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1. 发明授权

US11179749B2 Interposer, ultrasound probe using the same, and method of manufacturing interposer 有权
公开(公告)号：US11179749B2
公开(公告)日：2021-11-23
申请号：US16038875
申请日：2018-07-18
申请人： SAMSUNG ELECTRONICS CO., LTD. , Dong Won Shin
发明人： Kyung-moo Choi , Dong Won Shin
IPC分类号： B06B1/06 , G01S15/89 , G01S7/52
摘要： An interposer includes: a circuit board stack in which circuit boards are stacked; and an outer board arranged on at least one of outer side surfaces of the circuit board stack. The circuit boards are arranged include first conductive lines having first ends exposed through a first side portion of the circuit boards and second ends exposed through a second side portion opposite the first side portion of the circuit boards. The outer board includes second conductive lines having first ends exposed through a different side from the first side portion of the circuit boards and second ends exposed through a side portion located on a same side as the second side portion of the circuit boards.

2. 发明申请

US20110205217A1 METHOD OF DRIVING DISPLAY PANEL 有权
标题翻译：驱动显示面板的方法
公开(公告)号：US20110205217A1
公开(公告)日：2011-08-25
申请号：US12451066
申请日：2008-04-24
申请人： Jae-Gun Park , Gon-Sub Lee , Su-Hwan Lee , Sung-Ho Seo , Dong-Won Shin , Dal-Ho Kim , Hyun-Min Seung
发明人： Jae-Gun Park , Gon-Sub Lee , Su-Hwan Lee , Sung-Ho Seo , Dong-Won Shin , Dal-Ho Kim , Hyun-Min Seung
IPC分类号： G09G5/00 , G09G3/30
CPC分类号： H05B33/22 , B82Y20/00 , B82Y30/00 , G09G3/2011 , G09G3/3216 , G09G2310/061 , H01L27/26 , H01L27/3244 , H01L51/0591 , H01L51/52 , H01L2251/5338 , H01L2251/5369
摘要： Provided is a method of driving a display panel having a charge trap device and an organic light emitting diode (OLED). The charge trap device includes a nanocrystal layer. The nanocrystal layer includes nanocrystals, which are crystallized and dispersed, and a barrier layer, which buries the nanocrystals. When a program voltage is applied, charges are trapped in the nanocrystals, and the OLED emits light at a predetermined luminance with the application of a read voltage. Data signals are sequentially applied to all pixels of the display panel to express desired grayscales. The pixels of the display panel receive the read voltage and emit light at the same time.
摘要翻译：提供了一种驱动具有电荷捕获器件和有机发光二极管（OLED）的显示面板的方法。电荷捕获器件包括纳米晶体层。纳米晶体层包括结晶和分散的纳米晶体，以及掩埋纳米晶体的阻挡层。当施加编程电压时，电荷被捕获在纳米晶体中，并且OLED通过施加读取电压以预定亮度发光。数据信号顺序地施加到显示面板的所有像素以表达所需的灰度。显示面板的像素接收读取电压并同时发光。

3. 发明授权

US6161623A Method and apparatus for controlling fire and smoke 失效
标题翻译：防火和烟雾控制的方法和装置
公开(公告)号：US6161623A
公开(公告)日：2000-12-19
申请号：US171254
申请日：1999-03-05
申请人： Dong-Won Shin
发明人： Dong-Won Shin
IPC分类号： E06B5/00 , A62C2/00 , A62C2/08 , E06B5/16 , A62C35/00
CPC分类号： A62C2/08 , E06B5/16
摘要： Control of smoke and fire in a region threatened by a fire through the use of an exit door and a doorcase around an exit door is accomplished in such a manner to first supply water from a water source to a water supply tube which is connected to the doorcase in a constant level of pressure by a pump. The water supply tube which is connected to the doorcase in a constant level of pressure by a pump. The water supply tube is provided with a solenoid valve for controlling the water flow into the doorcase and a branch-connecting portion. Further, pressurized air is supplied to an air supply tube connected to the branch-connecting portion to fluid-communicate with the water supply tube. The air supply tube is provided with an air solenoid valve for controlling the airflow into the branch-connecting portion. The solenoid valve is opened to render the water to flow into the doorcase having a plurality of nozzle holes facing to the exit door, if a fire is detected either by a detector or a manual actuator. Further, the air solenoid valve is opened to render the air under pressure to flow into the branch-connecting portion, if opening the exit door is detected by a pressure sensor.
摘要翻译： PCT No.PCT / KR97 / 00064 Sec。 371日期1999年3月5日 102（e）1999年3月5日PCT PCT 1997年4月25日PCT公布。公开号WO97 / 39801 日期1997年10月30日通过在出口门周围使用出口门和门柜来控制受到火灾威胁的地区的烟火和火灾，以便首先将水从水源供应到供水管其通过泵以恒定的压力水平连接到门口。供水管通过泵以恒定的压力水平连接到门口。供水管设置有用于控制进入门室的水流的电磁阀和分支连接部分。此外，加压空气被供给到与分支连接部连接的空气供给管，以与供水管流体连通。供气管设有用于控制进入分支连接部分的气流的空气电磁阀。如果由检测器或手动致动器检测到火灾，则打开电磁阀以使水流入门室，其具有面向出口门的多个喷嘴孔。此外，如果通过压力传感器检测到打开出口门，则空气电磁阀被打开以使压力下的空气流入分支连接部分。

