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1. 发明授权

US06692568B2 Method and apparatus for producing MIIIN columns and MIIIN materials grown thereon 有权
标题翻译：用于生产在其上生长的MIIIN柱和MIIIN材料的方法和装置
公开(公告)号：US06692568B2
公开(公告)日：2004-02-17
申请号：US09998024
申请日：2001-11-30
申请人： Jerome J. Cuomo , N. Mark Williams , Andrew David Hanser , Eric Porter Carlson , Darin Taze Thomas
发明人： Jerome J. Cuomo , N. Mark Williams , Andrew David Hanser , Eric Porter Carlson , Darin Taze Thomas
IPC分类号： C30B2502
CPC分类号： C30B29/403 , C23C14/0063 , C23C14/355 , C30B23/00 , C30B23/002 , C30B23/005 , C30B25/18 , C30B29/406 , C30B29/605 , H01J37/3408 , H01L21/0237 , H01L21/0242 , H01L21/02439 , H01L21/02458 , H01L21/0254 , H01L21/0259 , H01L21/02631
摘要： A method utilizes sputter transport techniques to produce arrays or layers of self-forming, self-oriented columnar structures characterized as discrete, single-crystal Group III nitride posts or columns on various substrates. The columnar structure is formed in a single growth step, and therefore does not require processing steps for depositing, patterning, and etching growth masks. A Group III metal source vapor is produced by sputtering a target, for combination with nitrogen supplied from a nitrogen-containing source gas. The III/V ratio is adjusted or controlled to create a Group III metal-rich environment within the reaction chamber conducive to preferential column growth. The reactant vapor species are deposited on the growth surface to produce single-crystal MIIIN columns thereon. The columns can be employed as a strain-relieving platform for the growth of continuous, low defect-density, bulk materials. Additionally, the growth conditions can be readjusted to effect columnar epitaxial overgrowth, wherein coalescence of the Group III nitride material occurs at the tops of the columns, thereby forming a substantially continuous layer upon which additional layers can be deposited. The intervening presence of the column structure mitigates thermal mismatch stress between substrates, films, or other layers above and below the columns. A high deposition rate sputter method utilizing a non-thermionic electron/plasma injector assembly is provided to carrying out one or more of the growth steps.
摘要翻译：一种方法利用溅射传输技术产生自发成形的自取向柱状结构的阵列或层，其特征在于在各种衬底上分立的单晶III族氮化物柱或柱。柱状结构在单个生长步骤中形成，因此不需要用于沉积，图案化和蚀刻生长掩模的处理步骤。通过溅射靶，与从含氮源气体供给的氮组合来制造III族金属源蒸气。调节或控制III / V比以在反应室内产生有利于优先柱生长的III族金属富含环境。反应物蒸汽物质沉积在生长表面上以在其上产生单晶M III III柱。该柱可用作连续的，低缺陷密度的散装材料的生长的应变消除平台。此外，可以重新调整生长条件以实现柱状外延过度生长，其中III族氮化物材料的聚结发生在柱的顶部，从而形成基本上连续的层，其上可以沉积额外的层。柱结构的中间存在减轻了衬底，膜或柱之上和之下的其它层中的热失配应力。提供利用非热离子电子/等离子体注入器组件的高沉积速率溅射方法来执行一个或多个生长步骤。

