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1. 发明授权

US07652855B2 Magnetic sensor with extended free layer and overlaid leads 有权
标题翻译：具有扩展自由层和重叠导线的磁性传感器
公开(公告)号：US07652855B2
公开(公告)日：2010-01-26
申请号：US11595186
申请日：2006-11-09
申请人： James Mac Freitag , David Eugene Heim , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Tsann Lin , Jyh-Shuey Lo , Mustafa Michael Pinarbasi , Ching Hwa Tsang
发明人： James Mac Freitag , David Eugene Heim , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Tsann Lin , Jyh-Shuey Lo , Mustafa Michael Pinarbasi , Ching Hwa Tsang
IPC分类号： G11B5/39
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A lead overlay design of a magnetic sensor is described with sensor and free layer dimensions such that the free layer is stabilized by the large demagnetization field due to the shape anisotropy. In one embodiment the giant magnetoresistive (GMR) effect under the leads is destroyed by removing the antiferromagnetic (AFM) and pinned layers above the free layer. The overlaid lead pads are deposited on the exposed spacer layer at the sides of the mask that defines the active region. In other embodiment a layer of electrically insulating material is deposited over the sensor to encapsulate it and thereby insulate it from contact with the hardbias structures. Various embodiments with self-aligned leads are also described. In a variation of the encapsulation embodiment, the insulating material is also deposited under the lead pads so the electrical current is channeled through the active region of the sensor and sidewall deposited lead pads.
摘要翻译：用传感器和自由层尺寸描述磁传感器的引线覆盖设计，使得由于形状各向异性，自由层由大的退磁场稳定。在一个实施例中，引线下的巨磁阻（GMR）效应通过去除自由层上方的反铁磁（AFM）和固定层而被破坏。覆盖的引线焊盘沉积在限定有源区的掩模侧面上的暴露间隔层上。在另一个实施例中，电绝缘材料层沉积在传感器上以将其封装并由此使其与硬质合金结构的接触绝缘。还描述了具有自对准引线的各种实施例。在封装实施例的变型中，绝缘材料也沉积在引线焊盘下方，使得电流通过传感器的有源区域和侧壁沉积的引线焊盘。

2. 发明申请

US20080112090A1 Magnetic recording head with overlaid leads 有权
标题翻译：带重叠导线的磁记录头
公开(公告)号：US20080112090A1
公开(公告)日：2008-05-15
申请号：US11595186
申请日：2006-11-09
申请人： James Mac Freitag , David Eugene Heim , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Tsann Lin , Jyh-Shuey Lo , Mustafa Michael Pinarbasi , Ching Hwa Tsang
发明人： James Mac Freitag , David Eugene Heim , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Tsann Lin , Jyh-Shuey Lo , Mustafa Michael Pinarbasi , Ching Hwa Tsang
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , B82Y10/00 , B82Y25/00 , G11B2005/3996
摘要： A lead overlay design of a magnetic sensor is described with sensor and free layer dimensions such that the free layer is stabilized by the large demagnetization field due to the shape anisotropy. In one embodiment the giant magnetoresistive (GMR) effect under the leads is destroyed by removing the antiferromagnetic (AFM) and pinned layers above the free layer. The overlaid lead pads are deposited on the exposed spacer layer at the sides of the mask that defines the active region. In other embodiment a layer of electrically insulating material is deposited over the sensor to encapsulate it and thereby insulate it from contact with the hardbias structures. Various embodiments with self-aligned leads are also described. In a variation of the encapsulation embodiment, the insulating material is also deposited under the lead pads so the electrical current is channeled through the active region of the sensor and sidewall deposited lead pads.
摘要翻译：用传感器和自由层尺寸描述磁传感器的引线覆盖设计，使得由于形状各向异性，自由层由大的退磁场稳定。在一个实施例中，引线下的巨磁阻（GMR）效应通过去除自由层上方的反铁磁（AFM）和固定层而被破坏。覆盖的引线焊盘沉积在限定有源区的掩模侧面上的暴露间隔层上。在另一个实施例中，电绝缘材料层沉积在传感器上以将其封装并由此使其与硬质合金结构的接触绝缘。还描述了具有自对准引线的各种实施例。在封装实施例的变型中，绝缘材料也沉积在引线焊盘下方，使得电流通过传感器的有源区域和侧壁沉积的引线焊盘。

