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1. 发明授权

US5471948A Method of making a compound semiconductor having metallic inclusions 失效
标题翻译：制造具有金属夹杂物的化合物半导体的方法
公开(公告)号：US5471948A
公开(公告)日：1995-12-05
申请号：US240880
申请日：1994-05-11
申请人： Jeremy Burroughes , Rodney T. Hodgson , David T. McInturff , Michael R. Melloch , Nobuo Otsuka , Paul M. Solomon , Alan C. Warren , Jerry M. Woodall
发明人： Jeremy Burroughes , Rodney T. Hodgson , David T. McInturff , Michael R. Melloch , Nobuo Otsuka , Paul M. Solomon , Alan C. Warren , Jerry M. Woodall
IPC分类号： H01L31/0232 , H01L31/105 , H01L21/20
CPC分类号： H01L31/0232 , H01L31/105
摘要： A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode includes a substrate having a first compound semiconductor layer disposed thereon. The PiN photodiode further includes an optically responsive compound semiconductor layer disposed above the first compound semiconductor layer. The optically responsive layer includes a plurality of buried Schottky barriers, each of which is associated with an inclusion within a crystal lattice of a Group III-V material. The PiN device also includes a further compound semiconductor layer disposed above the optically responsive layer. For a transversely illuminated embodiment, waveguiding layers may also be disposed above and below the PiN structure. In one example the optically responsive layer is comprised of GaAs:As. The GaAs:As exhibits a very low room temperature dark current, even under forward bias conditions, and a responsivity to 1.3 micrometer radiation modulated at frequencies greater than 1 GHz.
摘要翻译：具有金属沉淀物的掺杂或未掺杂的光响应材料，以及利用该材料用于检测波长为1.3微米的光的PiN光电二极管。 PiN光电二极管包括其上设置有第一化合物半导体层的基板。 PiN光电二极管还包括设置在第一化合物半导体层上方的光学响应化合物半导体层。光学响应层包括多个埋置的肖特基势垒，其中每个都包含在III-V族材料的晶格内。 PiN器件还包括设置在光学响应层上方的另一化合物半导体层。对于横向照明的实施例，也可以在PiN结构的上方和下方设置波导层。在一个实例中，光响应层由GaAs：As组成。 GaAs：As表现出非常低的室温暗电流，即使在正向偏置条件下，并且对频率大于1 GHz的1.3微米辐射的响应度也是如此。

2. 发明授权

US5371399A Compound semiconductor having metallic inclusions and devices fabricated therefrom 失效
标题翻译：具有金属夹杂物的复合半导体及其制造的器件
公开(公告)号：US5371399A
公开(公告)日：1994-12-06
申请号：US104423
申请日：1993-08-09
申请人： Jeremy Burroughes , Rodney T. Hodgson , David T. McInturff , Michael R. Melloch , Nobuo Otsuka , Paul M. Solomon , Alan C. Warren , Jerry M Woodall
发明人： Jeremy Burroughes , Rodney T. Hodgson , David T. McInturff , Michael R. Melloch , Nobuo Otsuka , Paul M. Solomon , Alan C. Warren , Jerry M Woodall
IPC分类号： H01L31/0232 , H01L31/105 , H01L29/48
CPC分类号： H01L31/0232 , H01L31/105
摘要： A doped or undoped photoresponsive material having metallic precipitates, and a PiN photodiode utilizing the material for detecting light having a wavelength of 1.3 micrometers. The PiN photodiode includes a substrate having a first compound semiconductor layer disposed thereon. The PiN photodiode further includes an optically responsive compound semiconductor layer disposed above the first compound semiconductor layer. The optically responsive layer includes a plurality of buried Schottky barriers, each of which is associated with an inclusion within a crystal lattice of a Group III-V material. The PiN device also includes a further compound semiconductor layer disposed above the optically responsive layer. For a transversely illuminated embodiment, waveguiding layers may also be disposed above and below the PiN structure. In one example the optically responsive layer is comprised of GaAs:As. The GaAs:As exhibits a very low room temperature dark current, even under forward bias conditions, and a responsivity to 1.3 micrometer radiation modulated at frequencies greater than 1 GHz.
摘要翻译：具有金属沉淀物的掺杂或未掺杂的光响应材料，以及利用该材料用于检测波长为1.3微米的光的PiN光电二极管。 PiN光电二极管包括其上设置有第一化合物半导体层的基板。 PiN光电二极管还包括设置在第一化合物半导体层上方的光学响应化合物半导体层。光学响应层包括多个埋置的肖特基势垒，其中每个都包含在III-V族材料的晶格内。 PiN器件还包括设置在光学响应层上方的另一化合物半导体层。对于横向照明的实施例，也可以在PiN结构的上方和下方设置波导层。在一个实例中，光响应层由GaAs：As组成。 GaAs：As表现出非常低的室温暗电流，即使在正向偏置条件下，并且对频率大于1 GHz的1.3微米辐射的响应度也是如此。