2. 发明授权

US06784085B2 MIIIN based materials and methods and apparatus for producing same 有权
标题翻译：基于MIIIN的材料及其制造方法和装置
公开(公告)号：US06784085B2
公开(公告)日：2004-08-31
申请号：US09998080
申请日：2001-11-30
申请人： Jerome J. Cuomo , N. Mark Williams , Andrew David Hanser , Eric Porter Carlson , Darin Taze Thomas
发明人： Jerome J. Cuomo , N. Mark Williams , Andrew David Hanser , Eric Porter Carlson , Darin Taze Thomas
IPC分类号： H01L2128
CPC分类号： C30B29/403 , C23C14/0063 , C23C14/355 , C30B23/00 , C30B23/002 , C30B23/005 , C30B25/18 , C30B29/406 , C30B29/605 , H01J37/3408 , H01L21/0237 , H01L21/0242 , H01L21/02439 , H01L21/02458 , H01L21/0254 , H01L21/0259 , H01L21/02631
摘要： A high deposition rate sputter method is utilized to produce bulk, single-crystal, low-defect density Group III nitride materials suitable for microelectronic and optoelectronic devices and as substrates for subsequent epitaxy, and to produce highly oriented polycrystalline windows. A template material having an epitaxial-initiating growth surface is provided. A Group III metal target is sputtered in a plasma-enhanced environment using a sputtering apparatus comprising a non-thermionic electron/plasma injector assembly, thereby to producing a Group III metal source vapor. The Group III metal source vapor is combined with a nitrogen-containing gas to produce a reactant vapor species comprising Group III metal and nitrogen. The reactant vapor species is deposited on the growth surface to produce a single-crystal MIIIN layer thereon. The template material is removed, thereby providing a free-standing, single-crystal MIIIN article having a diameter of approximately 0.5 inch or greater and a thickness of approximately 50 microns or greater.
摘要翻译：利用高沉积速率的溅射方法来生产适用于微电子和光电子器件的本体，单晶，低缺陷密度III族氮化物材料，并用作后续外延的衬底，并生产高度定向的多晶窗口。提供具有外延起始生长表面的模板材料。使用包括非热离子电子/等离子体注入器组件的溅射装置在等离子体增强环境中溅射III族金属靶，从而产生III族金属源蒸气。将III族金属源蒸气与含氮气体组合以产生包含III族金属和氮的反应物蒸气物质。反应物蒸汽物质沉积在生长表面上以在其上产生单晶M III III层。除去模板材料，从而提供直径约为0.5英寸或更大，厚度约为50微米或更大的独立的单晶M III III制品。

3. 发明授权

US06787010B2 Non-thermionic sputter material transport device, methods of use, and materials produced thereby 有权
标题翻译：非热离子溅射材料输送装置，使用方法和由此生产的材料
公开(公告)号：US06787010B2
公开(公告)日：2004-09-07
申请号：US09997162
申请日：2001-11-29
申请人： Jerome J. Cuomo , N. Mark Williams
发明人： Jerome J. Cuomo , N. Mark Williams
IPC分类号： C23C1435
CPC分类号： C30B23/02 , C23C14/0063 , C23C14/3428 , C23C14/354 , C23C14/355 , C30B29/403 , C30B29/406 , H01J37/3408
摘要： A sputter transport device comprises a sealed chamber, a negatively-biased target cathode holder disposed in the chamber, and a substrate holder disposed in the chamber and spaced at a distance from the target cathode. A target cathode is bonded to the target cathode holder. A magnetron assembly is disposed in the chamber proximate to the target cathode. A negatively-biased, non-thermionic electron/plasma injector assembly is disposed between the target cathode and the substrate holder. The injector assembly fluidly communicates with a gas source and includes a plurality of hollow cathodes. Each hollow cathode includes an orifice communicating with the chamber. The device can be used to produce thin-films and ultra-thick materials in polycrystalline, single-crystal and epitaxial forms, and thus to produce articles and devices that are useful as metallic or insulating coatings, and as bulk semiconductor and optoelectronic materials.
摘要翻译：溅射输送装置包括密封室，设置在室中的负偏压目标阴极保持器和设置在室中并与靶阴极间隔一定距离的衬底保持器。目标阴极与目标阴极保持器结合。磁控管组件设置在靠近目标阴极的腔室中。负极偏置的非热电子/等离子体注入器组件设置在目标阴极和衬底保持器之间。喷射器组件与气体源流体连通并且包括多个空心阴极。每个空心阴极包括与腔连通的小孔。该器件可用于以多晶，单晶和外延形式生产薄膜和超厚材料，从而生产可用作金属或绝缘涂层以及作为体半导体和光电子材料的制品和器件。

