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1. 发明申请

US20090215264A1 PROCESS FOR SELECTIVE GROWTH OF FILMS DURING ECP PLATING 失效
标题翻译： ECP镀层选择生长膜的工艺
公开(公告)号：US20090215264A1
公开(公告)日：2009-08-27
申请号：US12037578
申请日：2008-02-26
申请人： Jick M. Yu , Wei D. Wang , Rongjun Wang , Hua Chung
发明人： Jick M. Yu , Wei D. Wang , Rongjun Wang , Hua Chung
IPC分类号： H01L21/44
CPC分类号： H01L21/76879 , C25D5/02 , H01L21/76856 , H01L21/76859 , H01L21/76862 , H01L21/76873
摘要： Methods of controlling deposition of metal on field regions of a substrate in an electroplating process are provided. In one aspect, a dielectric layer is deposited under plasma on the field region of a patterned substrate, leaving a conductive surface exposed in the openings. Electroplating on the field region is reduced or eliminated, resulting in void-free features and minimal excess plating. In another aspect, a resistive layer, which may be a metal, is used in place of the dielectric. In a further aspect, the surface of the conductive field region is modified to change its chemical potential relative to the sidewalls and bottoms of the openings.
摘要翻译：提供了在电镀工艺中控制金属在基片的场区上沉积的方法。在一个方面，电介质层在等离子体上沉积在图案化衬底的场区上，留下在开口中暴露的导电表面。场区域上的电镀被减少或消除，导致无空隙特征和最小的多余电镀。在另一方面，可以使用可以是金属的电阻层来代替电介质。在另一方面，导电场区域的表面被修改以相对于开口的侧壁和底部改变其化学势。

2. 发明授权

US08119525B2 Process for selective growth of films during ECP plating 失效
标题翻译： ECP电镀过程中膜的选择性生长
公开(公告)号：US08119525B2
公开(公告)日：2012-02-21
申请号：US12037578
申请日：2008-02-26
申请人： Jick M. Yu , Wei D. Wang , Rongjun Wang , Hua Chung
发明人： Jick M. Yu , Wei D. Wang , Rongjun Wang , Hua Chung
IPC分类号： H01L21/44
CPC分类号： H01L21/76879 , C25D5/02 , H01L21/76856 , H01L21/76859 , H01L21/76862 , H01L21/76873
摘要： Methods of controlling deposition of metal on field regions of a substrate in an electroplating process are provided. In one aspect, a dielectric layer is deposited under plasma on the field region of a patterned substrate, leaving a conductive surface exposed in the openings. Electroplating on the field region is reduced or eliminated, resulting in void-free features and minimal excess plating. In another aspect, a resistive layer, which may be a metal, is used in place of the dielectric. In a further aspect, the surface of the conductive field region is modified to change its chemical potential relative to the sidewalls and bottoms of the openings.
摘要翻译：提供了在电镀工艺中控制金属在基片的场区上沉积的方法。在一个方面，电介质层在等离子体上沉积在图案化衬底的场区上，留下在开口中暴露的导电表面。场区域上的电镀被减少或消除，导致无空隙特征和最小的多余电镀。在另一方面，可以使用可以是金属的电阻层来代替电介质。在另一方面，导电场区域的表面被修改以相对于开口的侧壁和底部改变其化学势。

3. 发明授权

US07737028B2 Selective ruthenium deposition on copper materials 有权
标题翻译：选择性钌沉积在铜材料上
公开(公告)号：US07737028B2
公开(公告)日：2010-06-15
申请号：US12240822
申请日：2008-09-29
申请人： Rongjun Wang , Hua Chung , Jick M. Yu , Praburam Gopalraja
发明人： Rongjun Wang , Hua Chung , Jick M. Yu , Praburam Gopalraja
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/28562 , C23C16/04 , C23C16/18 , H01L21/76846 , H01L21/76849 , H01L21/76868 , H01L21/76871 , H01L2221/1089
摘要： Embodiments of the invention provide processes for selectively forming a ruthenium-containing film on a copper surface over exposed dielectric surfaces. Thereafter, a copper bulk layer may be deposited on the ruthenium-containing film. In one embodiment, a method for forming layers on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a copper-containing surface and a dielectric surface, exposing the substrate to a ruthenium precursor to selectively form a ruthenium-containing film over the copper-containing surface while leaving exposed the dielectric surface, and depositing a copper bulk layer over the ruthenium-containing film.
摘要翻译：本发明的实施方案提供了在暴露的电介质表面上在铜表面上选择性地形成含钌膜的方法。此后，可以将铜本体层沉积在含钌膜上。在一个实施例中，提供了一种用于在衬底上形成层的方法，其包括将衬底定位在处理室内，其中衬底包含含铜表面和电介质表面，将衬底暴露于钌前体以选择性地形成钌同时留下电介质表面，并在含钌膜上沉积铜体积层。

