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1. 发明申请

US20090008633A1 NONVOLATILE MEMORY DEVICE USING CONDUCTIVE ORGANIC POLYMER HAVING NANOCRYSTALS EMBEDDED THEREIN AND METHOD OF MANUFACTURING THE NONVLATILE MEMORY DEVICE 审中-公开
标题翻译：使用具有嵌入的纳米晶体的导电有机聚合物的非易失性存储器件和制造非易失性存储器件的方法
公开(公告)号：US20090008633A1
公开(公告)日：2009-01-08
申请号：US12108590
申请日：2008-04-24
申请人： Jea-Gun Park , Ungyu Paik , Hyun-Min Seung , Sangkyu Lee , Byeong-Il Han
发明人： Jea-Gun Park , Ungyu Paik , Hyun-Min Seung , Sangkyu Lee , Byeong-Il Han
IPC分类号： H01L51/00 , H01L51/40
CPC分类号： H01L51/0575 , B82Y10/00 , G11C13/0014 , G11C13/0016 , G11C2211/5614 , H01L51/0042 , H01L51/0591
摘要： A nonvolatile memory device and a method of manufacturing the same are provided. The nonvolatile memory device which is convertible among a high current state, an intermediate current state, and a low current state, said device includes upper and lower conductive layers; a conductive organic layer comprising a conductive organic polymer and which is formed between the upper and lower conductive layers and has a bistable conduction property; and nanocrystals are formed in the conductive organic layer. The conductive organic polymer may be poly-N-vinylcarbazole (PVK) or polystyrene (PS). The method is characterized in that a conductive organic layer is formed by applying a conductive organic material such as PVK or PS using spin coating. Therefore, it is possible to provide a highly-integrated memory device that consumes less power and provides high operating speed. In addition, it is possible to provide the thermal stability of a memory device by using a conductive organic polymer. Moreover, it is possible to reduce the time required to deposit a conductive organic layer by forming a conductive layer using spin coating. Furthermore, it is possible to form a conductive organic layer in various shapes by using mask patterns that can be formed on a substrate in various shapes.
摘要翻译：提供了一种非易失性存储器件及其制造方法。所述非易失性存储器件可在高电流状态，中等电流状态和低电流状态之间转换，所述器件包括上导电层和下导电层; 导电有机层，其包含导电有机聚合物并且形成在所述上导电层和所述下导电层之间并且具有双稳态导电性; 并且在导电有机层中形成纳米晶体。导电有机聚合物可以是聚-N-乙烯基咔唑（PVK）或聚苯乙烯（PS）。该方法的特征在于，通过使用旋转涂布施加诸如PVK或PS的导电有机材料来形成导电有机层。因此，可以提供消耗较少功率并提供高操作速度的高度集成的存储器件。此外，可以通过使用导电有机聚合物来提供存储器件的热稳定性。此外，可以通过使用旋涂形成导电层来减少沉积导电有机层所需的时间。此外，可以通过使用可以形成在各种形状的基板上的掩模图案来形成各种形状的导电有机层。

2. 发明授权

US08233313B2 Conductive organic non-volatile memory device with nanocrystals embedded in an amorphous barrier layer 有权
标题翻译：具有纳米晶体的导电有机非易失性存储器件嵌入在非晶形阻挡层中
公开(公告)号：US08233313B2
公开(公告)日：2012-07-31
申请号：US13286861
申请日：2011-11-01
申请人： Jea-Gun Park , Sung-Ho Seo , Woo-Sik Nam , Young-Hwan Oh , Yool-Guk Kim , Hyun-Min Seung , Jong-Dae Lee
发明人： Jea-Gun Park , Sung-Ho Seo , Woo-Sik Nam , Young-Hwan Oh , Yool-Guk Kim , Hyun-Min Seung , Jong-Dae Lee
IPC分类号： G11C13/02 , H01L27/28
CPC分类号： H01L27/285 , B82Y10/00 , G11C11/5664 , G11C13/0014 , G11C13/0016 , G11C2211/5614 , G11C2213/51 , G11C2216/06 , H01L51/0042 , H01L51/0591 , Y10S977/943
摘要： A non-volatile memory device includes a plurality of unit cells. Each unit cell includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier. The unit cell receives a plurality of voltage ranges to perform a plurality of operations. A read operation is performed when an input voltage is in a first voltage range. A first write operation is performed when the input voltage is in a second voltage range higher than the first voltage range. A second write operation is performed when the input voltage is in a third voltage range higher than the second voltage range. An erase operation is performed when the input voltage is higher than the third voltage range.
摘要翻译：非易失性存储器件包括多个单元电池。每个单元电池包括在基板上的下电极和上电极，在下电极和上电极之间的导电有机材料层和位于导电有机材料层内的纳米晶体层，其中纳米晶体层包括被非晶形态包围的多个纳米晶体屏障。单元接收多个电压范围以执行多个操作。当输入电压处于第一电压范围时执行读操作。当输入电压处于高于第一电压范围的第二电压范围时，执行第一写入操作。当输入电压处于高于第二电压范围的第三电压范围时，执行第二写入操作。当输入电压高于第三电压范围时，执行擦除操作。

