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1. 发明授权

US5935871A Process for forming a semiconductor device 失效
标题翻译：用于形成半导体器件的工艺
公开(公告)号：US5935871A
公开(公告)日：1999-08-10
申请号：US916297
申请日：1997-08-22
申请人： Janos Farkas , David Watts , Melissa Freeman
发明人： Janos Farkas , David Watts , Melissa Freeman
IPC分类号： H01L21/02 , H01L21/321 , H01L21/768 , H01L21/00
CPC分类号： H01L21/3212 , H01L21/02074 , H01L21/7684
摘要： A process has been developed for a post-chemical mechanical polishing cleaning/passivting step to remove slurry particles (52) and form a passivating film (64) from a portion of an interconnect material within a conductive layer (42) without attacking the interconnecting material. In one particular embodiment, a solution having a pH greater than the isoelectric point of alumina particles is exposed to the surface of an interconnect material of a conductive layer (42) to passivate a portion of the interconnect material while changing the charge of the slurry particles (52) such that they are repelled away from the surface of the substrate and removed by the cleaning solution, or other cleaning processes.
摘要翻译：已经开发了用于后化学机械抛光清洗/钝化步骤以从导电层（42）内的互连材料的一部分去除浆料颗粒（52）并形成钝化膜（64）的方法，而不侵害互连材料。在一个具体实施方案中，将具有大于氧化铝颗粒的等电点的pH的溶液暴露于导电层（42）的互连材料的表面，以钝化一部分互连材料，同时改变浆料颗粒的电荷（52），使得它们被排出离开基板的表面并被清洁溶液或其它清洁过程除去。

2. 发明授权

US5897375A Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture 失效
标题翻译：用于铜的化学机械抛光（CMP）浆料和集成电路制造中的使用方法
公开(公告)号：US5897375A
公开(公告)日：1999-04-27
申请号：US954190
申请日：1997-10-20
申请人： David Watts , Rajeev Bajaj , Sanjit Das , Janos Farkas , Chelsea Dang , Melissa Freeman , Jaime A. Saravia , Jason Gomez , Lance B. Cook
发明人： David Watts , Rajeev Bajaj , Sanjit Das , Janos Farkas , Chelsea Dang , Melissa Freeman , Jaime A. Saravia , Jason Gomez , Lance B. Cook
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , B24B1/00
CPC分类号： C23F3/00 , C09G1/02 , C09K3/1463 , C09K3/1472
摘要： A method for chemical mechanical polishing (CMP) a copper layer (22) begins by forming the copper layer (22). The copper layer (22) is then exposed to a slurry (24). The slurry (24) contains an oxidizing agent such as H.sub.2 O.sub.2, a carboxylate salt such as ammonium citrate, an abrasive slurry such as alumna abrasive, an optional triazole or triazole derivative, and a remaining balance of a solvent such as deionized water. The use of the slurry (24) polishes the copper layer (22) with a high rate of removal whereby pitting and corrosion of the copper layer (22) is reduced and good copper interconnect planarity is achieved. This slurry (24) has good selectivity of copper to oxide, and results in copper devices which have good electrical performance. In addition, disposal of the slurry (24) is not environmentally difficult since the slurry (24) is environmentally sound when compared to other prior art slurries.
摘要翻译：通过形成铜层（22）开始化学机械抛光（CMP）铜层（22）的方法。然后将铜层（22）暴露于浆料（24）。浆料（24）含有氧化剂如H 2 O 2，羧酸盐如柠檬酸铵，研磨浆如校准研磨剂，任选的三唑或三唑衍生物，剩余的溶剂如去离子水。浆料（24）的使用以高的去除速度抛光铜层（22），从而降低了铜层（22）的点蚀和腐蚀，并实现了良好的铜互连平面性。这种浆料（24）具有铜对氧化物的良好选择性，并且导致具有良好电性能的铜器件。此外，浆料（24）的处理不是环境困难的，因为与其它现有技术的浆料相比，浆料（24）是无害环境的。

