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1. 发明授权

US07094130B2 Method for fabricating a magnetic transducer using a slurry with spherical particles for CMP-assisted photoresist lift-off 失效
标题翻译：使用具有用于CMP辅助光致抗蚀剂剥离的球形颗粒的浆料制造磁换能器的方法
公开(公告)号：US07094130B2
公开(公告)日：2006-08-22
申请号：US11222611
申请日：2005-09-09
申请人： Marie-Claire Cyrille , Frederick Hayes Dill , Jui-Lung Li
发明人： Marie-Claire Cyrille , Frederick Hayes Dill , Jui-Lung Li
IPC分类号： B24B1/00
CPC分类号： B82Y25/00 , B82Y40/00 , H01F41/308 , Y10T29/49032
摘要： A method is described which uses a CMP slurry with an abrasive of spherical particles to lift-off photoresist used in the patterning of the sensor for a magnetic transducer. The spherical particles, preferably less than 0.015 microns, are preferably silica, alumina, titania or zirconia with colloidal silica being preferred. An alternative method of fabricating a CPP sensor structure according to the invention deposits a dielectric or CMP resistant metal over the hard bias structure. The CMP-resistant metal is preferably selected from the group consisting of rhodium, chromium, vanadium and platinum. A CMP resistant mask deposited over the dielectric or CMP-resistant metal can include an optional adhesion layer such as tantalum followed by a DLC layer. The CMP-assisted lift-off of the photoresist and the excess materials is executed at this point. The photoresist used to protect the selected area of the sensor structure is lifted-off using the slurry.
摘要翻译：描述了一种方法，其使用具有球形颗粒磨料的CMP浆料来剥离用于磁传感器的传感器的图案化中使用的光致抗蚀剂。优选小于0.015微米的球形颗粒优选是二氧化硅，氧化铝，二氧化钛或具有胶体二氧化硅的氧化锆。根据本发明制备CPP传感器结构的替代方法是在硬偏压结构上沉积电介质或耐CMP的金属。耐CMP的金属优选选自铑，铬，钒和铂。沉积在电介质或耐CMP金属上的CMP抗蚀掩模可以包括任选的粘合层，例如钽，然后是DLC层。此时执行CMP辅助的光致抗蚀剂和多余材料的剥离。用于保护传感器结构的选定区域的光致抗蚀剂使用浆料被剥离。

2. 发明授权

US06977800B2 Magnetic read head with dual layer lead 失效
标题翻译：带双层引线的磁头
公开(公告)号：US06977800B2
公开(公告)日：2005-12-20
申请号：US10629513
申请日：2003-07-29
申请人： Marie-Claire Cyrille , Frederick Hayes Dill , Kuok San Ho , Jui-Lung Li , Scott Arthur MacDonald , James L. Nix , Ching Hwa Tsang
发明人： Marie-Claire Cyrille , Frederick Hayes Dill , Kuok San Ho , Jui-Lung Li , Scott Arthur MacDonald , James L. Nix , Ching Hwa Tsang
IPC分类号： G11B5/31 , G11B5/33
CPC分类号： G11B5/313 , Y10T29/49048
摘要： A read head has a bottom lead made of material that is relatively polish resistant and a top lead layer that polishes down more easily than the bottom layer. With this structure, when the layers are deposited and then polished down, the top layer recesses away from the sensor (and bottom lead layer) in a controlled fashion, providing an acceptable lead structure that reduces the mismatch between the read head physical read width and magnetic read width.
摘要翻译：读头具有由相对耐光的材料制成的底部引线和比底层更容易抛光的顶部引线层。利用这种结构，当层沉积然后被抛光时，顶层以受控的方式远离传感器（和底部引线层），提供可接受的引线结构，其减小了读取头物理读取宽度和磁读宽度。