3. 发明授权

US08050081B2 Conductive organic nonvolatile memory device having nanocrystals surrounded by amorphous barrier 有权
标题翻译：具有被无定形屏障包围的纳米晶体的导电有机非易失性存储器件
公开(公告)号：US08050081B2
公开(公告)日：2011-11-01
申请号：US12108465
申请日：2008-04-23
申请人： Jea-Gun Park , Sung-Ho Seo , Woo-Sik Nam , Young-Hwan Oh , Yool-Guk Kim , Hyun-Min Seung , Jong-Dae Lee
发明人： Jea-Gun Park , Sung-Ho Seo , Woo-Sik Nam , Young-Hwan Oh , Yool-Guk Kim , Hyun-Min Seung , Jong-Dae Lee
IPC分类号： G11C13/02 , H01L27/28
CPC分类号： H01L27/285 , B82Y10/00 , G11C11/5664 , G11C13/0014 , G11C13/0016 , G11C2211/5614 , G11C2213/51 , G11C2216/06 , H01L51/0042 , H01L51/0591 , Y10S977/943
摘要： A non-volatile memory device includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier, wherein the device has a multi-level output current according to a voltage level of an input voltage coupled to the lower and the upper electrodes during a data read operation.
摘要翻译：非易失性存储器件包括衬底上的下电极和上电极，位于下电极和上电极之间的导电有机材料层和位于导电有机材料层内的纳米晶体层，其中纳米晶体层包括多个纳米晶体，通过非晶屏障，其中在数据读取操作期间，器件根据耦合到下电极和上电极的输入电压的电压电平具有多电平输出电流。

4. 发明申请

US20090040805A1 NON-VOLATILE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：非易失性存储器件及其制造方法
公开(公告)号：US20090040805A1
公开(公告)日：2009-02-12
申请号：US12108465
申请日：2008-04-23
申请人： Jea-Gun Park , Sung-Ho Seo , Woo-Sik Nam , Young-Hwan Oh , Yool-Guk Kim , Hyun-Min Seung , Jong-Dae Lee
发明人： Jea-Gun Park , Sung-Ho Seo , Woo-Sik Nam , Young-Hwan Oh , Yool-Guk Kim , Hyun-Min Seung , Jong-Dae Lee
IPC分类号： G11C13/04 , H01L51/40
CPC分类号： H01L27/285 , B82Y10/00 , G11C11/5664 , G11C13/0014 , G11C13/0016 , G11C2211/5614 , G11C2213/51 , G11C2216/06 , H01L51/0042 , H01L51/0591 , Y10S977/943
摘要： A non-volatile memory device includes lower and upper electrodes over a substrate, a conductive organic material layer between the lower and the upper electrodes, and a nanocrystal layer located within the conductive organic material layer, wherein the nanocrystal layer includes a plurality of nanocrystals surrounded by an amorphous barrier, wherein the device has a multi-level output current according to a voltage level of an input voltage coupled to the lower and the upper electrodes during a data read operation.
摘要翻译：非易失性存储器件包括衬底上的下电极和上电极，位于下电极和上电极之间的导电有机材料层和位于导电有机材料层内的纳米晶体层，其中纳米晶体层包括多个纳米晶体，通过非晶屏障，其中在数据读取操作期间，器件根据耦合到下电极和上电极的输入电压的电压电平具有多电平输出电流。

