专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06878578B1 Method for forming a high quality chemical oxide on a freshly cleaned silicon surface as a native oxide replacement 失效
标题翻译：在新鲜清洁的硅表面上形成高质量化学氧化物作为天然氧化物替代物的方法
公开(公告)号：US06878578B1
公开(公告)日：2005-04-12
申请号：US10134823
申请日：2002-04-26
申请人： Jih-Churng Twu , Tsung-Chieh Tsai , Roung-Hui Kao , Chia-Chun Cheng
发明人： Jih-Churng Twu , Tsung-Chieh Tsai , Roung-Hui Kao , Chia-Chun Cheng
IPC分类号： H01L21/28 , H01L21/306 , H01L21/336 , H01L21/8238 , H01L29/51
CPC分类号： H01L21/28211 , H01L21/02052 , H01L21/823857 , H01L29/51 , H01L29/6659
摘要： A continuous and integrated cleaning/preparation process is described to condition a silicon surface for the formation of a high quality ultra thin gate oxide described. The process is conducted with the wafer surface immersed in an aqueous solution the composition of which is varied continuously according to the steps of the process. The process includes the initial removal of contaminants and particulates followed by the removal of a native oxide. Next the silicon surface is dressed in the present of both HF and ozone by removing a thin surface layer. Any interfacial contamination or surface structural defects which lay under the native oxide are thereby removed. Next a high quality chemical oxide is grown by the action of the ozone in the aqueous bath. The chemical oxide is found to be of higher purity and structural quality than native oxide and provides a superior passivation of the active surface prior to gate oxidation. The chemical oxide is incorporated into the final gate oxide and, because of it's high quality, results in improved device performance of the final gate oxide.
摘要翻译：描述了连续且集成的清洁/制备方法以调节硅表面以形成所述的高质量超薄栅极氧化物。该工艺是将晶片表面浸入水溶液中进行的，该水溶液的组成根据该方法的步骤连续变化。该方法包括初始去除污染物和微粒，然后除去天然氧化物。接下来，通过去除薄的表面层，将硅表面穿过HF和臭氧的现在。由此除去在天然氧化物之下的任何界面污染物或表面结构缺陷。接下来，通过臭氧在水浴中的作用生长高质量的化学氧化物。发现化学氧化物具有比天然氧化物更高的纯度和结构质量，并且在栅极氧化之前提供优异的活性表面钝化。化学氧化物被结合到最终的栅极氧化物中，并且由于其高质量，导致最终栅极氧化物的器件性能的提高。

IPRDB

热门服务

关于我们

友情链接

联系方式