3. 发明授权

US5508829A LTG AlGaAs non-linear optical material and devices fabricated therefrom 失效
标题翻译： LTG AlGaAs非线性光学材料及其制造的器件
公开(公告)号：US5508829A
公开(公告)日：1996-04-16
申请号：US264177
申请日：1994-06-22
申请人： John L. Freeouf , Rodney T. Hodgson , Peter D. Kirchner , Michael R. Melloch , Jerry M. Woodall , David D. Nolte
发明人： John L. Freeouf , Rodney T. Hodgson , Peter D. Kirchner , Michael R. Melloch , Jerry M. Woodall , David D. Nolte
IPC分类号： G02F1/355 , G02F1/015 , G02F1/35 , H01L31/0232
CPC分类号： G02F1/3551 , G02F2202/101 , G03H2001/0264
摘要： A light responsive device (10) has a body (12) that includes a matrix comprised of Group III-V material, the matrix having inclusions (14) comprised of a Group V material contained therein. The body is responsive to a presence of a light beam that has a spatially varying intensity for modifying in a corresponding spatially varying manner a distribution of trapped photoexcited charge carriers within the body. The distribution of trapped charge carriers induces a corresponding spatial variation in at least one optical property of the Group III-V material, such as the index of refraction of the Group III-V material and/or an absorption coefficient of the Group III-V material. The Group III-V material is comprised of LTG GaAs:As or LTG AlGaAs:As. In an optical storage medium embodiment of the invention the spatial variation in the intensity of the light beam results from a simultaneous application of a first light beam (LB1) and a second light beam (LB2) to the body, and from interference fringes resulting from an intersection of said first and second light beams.
摘要翻译：光响应装置（10）具有主体（12），其包括由III-V族材料构成的基体，所述基体具有由其中所含的V族材料构成的夹杂物（14）。身体响应于存在具有空间变化的强度的光束，以便以对应的空间变化的方式修改被俘获的光激发电荷载体在体内的分布。捕获的电荷载体的分布在III-V族材料的至少一种光学性质中引起相应的空间变化，例如III-V族材料的折射率和/或III-V族的吸收系数材料。 III-V族材料由LTG GaAs：As或LTG AlGaAs：As组成。在本发明的光学存储介质的实施例中，光束的强度的空间变化是由于将第一光束（LB1）和第二光束（LB2）同时施加到主体，并且由干涉条纹所述第一和第二光束的交叉。