3. 发明授权

US6001730A Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers 失效
标题翻译：用于抛光使用钽基阻挡层的铜互连的化学机械抛光（CMP）浆料
公开(公告)号：US6001730A
公开(公告)日：1999-12-14
申请号：US954191
申请日：1997-10-20
申请人： Janos Farkas , Rajeev Bajaj , Melissa Freeman , David K. Watts , Sanjit Das
发明人： Janos Farkas , Rajeev Bajaj , Melissa Freeman , David K. Watts , Sanjit Das
IPC分类号： C09G1/02 , H01L21/321 , H01L21/768 , H01L1/00
CPC分类号： H01L21/76873 , C09G1/02 , H01L21/3212 , H01L21/7684 , H01L21/76843 , H01L21/76877
摘要： A method for forming a copper interconnect on an integrated circuit (IC) begins by forming a dielectric layer (20) having an opening. A tantalum-based barrier layer (21), such as TaN or TaSiN, is formed within the opening in the layer (20). A copper layer (22) is formed over the barrier layer (21). A first CMP process is used to polish the copper (22) to expose portions of the barrier (21). A second CMP process which is different from the first CMP process is then used to polish exposed portions of the layer (21) faster than the dielectric layer (20) or the copper layer (22). After this two-step CMP process, a copper interconnect having a tantalum-based barrier is formed across the integrated circuit substrate (12).
摘要翻译：在集成电路（IC）上形成铜互连的方法通过形成具有开口的电介质层（20）开始。在层（20）的开口内形成有TaN或TaSiN等钽系阻挡层（21）。在阻挡层（21）的上方形成铜层（22）。第一CMP工艺用于抛光铜（22）以暴露阻挡层（21）的部分。然后使用与第一CMP工艺不同的第二CMP工艺来比电介质层（20）或铜层（22）更快地抛光层（21）的暴露部分。在该两步CMP工艺之后，跨越集成电路基板（12）形成具有钽基阻挡层的铜互连。

4. 发明授权

US5773364A Method for using ammonium salt slurries for chemical mechanical polishing (CMP) 失效
标题翻译：使用铵盐浆料进行化学机械抛光（CMP）的方法
公开(公告)号：US5773364A
公开(公告)日：1998-06-30
申请号：US734566
申请日：1996-10-21
申请人： Janos Farkas , Melissa Freeman
发明人： Janos Farkas , Melissa Freeman
IPC分类号： B24B1/00 , H01L21/304 , H01L21/3205 , H01L21/321 , H01L21/00
CPC分类号： H01L21/3212
摘要： A method for chemical/mechanical polishing (CMP) uses a slurry (22). This slurry (22) contains one or more ammonium salts, such as ammonium nitride (NH.sub.4 NO.sub.3), as an oxidizing/etching species within the slurry (22). This slurry (22) is used to polish a metal layer (14) whereby the ammonium salt does not create slurry distribution problems, does not contain metallic species, does not contain mobile ions like potassium, and is environmentally safe.
摘要翻译：化学/机械抛光（CMP）的方法使用浆料（22）。该浆料（22）含有一种或多种铵盐，例如氮化铵（NH 4 NO 3），作为浆料（22）内的氧化/蚀刻物质。这种浆料（22）用于抛光金属层（14），由此铵盐不会产生浆料分布问题，不含金属物质，不含钾等可移动离子，对环境无害。