3. 发明授权

US6023395A Magnetic tunnel junction magnetoresistive sensor with in-stack biasing 失效
标题翻译：具有堆叠偏置的磁隧道结磁阻传感器
公开(公告)号：US6023395A
公开(公告)日：2000-02-08
申请号：US87334
申请日：1998-05-29
申请人： Frederick Hayes Dill , Robert Edward Fontana, Jr. , Tsann Lin , Stuart Stephen Papworth Parkin , Ching Hwa Tsang
发明人： Frederick Hayes Dill , Robert Edward Fontana, Jr. , Tsann Lin , Stuart Stephen Papworth Parkin , Ching Hwa Tsang
IPC分类号： G01R33/09 , G11B5/39
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/098 , G11B5/3903 , G11B2005/3996
摘要： A magnetic tunnel junction (MTJ) magnetoresistive (MR) read head has one fixed ferromagnetic layer and one sensing ferromagnetic layer on opposite sides of the tunnel barrier layer, and with a biasing ferromagnetic layer in the MTJ stack of layers that is magnetostatically coupled with the sensing ferromagnetic layer to provide either longitudinal bias or transverse bias or a combination of longitudinal and transverse bias fields to the sensing ferromagnetic layer. The magnetic tunnel junction in the MTJ MR head is formed on an electrical lead on a substrate and is made up of a stack of layers. The layers in the stack are an antiferromagnetic layer, a fixed ferromagnetic layer exchange biased with the antiferromagnetic layer so that its magnetic moment cannot rotate in the presence of an applied magnetic field, an insulating tunnel barrier layer in contact with the fixed ferromagnetic layer, a sensing ferromagnetic layer in contact with the tunnel barrier layer and whose magnetic moment is free to rotate in the presence of an applied magnetic field, a biasing ferromagnetic layer that has its magnetic moment aligned generally within the plane of the device and a nonmagnetic electrically conductive spacer layer separating the biasing ferromagnetic layer from the other layers in the stack. The self field or demagnetizing field from the biasing ferromagnetic layer magnetostatically couples with the edges of the sensing ferromagnetic layer to stabilize its magnetic moment, and, to linearize the output of the device. The electrically conductive spacer layer prevents direct ferromagnetic coupling between the biasing ferromagnetic layer and the other layers in the stack and allows sense current to flow perpendicularly through the layers in the MTJ stack.
摘要翻译：磁隧道结（MTJ）磁阻（MR）读头在隧道势垒层的相对侧上具有一个固定的铁磁层和一个感测铁磁层，并且在与静电耦合的MTJ堆叠层中具有偏置铁磁层感测铁磁层以向感测铁磁层提供纵向偏置或横向偏置或纵向和横向偏置场的组合。 MTJ MR头中的磁性隧道结形成在基板上的电引线上，并且由一叠层组成。堆叠中的层是反铁磁层，固定的铁磁层与反铁磁层交替偏置，使得其在施加的磁场存在的情况下不能旋转，与固定铁磁层接触的绝缘隧道势垒层，感测与隧道势垒层接触的铁磁层，并且其磁矩在施加的磁场存在的情况下自由旋转，偏磁铁磁层的磁矩大致在器件的平面内，非磁性导电间隔物将偏置铁磁层与堆叠中的其它层分离。来自偏置铁磁层的自场或去磁场与感测铁磁层的边缘静磁耦合以稳定其磁矩，并且使器件的输出线性化。导电间隔层防止偏置铁磁层与堆叠中的其他层之间的直接铁磁耦合，并且允许感测电流垂直地流过MTJ堆叠中的层。

4. 发明授权

US5898548A Shielded magnetic tunnel junction magnetoresistive read head 失效
标题翻译：屏蔽磁隧道结磁阻读头
公开(公告)号：US5898548A
公开(公告)日：1999-04-27
申请号：US957787
申请日：1997-10-24
申请人： Frederick Hayes Dill , Robert Edward Fontana, Jr. , Stuart Stephen Papworth Parkin , Ching Hwa Tsang
发明人： Frederick Hayes Dill , Robert Edward Fontana, Jr. , Stuart Stephen Papworth Parkin , Ching Hwa Tsang
IPC分类号： G11B5/39 , G11B5/33 , H01F10/16 , H01F10/32 , H01L43/08
CPC分类号： G11B5/332 , G11B5/33 , G11B5/3909 , G11B5/3912
摘要： A magnetic tunnel junction (MTJ) magnetoresistive read head for a magnetic recording system has the MTJ device located between two spaced-apart magnetic shields. The magnetic shields, which allow the head to detect individual magnetic transitions from the magnetic recording medium without interference from neighboring transitions, also function as electrical leads for connection of the head to sense circuitry. Electrically conductive spacer layers are located at the top and bottom of the MTJ device and connect the MTJ device to the shields. The thickness of the spacer layers is selected to optimize the spacing between the shields, which is a parameter that controls the linear resolution of the data that can be read from the magnetic recording medium. To reduce the likelihood of electrical shorting between the shields if the shield-to-shield spacing is too small, each of the shields can have a pedestal region with the MTJ device located between the two pedestals, so that the shield-to-shield spacing outside the pedestal regions is greater than in the pedestal regions.
摘要翻译：用于磁记录系统的磁性隧道结（MTJ）磁阻读取头具有位于两个间隔开的磁屏蔽之间的MTJ器件。允许头部从磁记录介质检测各个磁转变而不受相邻转变的干扰的磁屏蔽也用作用于将头连接到感测电路的电引线。导电间隔层位于MTJ设备的顶部和底部，并将MTJ设备连接到屏蔽。选择间隔层的厚度以优化屏蔽之间的间隔，这是控制可从磁记录介质读取的数据的线性分辨率的参数。为了减少屏蔽间隔太小的屏蔽之间的电气短路的可能性，每个屏蔽件可以具有基座区域，MTJ装置位于两个基座之间，使得屏蔽与屏蔽间隔在基座区域外部大于基座区域。

