sealingly engaging a bottom wall of a liquid tank with an outlet end of the conduit immersed in a cleaning solution in the tank; then mounting a cup-shaped container in an upside-down position over the outlet end of the conduit to collect any ammonia vapors exiting the conduit and preventing the vapor from reaching an upper portion of the tank cavity.
摘要翻译：提供了一种通过湿式工艺技术清洗晶片的装置和方法，而不会对晶片表面造成氨蒸汽损坏。湿式清洗槽的装置由用于在其中保持一定数量的清洗液的罐体组成; 通过并垂直于罐体的底壁安装的导管，用于通过出口将含氨溶液进料到罐体中; 以及安装在管道出口上方的倒置位置的杯形容器，用于阻止由含氨溶液产生的氨蒸气到达罐体的上腔体。用于清洁晶片的方法可以通过首先将导管垂直地定位在导管的外壁上并与其中的外壁密封地接合液体箱的底壁的同时将导管的出口端浸入在罐中的清洁溶液中来实施; 然后在管道的出口端上方倒置一个杯形容器，以收集离开管道的任何氨蒸汽，并防止蒸汽到达罐腔的上部。

4. 发明授权

US06405452B1 Method and apparatus for drying wafers after wet bench 有权
标题翻译：在湿式工作台上干燥晶片的方法和装置
公开(公告)号：US06405452B1
公开(公告)日：2002-06-18
申请号：US09820119
申请日：2001-03-28
申请人： Jih-Churng Twu , Ming-Dar Guo , Yu-Chien Hsiao , Chia-Chun Cheng
发明人： Jih-Churng Twu , Ming-Dar Guo , Yu-Chien Hsiao , Chia-Chun Cheng
IPC分类号： F26B2114
CPC分类号： H01L21/67034 , Y10S134/902
摘要： A method for drying wafers after a wet bench process is disclosed. In the method, a wafer is first immersed in a volume of DI water held in a container. A mixture of alcohol vapor/inert gas is then flown into the upper portion of the container that is not filled with the volume of DI water at a flow rate of less than 20 l/min. The wafer is then withdrawn from the DI water into the upper portion of the container filled with the alcohol vapor/inert gas mixture and thereby driving DI water molecules off the surface of the wafer without leaving organic residue on the wafer surface.
摘要翻译：公开了在湿式工艺过程之后干燥晶片的方法。在该方法中，首先将晶片浸入保持在容器中的一定体积的DI水中。然后将醇蒸汽/惰性气体的混合物以小于20l / min的流速流入未充满体积的去离子水的容器的上部。然后将晶片从去离子水中排出到装有醇蒸气/惰性气体混合物的容器的上部，从而将DI水分子驱离晶片表面，而不会在晶片表面上留下有机残留物。