4. 发明授权

US06582823B1 Wear-resistant polymeric articles and methods of making the same 失效
标题翻译：耐磨聚合物制品及其制造方法
公开(公告)号：US06582823B1
公开(公告)日：2003-06-24
申请号：US09304422
申请日：1999-04-30
申请人： Vinay Sakhrani , Jerome J. Cuomo , Paul M. Vernon, Jr. , Charles K. Chiklis , Charles Tomasino
发明人： Vinay Sakhrani , Jerome J. Cuomo , Paul M. Vernon, Jr. , Charles K. Chiklis , Charles Tomasino
IPC分类号： B32B2736
CPC分类号： C23C16/30 , G02B1/105 , G02B1/14 , G02B1/18 , Y02T50/67 , Y10T428/31507 , Y10T428/31536 , Y10T428/31612 , Y10T428/31663 , Y10T428/31667
摘要： A substantially optically transparent article such as a lens having a wear-resistant surface comprises a substantially optically transparent polymeric substrate (e.g., a polycarbonate or polymethyl methacrylate substrate), and having a surface portion. A hard antiabrasive interconnecting layer is formed on the surface portion (typically by vacuum deposition and preferably by plasma-enhanced chemical vapor deposition), and a lubricious hydrophobic coating layer is bonded to the interconnecting layer. The lubricious hydrophobic coating layer, together with the hard antiabrasive interconnecting layer, form a wear-resistant surface on the substrate. The lubricious coating layer is formed from a hydrophobic organic lubricant such as a perfluoropolyether, a fatty acid, or a fatty acid esters. Methods of making such articles are also disclosed.
摘要翻译：基本上光学透明的制品，例如具有耐磨表面的透镜，包括基本上光学透明的聚合物基材（例如，聚碳酸酯或聚甲基丙烯酸甲酯基材），并具有表面部分。在表面部分（通常通过真空沉积，优选通过等离子体增强化学气相沉积）形成硬的耐磨互连层，并且将润滑的疏水涂层粘合到互连层。润滑的疏水涂层与硬质耐磨互连层一起在基材上形成耐磨表面。润滑涂层由疏水性有机润滑剂如全氟聚醚，脂肪酸或脂肪酸酯形成。还公开了制造这种制品的方法。

5. 发明授权

US5585673A Refractory metal capped low resistivity metal conductor lines and vias 失效
$Refractory metal capped low resistivity metal conductor lines and vias$
公开(公告)号：US5585673A
公开(公告)日：1996-12-17
申请号：US346208
申请日：1994-11-22
申请人： Rajiv V. Joshi , Jerome J. Cuomo , Hormazdyar M. Dalal , Louis L. Hsu
发明人： Rajiv V. Joshi , Jerome J. Cuomo , Hormazdyar M. Dalal , Louis L. Hsu
IPC分类号： H01L21/28 , H01L21/312 , H01L21/316 , H01L21/318 , H01L21/768 , H01L23/498 , H01L23/522 , H01L23/532 , H01L29/43
CPC分类号： H01L21/76843 , H01L21/76838 , H01L21/7684 , H01L21/76847 , H01L21/76849 , H01L21/76852 , H01L21/76877 , H01L23/49866 , H01L23/53223 , H01L23/53228 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/09701 , Y10S148/015 , Y10S257/915 , Y10S438/959
摘要： Capping a low resistivity metal conductor line or via with a refractory metal allows for effectively using chemical-mechanical polishing techniques because the hard, reduced wear, properties of the refractory metal do not scratch, corrode, or smear during chemical-mechanical polishing. Superior conductive lines and vias are created using a combination of both physical vapor deposition (e.g., evaporation or collimated sputtering) of a low resistivity metal or alloy followed by chemical vapor deposition (CVD) of a refractory metal and subsequent planarization. Altering a ratio of SiH.sub.4 to WF.sub.6 during application of the refractory metal cap by CVD allows for controlled incorporation of silicon into the tungsten capping layer. Collimated sputtering allows for creating a refractory metal liner in an opening in a dielectric which is suitable as a diffusion barrier to copper based metalizations as well as CVD tungsten. Ideally, for faster diffusing metals like copper, liners are created by a two step collimated sputtering process wherein a first layer is deposited under relatively low vacuum pressure where directional deposition dominates (e.g., below 1 mTorr) and a second layer is deposited under relatively high vacuum pressure where scattering deposition dominates (e.g., above 1 mTorr). For refractory metals like CVD tungsten, the liner can be created in one step using collimated sputtering at higher vacuum pressures.

