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1. 发明授权

US08324571B2 Apparatus and method for measuring semiconductor device 有权
标题翻译：半导体器件测量装置及方法
公开(公告)号：US08324571B2
公开(公告)日：2012-12-04
申请号：US12713261
申请日：2010-02-26
申请人： Young-Seok Kim , Jong-Sun Peak , Young-Nam Kim , Hyung-Suk Cho , Sun-Jin Kang , Bu-Dl Yoo
发明人： Young-Seok Kim , Jong-Sun Peak , Young-Nam Kim , Hyung-Suk Cho , Sun-Jin Kang , Bu-Dl Yoo
IPC分类号： G01N23/20
CPC分类号： H01L22/20 , H01L22/12
摘要： An apparatus for measuring a semiconductor device is provided. The apparatus includes a beam emitter configured to irradiate an electron beam onto a sample having the entire region composed of a critical dimension (CD) region, which is formed by etching or development, and a normal region connected to the CD region, and an analyzer electrically connected to the beam emitter, and configured to select and set a wavelength range of a region in which a difference in reflectance between the CD region and the normal region occurs, after obtaining reflectance from the electron beam reflected by a surface of the sample according to the wavelength of the electron beam. A method of measuring a semiconductor device using the measuring apparatus is also provided. Therefore, it is possible to minimize a change in reflectance due to the thickness and properties of the semiconductor device, and set a wavelength range to monitor a specific wavelength, thereby accurately measuring and analyzing a CD value of a measurement part of the semiconductor device.
摘要翻译：提供了一种用于测量半导体器件的设备。该装置包括：射束发射器，被配置为将电子束照射到具有由蚀刻或显影形成的临界尺寸（CD）区域和连接到CD区域的法线区域构成的整个区域的样品上;以及分析器电连接到射束发射器，并且被配置为在从由样品表面反射的电子束获得反射率之后，选择和设置发生CD区域和法线区域之间的反射率差的区域的波长范围，到电子束的波长。还提供了使用测量装置测量半导体器件的方法。因此，可以使半导体器件的厚度和特性的反射率变化最小化，并且设定波长范围来监视特定波长，从而精确地测量和分析半导体器件的测量部分的CD值。

2. 发明授权

US08730475B2 Method of aligning a substrate 有权
标题翻译：对准衬底的方法
公开(公告)号：US08730475B2
公开(公告)日：2014-05-20
申请号：US13237509
申请日：2011-09-20
申请人： Young-Seok Kim , Jong-Sun Peak
发明人： Young-Seok Kim , Jong-Sun Peak
IPC分类号： G01B11/00
CPC分类号： G03F9/7046 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： In a method of aligning a substrate, a first alignment mark and a second alignment mark in a first shot region on the substrate may be sequentially identified. The substrate may be primarily aligned using identified any one of the first alignment mark and the second alignment mark. A used alignment mark and an unused alignment mark during the primary alignment process of the first alignment mark and the second alignment mark in a second shot region on the substrate may be sequentially identified. The substrate may be secondarily aligned using identified any one of the used alignment mark and the unused alignment mark during the primary alignment process. Thus, a time for identifying the alignment mark may be reduced.
摘要翻译：在对准衬底的方法中，可以顺序地识别衬底上的第一射出区域中的第一对准标记和第二对准标记。可以使用所识别的第一对准标记和第二对准标记中的任一个来主要对准衬底。可以顺序地识别在基板上的第二照射区域中的第一对准标记和第二对准标记的主对准处理期间使用的对准标记和未使用的对准标记。可以在主对准过程期间使用所使用的对准标记和未使用的对准标记中的任何一个来二次对准衬底。因此，可以减少用于识别对准标记的时间。

3. 发明申请

US20090147259A1 METHOD OF ALIGNING A SUBSTRATE 有权
标题翻译：校准基板的方法
公开(公告)号：US20090147259A1
公开(公告)日：2009-06-11
申请号：US12277346
申请日：2008-11-25
申请人： Jong-Sun Peak , Young-Seok Kim
发明人： Jong-Sun Peak , Young-Seok Kim
IPC分类号： G01B11/00
CPC分类号： G03F9/7046 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： In a method of aligning a substrate, a first alignment mark in a single shot region on the substrate may be identified. A second alignment mark in the single shot region may be selectively identified in accordance with the identification of the first alignment mark. The substrate may then be aligned using identified any one of the first alignment mark and the second alignment mark. Thus, although the substrate may be accurately aligned, the accurately aligned substrate may not be determined to be misaligned.
摘要翻译：在对准衬底的方法中，可以识别衬底上的单次注射区域中的第一对准标记。可以根据第一对准标记的识别来选择性地识别单个拍摄区域中的第二对准标记。然后可以使用标识的第一对准标记和第二对准标记中的任何一个来对准衬底。因此，尽管衬底可以精确对准，但是可能不会确定精确对准的衬底不对准。