5. 发明授权

US07323112B2 Method of fabricating electronic component using resist structure with no undercut 有权
标题翻译：使用没有底切的抗蚀剂结构制造电子元件的方法
公开(公告)号：US07323112B2
公开(公告)日：2008-01-29
申请号：US10652053
申请日：2003-08-29
申请人： Amanda Baer , Marie-Claire Cyrille , Frederick Hayes Dill , Wipul Pemsiri Jayaekara , Jui-Lung Li , Hugo Alberto Emilio Santini , Benjamin Lu Chen Wang
发明人： Amanda Baer , Marie-Claire Cyrille , Frederick Hayes Dill , Wipul Pemsiri Jayaekara , Jui-Lung Li , Hugo Alberto Emilio Santini , Benjamin Lu Chen Wang
IPC分类号： B44C1/22
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3116 , G11B5/3163 , G11B5/3903 , G11B5/3909 , G11B5/3967 , G11B2005/3996 , H01J2237/3114
摘要： A method for milling a structure. A single- or multi-layer resist having no undercut is added to a surface of a structure to be milled, the surface to be milled defining a plane. A milling process, such as ion milling, is performed. The milling process includes milling the structure at high incidence and milling the structure at razing incidence. The milling process can be performed only once, or repeated multiple times. High incidence can be defined as about 65 to about 90 degrees from the plane of the surface being milled. Razing incidence can be defined as about 0 to about 30 degrees from the plane of the surface being milled.
摘要翻译：一种铣削结构的方法。将未切割的单层或多层抗蚀剂加入要研磨的结构的表面，待研磨的表面限定一个平面。进行铣削加工，例如离子铣削。铣削过程包括以高发射率铣削结构并铣削结构。铣削加工只能执行一次，或重复多次。可以将高入射率定义为从被研磨表面的平面约65度至约90度。闪电发生率可以定义为距被研磨表面的平面约0至约30度。

6. 发明授权

US07291279B2 Method of making a read sensor while protecting it from electrostatic discharge (ESD) damage 失效
标题翻译：制造读取传感器同时防止静电放电（ESD）损坏的方法
公开(公告)号：US07291279B2
公开(公告)日：2007-11-06
申请号：US10835807
申请日：2004-04-30
申请人： Frederick Hayes Dill , Meng Ding , Kuok San Ho , Jordan Asher Katine , Scott Arthur MacDonald , Huey-Ming Tzeng
发明人： Frederick Hayes Dill , Meng Ding , Kuok San Ho , Jordan Asher Katine , Scott Arthur MacDonald , Huey-Ming Tzeng
IPC分类号： B44C1/22 , H01L21/00 , G11B5/33 , G11B5/127
CPC分类号： G11B5/3906 , G11B5/3163 , G11B5/40 , Y10T29/49021 , Y10T29/49043 , Y10T29/49048
摘要： A method of making a read sensor while protecting it from electrostatic discharge (ESD) damage involves forming a severable shunt during the formation of the read sensor. The method may include forming a resist layer over a plurality of read sensor layers; performing lithography with use of a mask to form the resist layer into a patterned resist which exposes left and right side regions over the read sensor layers as well as a shunt region; etching, with the patterned resist in place, to remove materials in the left and right side regions and in the shunt region; and depositing, with the patterned resist in place, left and right hard bias and lead layers in the left and right side regions, respectively, and in the shunt region for forming a severable shunt which electrically couples the left and right hard bias and lead layers together for ESD protection.
摘要翻译：制造读取传感器同时防止静电放电（ESD）损坏的方法包括在形成读取的传感器期间形成可分离的分流。该方法可以包括在多个读取传感器层上形成抗蚀剂层; 使用掩模执行光刻以将抗蚀剂层形成图案化的抗蚀剂，其在读取的传感器层以及分流区域上暴露左侧区域和右侧区域; 蚀刻，图案化抗蚀剂就位，以去除左右侧区域和分流区域中的材料; 并且分别在左侧区域和右侧区域以及分流区域中分别将图案化的抗蚀剂沉积在左侧和右侧的硬偏压和引线层，以形成可分离的分流器，其将左右硬偏压和引线层电耦合一起为ESD保护。

