会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Wafer burn-in testing method
    • 晶圆老化测试方法
    • US06384613B1
    • 2002-05-07
    • US09064264
    • 1998-04-22
    • Jao-Chin ChengMing-Hsien Chen
    • Jao-Chin ChengMing-Hsien Chen
    • G01R3102
    • G01R31/2856G01R31/2862
    • A method for burn-in testing a complete wafer comprising the steps of first providing a wafer, and then forming a plurality of bumps thereon. Next, a tape-automated bonding tape having a plurality of bonding pads is designed and fabricated, wherein each bonding pad includes a corresponding circuit and an external contact point. Then, electrical connections between the bonding pads and the bumps are made and a plurality of voltages and currents are supplied through the tape-automated bonding tape for carrying out burn-in tests. Bum-in tests are performed for the whole wafer. Defective chips are singled out after the wafer is cut up and only good chips are used for subsequent packaging. Therefore, production cost can be saved and packaging yield can be increased. Furthermore, a multiple circuit layers design can be employed to fabricate the tape-automated bonding tape. Consequently, circuits necessary for carrying out the burn-in test for the whole wafer is simplified.
    • 一种用于老化测试完整晶片的方法,包括以下步骤:首先提供晶片,然后在其上形成多个凸块。 接下来,设计并制造具有多个接合焊盘的带自动化接合带,其中每个接合焊盘包括相应的电路和外部接触点。 然后,形成接合焊盘和凸块之间的电连接,并且通过带自动化粘合带供给多个电压和电流,以进行老化测试。 对整个晶片进行Bum-in测试。 在切割晶片之后,选择出缺陷的芯片,并且仅将好的芯片用于随后的封装。 因此,可以节省生产成本,并且可以提高包装产量。 此外,可以采用多电路层设计来制造带自动化粘合带。 因此,简化了对整个晶片进行老化测试所需的电路。
    • 6. 发明授权
    • Method of forming IC package having downward-facing chip cavity
    • 形成具有向下的芯片腔的IC封装的方法
    • US06506632B1
    • 2003-01-14
    • US10078211
    • 2002-02-15
    • Jao-Chin ChengChih-Peng FanDavid C. H. Cheng
    • Jao-Chin ChengChih-Peng FanDavid C. H. Cheng
    • H01L2144
    • H01L24/82H01L21/568H01L21/6835H01L23/49816H01L23/5389H01L24/24H01L24/97H01L2224/45144H01L2224/73267H01L2224/82005H01L2224/82039H01L2224/82047H01L2224/97H01L2924/01029H01L2924/01033H01L2924/01075H01L2924/01078H01L2924/01079H01L2924/01082H01L2924/014H01L2924/10253H01L2924/14H01L2924/15311H01L2924/181H01L2924/18162H01L2224/82H01L2924/00
    • A method of forming an integrated circuit package with a downward-facing chip cavity. A substrate comprising an insulating core layer and a conductive layer is provided. A through-hole is formed in the substrate and an adhesive tape is attached to the surface of the conductive layer. A silicon chip is attached to the exposed adhesive tape surface at the bottom of the first opening. The chip has an active surface and a back surface. The chip further includes a plurality of bonding pads on the active surface. The back surface of the chip is attached to the adhesive tape. A patterned dielectric layer is formed filling the first opening and covering a portion of the adhesive tape, the active surface, the bonding pad and the insulating core layer. The patterned dielectric layer has a plurality of openings that exposes the bonding pads and some through holes. A metallic layer is formed over the exposed surface of the openings and the upper surface of the patterned dielectric layer by electroplating. The adhesive tape is removed. The metallic layer and the conductive layer are patterned. A patterned solder resistant layer is formed over the metallic layer and the conductive layer. The patterned solder resistant layer has a plurality of openings that expose a portion of the conductive layer. A solder ball implant is conducted to form electrical connection between the solder balls and the conductive layer.
    • 一种形成具有朝下的芯片腔的集成电路封装的方法。 提供了包括绝缘芯层和导电层的衬底。 在基板中形成通孔,并且在导电层的表面上附着粘合带。 硅芯片附着在第一开口底部的暴露的胶带表面上。 芯片具有活性表面和背面。 所述芯片还包括在所述有源表面上的多个接合焊盘。 芯片的背面附着在胶带上。 形成图案化的介电层,填充第一开口并覆盖粘合带,活性表面,接合焊盘和绝缘芯层的一部分。 图案化电介质层具有暴露接合焊盘和一些通孔的多个开口。 通过电镀在开口的暴露表面和图案化电介质层的上表面上形成金属层。 去除胶带。 金属层和导电层被图案化。 在金属层和导电层之上形成图案化的阻焊层。 图案化的阻焊层具有暴露导电层的一部分的多个开口。 导电焊球植入物以形成焊球和导电层之间的电连接。
    • 8. 发明授权
    • Method of forming micro-via
    • 形成微孔的方法
    • US06395633B1
    • 2002-05-28
    • US09871206
    • 2001-05-31
    • Jao-Chin ChengChang-Chin HsiehChih-Peng FanChin-Chung Chang
    • Jao-Chin ChengChang-Chin HsiehChih-Peng FanChin-Chung Chang
    • H01L2144
    • H05K3/4647H05K3/108H05K3/243H05K2203/0542H05K2203/0733
    • A method of forming a micro-via, for fabrication and design of a layout of a circuit board. A patterned conductive wiring layer is formed on the substrate. A copper layer is plated onto the substrate and the conductive wiring layer. A photoresist layer is formed on the copper layer. A part of the photoresist layer is removed to expose a part of the copper layer. Using the copper layer as a seed layer, a conductive pillar is formed on the exposed part of the copper layer. The photoresist layer is removed. The exposed plated copper layer is removed. An insulation layer is formed on surfaces of the substrate and the conductive pillar. A part of the insulation layer is removed to expose the conductive pillar. A patterned conductive wiring layer is formed on the conductive pillar.
    • 一种形成微通孔的方法,用于制造和设计电路板的布局。 在基板上形成有图案的导电布线层。 将铜层镀在基板和导电布线层上。 在铜层上形成光致抗蚀剂层。 去除光致抗蚀剂层的一部分以露出铜层的一部分。 使用铜层作为种子层,在铜层的露出部分上形成导电柱。 去除光致抗蚀剂层。 暴露的镀铜层被去除。 在基板和导电柱的表面上形成绝缘层。 去除绝缘层的一部分以露出导电柱。 在导电柱上形成有图案的导电布线层。