4. 发明授权

US4550257A Narrow line width pattern fabrication 失效
标题翻译：狭窄线宽图案制作
公开(公告)号：US4550257A
公开(公告)日：1985-10-29
申请号：US626178
申请日：1984-06-29
申请人： Gerd K. Binnig , Randall M. Feenstra , Rodney T. Hodgson , Heinrich Rohrer , Jerry M. Woodall
发明人： Gerd K. Binnig , Randall M. Feenstra , Rodney T. Hodgson , Heinrich Rohrer , Jerry M. Woodall
IPC分类号： H01L21/3205 , C23C16/04 , H01J37/317 , H01J37/32
CPC分类号： B82Y10/00 , B82Y40/00 , C23C16/047 , H01J37/3174 , H01J37/32 , H01J2237/31738 , H01J2237/31759 , Y10S977/857
摘要： The formation of lines of the order of 8 Angstroms wide is achieved using a tunneling current through a gas that changes to provide a residue that is the basis of the line. The tunneling current energy is tuned to the energy required to dissociate the gas.
摘要翻译：使用穿过气体的隧道电流来实现8埃量级的线的形成，该气体改变以提供作为线的基础的残留物。隧道电流能量被调节到解离气体所需的能量。

5. 发明授权

US4472206A Method of activating implanted impurities in broad area compound semiconductors by short time contact annealing 失效
标题翻译：通过短时间接触退火激活广域化合物半导体中的植入杂质的方法
公开(公告)号：US4472206A
公开(公告)日：1984-09-18
申请号：US440655
申请日：1982-11-10
申请人： Rodney T. Hodgson , Thomas N. Jackson , Hans S. Rupprecht , Jerry M. Woodall
发明人： Rodney T. Hodgson , Thomas N. Jackson , Hans S. Rupprecht , Jerry M. Woodall
IPC分类号： C30B29/40 , C30B31/22 , H01L21/265 , H01L21/314 , H01L21/324 , H01L21/477
CPC分类号： H01L21/3245 , H01L21/26546 , H01L21/314
摘要： Ion implanted impurity activation in a multi-element compound semiconductor crystal such as gallium arsenide, GaAs, over a broad integrated circuit device area, is accomplished using a short time anneal, in the proximity of a uniform concentration of the most volatile element of said crystal, in solid form, over the broad integrated circuit device area surface. A GaAs integrated circuit wafer having ion implanted impurities in the surface for an integrated circuit is annealed in the vicinity of 800.degree.-900.degree. C. for a time of the order of 1-20 seconds in the proximity of a uniform layer of solid arsenic.
摘要翻译：在广泛的集成电路器件区域上的多元素化合物半导体晶体（例如砷化镓，GaAs）中的离子注入杂质活化是通过使用短时间退火在所述晶体的最易挥发元素的均匀浓度附近以固体形式，在广泛的集成电路器件区域表面上。在集成电路表面上具有离子注入杂质的GaAs集成电路晶片在800-900℃附近在均匀的固体砷层附近退火约1-20秒的时间。

6. 发明授权

US4354198A Zinc-sulphide capping layer for gallium-arsenide device 失效
标题翻译：用于砷化镓器件的硫化锌封盖层
公开(公告)号：US4354198A
公开(公告)日：1982-10-12
申请号：US154700
申请日：1980-05-30
申请人： Rodney T. Hodgson , George D. Pettit , Thomas O. Sedgwick , Jerry M. Woodall
发明人： Rodney T. Hodgson , George D. Pettit , Thomas O. Sedgwick , Jerry M. Woodall
IPC分类号： H01L21/324 , H01L21/314 , H01L21/428 , H01L23/29 , H01L23/31 , H01L29/161
CPC分类号： H01L23/3171 , H01L21/428 , H01L23/291 , H01L2924/0002
摘要： The disclosure provides for the use of a group II-VI compound semiconductor as a surface passivator to control recombination of charge carriers at the surface of a group III-V compound semiconductor by a localized heating step. It is theorized for practice of the invention that the control of the recombination of the charge carriers is achieved by chemical reaction of the II-VI compound with excess group V element. In particular the disclosure provides for the use of a capping layer of laser annealed ZnS as a passivating layer on a GaAs device.
摘要翻译：本公开提供了使用II-VI族化合物半导体作为表面钝化剂以通过局部加热步骤控制III-V族化合物半导体的表面上的载流子的重组。对于本发明的实践，理论上可以通过II-VI化合物与过量的V族元素的化学反应来实现电荷载体的重组的控制。具体地，本公开提供了在GaAs器件上使用激光退火的ZnS的覆盖层作为钝化层。