7. 发明授权

US07248434B2 Planarized perpendicular pole tip system and method for manufacturing the same 失效
标题翻译：平面垂直极端系统及其制造方法
公开(公告)号：US07248434B2
公开(公告)日：2007-07-24
申请号：US10798163
申请日：2004-03-10
申请人： Frederick Hayes Dill , Jeffrey S. Lille , Son Van Nguyen , Hugo Alberto Emilio Santini
发明人： Frederick Hayes Dill , Jeffrey S. Lille , Son Van Nguyen , Hugo Alberto Emilio Santini
IPC分类号： G11B5/147
CPC分类号： G11B5/3116 , G11B5/1278 , G11B5/3163 , G11B5/3967 , Y10T29/49032
摘要： A method for manufacturing a pole tip structure for a magnetic head is provided. An etch stop layer is initially deposited after which a transfer layer is deposited. Further deposited is at least one masking layer. Reactive ion etching is then performed to define a trench in at least the transfer layer. A pole tip layer is then deposited in the trench to define a pole tip structure flanked at least in part by the transfer layer. A surface of the transfer layer or etch stop layer then remains in co-planar relationship with a surface of the pole tip structure.
摘要翻译：提供一种用于制造用于磁头的极尖结构的方法。最初沉积蚀刻停止层，之后沉积转移层。进一步沉积的是至少一个掩模层。然后执行反应离子蚀刻以在至少转移层中限定沟槽。然后将极尖层沉积在沟槽中以限定至少部分地由转移层侧面的极尖结构。然后转印层或蚀刻停止层的表面与极尖结构的表面保持共面关系。

8. 发明授权

US07237321B2 Method for fabricating a CPP magnetic transducer using CMP-assisted lift-off and a CMP-resistant metal layer 失效
标题翻译：使用CMP辅助剥离和耐CMP的金属层制造CPP磁换能器的方法
公开(公告)号：US07237321B2
公开(公告)日：2007-07-03
申请号：US10909121
申请日：2004-07-30
申请人： Marie-Claire Cyrille , Frederick Hayes Dill , Jui-Lung Li
发明人： Marie-Claire Cyrille , Frederick Hayes Dill , Jui-Lung Li
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3163 , G11B5/3903 , G11B5/3909 , Y10T29/49032 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method is described which uses a CMP resistant metal layer to replace the upper dielectric layer in the track width definition phase of a TMR or CPP spin valve magnetic head. The metal which is selected to be resistant to the CMP process can be rhodium (Rh), platinum (Pt), chromium (Cr), vanadium (V), etc. The additional CMP resistance of the refill layer structure provides a much larger processing window which results in higher yields. A CPP head according to the invention has a metal layer according to the invention above the hard bias structures on the sides of the sensor which define the track width.
摘要翻译：描述了一种使用CMP抗蚀金属层代替TMR或CPP自旋阀磁头的磁道宽度清晰度相位中的上介质层的方法。选择耐CMP工艺的金属可以是铑（Rh），铂（Pt），铬（Cr），钒（V）等。补充层结构的附加CMP电阻提供了更大的加工这导致更高的产量。根据本发明的CPP头在传感器侧面上的硬偏压结构上方具有根据本发明的金属层，其限定轨道宽度。