6. 发明授权

US5241040A Microwave processing 失效
标题翻译：微波加工
公开(公告)号：US5241040A
公开(公告)日：1993-08-31
申请号：US551716
申请日：1990-07-11
申请人： Jerome J. Cuomo , Jeffrey D. Gelorme , Michael Hatzakis, Jr. , David A. Lewis , Jane M. Shaw , Stanley J. Whitehair
发明人： Jerome J. Cuomo , Jeffrey D. Gelorme , Michael Hatzakis, Jr. , David A. Lewis , Jane M. Shaw , Stanley J. Whitehair
IPC分类号： B01J19/12 , C08G73/10 , G01N22/00 , H01L21/312 , H05B6/68 , H05B6/80 , H05K1/03 , H05K3/46
CPC分类号： H05B6/705 , B01J19/126 , C08G73/1025 , G01N22/00 , H05B6/68 , B01J2219/00191 , B01J2219/1215 , H05K1/0346 , H05K3/4644 , Y02B40/143 , Y10T428/31681 , Y10T428/31721
摘要： A method and apparatus are disclosed for conducting a physical process and a chemical reaction by exposing a material containing a volatile substance to microwave radiation where the morphology of said material will change when exposed to such radiation. The power of said radiation is adjusted over time as the morphology of the material changes to maximize the effect of the radiation in order to produce a product in a minimum amount of time that is substantially free of said volatile substance.The method and apparatus can also be used to conduct such a process or reaction with materials that do not contain a volatile material.In one embodiment a method and apparatus are disclosed for manufacturing a polyimide from a precursor in a solvent by exposing the precursor to microwave radiation in a tuneable microwave resonant cavity that is tuned during imidization to achieve critical coupling of the system. Microwave power is controlled to remove the solvent and obtain the desired level of reaction. Processing time has been reduced thirty fold as compared to conventional thermal methods.

7. 发明授权

US4637853A Hollow cathode enhanced plasma for high rate reactive ion etching and deposition 失效
标题翻译：用于高速反应离子蚀刻和沉积的空心阴极增强等离子体
公开(公告)号：US4637853A
公开(公告)日：1987-01-20
申请号：US759762
申请日：1985-07-29
申请人： Bruce Bumble , Jerome J. Cuomo , Joseph S. Logan , Steven M. Rossnagel
发明人： Bruce Bumble , Jerome J. Cuomo , Joseph S. Logan , Steven M. Rossnagel
IPC分类号： H05K3/08 , C23C14/34 , C23F1/04 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/02
CPC分类号： H01J37/32082 , C23C14/34 , H01J37/32541 , H01J37/32596 , H01J2237/3341
摘要： A metallic hollow cathode electrode structure for use in a RF-RIE sputter/etch system. The electrode defines a critical aspect ratio hollow cathode volume. In accordance with one embodiment of the invention, the electrode structure may consist of two closely spaced metal elements separated by a distance of a few centimeters. The elements are electrically and structurally connected by supports around their outer rim. An RF voltage is applied between the improved hollow cathode electrode structure and an evacuated chamber containing same through a suitable matching network. A plasma gas is supplied to the system from a point outside the electrodes and a suitable pumping system is used to maintain operating pressures in the 0.1 to 400 millitorr range. Samples to be sputtered are then placed on either of the inside electrode surfaces for sputter/etching. The aspect ratio (longest dimension of one of the elements/spacing between the elements) should be at least 4.According to a further embodiment, the hollow cathode electrode structure is characterized by a single plate having a plurality of cylindrical chambers or holes therein, each hole producing a hollow cathode glow when the system is energized. The aspect ratio (largest dimension of the chamber cross-section/depth of the chamber) for this embodiment should be at least 1.5.
摘要翻译：用于RF-RIE溅射/蚀刻系统的金属中空阴极电极结构。电极定义了关键的纵横比空心阴极体积。根据本发明的一个实施例，电极结构可以由两厘米间隔开的两个紧密间隔的金属元件组成。元件通过支撑件在其外缘周围电连接和结构连接。在改进的中空阴极电极结构和通过合适的匹配网络包含它的真空室之间施加RF电压。从电极外部的点向系统供应等离子体气体，并且使用合适的泵送系统来将操作压力保持在0.1至400毫托范围内。然后将溅射的样品放置在内部电极表面中用于溅射/蚀刻。长宽比（元件之一的最长尺寸/元件之间的间隔）应至少为4.根据另一实施例，中空阴极电极结构的特征在于具有多个圆柱形腔室或孔中的单个板，当系统通电时，每个孔产生空心阴极辉光。该实施例的纵横比（室的横截面的最大尺寸/室的深度）应至少为1.5。