4. 发明授权

US07659204B2 Oxidized barrier layer 失效
标题翻译：氧化屏障层
公开(公告)号：US07659204B2
公开(公告)日：2010-02-09
申请号：US11691302
申请日：2007-03-26
申请人： Xianmin Tang , Hua Chung , Rongjun Wang , Praburam Gopalraja , Jick M. Yu , Jenn Yue Wang
发明人： Xianmin Tang , Hua Chung , Rongjun Wang , Praburam Gopalraja , Jick M. Yu , Jenn Yue Wang
IPC分类号： H01L21/44
CPC分类号： C23C14/046 , C23C14/0036 , C23C14/0641 , C23C14/083 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76856 , H01L21/76868 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method and resultant produce of forming barrier layer based on ruthenium tantalum in a via or other vertical interconnect structure through a dielectric layer in a multi-level metallization. The RuTa layer in a RuTa/RuTaN bilayer, which may form discontinuous islands, is actively oxidized, preferably in an oxygen plasma, to thereby bridge the gaps between the islands. Alternatively, ruthenium tantalum oxide is reactive sputtered onto the RuTaN or directly onto the underlying dielectric by plasma sputtering a RuTa target in the presence of oxygen.
摘要翻译：在多层金属化中通过介电层在通孔或其它垂直互连结构中形成基于钌钽的阻挡层的方法和所得产物。可能形成不连续岛的RuTa / RuTaN双层中的RuTa层优选在氧等离子体中被有效氧化，从而桥接岛之间的间隙。或者，通过在氧气存在下通过等离子体溅射RuTa靶，氧化钌钽氧化物反应性溅射到RuTaN上或直接沉积到下面的电介质上。

5. 发明申请

US20080237029A1 Oxidized Barrier Layer 失效
标题翻译：氧化屏障层
公开(公告)号：US20080237029A1
公开(公告)日：2008-10-02
申请号：US11691302
申请日：2007-03-26
申请人： Xianmin TANG , Hua Chung , Rongjun Wang , Praburam Gopalraja , Jick M. Yu , Jenn Yue Wang
发明人： Xianmin TANG , Hua Chung , Rongjun Wang , Praburam Gopalraja , Jick M. Yu , Jenn Yue Wang
IPC分类号： C23C14/34
CPC分类号： C23C14/046 , C23C14/0036 , C23C14/0641 , C23C14/083 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76856 , H01L21/76868 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method and resultant produce of forming barrier layer based on ruthenium tantalum in a via or other vertical interconnect structure through a dielectric layer in a multi-level metallization. The RuTa layer in a RuTa/RuTaN bilayer, which may form discontinuous islands, is actively oxidized, preferably in an oxygen plasma, to thereby bridge the gaps between the islands. Alternatively, ruthenium tantalum oxide is reactive sputtered onto the RuTaN or directly onto the underlying dielectric by plasma sputtering a RuTa target in the presence of oxygen.
摘要翻译：在多层金属化中通过介电层在通孔或其它垂直互连结构中形成基于钌钽的阻挡层的方法和所得产物。可能形成不连续岛的RuTa / RuTaN双层中的RuTa层优选在氧等离子体中被有效氧化，从而桥接岛之间的间隙。或者，通过在氧气存在下通过等离子体溅射RuTa靶，氧化钌钽氧化物反应性溅射到RuTaN上或直接沉积到下面的电介质上。

6. 发明申请

US20070190780A1 ATOMIC LAYER DEPOSITION OF BARRIER MATERIALS 失效
标题翻译：原子层沉积障碍物
公开(公告)号：US20070190780A1
公开(公告)日：2007-08-16
申请号：US11691617
申请日：2007-03-27
申请人： HUA CHUNG , Rongjun Wang , Nirmalya Maity
发明人： HUA CHUNG , Rongjun Wang , Nirmalya Maity
IPC分类号： H01L21/44
CPC分类号： C23C16/45529 , C23C16/02 , C23C16/0281 , C23C16/14 , H01L21/28562 , H01L21/76843 , H01L21/76862 , H01L21/76871 , H01L21/76876
摘要： Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.
摘要翻译：提供了通过原子层沉积处理衬底以沉积一层或多层材料层的阻挡层的方法。在一个方面，提供了一种处理衬底的方法，包括通过交替地引入含有金属的化合物的一种或多种脉冲和含氮化合物的一个或多个脉冲，在衬底表面的至少一部分上沉积金属氮化物阻挡层以及通过交替地引入一种或多种含金属化合物的脉冲和一种或多种还原剂的脉冲，在金属氮化物阻挡层的至少一部分上沉积金属阻挡层。可以在沉积金属氮化物阻挡层和/或金属阻挡层之前在衬底表面上进行浸泡工艺。