5. 发明授权

US5863838A Method for chemically-mechanically polishing a metal layer 失效
标题翻译：化学机械抛光金属层的方法
公开(公告)号：US5863838A
公开(公告)日：1999-01-26
申请号：US684782
申请日：1996-07-22
申请人： Janos Farkas , Melissa Freeman
发明人： Janos Farkas , Melissa Freeman
IPC分类号： B24B1/00 , C23F3/00 , H01L21/304 , H01L21/321 , H01L21/60 , C23F3/18 , H05K3/26
CPC分类号： H01L24/83 , C23F3/00 , H01L24/29 , H01L2224/29298 , H01L2224/8319 , H01L2224/838 , H01L2924/00011 , H01L2924/00013 , H01L2924/01004 , H01L2924/01013 , H01L2924/01015 , H01L2924/01021 , H01L2924/01029 , H01L2924/01033 , H01L2924/01058 , H01L2924/01073 , H01L2924/01074 , H01L2924/04941 , H01L2924/04953 , H01L2924/0781 , H01L2924/3025
摘要： A method of manufacturing a semiconductor device includes providing (51) a substrate (19), providing (52) a colloid (17) having particles held in suspension, providing (53) a reagent (18), disposing (54) the substrate (19) in a processing tool (10), combining (55) the colloid (17) and the reagent (18) to form a slurry (28), decomposing (56) the reagent (18) into a surfactant and an oxidizer, using (57) the slurry (28) to process the substrate (19) in the processing tool (10), and removing (58) the substrate (19) from the processing tool (10).
摘要翻译：一种制造半导体器件的方法包括提供（51）基片（19），提供（52）具有保持悬浮颗粒的胶体（17），提供（53）试剂（18），设置（54）基片 19），加工工具（10）中，组合（55）胶体（17）和试剂（18）以形成浆料（28），将试剂（18）分解成表面活性剂和氧化剂，使用（57）处理加工工具（10）中的基板（19）的浆料（28），以及从处理工具（10）移除（58）基板（19）。

6. 发明授权

US08752228B2 Apparatus for cleaning of circuit substrates 有权
标题翻译：电路基板清洗装置
公开(公告)号：US08752228B2
公开(公告)日：2014-06-17
申请号：US11912126
申请日：2005-04-20
申请人： Janos Farkas , Srdjan Kordic , Sebastien Petitdidier , Kevin E Cooper , Jan Van Hassel
发明人： Janos Farkas , Srdjan Kordic , Sebastien Petitdidier , Kevin E Cooper , Jan Van Hassel
IPC分类号： H01L21/00
CPC分类号： H01L21/67046
摘要： Silicon wafers and the like are cleaned using new scrubber-type apparatus in which measures are taken to compensate for differential cleaning of the central region of the wafer by: using rotary brushes having one or more non-contact portions arranged in the section thereof that faces the central region of the substrate, or toggling the relative position of the wafer and the rotary brushes, or directing cleaning fluid(s) preferentially towards the central region of the wafer. Another aspect of the invention provides scrubber-type cleaning apparatus in which the rotary brushes are replaced by rollers (110). A web of cleaning material (116) is interposed between each roller and the substrate. Various different webs of cleaning material may be used, e.g. a length of tissue, a continuous loop of cleaning material whose surface is reconditioned on each cleaning pass, adhesive material provided on a carrier tape, etc.
摘要翻译：使用新的洗涤器型装置清洁硅晶片等，其中采取措施来补偿晶片的中心区域的差别清洁：使用具有一个或多个非接触部分的旋转电刷，或者切换晶片和旋转刷的相对位置，或者将清洁流体优先地引向晶片的中心区域。本发明的另一方面提供了一种洗涤器型清洁装置，其中旋转刷由辊（110）代替。清洁材料网（116）插入在每个辊和基底之间。可以使用各种不同的清洁材料网，例如。组织长度，每个清洁通道上表面被修复的清洁材料的连续回路，设置在载带上的粘合材料等。

