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1. 发明授权

US4197332A Sub 100A range line width pattern fabrication 失效
标题翻译：亚100A范围线宽图案制造
公开(公告)号：US4197332A
公开(公告)日：1980-04-08
申请号：US11360
申请日：1979-02-12
申请人： Alec N. Broers , Jerome J. Cuomo , Robert B. Laibowitz , Walter W. Molzen, Jr.
发明人： Alec N. Broers , Jerome J. Cuomo , Robert B. Laibowitz , Walter W. Molzen, Jr.
IPC分类号： G03F7/004 , H01L21/027 , H01L21/312 , B05D3/06
CPC分类号： G03F7/004 , H01L21/0277 , H01L21/312 , H01L21/3121 , Y10S430/143
摘要： Sub-100A line width patterns are formed on a member by electron beam conversion and fixing of a resist that arrives at the reaction zone point by surface migration into a resist pattern of a precise thickness and width while the member rests on an electron backscattering control support. The resist is for example a contamination film from a vacuum pump oil used in evacuating the apparatus used to perform the process, e.g. silicone oil.
摘要翻译：通过电子束转换和通过表面迁移而到达反应区点的抗蚀剂固定到具有精确厚度和宽度的抗蚀剂图案的部件上形成小于100A的线宽图案，同时元件靠在电子反向散射控制支架。抗蚀剂例如是用于抽真空用于执行该方法的设备的真空泵油的污染膜，例如。硅油。

2. 发明授权

US4316093A Sub-100A range line width pattern fabrication 失效
标题翻译：亚100A范围线宽图案制造
公开(公告)号：US4316093A
公开(公告)日：1982-02-16
申请号：US81760
申请日：1979-10-04
申请人： Alec N. Broers , Jerome J. Cuomo , Robert B. Laibowitz , Walter W. Molzen, Jr.
发明人： Alec N. Broers , Jerome J. Cuomo , Robert B. Laibowitz , Walter W. Molzen, Jr.
IPC分类号： G03F7/00 , G03F7/004 , H01L21/027 , H01L21/312 , B05D3/06
CPC分类号： H01L21/0277 , G03F7/0017 , G03F7/004 , H01L21/312 , H01L21/3121
摘要： Sub-100A line width patterns are formed on a member by electron beam conversion and fixing of a resist that arrives at the reaction zone point by surface migration into a resist pattern of a precise thickness and width while the member rests on an electron backscattering control support.
摘要翻译：通过电子束转换和通过表面迁移而到达反应区点的抗蚀剂固定到具有精确厚度和宽度的抗蚀剂图案的部件上形成小于100A的线宽图案，同时元件靠在电子反向散射控制支架。

3. 发明授权

US4557995A Method of making submicron circuit structures 失效
标题翻译：制造亚微米电路结构的方法
公开(公告)号：US4557995A
公开(公告)日：1985-12-10
申请号：US311831
申请日：1981-10-16
申请人： Alec N. Broers , Robert B. Laibowitz
发明人： Alec N. Broers , Robert B. Laibowitz
IPC分类号： G03F1/00 , G03F1/08 , G03F7/095 , G03F7/20 , H01L21/027 , H01L21/30 , H05K3/00 , H05K3/04 , H05K3/06 , G03C5/00
CPC分类号： G03F7/70425 , G03F7/0957 , G03F7/2022 , H01L21/0277 , H05K3/0082 , H05K2201/0108 , H05K2203/1572 , H05K3/048 , H05K3/064
摘要： Double sided lithography is disclosed for fabricating ultra-small multilayer microcircuit structures without need for any intermediate realignment and without need for any intermediate layer deposition involving re-establishment of surface planarity. Microcircuit patterns are defined on opposite sides of a thin substrate by an exposure tool without intermediate removal of the substrate from the exposure tool, the microcircuit pattern on one side being defined by incident patterning radiation and the microcircuit pattern on the other side being defined by patterning radiation which has passed through the thin substrate.
摘要翻译：公开了用于制造超小型多层微电路结构的双面光刻，而不需要任何中间重新对准，并且不需要涉及重新建立表面平面度的任何中间层沉积。微电路图案通过曝光工具限定在薄基板的相对侧上，而不会从曝光工具中间移除基板，一侧上的微电路图案由入射图案化辐射限定，另一侧的微电路图案由图案形成已经通过薄基板的辐射。

4. 发明授权

US4210806A High brightness electron probe beam and method 失效
标题翻译：高亮度电子探针光束及方法
公开(公告)号：US4210806A
公开(公告)日：1980-07-01
申请号：US4518
申请日：1979-01-18
申请人： Alec N. Broers
发明人： Alec N. Broers
IPC分类号： H01J37/06 , H01J37/04 , H01J37/28 , H01J37/305 , H01L21/027
CPC分类号： H01J37/04
摘要： A high brightness electron probe beam is formed by generating an electron beam with an electron gun operated in a high current emission configuration, selecting the region of the cross-over having the highest brightness and then limiting contributions to the final beam of a demagnification column to electrons originating only from this region of the cross-over.
摘要翻译：通过用高电流发射配置操作的电子枪产生电子束来形成高亮度电子探针光束，选择具有最高亮度的交叉区域，然后限制对缩小柱的最终光束的贡献，仅来自交叉的这个区域的电子。

5. 发明授权

US3971860A Method for making device for high resolution electron beam fabrication 失效
标题翻译：制造高分辨率电子束制造装置的方法
公开(公告)号：US3971860A
公开(公告)日：1976-07-27
申请号：US553184
申请日：1975-02-26
申请人： Alec N. Broers , Thomas O. Sedgwick
发明人： Alec N. Broers , Thomas O. Sedgwick
IPC分类号： B23K15/08 , G03F7/095 , H01L21/027 , H01L21/306 , H01L21/3205 , B05D3/06
CPC分类号： G03F7/0957 , B23K15/08 , H01L21/0277 , H01L21/30608 , H01L21/32051 , Y10S430/143
摘要： The disclosed method is one which provides an extremely thin substrate upon which there can be laid down a high resolution pattern of material such as metal by an electron beam fabrication technique. The latter technique is one wherein a resist is placed on the surface of the substrate. Thereafter, an electron beam is utilized to expose the resist in the desired pattern. The exposed resist is then removed and the metal or other material is laid down on the locations where the resist has been removed. With the use of the very thin substrate, the amount and effect of electron backscattering is substantially minimized whereby the consequent decrease of resolution due to exposure of the resist with the backscattered electrons is effectively eliminated. Accordingly, the resist exposure can be confined to much narrower widths than heretofore possible with known electron beam fabrication techniques.
摘要翻译：所公开的方法是提供非常薄的衬底的方法，其上可以通过电子束制造技术放置诸如金属的材料的高分辨率图案。后一种技术是其中抗蚀剂被放置在基底的表面上的技术。此后，使用电子束以期望的图案曝光抗蚀剂。然后去除暴露的抗蚀剂，并将金属或其它材料放置在已经除去抗蚀剂的位置。通过使用非常薄的衬底，电子后向散射的量和效果基本上被最小化，从而有效地消除了由于具有反向散射电子的抗蚀剂暴露而导致的分辨率的降低。因此，通过已知的电子束制造技术，抗蚀剂曝光可以被限制到比迄今为止更窄的宽度。

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