7. 发明授权

US07211508B2 Atomic layer deposition of tantalum based barrier materials 失效
标题翻译：钽基阻挡材料的原子层沉积
公开(公告)号：US07211508B2
公开(公告)日：2007-05-01
申请号：US10871864
申请日：2004-06-18
申请人： Hua Chung , Rongjun Wang , Nirmalya Maity
发明人： Hua Chung , Rongjun Wang , Nirmalya Maity
IPC分类号： H01L21/4763
CPC分类号： C23C16/45529 , C23C16/02 , C23C16/0281 , C23C16/14 , H01L21/28562 , H01L21/76843 , H01L21/76862 , H01L21/76871 , H01L21/76876
摘要： Methods for processing substrate to deposit barrier layers of one or more material layers by atomic layer deposition are provided. In one aspect, a method is provided for processing a substrate including depositing a metal nitride barrier layer on at least a portion of a substrate surface by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a nitrogen containing compound and depositing a metal barrier layer on at least a portion of the metal nitride barrier layer by alternately introducing one or more pulses of a metal containing compound and one or more pulses of a reductant. A soak process may be performed on the substrate surface before deposition of the metal nitride barrier layer and/or metal barrier layer.
摘要翻译：提供了通过原子层沉积处理衬底以沉积一层或多层材料层的阻挡层的方法。在一个方面，提供了一种处理衬底的方法，包括通过交替地引入含有金属的化合物的一种或多种脉冲和含氮化合物的一个或多个脉冲，在衬底表面的至少一部分上沉积金属氮化物阻挡层以及通过交替地引入一种或多种含金属化合物的脉冲和一种或多种还原剂的脉冲，在金属氮化物阻挡层的至少一部分上沉积金属阻挡层。可以在沉积金属氮化物阻挡层和/或金属阻挡层之前在衬底表面上进行浸泡工艺。

8. 发明申请

US20070059502A1 Integrated process for sputter deposition of a conductive barrier layer, especially an alloy of ruthenium and tantalum, underlying copper or copper alloy seed layer 审中-公开
标题翻译：用于溅射沉积导电阻挡层的集成方法，特别是钌和钽的合金，铜或铜合金种子层下面
公开(公告)号：US20070059502A1
公开(公告)日：2007-03-15
申请号：US11511869
申请日：2006-08-29
申请人： Rongjun Wang , Hua Chung , Xianmin Tang , Jenn Wang , Wei Wang , Yoichiro Tanaka , Jick Yu , Praburam Gopalraja
发明人： Rongjun Wang , Hua Chung , Xianmin Tang , Jenn Wang , Wei Wang , Yoichiro Tanaka , Jick Yu , Praburam Gopalraja
IPC分类号： B32B7/00 , B32B3/00 , C23C16/00 , B05D5/12 , C23C14/00
CPC分类号： C23C14/046 , C23C14/0641 , C23C14/165 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L23/485 , H01L23/53238 , H01L2924/0002 , Y10T428/24917 , Y10T428/24926 , H01L2924/00
摘要： A fabrication method and a product for the deposition of a conductive barrier or other liner layer in a vertical electrical interconnect structure. One embodiment includes within a a hole through a dielectric layer a barrier layer of RuTaN, an adhesion layer of RuTa, and a copper seed layer forming a liner for electroplating of copper. The ruthenium content is preferably greater than 50 at % and more preferably at least 80 at % but less than 95 at %. The barrier and adhesion layers may both be sputter deposited. Other platinum-group elements substitute for the ruthenium and other refractory metals substitute for the tantalum. Aluminum alloying into RuTa when annealed presents a moisture barrier. Copper contacts include different alloying fractions of RuTa to shift the work function to the doping type.
摘要翻译：用于在垂直电互连结构中沉积导电屏障或其它衬垫层的制造方法和产品。一个实施方案包括通过电介质层的孔，RuTaN的阻挡层，RuTa的粘附层和形成铜电镀衬垫的铜籽晶层。钌含量优选大于50原子％，更优选至少80原子％但小于95原子％。阻挡层和粘附层可以被溅射沉积。其他铂族元素代替钌和其他难熔金属代替钽。当退火时铝合金化成RuTa呈现防潮层。铜触点包括RuTa的不同合金分数，以将功函数转移到掺杂类型。

