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1. 发明授权

US07043823B2 Method of manufacturing a current-perpendicular-to-plane magnetoresistive device with oxidized free layer side regions 有权
标题翻译：制造具有氧化自由层侧面区域的电流 - 垂直于平面的磁阻器件的方法
公开(公告)号：US07043823B2
公开(公告)日：2006-05-16
申请号：US10869590
申请日：2004-06-15
申请人： Jeffrey R. Childress , Elizabeth A. Dobisz , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang , Son Van Nguyen
发明人： Jeffrey R. Childress , Elizabeth A. Dobisz , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang , Son Van Nguyen
IPC分类号： G11B5/127 , B44C1/22
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3116 , G11B5/313 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B2005/3996 , H01L43/08 , H01L43/12 , Y10T29/49032 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A current-perpendicular-to the-plane (CPP) magnetoresistive device, such as a magnetic tunnel junction (MTJ), is formed by patterning a capping layer (e.g., using resist) in the shape of a central region of an underlying free ferromagnetic layer that in turn resides over additional layers of the MTJ. Side regions of the capping layer are removed by ion milling or etching down into the free ferromagnetic layer. Unmasked side regions of the ferromagnetic layer are then oxidized to render them locally non-ferromagnetic and electrically insulating.
摘要翻译：电流垂直于平面（CPP）的磁阻器件，例如磁性隧道结（MTJ），是通过将覆盖层（例如，使用抗蚀剂）图案化成下层自由铁磁性的中心区域层又依赖于MTJ的附加层。通过离子铣削或蚀刻到自由铁磁层中去除覆盖层的侧面区域。然后将铁磁性层的未掩模的侧面区域氧化，使其局部非铁磁性并电绝缘。

2. 发明授权

US06847510B2 Magnetic tunnel junction device with bottom free layer and improved underlayer 有权
标题翻译：具有底部自由层和改进的底层的磁隧道连接装置
公开(公告)号：US06847510B2
公开(公告)日：2005-01-25
申请号：US10256722
申请日：2002-09-27
申请人： Jeffrey R. Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
发明人： Jeffrey R. Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
IPC分类号： G11B5/31 , G11B5/39 , H01L43/08 , G11C11/16
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3903 , G11B5/3909 , H01L43/08
摘要： A magnetic tunnel junction (MTJ) device usable as a magnetic memory cell or magnetoresistive sensor, such as a MTJ read head for magnetic recording, has the free ferromagnetic layer located on the bottom of the device, the bottom free layer being formed on a special underlayer. The MTJ read head may be a flux-guided head that uses the free layer as a flux guide for directing magnetic flux from the magnetic media to the sensing region of the MTJ. The special underlayer for the growth of the free layer is an alloy comprising Mn, one of Pt, Ni, Ir and Os, and an additive X selected from Ta, Al, Ti, Cu, Cr and V. Without the additive, the underlayer alloy is antiferromagnetic. The additive is present in an amount sufficient to render the alloy to have no magnetic ordering, i.e., it is neither antiferromagnetic nor ferromagnetic, but without substantially affecting the preferred crystalline texture and unit cell size so that the underlayer is well-suited as a growth-enhancing underlayer for the free layer.
摘要翻译：可用作磁存储单元或磁阻传感器（例如用于磁记录的MTJ读头）的磁隧道结（MTJ）器件具有位于器件底部的自由铁磁层，底部自由层形成于特殊的底层 MTJ读头可以是磁通引导头，其使用自由层作为磁通引导件，用于将磁通量从磁介质引导到MTJ的感测区域。用于生长自由层的特殊底层是包含Mn，Pt，Ni，Ir和Os之一的合金，以及选自Ta，Al，Ti，Cu，Cr和V的添加剂X.没有添加剂，底层合金是反铁磁的。添加剂的存在量足以使合金不具有磁性排列，即它既不是反铁磁性的也不是铁磁性的，但是基本上不影响优选的晶体结构和晶胞尺寸，使得底层非常适合作为生长 - 增强自由层的底层。