7. 发明授权

US4202704A Optical energy conversion 失效
标题翻译：光能转换
公开(公告)号：US4202704A
公开(公告)日：1980-05-13
申请号：US968887
申请日：1978-12-13
申请人： Rodney T. Hodgson , Harold J. Hovel , Jerry M. Woodall
发明人： Rodney T. Hodgson , Harold J. Hovel , Jerry M. Woodall
IPC分类号： H01L31/04 , H01L31/055
CPC分类号： H01L31/055 , Y02E10/52
摘要： Enhanced efficiency can be achieved in the construction of semiconductor optical energy conversion devices such as solar cells by providing a translucent frequency shifting supporting member with appropriate doping such as Al.sub.2 O.sub.3 :Cr.sup.+3 (Ruby) that is capable of shifting the wavelength of incident light energy in the direction of greatest efficiency of the semiconductor device. The efficiency can be further enhanced by providing a crystal perfection accommodation region between the active region of the device and the light frequency shifting substrate.
摘要翻译：通过提供具有适当掺杂的半透明变频支撑构件，例如能够移动入射光能量的波长的Al 2 O 3 :Cr + 3（红宝石），可以在诸如太阳能电池的半导体光能转换装置的构造中实现增强的效率在半导体器件效率最高的方向。通过在器件的有源区域和光变换衬底之间提供晶体完整的容纳区域可以进一步提高效率。

8. 发明授权

US5556899A Fluorinated carbon polymer composites 失效
标题翻译：氟化碳聚合物复合材料
公开(公告)号：US5556899A
公开(公告)日：1996-09-17
申请号：US346766
申请日：1994-11-30
申请人： Ali Afzali-Ardakani , Juan Ayala-Esquilin , Bodil E. Braren , Shahrokh Daijavad , Elizabeth Foster , James L. Hedrick, Jr. , Jeffrey C. Hedrick , Rodney T. Hodgson , Ashit A. Mehta , Steven E. Molis , Jane M. Shaw , Stephen L. Tisdale , Alfred Viehbeck
发明人： Ali Afzali-Ardakani , Juan Ayala-Esquilin , Bodil E. Braren , Shahrokh Daijavad , Elizabeth Foster , James L. Hedrick, Jr. , Jeffrey C. Hedrick , Rodney T. Hodgson , Ashit A. Mehta , Steven E. Molis , Jane M. Shaw , Stephen L. Tisdale , Alfred Viehbeck
IPC分类号： C08J7/00 , C08K3/04 , C08K9/02 , H01B3/30 , H01L21/312 , H05K1/03 , H05K3/10 , C08J5/18
CPC分类号： H05K1/0373 , C08K3/04 , C08K9/02 , H05K1/0346 , H05K2201/0154 , H05K2201/0239 , H05K2201/0323 , H05K2201/068 , H05K3/105 , Y10T428/31544
摘要： Disclosed is a process of effecting a change in the dielectric constant and coefficient of thermal expansion of a polyimide material, by forming a composite based on a dispersion of 2-60 wt. % of fluorinated particulate carbon material and a polyimide or polyimide precursor, and heating the dispersion to about 400.degree. C. at 65.degree.-200.degree. C./second.
摘要翻译：公开了通过基于2-60重量份的分散体形成复合材料来实现聚酰亚胺材料的介电常数和热膨胀系数的变化的方法。％的氟化颗粒碳材料和聚酰亚胺或聚酰亚胺前体，并将分散体在65℃-200℃/秒加热至约400℃。