7. 发明授权

US07691756B2 Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and material for coupling a dielectric layer and a metal layer in a semiconductor device 有权
标题翻译：包括耦合电介质层和金属层的半导体器件，其制造方法以及用于在半导体器件中耦合电介质层和金属层的材料
公开(公告)号：US07691756B2
公开(公告)日：2010-04-06
申请号：US12065179
申请日：2006-09-01
申请人： Janos Farkas , Srdjan Kordic , Cindy Goldberg
发明人： Janos Farkas , Srdjan Kordic , Cindy Goldberg
IPC分类号： H01L21/31 , H01L23/58
CPC分类号： H01L21/3105 , C04B35/5603 , C04B35/565 , C04B2235/483 , C08G77/60 , C08L83/16 , C09D183/16 , H01L21/02063 , H01L21/02126 , H01L21/02164 , H01L21/02203 , H01L21/288 , H01L21/76801 , H01L21/7682 , H01L21/76838
摘要： A passivating coupling material for, on the one hand, passivating a dielectric layer in a semiconductor device, and on the other hand, for permitting or at least promoting liquid phase metal deposition thereon in a subsequent process step. In a particular example, the dielectric layer may be a porous material having a desirably decreased dielectric constant k, and the passivating coupling material provides steric shielding groups that substantially block the adsorption and uptake of ambient moisture into the porous dielectric layer. The passivating coupling materials also provides metal nucleation sides for promoting the deposition of a metal thereon in liquid phase, in comparison with metal deposition without the presence of the passivating coupling material. The use of a liquid phase metal deposition process facilitates the subsequent manufacture of the semiconductor device. In one example, the passivating coupling material has multiple Si atoms in its chemical composition, which desirably increases the thermal stability of the material.
摘要翻译：一种钝化耦合材料，一方面使半导体器件中的电介质层钝化，另一方面，用于在随后的工艺步骤中允许或至少促进液相金属沉积。在具体实例中，电介质层可以是具有理想的降低介电常数k的多孔材料，并且钝化耦合材料提供空间屏蔽基团，其基本上阻止环境水分吸附和吸收到多孔介电层中。与金属沉积相比，钝化耦合材料还提供金属成核侧，用于促进金属沉积在液相中，而不存在钝化偶联材料。使用液相金属沉积工艺有助于随后的半导体器件的制造。在一个实例中，钝化偶联材料在其化学组成中具有多个Si原子，这有利地增加了材料的热稳定性。

8. 发明申请

US20090094098A1 Promotion of a wine industry 审中-公开
标题翻译：推广葡萄酒产业
公开(公告)号：US20090094098A1
公开(公告)日：2009-04-09
申请号：US11906980
申请日：2007-10-04
申请人： Janos Farkas
发明人： Janos Farkas
IPC分类号： G06Q30/00
CPC分类号： G06Q30/02 , G06Q30/0236 , G06Q30/0241
摘要： Disclosed herein is a method and system for promoting a first wine industry of a first geographical location utilizing a plurality of advertising media. In a first embodiment, the plurality of advertising mediums is selected for promoting the first wine industry. The disclosed method links information of contribution of the first wine industry to a second wine industry. The information is publicized in a plurality of locations. In a second embodiment, the first wine industry is promoted utilizing a web portal. The web portal comprises a first set of information of the first wine industry and a second set of information of the second wine industry. The web portal establishes a virtual link between the first set of information and the second set of information. Further, revenue may be generated through the advertising mediums and targeted advertising.
摘要翻译：本文公开了一种利用多种广告媒体促进第一地理位置的第一葡萄酒业的方法和系统。在第一实施例中，多个广告媒体被选择用于促进第一葡萄酒行业。所公开的方法将第一葡萄酒行业的贡献信息与第二葡萄酒行业相关联。该信息在多个位置公开。在第二实施例中，利用门户网站来推广第一葡萄酒行业。该门户网站包括第一葡萄酒行业的第一组信息和第二葡萄酒行业的第二组信息。网络门户在第一组信息和第二组信息之间建立虚拟链路。此外，可以通过广告媒介和有针对性的广告来产生收入。

