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1. 发明授权

US4637853A Hollow cathode enhanced plasma for high rate reactive ion etching and deposition 失效
标题翻译：用于高速反应离子蚀刻和沉积的空心阴极增强等离子体
公开(公告)号：US4637853A
公开(公告)日：1987-01-20
申请号：US759762
申请日：1985-07-29
申请人： Bruce Bumble , Jerome J. Cuomo , Joseph S. Logan , Steven M. Rossnagel
发明人： Bruce Bumble , Jerome J. Cuomo , Joseph S. Logan , Steven M. Rossnagel
IPC分类号： H05K3/08 , C23C14/34 , C23F1/04 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , B44C1/22 , C03C15/00 , C03C25/06 , C23F1/02
CPC分类号： H01J37/32082 , C23C14/34 , H01J37/32541 , H01J37/32596 , H01J2237/3341
摘要： A metallic hollow cathode electrode structure for use in a RF-RIE sputter/etch system. The electrode defines a critical aspect ratio hollow cathode volume. In accordance with one embodiment of the invention, the electrode structure may consist of two closely spaced metal elements separated by a distance of a few centimeters. The elements are electrically and structurally connected by supports around their outer rim. An RF voltage is applied between the improved hollow cathode electrode structure and an evacuated chamber containing same through a suitable matching network. A plasma gas is supplied to the system from a point outside the electrodes and a suitable pumping system is used to maintain operating pressures in the 0.1 to 400 millitorr range. Samples to be sputtered are then placed on either of the inside electrode surfaces for sputter/etching. The aspect ratio (longest dimension of one of the elements/spacing between the elements) should be at least 4.According to a further embodiment, the hollow cathode electrode structure is characterized by a single plate having a plurality of cylindrical chambers or holes therein, each hole producing a hollow cathode glow when the system is energized. The aspect ratio (largest dimension of the chamber cross-section/depth of the chamber) for this embodiment should be at least 1.5.
摘要翻译：用于RF-RIE溅射/蚀刻系统的金属中空阴极电极结构。电极定义了关键的纵横比空心阴极体积。根据本发明的一个实施例，电极结构可以由两厘米间隔开的两个紧密间隔的金属元件组成。元件通过支撑件在其外缘周围电连接和结构连接。在改进的中空阴极电极结构和通过合适的匹配网络包含它的真空室之间施加RF电压。从电极外部的点向系统供应等离子体气体，并且使用合适的泵送系统来将操作压力保持在0.1至400毫托范围内。然后将溅射的样品放置在内部电极表面中用于溅射/蚀刻。长宽比（元件之一的最长尺寸/元件之间的间隔）应至少为4.根据另一实施例，中空阴极电极结构的特征在于具有多个圆柱形腔室或孔中的单个板，当系统通电时，每个孔产生空心阴极辉光。该实施例的纵横比（室的横截面的最大尺寸/室的深度）应至少为1.5。

2. 发明授权

US5133986A Plasma enhanced chemical vapor processing system using hollow cathode effect 失效
标题翻译：使用中空阴影效应的等离子体增强化学蒸气处理系统
公开(公告)号：US5133986A
公开(公告)日：1992-07-28
申请号：US593141
申请日：1990-10-05
申请人： Joseph M. Blum , Bruce Bumble , Kevin K. Chan , Joao R. Conde , Jerome J. Cuomo , William F. Kane
发明人： Joseph M. Blum , Bruce Bumble , Kevin K. Chan , Joao R. Conde , Jerome J. Cuomo , William F. Kane
IPC分类号： H01L21/205 , C23C16/509 , H01J37/32
CPC分类号： H01J37/32082 , C23C16/5093 , Y10S156/913
摘要： A high-efficiency, low-temperature, plasma-enhanced chemical vapor deposition (PECVD) system for growing or depositing various types of thin films on substrate surfaces, or etching such surfaces, using substrates of materials such as silicon, plastic, etc. The system uses a hollow-cathode-effect electron source with a surrounding confining electrode to create a plasma at the substrate surface to insure that the density of reactive species is both enhanced and localized at the substrate surface thus causing the rate of growth of the films, or the etch rate, to increase so that the process can take place at much lower temperatures and power levels. A particular embodiment involves the growing of hydrogenated amorphous silicon (a:Si:H), at room temperature, on silicon using a tubular reactor containing a cylindrical electrode lining the inside of the reactor walls acting as a counter electrode for an rf-powered, substrate-supporting electrode near the center of the reactor. A set of silicon wafers, on which the amorphous silicon is grown, is mounted on the latter electrode. The reaction gases (silane) flowing between the electrodes are decomposed in a plasma excited by an rf power source (13.56 MHz) connected to the substrate-supporting electrode. With the use of appropriate deposition parameters (silane flow rate, pressure, applied power and frequency, and substrate spacing) room temperature growth of a-Si:H is achieved at growth rates up to 15 .ANG./sec, while keeping a low hydrogen concentration (.about.10%) and the bonded hydrogen in the Si-H monohydride configuration.

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