3. 发明授权

US07497008B2 Method of fabricating a thin film magnetic sensor on a wafer 失效
标题翻译：在晶片上制造薄膜磁传感器的方法
公开(公告)号：US07497008B2
公开(公告)日：2009-03-03
申请号：US11211877
申请日：2005-08-24
申请人： Tsung Yuan Chen , Frederick Hayes Dill , James Mac Freitag , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Mustafa Michael Pinarbasi , Ching Hwa Tsang , Patrick Rush Webb
发明人： Tsung Yuan Chen , Frederick Hayes Dill , James Mac Freitag , Kuok San Ho , Wipul Pemsiri Jayasekara , Kim Y. Lee , Mustafa Michael Pinarbasi , Ching Hwa Tsang , Patrick Rush Webb
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3932 , G11B5/3929 , G11B5/398 , Y10T29/49032 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： An embodiment of the invention is a magnetic head with overlaid lead pads that contact the top surface of the sensor between the hardbias structures and do not contact the hardbias structures which are electrically insulated from direct contact with the sensor. The lead pad contact area on the top of the sensor is defined by sidewall deposition of a conductive material to form leads pads on a photoresist prior to formation of the remainder of the leads. The conductive material for the lead pads is deposited at a shallow angle to maximize the sidewall deposition on the photoresist, then ion-milled at a high angle to remove the conductive material from the field while leaving the sidewall material. An insulation layer is deposited on the lead material at a high angle, then milled at a shallow angle to remove insulation from the sidewall.
摘要翻译：本发明的一个实施例是具有覆盖的引线焊盘的磁头，该焊盘在硬质合金结构之间接触传感器的顶表面，并且不接触与传感器直接接触的电绝缘的硬质合金结构。传感器顶部的引线焊盘接触区域由导电材料的侧壁沉积限定，以在形成其余引线之前在光致抗蚀剂上形成引线焊盘。用于引线焊盘的导电材料以浅角度沉积，以使光致抗蚀剂上的侧壁沉积最大化，然后以高角度离子研磨，以从外界移除导电材料同时留下侧壁材料。绝缘层以高角度沉积在引线材料上，然后以浅角度铣削以除去与侧壁的绝缘。