8. 发明授权

US4588490A Hollow cathode enhanced magnetron sputter device 失效
标题翻译：空心阴极增强磁控溅射装置
公开(公告)号：US4588490A
公开(公告)日：1986-05-13
申请号：US736918
申请日：1985-05-22
申请人： Jerome J. Cuomo , Harold R. Kaufman , Stephen M. Rossnagel
发明人： Jerome J. Cuomo , Harold R. Kaufman , Stephen M. Rossnagel
IPC分类号： C23F4/00 , C23C14/35 , H01J37/34
CPC分类号： H01J37/3405
摘要： A plasma sputter etching/deposition system comprising an electron-emitting hollow cathode arc-source combined with a conventional plasma sputter etching/deposition system such as a magnetron. The electrons emitted are coupled into the intrinsic high energy, e.g., magnetic field and are accelerated by the plasma potential and cause a significant increase plasma density. The resultant combination allows much greater sputtering/deposition efficiency than was possible with previous devices. According to a further aspect of the invention, switched operation is possible, whereby etching may vary from isotropic to anisotropic. A side discharge hollow cathode structure is also described for enhancing certain sputtering/deposition processes, wherein electrons may be emitted from one or more openings at the side of a hollow cathode chamber to achieve more uniform electron emission in a large process chamber.
摘要翻译：等离子体溅射蚀刻/沉积系统，其包括与常规等离子体溅射蚀刻/沉积系统如磁控管组合的电子发射空心阴极电弧源。所发射的电子被耦合到固有的高能量例如磁场中，并被等离子体电势加速并且引起显着增加的等离子体密度。所得到的组合允许比以前的装置更大的溅射/沉积效率。根据本发明的另一方面，切换操作是可能的，由此蚀刻可以从各向同性到各向异性。还描述了用于增强某些溅射/沉积工艺的侧面放电中空阴极结构，其中电子可以从中空阴极室侧面的一个或多个开口发射，以在大的处理室中实现更均匀的电子发射。

9. 发明授权

US4416725A Copper texturing process 失效
标题翻译：铜纹理过程
公开(公告)号：US4416725A
公开(公告)日：1983-11-22
申请号：US454922
申请日：1982-12-30
申请人： Jerome J. Cuomo , Pamela A. Leary , Dennis S. Yee
发明人： Jerome J. Cuomo , Pamela A. Leary , Dennis S. Yee
IPC分类号： B05D3/04 , C23C8/36 , C23F4/00 , H05K3/38 , C23F1/00 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H05K3/382 , C23F4/00 , H05K2203/095
摘要： The invention is a room-temperature dry process for texturing copper on polyester, to improve adhesion of coatings to the copper surface through mechanical as well as chemical bonding. An iodine plasma is produced by backfilling an evacuated chamber with iodine and applying an RF potential. The iodine plasma includes both positive and negative iodine ions. Unprotected surface areas of the copper form a copper iodide; when the copper iodide is removed, the remaining surface is highly textured. The associated polyester is not damaged. The copper iodide is conveniently removed by a 10% hydrochloric acid solution which has no damaging effects on the associated polyester or on the metallic copper, or on associated polyester in a plastic laminated with copper.
摘要翻译：本发明是用于在聚酯上织造铜的室温干燥方法，以通过机械和化学键合来改善涂层对铜表面的附着力。通过用碘回填真空室并施加RF电位来产生碘等离子体。碘等离子体包括正和负碘离子。不受保护的铜表面积形成碘化铜; 当除去碘化铜时，剩余的表面是高度纹理的。相关聚酯不损坏。通过10％盐酸溶液方便地除去碘化铜，对相关的聚酯或金属铜或与铜层压的塑料中的相关聚酯没有损伤作用。

10. 发明授权

US4197332A Sub 100A range line width pattern fabrication 失效
标题翻译：亚100A范围线宽图案制造
公开(公告)号：US4197332A
公开(公告)日：1980-04-08
申请号：US11360
申请日：1979-02-12
申请人： Alec N. Broers , Jerome J. Cuomo , Robert B. Laibowitz , Walter W. Molzen, Jr.
发明人： Alec N. Broers , Jerome J. Cuomo , Robert B. Laibowitz , Walter W. Molzen, Jr.
IPC分类号： G03F7/004 , H01L21/027 , H01L21/312 , B05D3/06
CPC分类号： G03F7/004 , H01L21/0277 , H01L21/312 , H01L21/3121 , Y10S430/143
摘要： Sub-100A line width patterns are formed on a member by electron beam conversion and fixing of a resist that arrives at the reaction zone point by surface migration into a resist pattern of a precise thickness and width while the member rests on an electron backscattering control support. The resist is for example a contamination film from a vacuum pump oil used in evacuating the apparatus used to perform the process, e.g. silicone oil.
摘要翻译：通过电子束转换和通过表面迁移而到达反应区点的抗蚀剂固定到具有精确厚度和宽度的抗蚀剂图案的部件上形成小于100A的线宽图案，同时元件靠在电子反向散射控制支架。抗蚀剂例如是用于抽真空用于执行该方法的设备的真空泵油的污染膜，例如。硅油。

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