4. 发明授权

US11631798B2 Bonding interposer and integrated circuit chip, and ultrasound probe using the same 有权
公开(公告)号：US11631798B2
公开(公告)日：2023-04-18
申请号：US16038348
申请日：2018-07-18
申请人： SAMSUNG ELECTRONICS CO., LTD. , Dong Won Shin
发明人： Kyung-moo Choi , Dong Won Shin
IPC分类号： H01L41/047 , G01S7/52 , G01S15/89 , A61B8/00 , B06B1/06 , G01N29/24 , H01L21/48 , H01L23/538 , H01L23/00 , H01L25/16 , H01L41/09 , H01L41/25
摘要： The method of bonding an interposer and an integrated circuit chip includes preparing an interposer including an insulator and conductive lines each having one end exposed to a first surface of the insulator and another end exposed to a second surface opposite to the first surface; placing a bonding mask on the interposer; forming through-holes on the bonding mask before or after the placing of the bonding mask on the interposer; filling the plurality with a conductive material; and bonding an integrated circuit chip to the bonding mask.

5. 发明申请

US20190022701A1 INTERPOSER, ULTRASOUND PROBE USING THE SAME, AND METHOD OF MANUFACTURING INTERPOSER 审中-公开
公开(公告)号：US20190022701A1
公开(公告)日：2019-01-24
申请号：US16038875
申请日：2018-07-18
申请人： SAMSUNG ELECTRONICS CO., LTD. , Dong Won SHIN
发明人： Kyung-moo CHOI , Dong Won SHIN
IPC分类号： B06B1/06
摘要： An interposer includes: a circuit board stack in which circuit boards are stacked; and an outer board arranged on at least one of outer side surfaces of the circuit board stack. The circuit boards are arranged include first conductive lines having first ends exposed through a first side portion of the circuit boards and second ends exposed through a second side portion opposite the first side portion of the circuit boards. The outer board includes second conductive lines having first ends exposed through a different side from the first side portion of the circuit boards and second ends exposed through a side portion located on a same side as the second side portion of the circuit boards.

6. 发明授权

US07601630B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07601630B2
公开(公告)日：2009-10-13
申请号：US11020827
申请日：2004-12-22
申请人： Je-Min Park , Dong-Won Shin , Yoo-Sang Hwang
发明人： Je-Min Park , Dong-Won Shin , Yoo-Sang Hwang
IPC分类号： H01L21/4763 , H01L21/8239 , H01L21/8242
CPC分类号： H01L21/76895 , H01L27/0629 , H01L27/10814 , H01L27/10885 , H01L27/10894
摘要： A method of fabricating a semiconductor memory device and a structure that forms both a resistor and an etching protection layer to reduce a contact resistance. The method of fabricating a semiconductor memory device according to the invention includes forming an insulation layer on a semiconductor substrate having a cell array region, a core region, and a peripheral region, each having at least one transistor formed therein, and forming both a first landing pad in the core region on the insulation layer and a second landing pad in the peripheral region, the first landing pad being overlapped with a part of a first conductive line. The invention reduces the contact resistance and prevents or minimizes a device failure caused by a misalignment, with the simplified process.
摘要翻译：制造半导体存储器件的方法和形成电阻器和蚀刻保护层的结构以降低接触电阻。根据本发明的制造半导体存储器件的方法包括在具有单元阵列区域，芯区域和周边区域的半导体衬底上形成绝缘层，每个晶体管阵列区域和外围区域都具有形成在其中的至少一个晶体管，并且形成第一在绝缘层上的芯区域中的着陆焊盘和外围区域中的第二着陆焊盘，第一着陆焊盘与第一导电线的一部分重叠。本发明通过简化的过程降低了接触电阻并且防止或最小化由不对准引起的设备故障。

7. 发明授权

US07153740B2 Fabrication of lean-free stacked capacitors 有权
公开(公告)号：US07153740B2
公开(公告)日：2006-12-26
申请号：US10853628
申请日：2004-05-25
申请人： Dae-Hwan Kim , Min Heo , Dong-Won Shin , Byeong-Hyeon Lee
发明人： Dae-Hwan Kim , Min Heo , Dong-Won Shin , Byeong-Hyeon Lee
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/0207 , H01L27/10852 , H01L27/10855
摘要： For fabricating lean-free stacked capacitors, openings are formed through layers of materials including a layer of support material displaced from a bottom of the openings. A respective first electrode is formed for a respective capacitor within each of the openings. The layer of support material is patterned to form support structures around the first electrodes. Masking spacers are formed around exposed top portions of the first electrodes, and exposed portions of the support material are etched away to form the support structures. Such stacked capacitors are applied within a DRAM (dynamic random access memory).