9. 发明授权

US07456105B1 CMP metal polishing slurry and process with reduced solids concentration 失效
标题翻译： CMP金属抛光浆料和固体浓度降低的工艺
公开(公告)号：US07456105B1
公开(公告)日：2008-11-25
申请号：US10321973
申请日：2002-12-17
申请人： Kevin Elliot Cooper , Jennifer Lynn Cooper , Janos Farkas , John C. Flake , Johannes Friedrich Groschopf , Yuri Solomentsev
发明人： Kevin Elliot Cooper , Jennifer Lynn Cooper , Janos Farkas , John C. Flake , Johannes Friedrich Groschopf , Yuri Solomentsev
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/3212 , C09G1/02
摘要： This disclosure describes a low particle concentration formulation for slurry which is particularly useful in continuous CMP polishing of copper layers during semiconductor wafer manufacture. The slurry is characterized by particle concentrations generally less than 2 wt %, and advantageously less than 1 wt %. In particular embodiments, where the particle concentration is in a range of 50 to 450 PPM, an 8-fold increase in polishing rate over reactive liquid slurries has been realized. Slurries thus formulated also achieve a reduction in defectivity and in the variations in planarity from wafer to wafer during manufacture, by improving the stability of polishing quality. The slurry formulations permit substantial cost savings over traditional 2-component, reactive liquid and fixed/bonded abrasive slurries. In addition the formulations provides an advantageous way during CMP to easily change the selectivity or rate of removal of one film material vs. another. Yet another use is to provide slurry “pulsing” as a means to activate bonded abrasive or fixed abrasive slurry technology.
摘要翻译：本公开内容描述了用于浆料的低颗粒浓度配方，其特别适用于半导体晶片制造过程中铜层的连续CMP抛光。浆料的特征在于颗粒浓度通常小于2重量％，有利地小于1重量％。在特定实施方案中，其中颗粒浓度在50至450PPM的范围内，抛光速率比反应性液体浆料高8倍。因此，通过提高抛光质量的稳定性，由此制成的浆料也可以在制造过程中实现缺陷率的降低和从晶片到晶片的平面度的变化。与传统的2组分反应性液体和固定/粘结的磨料浆料相比，浆料配方可节省大量成本。此外，制剂在CMP期间提供有利的方式以容易地改变一种膜材料相对于另一种膜材料的选择性或速率。另一种用途是提供浆料“脉冲”作为活化粘合磨料或固定磨料浆料技术的手段。

10. 发明申请

US20060294259A1 Method and device for audience monitoring on multicast capable networks 审中-公开
标题翻译：用于组播能力网络的观众监控的方法和设备
公开(公告)号：US20060294259A1
公开(公告)日：2006-12-28
申请号：US10595346
申请日：2003-10-24
申请人： Gergely Matefi , Janos Farkas , Tamas Elteto
发明人： Gergely Matefi , Janos Farkas , Tamas Elteto
IPC分类号： G06F15/16
CPC分类号： H04L12/2861 , H04H60/44 , H04L12/18 , H04L12/2856 , H04L43/08 , H04L67/22
摘要： The presented idea is a cheap solution for audience monitoring in multicast capable networks e.g. Ethernet, IP or UMTS. There is no need for user equipment in order to monitor the viewers' watching behavior. The measurement is done in the operator's network; therefore, there is no need to contact the end user. The idea can be applied in systems comprising multicast capable network contention server, network devices and user equipment. The content is carried in data packets to the end user. The network devices are remote manageable. The user can choose between several contents. The aim is to measure the user statistics regarding the chosen content. According to the invention it is enough to place a measurement host with our proposed software block in the network, which collects data from the network devices in the edge of the network periodically in order to make a content access survey.
摘要翻译：所提出的想法是用于在具有多播能力的网络中的观众监视的廉价解决方案。以太网，IP或UMTS。为了监视观众的观看行为，不需要用户设备。测量在操作员网络中完成; 因此，无需与最终用户联系。该思想可以应用于包括多播能力的网络争用服务器，网络设备和用户设备的系统中。内容以数据包传送给最终用户。网络设备可远程管理。用户可以选择多个内容。目的是衡量有关所选内容的用户统计信息。根据本发明，将测量主机与我们提出的软件块放置在网络中，从而周期性地从网络边缘的网络设备收集数据，以进行内容访问调查。

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