5. 发明申请

US20110205217A1 METHOD OF DRIVING DISPLAY PANEL 有权
标题翻译：驱动显示面板的方法
公开(公告)号：US20110205217A1
公开(公告)日：2011-08-25
申请号：US12451066
申请日：2008-04-24
申请人： Jae-Gun Park , Gon-Sub Lee , Su-Hwan Lee , Sung-Ho Seo , Dong-Won Shin , Dal-Ho Kim , Hyun-Min Seung
发明人： Jae-Gun Park , Gon-Sub Lee , Su-Hwan Lee , Sung-Ho Seo , Dong-Won Shin , Dal-Ho Kim , Hyun-Min Seung
IPC分类号： G09G5/00 , G09G3/30
CPC分类号： H05B33/22 , B82Y20/00 , B82Y30/00 , G09G3/2011 , G09G3/3216 , G09G2310/061 , H01L27/26 , H01L27/3244 , H01L51/0591 , H01L51/52 , H01L2251/5338 , H01L2251/5369
摘要： Provided is a method of driving a display panel having a charge trap device and an organic light emitting diode (OLED). The charge trap device includes a nanocrystal layer. The nanocrystal layer includes nanocrystals, which are crystallized and dispersed, and a barrier layer, which buries the nanocrystals. When a program voltage is applied, charges are trapped in the nanocrystals, and the OLED emits light at a predetermined luminance with the application of a read voltage. Data signals are sequentially applied to all pixels of the display panel to express desired grayscales. The pixels of the display panel receive the read voltage and emit light at the same time.
摘要翻译：提供了一种驱动具有电荷捕获器件和有机发光二极管（OLED）的显示面板的方法。电荷捕获器件包括纳米晶体层。纳米晶体层包括结晶和分散的纳米晶体，以及掩埋纳米晶体的阻挡层。当施加编程电压时，电荷被捕获在纳米晶体中，并且OLED通过施加读取电压以预定亮度发光。数据信号顺序地施加到显示面板的所有像素以表达所需的灰度。显示面板的像素接收读取电压并同时发光。

6. 发明授权

US08441472B2 Method of driving display panel 有权
标题翻译：显示面板驱动方法
公开(公告)号：US08441472B2
公开(公告)日：2013-05-14
申请号：US12451066
申请日：2008-04-24
申请人： Jae-Gun Park , Gon-Sub Lee , Su-Hwan Lee , Sung-Ho Seo , Woo-Sik Nam , Dong-Won Shin , Dal-Ho Kim , Hyun-Min Seung , Jong-Dae Lee
发明人： Jae-Gun Park , Gon-Sub Lee , Su-Hwan Lee , Sung-Ho Seo , Woo-Sik Nam , Dong-Won Shin , Dal-Ho Kim , Hyun-Min Seung , Jong-Dae Lee
IPC分类号： G09G5/00 , G06F3/038
CPC分类号： H05B33/22 , B82Y20/00 , B82Y30/00 , G09G3/2011 , G09G3/3216 , G09G2310/061 , H01L27/26 , H01L27/3244 , H01L51/0591 , H01L51/52 , H01L2251/5338 , H01L2251/5369
摘要： Provided is a method of driving a display panel having a charge trap device and an organic light emitting diode (OLED). The charge trap device includes a nanocrystal layer. The nanocrystal layer includes nanocrystals, which are crystallized and dispersed, and a barrier layer, which buries the nanocrystals. When a program voltage is applied, charges are trapped in the nanocrystals, and the OLED emits light at a predetermined luminance with the application of a read voltage. Data signals are sequentially applied to all pixels of the display panel to express desired grayscales. The pixels of the display panel receive the read voltage and emit light at the same time.
摘要翻译：提供了一种驱动具有电荷捕获器件和有机发光二极管（OLED）的显示面板的方法。电荷捕获器件包括纳米晶体层。纳米晶体层包括结晶和分散的纳米晶体，以及掩埋纳米晶体的阻挡层。当施加编程电压时，电荷被捕获在纳米晶体中，并且OLED通过施加读取电压以预定亮度发光。数据信号顺序地施加到显示面板的所有像素以表达所需的灰度。显示面板的像素接收读取电压并同时发光。

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