3. 发明授权

US06671139B2 In-stack longitudinal bias structure for CIP spin valve sensors with bias layer electrically insulated from free layer 有权
标题翻译：用于具有与自由层电绝缘的偏置层的CIP自旋阀传感器的堆叠纵向偏置结构
公开(公告)号：US06671139B2
公开(公告)日：2003-12-30
申请号：US10066067
申请日：2002-01-31
申请人： Kashmira J. Carey , Jeffrey R. Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
发明人： Kashmira J. Carey , Jeffrey R. Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/012 , G11B5/3903 , G11B5/3932 , G11B2005/3996
摘要： A magnetization of a ferromagnetic free layer of a current-in-plane (CIP) sensor is stabilized using an in-stack longitudinal bias structure that includes a ferromagnetic bias layer and an anti-ferromagnetic bias layer. An electrically insulating layer separates the ferromagnetic free layer and the in-stack longitudinal bias structure, and thus the leads attached to the CIP sensor do not make direct electrical contact with the in-stack longitudinal bias structure. As a result, the sense current shunted by the in-stack longitudinal bias structure is prevented. Since a width along the off track direction of the in-stack longitudinal bias structure is greater than the track-width of the CIP sensor, the edge magnetostatic coupling filed acting on the ferromagnetic free layer from the track width edges of the in-stack longitudinal bias structure is reduced to approximately zero.
摘要翻译：使用包括铁磁偏置层和反铁磁偏置层的堆叠内纵向偏置结构来稳定电流平面（CIP）传感器的铁磁自由层的磁化。电绝缘层分离铁磁自由层和堆叠内纵向偏置结构，因此连接到CIP传感器的引线不与堆叠内纵向偏置结构直接电接触。结果，防止了由堆叠内纵向偏置结构分流的感测电流。由于沿着堆叠内纵向偏置结构的偏离轨道方向的宽度大于CIP传感器的轨道宽度，因此边缘静磁耦合场从堆叠纵向偏移结构的轨道宽度边缘起作用在铁磁自由层上偏置结构减少到大约零。

4. 发明授权

US07253991B2 Planar perpendicular recording head 有权
标题翻译：平面垂直记录头
公开(公告)号：US07253991B2
公开(公告)日：2007-08-07
申请号：US10836918
申请日：2004-04-30
申请人： Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
IPC分类号： G11B5/127 , G11B5/31
CPC分类号： G11B5/315 , G11B5/10 , G11B5/1278
摘要： A magnetic head (slider) for perpendicular recording which requires no lapping is described. The head is fabricated with an air bearing surface that is parallel to the wafer surface. The coil and pole pieces are formed from thin films disposed parallel to the air bearing surface. Standard lithographic techniques can be used to define the shapes, gaps and pole piece dimensions. Non-rectilinear shapes can be formed; for example, side shields that conform around the write pole piece region. The thickness of the main and return pole pieces are controlled by the deposition process rather than by lapping. The saw cuts used to separate the individual sliders from the rest of the wafer are perpendicular to the air-bearing surface and do not pass through any critical features.
摘要翻译：描述了不需要研磨的用于垂直记录的磁头（滑块）。该头部具有平行于晶片表面的空气轴承表面。线圈和极片由平行于空气轴承表面设置的薄膜形成。标准光刻技术可用于定义形状，间隙和极片尺寸。可以形成非直线形状; 例如，围绕写入极片区域的侧面屏蔽。主回极片和返回极片的厚度由沉积过程而不是研磨来控制。用于将各个滑块与其余的晶片分开的锯切板垂直于空气轴承表面，并且不通过任何关键特征。