4. 发明申请

US20080151441A1 MAGNETORESISTIVE SENSOR HAVING AN ANISOTROPIC HARD BIAS WITH HIGH COERCIVITY 有权
标题翻译：具有高可靠性的ANISOTROPIC硬偏差磁传感器
公开(公告)号：US20080151441A1
公开(公告)日：2008-06-26
申请号：US11615825
申请日：2006-12-22
申请人： James Mac Freitag , Mustafa Michael Pinarbasi , Wipul Pemsiri Jayasekara
发明人： James Mac Freitag , Mustafa Michael Pinarbasi , Wipul Pemsiri Jayasekara
IPC分类号： G11B5/33 , B05D5/12
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932
摘要： A magnetoresistive sensor having magnetically anisotropic bias layers for biasing the free layer of the sensor. The sensor includes a sensor stack with a pinned layer structure and a free layer structure and having first and second sides. Hard bias structures for biasing the magnetization of the free layer are formed at either side of the sensor stack, and each of the hard bias structure includes a hard magnetic layer that has a magnetic anisotropy to enhance the stability of the biasing. The hard bias structure can include a Cr under-layer having a surface that has been treated by a low power angled ion milling to form it with an anisotropic surface texture. A layer of Cr—Mo alloy is formed over the Cr under-layer and the hard magnetic material layer is formed over the Cr—Mo alloy layer. The anisotropic surface texture of the Cr layer induces an aligned crystalline structure in the hard magnetic layer that causes the hard magnetic layer to have a magnetic anisotropy. In another embodiment, the hard bias structure can include a layer of Ta that has a surface formed with the anisotropic roughness. A layer of Cr—Mo alloy is formed over the Ta layer and the hard magnetic layer is formed over the Cr—Mo alloy layer. In yet another embodiment, the hard bias structure includes first and second Ta layers with a Si layer sandwiched between them. The second Ta layer has a surface treated with the anisotropic texture. A layer of Cr—Mo alloy can then be formed over the second Ta layer and the hard magnetic material formed over the Cr—Mo alloy layer.
摘要翻译：具有用于偏置传感器自由层的磁各向异性偏置层的磁阻传感器。传感器包括具有钉扎层结构和自由层结构并具有第一和第二侧面的传感器堆叠。在传感器堆叠的任一侧形成用于偏置自由层的磁化的硬偏置结构，并且每个硬偏置结构都包括具有磁各向异性以增强偏置稳定性的硬磁性层。硬偏压结构可以包括具有通过低功率角度离子铣削处理以形成各向异性表面纹理的表面的Cr底层。在Cr底层上形成Cr-Mo合金层，在Cr-Mo合金层上形成硬磁性体层。 Cr层的各向异性表面结构在硬磁性层中引起对准的结晶结构，使得硬磁性层具有磁各向异性。在另一个实施例中，硬偏压结构可以包括具有由各向异性粗糙度形成的表面的Ta层。在Ta层上形成一层Cr-Mo合金，在Cr-Mo合金层上形成硬磁性层。在另一个实施例中，硬偏置结构包括夹在它们之间的Si层的第一和第二Ta层。第二Ta层具有用各向异性结构处理的表面。然后可以在第二Ta层上形成Cr-Mo合金层，并在Cr-Mo合金层上形成硬磁性材料。

5. 发明授权

US08266785B2 Method for manufacturing a magnetoresistive sensor having a novel junction structure for improved track width definition and pinned layer stability 失效
标题翻译：一种用于制造具有新颖的结结构的磁阻传感器的方法，用于改善轨道宽度的定义和固定层的稳定性
公开(公告)号：US08266785B2
公开(公告)日：2012-09-18
申请号：US11938690
申请日：2007-11-12
申请人： James Mac Freitag , Wipul Pemsiri Jayasekara , Mustafa Michael Pinarbasi
发明人： James Mac Freitag , Wipul Pemsiri Jayasekara , Mustafa Michael Pinarbasi
IPC分类号： G11B5/187 , B44C1/22
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3903 , G11B5/398 , G11B2005/0016 , Y10T29/49041 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A method for manufacturing a magnetoresistive sensor having improved pinned layer stability at small track widths. The method includes providing a substrate, and depositing a plurality of sensor layers. A layer of material that is resistant to removal by chemical mechanical polishing (CMP stop layer) and an antireflective coating layer are deposited. A photoresist mask is formed on the antireflective layer, and a reactive ion etch (RIE) is performed to remove portions of the ion mill resistant mask that are not covered by the photoresist mask, the RIE being performed in a plasma chamber having a platen, the performing the RIE further comprising applying a platen power of at least 70 W. An ion milling is performed to remove a portion of the sensor layers, the ion milling being terminating before all of the sensor materials have been removed.
摘要翻译：一种用于制造磁阻传感器的方法，其具有在小轨道宽度下具有改进的钉扎层稳定性。该方法包括提供衬底和沉积多个传感器层。沉积耐化学机械抛光（CMP停止层）和抗反射涂层去除的材料层。在抗反射层上形成光致抗蚀剂掩模，并且执行反应离子蚀刻（RIE）以除去未被光致抗蚀剂掩模覆盖的部分耐离子磨损掩模，RIE在具有压板的等离子体室中进行，执行RIE还包括施加至少70W的压板功率。执行离子铣削以去除传感器层的一部分，离子铣削在所有传感器材料已经被去除之前终止。