4. 发明授权

US08134709B2 Method of aligning a substrate 有权
标题翻译：对准衬底的方法
公开(公告)号：US08134709B2
公开(公告)日：2012-03-13
申请号：US12277346
申请日：2008-11-25
申请人： Jong-Sun Peak , Young-Seok Kim
发明人： Jong-Sun Peak , Young-Seok Kim
IPC分类号： G01B11/00
CPC分类号： G03F9/7046 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： In a method of aligning a substrate, a first alignment mark in a single shot region on the substrate may be identified. A second alignment mark in the single shot region may be selectively identified in accordance with the identification of the first alignment mark. The substrate may then be aligned using identified any one of the first alignment mark and the second alignment mark. Thus, although the substrate may be accurately aligned, the accurately aligned substrate may not be determined to be misaligned.
摘要翻译：在对准衬底的方法中，可以识别衬底上的单次注射区域中的第一对准标记。可以根据第一对准标记的识别来选择性地识别单个拍摄区域中的第二对准标记。然后可以使用标识的第一对准标记和第二对准标记中的任何一个来对准衬底。因此，尽管衬底可以精确对准，但是可能不会确定精确对准的衬底不对准。

5. 发明申请

US20120008144A1 Method of Aligning a Substrate 有权
标题翻译：对准基板的方法
公开(公告)号：US20120008144A1
公开(公告)日：2012-01-12
申请号：US13237509
申请日：2011-09-20
申请人： Young-Seok Kim , Jong-Sun Peak
发明人： Young-Seok Kim , Jong-Sun Peak
IPC分类号： G01B11/00
CPC分类号： G03F9/7046 , H01L23/544 , H01L2223/5442 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： In a method of aligning a substrate, a first alignment mark and a second alignment mark in a first shot region on the substrate may be sequentially identified. The substrate may be primarily aligned using identified any one of the first alignment mark and the second alignment mark. A used alignment mark and an unused alignment mark during the primary alignment process of the first alignment mark and the second alignment mark in a second shot region on the substrate may be sequentially identified. The substrate may be secondarily aligned using identified any one of the used alignment mark and the unused alignment mark during the primary alignment process. Thus, a time for identifying the alignment mark may be reduced.
摘要翻译：在对准衬底的方法中，可以顺序地识别衬底上的第一射出区域中的第一对准标记和第二对准标记。可以使用所识别的第一对准标记和第二对准标记中的任一个来主要对准衬底。可以顺序地识别在基板上的第二照射区域中的第一对准标记和第二对准标记的主对准处理期间使用的对准标记和未使用的对准标记。可以在主对准过程期间使用所使用的对准标记和未使用的对准标记中的任何一个来二次对准衬底。因此，可以减少用于识别对准标记的时间。

6. 发明授权

US07379581B2 Method for recognizing a pattern of an alignment mark on a wafer 失效
标题翻译：用于识别晶片上的对准标记的图案的方法
公开(公告)号：US07379581B2
公开(公告)日：2008-05-27
申请号：US10617766
申请日：2003-07-14
申请人： Jong-Sun Peak
发明人： Jong-Sun Peak
IPC分类号： G06K9/00 , G06K9/36
CPC分类号： G06K9/46 , G06K9/3216 , G06K2009/3225 , G06K2209/19 , G06T7/73 , G06T2207/30148
摘要： A method for recognizing a pattern of an alignment mark on a wafer includes positioning the wafer on an adjustable wafer stage in an alignment apparatus; capturing images of a key alignment mark by magnifying an alignment mark region of the wafer; deleting image data from a region where the alignment pattern does not exist between the captured images; and extracting an alignment mark pattern by a pattern recognition of the remaining image data after the deletion of the image data. Thus, an alignment failure can be reduced because a particle on the wafer is not mistaken as an alignment mark.
摘要翻译：用于识别晶片上的对准标记的图案的方法包括将晶片定位在对准装置中的可调晶片台上; 通过放大晶片的对准标记区域来捕获键对准标记的图像; 从捕获图像之间不存在对准图案的区域删除图像数据; 以及在删除图像数据之后通过对剩余图像数据的模式识别来提取对准标记图案。因此，由于晶片上的颗粒不被误认为对准标记，因此可以降低取向失败。

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