9. 发明授权

US08557094B2 Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum 失效
标题翻译：具有辅助背面磁体的溅射室以提高蚀刻均匀性，并产生磁控管，从而产生钌和钽的持续自溅射
公开(公告)号：US08557094B2
公开(公告)日：2013-10-15
申请号：US11689720
申请日：2007-03-22
申请人： Xianmin Tang , Hua Chung , Rongjun Wang , Tza-Jing Gung , Praburam Gopalraja , Jick Yu , Hong Yang
发明人： Xianmin Tang , Hua Chung , Rongjun Wang , Tza-Jing Gung , Praburam Gopalraja , Jick Yu , Hong Yang
IPC分类号： C23C14/34
CPC分类号： C23C14/0641 , C23C14/345 , C23C14/35 , H01J37/3408 , H01J37/3455
摘要： A plasma sputter chamber and process for sputtering ruthenium and tantalum at low pressure or with self-sustained sputtering (SSS). The source magnetron is strongly unbalanced and of sufficient size to project the unbalanced magnetic field toward the wafer to increase the ionization probability. Sputter etch uniformity is increased by the use of an auxiliary magnet system rotating with the source magnetron but placed towards the center of rotation. It may be a larger, nearly balanced auxiliary magnetron with an outer polarity matching that of the source magnetron or an array of magnets of that polarity. An integrated process includes a directional deposition of the refractory metal and its nitride, a sputter etch, and a flash deposition.
摘要翻译：一种等离子体溅射室和用于在低压或自持溅射（SSS）下溅射钌和钽的工艺。源极磁控管是非常不平衡的，并且具有足够的尺寸以将不平衡磁场投射到晶片以增加电离概率。通过使用与源磁控管一起旋转但是朝向旋转中心放置的辅助磁体系统来增加溅射蚀刻均匀性。它可以是较大的，几乎平衡的辅助磁控管，其外极性与源极磁控管或该极性的磁体阵列的极性匹配。集成工艺包括难熔金属及其氮化物的定向沉积，溅射蚀刻和闪蒸沉积。

10. 发明申请

US20080032041A1 ATOMIC LAYER DEPOSITION OF TANTALUM-CONTAINING MATERIALS USING THE TANTALUM PRECURSOR TAIMATA 有权
标题翻译：使用TANTALUM PRECURSOR TAIMATA的含钽材料的原子层沉积
公开(公告)号：US20080032041A1
公开(公告)日：2008-02-07
申请号：US11773302
申请日：2007-07-03
申请人： Christophe Marcadal , Rongjun Wang , Hua Chung , Nirmalya Maity
发明人： Christophe Marcadal , Rongjun Wang , Hua Chung , Nirmalya Maity
IPC分类号： B05D5/12
CPC分类号： H01L29/495 , C23C16/18 , C23C16/30 , C23C16/45553 , H01L21/28079 , H01L21/28562 , H01L21/76843 , H01L21/76864 , H01L29/4958 , H01L29/517
摘要： In one embodiment, a method for forming a tantalum-containing material on a substrate is provided which includes heating a liquid tantalum precursor containing tertiaryamylimido-tris(dimethylamido) tantalum (TAIMATA) to a temperature of at least 30° C. to form a tantalum precursor gas and exposing the substrate to a continuous flow of a carrier gas during an atomic layer deposition process. The method further provides exposing the substrate to the tantalum precursor gas by pulsing the tantalum precursor gas into the carrier gas and adsorbing the tantalum precursor gas on the substrate to form a tantalum precursor layer thereon. Subsequently, the tantalum precursor layer is exposed to at least one secondary element-containing gas by pulsing the secondary element-containing gas into the carrier gas while forming a tantalum barrier layer on the substrate. The tantalum barrier layer may contain tantalum, tantalum nitride, tantalum silicon nitride, tantalum boron nitride, tantalum phosphorous nitride or tantalum oxynitride.
摘要翻译：在一个实施方案中，提供了一种用于在基底上形成含钽材料的方法，其包括将含有叔戊酰亚氨基 - 三（二甲基氨基）钽（TAIMATA）的液体钽前体加热至至少30℃的温度以形成钽前体气体，并在原子层沉积过程中将衬底暴露于载气的连续流动。该方法进一步通过将钽前体气体脉冲到载气中并将钽前驱体气体吸附在基底上以在其上形成钽前体层而使衬底暴露于钽前体气体。随后，通过在衬底上形成钽阻挡层，将含二次元素的气体脉冲送入载气中，使钽前体层暴露于至少一个含二元素气体。钽阻挡层可以包含钽，氮化钽，氮化钽，氮化硼，氮化钽或氮氧化钽。

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