5. 发明授权

US06878578B1 Method for forming a high quality chemical oxide on a freshly cleaned silicon surface as a native oxide replacement 失效
标题翻译：在新鲜清洁的硅表面上形成高质量化学氧化物作为天然氧化物替代物的方法
公开(公告)号：US06878578B1
公开(公告)日：2005-04-12
申请号：US10134823
申请日：2002-04-26
申请人： Jih-Churng Twu , Tsung-Chieh Tsai , Roung-Hui Kao , Chia-Chun Cheng
发明人： Jih-Churng Twu , Tsung-Chieh Tsai , Roung-Hui Kao , Chia-Chun Cheng
IPC分类号： H01L21/28 , H01L21/306 , H01L21/336 , H01L21/8238 , H01L29/51
CPC分类号： H01L21/28211 , H01L21/02052 , H01L21/823857 , H01L29/51 , H01L29/6659
摘要： A continuous and integrated cleaning/preparation process is described to condition a silicon surface for the formation of a high quality ultra thin gate oxide described. The process is conducted with the wafer surface immersed in an aqueous solution the composition of which is varied continuously according to the steps of the process. The process includes the initial removal of contaminants and particulates followed by the removal of a native oxide. Next the silicon surface is dressed in the present of both HF and ozone by removing a thin surface layer. Any interfacial contamination or surface structural defects which lay under the native oxide are thereby removed. Next a high quality chemical oxide is grown by the action of the ozone in the aqueous bath. The chemical oxide is found to be of higher purity and structural quality than native oxide and provides a superior passivation of the active surface prior to gate oxidation. The chemical oxide is incorporated into the final gate oxide and, because of it's high quality, results in improved device performance of the final gate oxide.
摘要翻译：描述了连续且集成的清洁/制备方法以调节硅表面以形成所述的高质量超薄栅极氧化物。该工艺是将晶片表面浸入水溶液中进行的，该水溶液的组成根据该方法的步骤连续变化。该方法包括初始去除污染物和微粒，然后除去天然氧化物。接下来，通过去除薄的表面层，将硅表面穿过HF和臭氧的现在。由此除去在天然氧化物之下的任何界面污染物或表面结构缺陷。接下来，通过臭氧在水浴中的作用生长高质量的化学氧化物。发现化学氧化物具有比天然氧化物更高的纯度和结构质量，并且在栅极氧化之前提供优异的活性表面钝化。化学氧化物被结合到最终的栅极氧化物中，并且由于其高质量，导致最终栅极氧化物的器件性能的提高。

6. 发明授权

US06777251B2 Metrology for monitoring a rapid thermal annealing process 失效
标题翻译：用于监测快速热退火过程的计量
公开(公告)号：US06777251B2
公开(公告)日：2004-08-17
申请号：US10175702
申请日：2002-06-20
申请人： Ching Shan Lu , Fu-Su Lee , Wei-Ming You , Jih-Churng Twu , Yu-Chien Hsiao
发明人： Ching Shan Lu , Fu-Su Lee , Wei-Ming You , Jih-Churng Twu , Yu-Chien Hsiao
IPC分类号： H01L2166
CPC分类号： H01L21/67253 , H01L21/67098 , H01L22/20
摘要： A method including operating an ion implanted to implanting ions in a semiconductor wafer at a first ion dose level; performing a first thermal wave measurement to obtain the first thermal wave value; placing the semiconductor wafer in a rapid thermal annealing furnace and operating the furnace to rapidly heat the semiconductor wafer at a first rate for a first time period and so that the wafer is heated with intent of achieving a wafer temperature of 500° C.; performing a second thermal wave measurement to obtain a second thermal wave value; comparing the difference between the first thermal wave value and the second thermal wave value to a target range of 376.5-382.5 and rejecting the wafer as being outside of an acceptable specification if the difference is outside of the target range.
摘要翻译：一种方法，包括操作注入的离子以在第一离子剂量水平下在半导体晶片中注入离子; 执行第一热波测量以获得第一热波值; 将半导体晶片放置在快速热退火炉中并操作炉子以第一速率第一时间段快速加热半导体晶片，并且旨在实现晶片温度为500℃的晶片被加热; 执行第二热波测量以获得第二热波值; 将第一热波值和第二热波值之间的差值与376.5-382.5的目标范围进行比较，并且如果差异在目标范围之外，则拒绝晶片超出可接受规范。

7. 发明授权

US06503333B2 Method for cleaning semiconductor wafers with ozone-containing solvent 有权
公开(公告)号：US06503333B2
公开(公告)日：2003-01-07
申请号：US09726628
申请日：2000-11-30
申请人： Jih-Churng Twu , Rong-Hui Kao , Chia-Chun Cheng
发明人： Jih-Churng Twu , Rong-Hui Kao , Chia-Chun Cheng
IPC分类号： C23G102
CPC分类号： H01L21/67028 , B08B3/08 , B08B2203/005 , Y10S134/902
摘要： A method for cleaning a silicon wafer by a wet bench method with improved cleaning efficiency and without oxide formation is disclosed. In the method, the wafer may first be cleaned in a first cleaning solution that includes a base or an acid, and then the wafer is rinsed in a second solution that includes DI water and ozone. The ozone concentration in the DI water may be between about 1 ppm and about 20 ppm, and preferably between about 3 ppm and about 10 ppm. A diluted HF cleaning step may be utilized after the ozone/DI water rinsing step to remove any possible oxide formation on the silicon surface before a final rinsing step and drying step.