5. 发明授权

US07463459B2 Self-pinned read sensor design with enhanced lead stabilizing mechanism 失效
标题翻译：自固定读取传感器设计，具有增强的引线稳定机制
公开(公告)号：US07463459B2
公开(公告)日：2008-12-09
申请号：US10781548
申请日：2004-02-18
申请人： Meng Ding , Robert E. Fontana, Jr. , Kuok San Ho , Neil Leslie Robertson , Ching Hwa Tsang
发明人： Meng Ding , Robert E. Fontana, Jr. , Kuok San Ho , Neil Leslie Robertson , Ching Hwa Tsang
IPC分类号： G11B5/39
CPC分类号： B82Y25/00 , G01R33/093 , G11B5/3912
摘要： A self pinned magnetoresistive sensor that has a relatively thick compressive material at either side to assist with self pinning. A shield having recessed portions at either side of the sensor area allows room for a thicker compressive layer than would otherwise be possible.
摘要翻译：自固定磁阻传感器，在任一侧具有相对较厚的压缩材料以辅助自锁。在传感器区域的任一侧具有凹入部分的屏蔽件允许比否则可能的空间更厚的压缩层。

6. 发明授权

US07414816B2 Planar magnetic thin film head 失效
标题翻译：平面磁性薄膜头
公开(公告)号：US07414816B2
公开(公告)日：2008-08-19
申请号：US10857776
申请日：2004-05-28
申请人： Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
发明人： Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
IPC分类号： G11B5/33 , G11B5/127 , G11B5/147
CPC分类号： G11B5/187 , G11B5/127
摘要： A magnetic head (slider) which requires no lapping is described. The head is fabricated with an air bearing surface that is parallel to the wafer surface. The saw cuts used to separate the individual sliders from the rest of the wafer are perpendicular to the air-bearing surface and do not pass through any critical features. The read and write components are formed from thin films disposed parallel to the air bearing surface and can be side-by-side or tandem in relation to the recording track. The stripe height of the read sensor is controlled by the deposition process rather than by lapping. Various embodiments of the read head include contiguous junction biasing, external hard magnet biasing, and in-stack biasing. In one embodiment a permeable field collector is included below the sensor layer structure. An aperture shield surrounding the sensor at the ABS is included in one embodiment.
摘要翻译：描述不需要研磨的磁头（滑块）。该头部具有平行于晶片表面的空气轴承表面。用于将各个滑块与其余的晶片分开的锯切板垂直于空气轴承表面，并且不通过任何关键特征。读取和写入部件由平行于空气支承表面设置的薄膜形成，并且可以相对于记录轨道并排或串联。读取传感器的条纹高度由沉积过程而不是研磨来控制。读头的各种实施例包括连续的结偏置，外部硬磁体偏压和叠层偏置。在一个实施例中，传感器层结构下面包括可渗透场收集器。在ABS的一个实施例中包括围绕传感器的孔罩。