9. 发明授权

US5591285A Fluorinated carbon polymer composites 失效
标题翻译：氟化碳聚合物复合材料
公开(公告)号：US5591285A
公开(公告)日：1997-01-07
申请号：US475670
申请日：1995-07-24
申请人： Ali Afzali-Ardakani , Juan Ayala-Esquilin , Bodil E. Braren , Shahrokh Daijavad , Elizabeth Foster , James L. Hedrick, Jr. , Jeffrey C. Hedrick , Rodney T. Hodgson , Ashit A. Mehta , Steven E. Molis , Jane M. Shaw , Stephen L. Tisdale , Alfred Viehbeck
发明人： Ali Afzali-Ardakani , Juan Ayala-Esquilin , Bodil E. Braren , Shahrokh Daijavad , Elizabeth Foster , James L. Hedrick, Jr. , Jeffrey C. Hedrick , Rodney T. Hodgson , Ashit A. Mehta , Steven E. Molis , Jane M. Shaw , Stephen L. Tisdale , Alfred Viehbeck
IPC分类号： C08J7/00 , C08K3/04 , C08K9/02 , H01B3/30 , H01L21/312 , H05K1/03 , H05K3/10 , B32B31/28 , B32B27/16
CPC分类号： H05K1/0373 , C08K3/04 , C08K9/02 , H05K1/0346 , H05K2201/0154 , H05K2201/0239 , H05K2201/0323 , H05K2201/068 , H05K3/105 , Y10T428/31544
摘要： Disclosed are structures comprising a composite of fluorinated particulate carbon dispersed in a polymer, the fluorinated carbon being present in an amount sufficient to reduce the dielectric constant of the composition, the structure also including electrical conductor patterns.The composite can be made conductive by irradiating it with an UV excimer laser.
摘要翻译：公开了包含分散在聚合物中的氟化颗粒碳的复合物的结构，氟化碳的存在量足以降低组合物的介电常数，该结构还包括电导体图案。可以通过用UV准分子激光器照射该复合材料来导电。

10. 发明授权

US5440233A Atomic layered materials and temperature control for giant magnetoresistive sensor 失效
标题翻译：用于巨磁阻传感器的原子分层材料和温度控制
公开(公告)号：US5440233A
公开(公告)日：1995-08-08
申请号：US56003
申请日：1993-04-30
申请人： Rodney T. Hodgson , Paul M. Marcus , Victor L. Moruzzi
发明人： Rodney T. Hodgson , Paul M. Marcus , Victor L. Moruzzi
IPC分类号： G01R33/09 , G11B5/00 , G11B5/33 , G11B5/39 , G11B5/455 , G11B5/465 , G11B19/02 , G11B33/14 , H01F10/00 , H01F10/08 , H01F10/32 , H01L43/08 , G01R33/02 , G11B5/127 , H01L43/00
CPC分类号： B82Y25/00 , G01R33/093 , G11B19/02 , G11B33/14 , G11B5/39 , G11B5/455 , G11B5/465 , G11B2005/0016
摘要： An apparatus and method for detecting a magnetic field has been described incorporating a material which switches from an antiferromagnetic order to a ferromagnetic order upon the application of a magnetic field and wherein the material is FeRh, FeRu, FePd or MnPt, a heating element for controlling the temperature of the material and a current source for sensing the change of resistance of the material to determine when the material is ferromagnetically ordered. The invention overcomes the problem of small changes in resistance of magnetoresistive sensors operating in only the ferromagnetic order.
摘要翻译：已经描述了用于检测磁场的装置和方法，其包括在施加磁场时从反铁磁顺序转变为铁磁顺序的材料，并且其中所述材料是FeRh，FeRu，FePd或MnPt，用于控制的加热元件材料的温度和用于感测材料的电阻变化的电流源以确定材料何时被铁磁排序。本发明克服了仅以铁磁顺序操作的磁阻传感器的电阻变化小的问题。

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