8. 发明授权

US06722949B2 Ventilated platen/polishing pad assembly for chemcial mechanical polishing and method of using 失效
标题翻译：用于化学机械抛光的通风压板/抛光垫组件及其使用方法
公开(公告)号：US06722949B2
公开(公告)日：2004-04-20
申请号：US09813238
申请日：2001-03-20
申请人： Tien-Chen Hu , Jih-Churng Twu
发明人： Tien-Chen Hu , Jih-Churng Twu
IPC分类号： B24B100
CPC分类号： B24B37/16 , B24B37/26 , B24D7/10
摘要： A ventilated platen/polishing pad assembly for chemical mechanical polishing copper conductors on a semiconductor wafer is disclosed. The ventilated platen is constructed by a platen having a multiplicity of apertures through a thickness of the platen, and a polishing pad that has a multiplicity of apertures for fluid communication with the multiplicity of apertures in the platen such that a gas can flow through the ventilated platen and the ventilated polishing pad to mix with a polishing slurry solution dispensed on top of the polishing pad. When an oxidizing gas is mixed with the slurry solution, the mass transfer process during the chemical mechanical polishing can be improved and thus improving the polishing uniformity of the copper surface. The invention further discloses a method for chemical mechanical polishing copper conductors on a semiconductor wafer by dispensing a polishing slurry/oxidizing gas mixture onto a top surface of a polishing pad for engaging a wafer surface and thus improving the polishing uniformity and preventing corrosion or erosion of the fresh copper surface by the acidic or basic components contained in the slurry solution.
摘要翻译：公开了一种在半导体晶片上用于化学机械抛光铜导体的通风压板/抛光垫组件。通风压板由具有穿过压板的厚度的多个孔的压板构成，抛光垫具有多个孔，用于与压板中的多个孔流体连通，使得气体可以流过通风的压板和通风的抛光垫与分配在抛光垫顶部的抛光浆液混合。当将氧化性气体与浆料溶液混合时，可以提高化学机械研磨过程中的传质过程，从而提高铜表面的研磨均匀性。本发明还公开了一种通过将抛光浆料/氧化气体混合物分配到抛光垫的顶表面上用于接合晶片表面从而提高抛光均匀性并防止腐蚀或腐蚀的方法，用于化学机械抛光半导体晶片上的铜导体新鲜的铜表面由浆液中所含的酸性或碱性成分溶液组成。

9. 发明授权

US06380056B1 Lightly nitridation surface for preparing thin-gate oxides 有权
标题翻译：用于制备薄栅氧化物的轻微氮化表面
公开(公告)号：US06380056B1
公开(公告)日：2002-04-30
申请号：US09177190
申请日：1998-10-23
申请人： Shau-Lin Shue , Jih-Churng Twu
发明人： Shau-Lin Shue , Jih-Churng Twu
IPC分类号： H01L213105
CPC分类号： H01L21/28185 , H01L21/28202 , H01L21/3144 , H01L21/3185 , H01L29/518
摘要： A method for forming a dielectric layer upon a silicon layer. There is first provided a substrate employed within a microelectronics fabrication. There is then formed over the substrate a silicon layer. There is then formed through use of a first thermal annealing method employing a nitrogen containing annealing atmosphere in absence of an oxidizing material or a reducing material silicon nitride containing layer upon a partially consumed silicon layer derived from the silicon layer. There is then oxidized through use of a second thermal annealing method employing an oxidizing material containing atmosphere the silicon nitride containing layer to form an oxidized silicon nitride containing layer upon a further consumed silicon layer derived from the partially consumed silicon layer. The method is particularly useful in forming a gate dielectric layer with enhanced hot carrier resistance properties and enhanced dopant diffusion barrier properties within a field effect transistor (FET).
摘要翻译：一种在硅层上形成电介质层的方法。首先提供了在微电子制造中使用的衬底。然后在衬底上形成硅层。然后通过在不存在氧化材料的情况下使用含氮退火气氛的第一热退火方法或者衍生自硅层的部分消耗的硅层上的还原材料氮化硅含有层形成第一热退火方法。然后通过使用含有含氮化硅的层的氧化材料的第二热退火方法，在从部分消耗的硅层衍生的进一步消耗的硅层上形成氧化的含氮化硅的层而进行氧化。该方法特别适用于在场效应晶体管（FET）中形成具有增强的热载流子电阻特性和增强的掺杂剂扩散阻挡特性的栅极介电层。