7. 发明授权

US07324313B2 Read sensor having an in-stack biasing structure and an AP coupled free layer structure for increased magnetic stability 失效
标题翻译：具有堆叠偏压结构的读取传感器和用于提高磁稳定性的AP耦合自由层结构
公开(公告)号：US07324313B2
公开(公告)日：2008-01-29
申请号：US10955681
申请日：2004-09-30
申请人： Jeffrey Robinson Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
发明人： Jeffrey Robinson Childress , Robert E. Fontana, Jr. , Kuok San Ho , Ching Hwa Tsang
IPC分类号： G11B5/127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/313 , G11B5/3903 , G11B5/3909 , G11B5/3932
摘要： Current-perpendicular-to-the-plane (CPP), current-in-to-the-plane (CIP), and tunnel valve type sensors are provided having an antiparallel (AP) coupled free layer structure, an in-stack biasing structure which stabilizes the AP coupled free layer structure and a nonmagnetic spacer layer formed between the in-stack biasing layer and the AP coupled free layer structure. The AP coupled free layer structure has a first AP coupled free layer adjacent to the nonmagnetic spacer layer, a second AP coupled free layer, and an antiparallel coupling (APC) layer formed between the first and the second AP coupled free layers. The net moment of the AP coupled free layer structure has an antiparallel edge magnetostatic coupling with the in-stack biasing structure. At the same time, the first AP coupled free layer has an antiparallel exchange coupling with the second AP coupled free layer. By forming the second AP coupled free layer with a thickness greater than a thickness of the first AP coupled free layer, the AP coupled free layer structure has a net magnetic moment in the direction of the second AP coupled free layer moment. The non-magnetic spacer layer is chosen so that first AP coupled free layer has a parallel interlayer (Neel or Orange-peel or positive exchange) coupling with the in-stack biasing structure, so that the interlayer coupling adds to the edge magnetostatic coupling to increase a stability of the AP coupled free layer structure.
摘要翻译：提供了电流垂直于平面（CPP），电流平面（CIP）和隧道阀式传感器，其具有反平行（AP）耦合自由层结构，堆叠偏置结构其稳定AP耦合的自由层结构和形成在堆叠间偏压层和AP耦合自由层结构之间的非磁性间隔层。 AP耦合自由层结构具有邻近非磁性间隔层的第一AP耦合自由层，第二AP耦合自由层以及形成在第一和第二AP耦合自由层之间的反并联耦合（APC）层。 AP耦合自由层结构的净矩具有与堆叠偏压结构的反平行边缘静磁耦合。同时，第一AP耦合自由层与第二AP耦合自由层具有反平行交换耦合。通过形成厚度大于第一AP耦合自由层的厚度的第二AP耦合自由层，AP耦合自由层结构在第二AP耦合自由层时刻的方向上具有净磁矩。选择非磁性间隔层，使得第一AP耦合自由层具有与堆叠偏压结构耦合的平行中间层（Neel或橙色剥离或正交换），使得层间耦合增加了边缘静磁耦合增加AP耦合自由层结构的稳定性。

8. 发明授权

US07652855B2 Magnetic sensor with extended free layer and overlaid leads 有权
标题翻译：具有扩展自由层和重叠导线的磁性传感器
公开(公告)号：US07652855B2
公开(公告)日：2010-01-26
申请号：US11595186
申请日：2006-11-09
申请人： James Mac Freitag , David Eugene Heim , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Tsann Lin , Jyh-Shuey Lo , Mustafa Michael Pinarbasi , Ching Hwa Tsang
发明人： James Mac Freitag , David Eugene Heim , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Tsann Lin , Jyh-Shuey Lo , Mustafa Michael Pinarbasi , Ching Hwa Tsang
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A lead overlay design of a magnetic sensor is described with sensor and free layer dimensions such that the free layer is stabilized by the large demagnetization field due to the shape anisotropy. In one embodiment the giant magnetoresistive (GMR) effect under the leads is destroyed by removing the antiferromagnetic (AFM) and pinned layers above the free layer. The overlaid lead pads are deposited on the exposed spacer layer at the sides of the mask that defines the active region. In other embodiment a layer of electrically insulating material is deposited over the sensor to encapsulate it and thereby insulate it from contact with the hardbias structures. Various embodiments with self-aligned leads are also described. In a variation of the encapsulation embodiment, the insulating material is also deposited under the lead pads so the electrical current is channeled through the active region of the sensor and sidewall deposited lead pads.
摘要翻译：用传感器和自由层尺寸描述磁传感器的引线覆盖设计，使得由于形状各向异性，自由层由大的退磁场稳定。在一个实施例中，引线下的巨磁阻（GMR）效应通过去除自由层上方的反铁磁（AFM）和固定层而被破坏。覆盖的引线焊盘沉积在限定有源区的掩模侧面上的暴露间隔层上。在另一个实施例中，电绝缘材料层沉积在传感器上以将其封装并由此使其与硬质合金结构的接触绝缘。还描述了具有自对准引线的各种实施例。在封装实施例的变型中，绝缘材料也沉积在引线焊盘下方，使得电流通过传感器的有源区域和侧壁沉积的引线焊盘。