9. 发明授权

US06819527B1 Magnetic head with lower coil traces connected to integrally formed vertical interconnects and upper coil traces through plural insulating layer arrangement 失效
标题翻译：具有连接到整体形成的垂直互连的下线圈迹线和通过多个绝缘层布置的上线圈迹线的磁头
公开(公告)号：US06819527B1
公开(公告)日：2004-11-16
申请号：US09535089
申请日：2000-03-23
申请人： Frederick Hayes Dill , Robert Edward Fontana, Jr. , Richard Hsiao , Hugo Alberto Emilio Santini
发明人： Frederick Hayes Dill , Robert Edward Fontana, Jr. , Richard Hsiao , Hugo Alberto Emilio Santini
IPC分类号： G11B517
CPC分类号： G11B5/313 , G11B5/012 , G11B5/127 , G11B5/17 , G11B5/3163 , Y10T29/49046
摘要： A magnetic head having a helical induction coil. The helical coil is fabricated around a magnetic pole yoke in a series of process steps that include a reactive ion etch (RIE) process step which is utilized to simultaneously form vertical interconnect vias and upper helical coil member trenches. Thereafter, in a single fabrication step, such as by electroplating, the vertical interconnect lines and the upper helical coil traces are created in a single fabrication step, such that they are integrally formed. The vertical interconnect lines provide an electrical connection between outer ends of previously formed lower helical coil traces and outer ends of the integrally formed upper helical coil traces, such that a helical coil is fabricated. In the preferred embodiment, the helical coil is composed of copper.
摘要翻译：具有螺旋感应线圈的磁头。在包括反应离子蚀刻（RIE）工艺步骤的一系列工艺步骤中围绕磁极轭制造螺旋线圈，其用于同时形成垂直互连通孔和上部螺旋线圈构件沟槽。此后，在单个制造步骤中，例如通过电镀，在单个制造步骤中产生垂直互连线和上部螺旋线圈迹线，使得它们整体形成。垂直互连线在先前形成的下螺旋线圈迹线的外端和整体形成的上螺旋线圈迹线的外端之间提供电连接，从而制造螺旋线圈。在优选实施例中，螺旋线圈由铜构成。

10. 发明授权

US6114719A Magnetic tunnel junction memory cell with in-stack biasing of the free ferromagnetic layer and memory array using the cell 失效
标题翻译：磁性隧道结存储单元，其具有自由铁磁层的堆叠偏置和使用该单元的存储器阵列
公开(公告)号：US6114719A
公开(公告)日：2000-09-05
申请号：US87553
申请日：1998-05-29
申请人： Frederick Hayes Dill , Robert Edward Fontana, Jr. , Tsann Linn , Stuart Stephen Papworth Parkin , Ching Hwa Tsang
发明人： Frederick Hayes Dill , Robert Edward Fontana, Jr. , Tsann Linn , Stuart Stephen Papworth Parkin , Ching Hwa Tsang
IPC分类号： G11C11/15 , H01L29/76
CPC分类号： H01L43/08 , G11C11/16 , H01L27/224
摘要： A magnetic tunnel junction (MTJ) memory cell uses a biasing ferromagnetic layer in the MTJ stack of layers that is magnetostatically coupled with the free ferromagnetic layer in the MTJ stack to provide transverse and/or longitudinal bias fields to the free ferromagnetic layer. The MTJ is formed on an electrical lead on a substrate and is made up of a stack of layers. The layers in the MTJ stack are an antiferromagnetic layer, a fixed ferromagnetic layer exchange biased with the antiferromagnetic layer so that its magnetic moment cannot rotate in the presence of an applied magnetic field, an insulating tunnel barrier layer in contact with the fixed ferromagnetic layer, a free ferromagnetic layer in contact with the tunnel barrier layer and whose magnetic moment is free to rotate in the presence of an applied magnetic field, and whose moment, in the absence of any applied field, is generally either parallel or antiparallel to that of the fixed ferromagnetic layer, a biasing ferromagnetic layer that has its magnetic moment aligned generally in the plane of the MTJ, and a nonferromagnetic electrically conductive spacer layer separating the biasing ferromagnetic layer from the other layers in the stack. The self field or demagnetizing field from the biasing layer magnetostatically couples with the edges of the free layer so as to provide a transverse bias field, which results in a coherent rotation of the moment of the free layer, and/or a longitudinal bias field, which assures that the two states of the memory cell are equally stable with respect to magnetic field excursions.
摘要翻译：磁性隧道结（MTJ）存储单元使用与MTJ堆叠中的自由铁磁层磁静电耦合的MTJ堆叠层中的偏置铁磁层，以向自由铁磁层提供横向和/或纵向偏置场。 MTJ形成在基板上的电引线上，并且由一叠层组成。 MTJ堆叠中的层是反铁磁层，固定的铁磁层与反铁磁层交替偏置，使得其在施加的磁场存在的情况下不能旋转，与固定铁磁层接触的绝缘隧道势垒层，与隧道势垒层接触的自由铁磁层，其磁矩在施加的磁场的存在下自由旋转，并且其在没有任何施加磁场的情况下的时刻通常是平行或反平行的固定铁磁层，其磁矩大致在MTJ的平面内的偏置铁磁层，以及将偏置铁磁层与堆叠中的其它层分离的非铁磁导电间隔层。来自偏置层的自场或去磁场与自由层的边缘静磁耦合，以便提供横向偏置场，这导致自由层的力矩和/或纵向偏置场的相干旋转，这确保了存储器单元的两个状态相对于磁场偏移同样稳定。

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