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    • 5. 发明申请
    • NONVOLATILE MEMORY DEVICE USING CONDUCTIVE ORGANIC POLYMER HAVING NANOCRYSTALS EMBEDDED THEREIN AND METHOD OF MANUFACTURING THE NONVLATILE MEMORY DEVICE
    • 使用具有嵌入的纳米晶体的导电有机聚合物的非易失性存储器件和制造非易失性存储器件的方法
    • US20090008633A1
    • 2009-01-08
    • US12108590
    • 2008-04-24
    • Jea-Gun ParkUngyu PaikHyun-Min SeungSangkyu LeeByeong-Il Han
    • Jea-Gun ParkUngyu PaikHyun-Min SeungSangkyu LeeByeong-Il Han
    • H01L51/00H01L51/40
    • H01L51/0575B82Y10/00G11C13/0014G11C13/0016G11C2211/5614H01L51/0042H01L51/0591
    • A nonvolatile memory device and a method of manufacturing the same are provided. The nonvolatile memory device which is convertible among a high current state, an intermediate current state, and a low current state, said device includes upper and lower conductive layers; a conductive organic layer comprising a conductive organic polymer and which is formed between the upper and lower conductive layers and has a bistable conduction property; and nanocrystals are formed in the conductive organic layer. The conductive organic polymer may be poly-N-vinylcarbazole (PVK) or polystyrene (PS). The method is characterized in that a conductive organic layer is formed by applying a conductive organic material such as PVK or PS using spin coating. Therefore, it is possible to provide a highly-integrated memory device that consumes less power and provides high operating speed. In addition, it is possible to provide the thermal stability of a memory device by using a conductive organic polymer. Moreover, it is possible to reduce the time required to deposit a conductive organic layer by forming a conductive layer using spin coating. Furthermore, it is possible to form a conductive organic layer in various shapes by using mask patterns that can be formed on a substrate in various shapes.
    • 提供了一种非易失性存储器件及其制造方法。 所述非易失性存储器件可在高电流状态,中等电流状态和低电流状态之间转换,所述器件包括上导电层和下导电层; 导电有机层,其包含导电有机聚合物并且形成在所述上导电层和所述下导电层之间并且具有双稳态导电性; 并且在导电有机层中形成纳米晶体。 导电有机聚合物可以是聚-N-乙烯基咔唑(PVK)或聚苯乙烯(PS)。 该方法的特征在于,通过使用旋转涂布施加诸如PVK或PS的导电有机材料来形成导电有机层。 因此,可以提供消耗较少功率并提供高操作速度的高度集成的存储器件。 此外,可以通过使用导电有机聚合物来提供存储器件的热稳定性。 此外,可以通过使用旋涂形成导电层来减少沉积导电有机层所需的时间。 此外,可以通过使用可以形成在各种形状的基板上的掩模图案来形成各种形状的导电有机层。