10. 发明授权

US06376377B1 Post chemical mechanical polish (CMP) planarizing substrate cleaning method employing enhanced substrate hydrophilicity 有权
标题翻译：后化学机械抛光（CMP）平面化基板清洗方法采用增强的基板亲水性
公开(公告)号：US06376377B1
公开(公告)日：2002-04-23
申请号：US09541487
申请日：2000-04-03
申请人： Weng Chang , Ying-Ho Chen , Jih-Churng Twu , Syun-Ming Jang
发明人： Weng Chang , Ying-Ho Chen , Jih-Churng Twu , Syun-Ming Jang
IPC分类号： H01L21302
CPC分类号： H01L21/76826 , H01L21/02074 , H01L21/3212 , H01L21/76801 , H01L21/76807 , H01L21/76825 , H01L21/76888
摘要： Within a method for removing from over a substrate a chemical mechanical polish (CMP) residue layer there is first provided a substrate. There is then formed over the substrate: (1) a chemical mechanical polish (CMP) substrate layer having an aperture formed therein; (2) a chemical mechanical polish (CMP) planarized patterned layer formed within the aperture within the chemical mechanical polish (CMP) substrate layer; and (3) a chemical mechanical polish (CMP) residue layer formed upon at least one of the chemical mechanical polish substrate layer and the chemical mechanical polish (CMP) planarized patterned layer, where at least one of the chemical mechanical polish (CMP) substrate layer and the chemical mechanical polish (CMP) planarized patterned layer has a first aqueous contact angle. There is then treated the at least one of the chemical mechanical polish (CMP) substrate layer and the chemical mechanical polish (CMP) planarized patterned layer having the first aqueous contact angle to provide at least one of a hydrophilic chemical mechanical polish (CMP) substrate layer and a hydrophilic chemical mechanical polish (CMP) planarized patterned layer having a second aqueous contact angle less than the first aqueous contact angle. Finally, there is then removed the chemical mechanical polish (CMP) residue layer from the at least one of the hydrophilic chemical mechanical polish (CMP) substrate layer and the hydrophilic chemical mechanical polish (CMP) planarized patterned layer with an aqueous cleaner composition.
摘要翻译：在用于从衬底上除去化学机械抛光（CMP）残留层的方法中，首先提供衬底。然后在衬底上形成：（1）其中形成有孔的化学机械抛光（CMP）衬底层; （2）化学机械抛光（CMP）平面化图案层，其形成在化学机械抛光（CMP）衬底层内的孔内; 化学机械抛光（CMP）残留层形成在至少一个化学机械抛光衬底层和化学机械抛光（CMP）平面化图案层上，其中化学机械抛光（CMP）衬底层和化学机械抛光（CMP）平面化图案层具有第一水接触角。然后，处理具有第一水接触角的化学机械抛光（CMP）衬底层和化学机械抛光（CMP）平坦化图案化层中的至少一个以提供亲水化学机械抛光（CMP）衬底中的至少一个层和亲水化学机械抛光（CMP）平面化图案层，其具有小于第一水接触角的第二水接触角。最后，用水性清洁剂组合物从亲水化学机械抛光（CMP）衬底层和亲水化学机械抛光（CMP）平坦化图案化层中的至少一个去除化学机械抛光（CMP）残留层。

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