8. 发明授权

US06956433B2 Polynomial predistorter using complex vector multiplication 有权
标题翻译：多项式预失真器使用复矢量乘法
公开(公告)号：US06956433B2
公开(公告)日：2005-10-18
申请号：US10772348
申请日：2004-02-06
申请人： Dong-Hyun Kim , Dong-Won Shin
发明人： Dong-Hyun Kim , Dong-Won Shin
IPC分类号： H03F1/32 , H03F1/26 , H03F1/30
CPC分类号： H03F1/3258 , H03F1/3247 , H03F1/3294
摘要： A polynomial predistorter and predistorting method for predistorting a complex modulated baseband signal are provided. In the polynomial predistorter, a first complex multiplier generates first complex predistortion gains, using a current input signal and complex polynomial coefficients modeled on the inverse non-linear distortion characteristic of the power amplifier, and multiplies them by I and Q signal components of the current input signal, respectively. At least one second complex multiplier generates second complex predistortion gains using the complex polynomial coefficients and previous predistorted signals and multiplies them by I and Q signal components of the previous predistorted signals, respectively. A summer sums the outputs of the first and second complex multipliers and outputs the sum as a predistorted signal to the power amplifier.
摘要翻译：提供了一种用于预失真复调制基带信号的多项式预失真器和预失真方法。在多项式预失真器中，第一复数乘法器使用当前输入信号和基于功率放大器的逆非线性失真特性建模的复数多项式系数产生第一复数预失真增益，并将它们乘以电流的I和Q信号分量输入信号。至少一个第二复数乘法器使用复数多项式系数和先前的预失真信号分别产生第二复数预失真增益，并将它们乘以先前预失真信号的I和Q信号分量。夏季对第一和第二复数乘法器的输出求和，并将该和作为预失真信号输出到功率放大器。

9. 发明申请

US20050176210A1 Fabrication of lean-free stacked capacitors 有权
标题翻译：无稀土堆叠电容器的制造
公开(公告)号：US20050176210A1
公开(公告)日：2005-08-11
申请号：US10853628
申请日：2004-05-25
申请人： Dae-Hwan Kim , Min Huh , Dong-Won Shin , Byeong-Hyeon Lee
发明人： Dae-Hwan Kim , Min Huh , Dong-Won Shin , Byeong-Hyeon Lee
IPC分类号： H01L21/02 , H01L21/8242 , H01L27/02 , H01L27/108 , H01L29/92 , H01L21/20
CPC分类号： H01L28/91 , H01L27/0207 , H01L27/10852 , H01L27/10855
摘要： For fabricating lean-free stacked capacitors, openings are formed through layers of materials including a layer of support material displaced from a bottom of the openings. A respective first electrode is formed for a respective capacitor within each of the openings. The layer of support material is patterned to form support structures around the first electrodes. Masking spacers are formed around exposed top portions of the first electrodes, and exposed portions of the support material are etched away to form the support structures. Such stacked capacitors are applied within a DRAM (dynamic random access memory).
摘要翻译：为了制造无稀土堆叠电容器，通过材料层形成开口，包括从开口底部移位的支撑材料层。在每个开口内为相应的电容器形成相应的第一电极。图案化支撑材料层以形成围绕第一电极的支撑结构。在第一电极的暴露的顶部周围形成遮蔽间隔物，并且蚀刻掉支撑材料的暴露部分以形成支撑结构。这种叠层电容器被应用在DRAM（动态随机存取存储器）内。

10. 发明授权

US06730956B2 Method for manufacturing the storage node of a capacitor of a semiconductor device and a storage node manufactured by the method 失效
标题翻译：用于制造半导体器件的电容器的存储节点的方法和通过该方法制造的存储节点
公开(公告)号：US06730956B2
公开(公告)日：2004-05-04
申请号：US10329488
申请日：2002-12-27
申请人： Dong-il Bae , Dong-won Shin , Sang-hyeon Lee
发明人： Dong-il Bae , Dong-won Shin , Sang-hyeon Lee
IPC分类号： H01L27108
CPC分类号： H01L28/91 , H01L27/10852
摘要： Methods for manufacturing a storage node of a capacitor of a semiconductor device and a storage node manufactured by these methods are provided. An exemplary method for manufacturing a storage node of a capacitor of a semiconductor device includes forming a mold layer on a semiconductor substrate, forming a mold for the storage node by patterning the mold layer by a photolithography process, introducing a photomask which includes a plurality of light transmitting patterns separated from each other and which define the region to be occupied by the storage node, and forming a storage node that has the shape formed by the mold. The photolithography process is performed with the occurrence of a pattern bridge phenomenon, e.g., the transferred light transmitting patterns are connected to each other in a pattern transferred from the light transmitting patterns to the mold.
摘要翻译：提供了通过这些方法制造半导体器件的电容器的存储节点和存储节点的方法。用于制造半导体器件的电容器的存储节点的示例性方法包括在半导体衬底上形成模具层，通过光刻工艺对模具层进行图案化形成用于存储节点的模具，引入包括多个光传输图案彼此分离并且限定要由存储节点占据的区域，以及形成具有由模具形成的形状的存储节点。光刻工艺是在出现图形桥现象的情况下进行的，例如，转印的光透射图案以从透光图案转印到模具的图案彼此连接。

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