6. 发明授权

US07848065B2 Magnetoresistive sensor having an anisotropic hard bias with high coercivity 有权
标题翻译：具有高矫顽力的各向异性硬偏置的磁阻传感器
公开(公告)号：US07848065B2
公开(公告)日：2010-12-07
申请号：US11615825
申请日：2006-12-22
申请人： James Mac Freitag , Mustafa Michael Pinarbasi , Wipul Pemsiri Jayasekara
发明人： James Mac Freitag , Mustafa Michael Pinarbasi , Wipul Pemsiri Jayasekara
IPC分类号： G11B5/39
CPC分类号： G11B5/398 , B82Y25/00 , G01R33/093 , G11B5/3932
摘要： A magnetoresistive sensor having magnetically anisotropic bias layers for biasing the free layer of the sensor. Hard bias structures for biasing the magnetization of the free layer are formed at either side of the sensor stack, and each of the hard bias structure includes a hard magnetic layer that has a magnetic anisotropy to enhance the stability of the biasing. The hard bias structure can include a Cr under-layer having a surface that has been treated by a low power angled ion milling to form it with an anisotropic surface texture. A layer of Cr—Mo alloy is formed over the Cr under-layer and the hard magnetic material layer is formed over the Cr—Mo alloy layer. The anisotropic surface texture of the Cr layer induces an aligned crystalline structure in the hard magnetic layer that causes the hard magnetic layer to have a magnetic anisotropy.
摘要翻译：具有用于偏置传感器自由层的磁各向异性偏置层的磁阻传感器。在传感器堆叠的任一侧形成用于偏置自由层的磁化的硬偏置结构，并且每个硬偏置结构都包括具有磁各向异性以增强偏置稳定性的硬磁性层。硬偏压结构可以包括具有通过低功率角度离子铣削处理以形成各向异性表面纹理的表面的Cr底层。在Cr底层上形成Cr-Mo合金层，在Cr-Mo合金层上形成硬磁性体层。 Cr层的各向异性表面结构在硬磁性层中引起对准的结晶结构，使得硬磁性层具有磁各向异性。

7. 发明授权

US08037593B2 Method for manufacturing an ultra narrow gap magnetoresistive sensor 有权
标题翻译：制造超窄间隙磁阻传感器的方法
公开(公告)号：US08037593B2
公开(公告)日：2011-10-18
申请号：US11966106
申请日：2007-12-28
申请人： Kuok San Ho , Ying Hong , Wipul Pemsiri Jayasekara , Daniele Mauri
发明人： Kuok San Ho , Ying Hong , Wipul Pemsiri Jayasekara , Daniele Mauri
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3163 , B82Y25/00 , G01R33/093 , G11B5/398 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A method for manufacturing a magnetoresistive sensor that decreases the stack height of the sensor. The method includes forming a sensor structure having at its top, a Ru layer and a Ta layer over the Ru layer. An annealing process is performed to set the magnetization of the pinned layer of the sensor structure. After the annealing process has been completed and the Ta layer is no longer needed, an ion milling process is performed to remove the Ta layer.
摘要翻译：一种降低传感器堆叠高度的磁阻传感器的制造方法。该方法包括形成传感器结构，其顶部具有在Ru层上的Ru层和Ta层。执行退火处理以设置传感器结构的钉扎层的磁化。在完成退火处理并且不再需要Ta层之后，执行离子铣削处理以去除Ta层。