9. 发明授权

US07497008B2 Method of fabricating a thin film magnetic sensor on a wafer 失效
标题翻译：在晶片上制造薄膜磁传感器的方法
公开(公告)号：US07497008B2
公开(公告)日：2009-03-03
申请号：US11211877
申请日：2005-08-24
申请人： Tsung Yuan Chen , Frederick Hayes Dill , James Mac Freitag , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Mustafa Michael Pinarbasi , Ching Hwa Tsang , Patrick Rush Webb
发明人： Tsung Yuan Chen , Frederick Hayes Dill , James Mac Freitag , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Mustafa Michael Pinarbasi , Ching Hwa Tsang , Patrick Rush Webb
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3932 , G11B5/3929 , G11B5/398 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： An embodiment of the invention is a magnetic head with overlaid lead pads that contact the top surface of the sensor between the hardbias structures and do not contact the hardbias structures which are electrically insulated from direct contact with the sensor. The lead pad contact area on the top of the sensor is defined by sidewall deposition of a conductive material to form leads pads on a photoresist prior to formation of the remainder of the leads. The conductive material for the lead pads is deposited at a shallow angle to maximize the sidewall deposition on the photoresist, then ion-milled at a high angle to remove the conductive material from the field while leaving the sidewall material. An insulation layer is deposited on the lead material at a high angle, then milled at a shallow angle to remove insulation from the sidewall.
摘要翻译：本发明的一个实施例是具有覆盖的引线焊盘的磁头，该焊盘在硬质合金结构之间接触传感器的顶表面，并且不接触与传感器直接接触的电绝缘的硬质合金结构。传感器顶部的引线焊盘接触区域由导电材料的侧壁沉积限定，以在形成其余引线之前在光致抗蚀剂上形成引线焊盘。用于引线焊盘的导电材料以浅角度沉积，以使光致抗蚀剂上的侧壁沉积最大化，然后以高角度离子研磨，以从外界移除导电材料同时留下侧壁材料。绝缘层以高角度沉积在引线材料上，然后以浅角度铣削以除去与侧壁的绝缘。

10. 发明授权

US07768748B2 Magnetoresistive sensor with overlaid combined leads and shields 有权
标题翻译：具有重叠组合引线和屏蔽的磁阻传感器
公开(公告)号：US07768748B2
公开(公告)日：2010-08-03
申请号：US11638974
申请日：2006-12-14
申请人： Kuok San Ho , Edward Hin Pong Lee , David John Seagle , Ching Hwa Tsang
发明人： Kuok San Ho , Edward Hin Pong Lee , David John Seagle , Ching Hwa Tsang
IPC分类号： G11B5/33
CPC分类号： G11B5/3929 , B82Y25/00 , G01R33/093 , G11B5/3912 , G11B5/398
摘要： An improved magnetic head for a hard disk drive including a lead overlaid read head in which the read width and read gap are reduced. The read width, which corresponds to the distance between the inner ends of the overlaid electrical leads, is reduced by the fabrication of a thin read width insulation member prior to the fabrication of the overlaid electrical leads. The read gap is reduced by fabricating the overlaid electrical leads from a magnetic, electrically conductive material such as NiFe, whereby the overlaid electrical leads also function as a magnetic shield. The read gap, which is the distance between the first and second magnetic shields is thus reduced as compared to the prior art by the thickness of the electrical leads and the thickness of the prior art second insulation layer formed between the electrical leads and the second magnetic shield.
摘要翻译：一种用于硬盘驱动器的改进磁头，包括读出宽度和读取间隙减小的引线重叠读头。通过在制造覆盖的电引线之前制造薄的读宽度绝缘部件，减小对应于重叠的电引线的内端之间的距离的读宽度。通过从诸如NiFe的磁性导电材料制造覆盖的电引线来减小读取间隙，由此重叠的电引线也用作磁屏蔽。因此，与现有技术相比，通过电引线的厚度和形成在电引线和第二磁屏蔽之间的现有技术的第二绝缘层的厚度相比，第一和第二磁屏蔽之间的距离减小了读取间隙屏蔽。

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