8. 发明申请

US20090165286A1 METHOD FOR MANUFACTURING AN ULTRA NARROW GAP MAGNETORESISTIVE SENSOR 有权
标题翻译：制造超窄带隙磁传感器的方法
公开(公告)号：US20090165286A1
公开(公告)日：2009-07-02
申请号：US11966106
申请日：2007-12-28
申请人： Kuok San Ho , Ying Hong , Wipul Pemsiri Jayasekara , Daniele Mauri
发明人： Kuok San Ho , Ying Hong , Wipul Pemsiri Jayasekara , Daniele Mauri
IPC分类号： G11B5/127
CPC分类号： G11B5/3163 , B82Y25/00 , G01R33/093 , G11B5/398 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A method for manufacturing a magnetoresistive sensor that decreases the stack height of the sensor. The method includes forming a sensor structure having at its top, a Ru layer and a Ta layer over the Ru layer. An annealing process is performed to set the magnetization of the pinned layer of the sensor structure. After the annealing process has been completed and the Ta layer is no longer needed, an ion milling process is performed to remove the Ta layer.
摘要翻译：一种降低传感器堆叠高度的磁阻传感器的制造方法。该方法包括形成传感器结构，其顶部具有在Ru层上的Ru层和Ta层。执行退火处理以设置传感器结构的钉扎层的磁化。在完成退火处理并且不再需要Ta层之后，执行离子铣削处理以去除Ta层。

9. 发明授权

US07444739B2 Method for fabricating improved sensor for a magnetic head utilizing reactive ion milling process 失效
标题翻译：使用反应离子铣削工艺制造用于磁头的改进的传感器的方法
公开(公告)号：US07444739B2
公开(公告)日：2008-11-04
申请号：US11095979
申请日：2005-03-30
申请人： Michael Feldbaum , Wipul Pemsiri Jayasekara , Mustafa Michael Pinarbasi
发明人： Michael Feldbaum , Wipul Pemsiri Jayasekara , Mustafa Michael Pinarbasi
IPC分类号： G11B5/187 , C23F1/12
CPC分类号： G11B5/3903 , G11B5/3163 , Y10T29/49041 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A magnetic head fabrication process in which a stencil layer is deposited upon a plurality of sensor layers. A photoresist mask in the desired read track width is fabricated upon the stencil layer. A reactive ion milling step is then conducted to remove the unmasked portions of the stencil layer. Where the stencil layer is composed of an organic compound, such as Duramide and/or diamond-like-carbon, a reactive ion milling step utilizing oxygen species produces a stencil of the present invention having exceptionally straight side walls with practically no undercuts. Thereafter, an ion milling step is undertaken in which the sensor layers that are not covered by the stencil are removed. The accurately formed stencil results in correspondingly accurately formed side walls of the remaining central sensor layers. A magnetic head sensor structure having a desired read track width and accurately formed side walls is thus fabricated.
摘要翻译：一种磁头制造工艺，其中模版层沉积在多个传感器层上。在模板层上制造具有所需读取磁道宽度的光致抗蚀剂掩模。然后进行反应离子研磨步骤以去除模板层的未掩模部分。当模版层由有机化合物如Duramide和/或类金刚石碳构成时，利用氧气的反应离子研磨步骤产生具有非常直的侧壁的本发明的蜡纸，实际上没有底切。此后，进行离子研磨步骤，其中未被模板覆盖的传感器层被去除。准确地形成的模板导致剩余的中央传感器层的相应精确地形成的侧壁。因此制造了具有期望的读取磁道宽度和精确形成的侧壁的磁头传感器结构。

10. 发明申请

US20080158736A1 READ HEAD HAVING SHAPED READ SENSOR-BIASING LAYER JUNCTIONS USING PARTIAL MILLING 审中-公开
标题翻译：阅读头部使用部分铣削读取传感器 - 偏移层结
公开(公告)号：US20080158736A1
公开(公告)日：2008-07-03
申请号：US12044999
申请日：2008-03-09
申请人： Marie-Claire Cyrille , Wipul Pemsiri Jayasekara , Mustafa Michael Pinarbasi
发明人： Marie-Claire Cyrille , Wipul Pemsiri Jayasekara , Mustafa Michael Pinarbasi
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , G11B5/3903 , G11B5/398 , Y10T29/49039 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A read head and a magnetic hard disk drive having a read head layer stack which has been partially milled to within a partial milling range to form a shaped junction and a hard bias layer which is in contact with the shaped junction of the wafer stack.
摘要翻译：具有读头单元堆叠的读头和磁盘驱动器，其已经被部分铣削到部分铣削范围内，以形成与晶片叠层的成形结接触的成形结和硬偏置层。

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