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    • 5. 发明授权
    • Vehicle canister
    • 车罐
    • US07488376B2
    • 2009-02-10
    • US11589383
    • 2006-10-30
    • Jin Kyu KimMin Yong ParkSang Hoon ParkJoon Won Min
    • Jin Kyu KimMin Yong ParkSang Hoon ParkJoon Won Min
    • B01D53/02F02M33/02
    • B01D53/0415B01D53/0438B01D2253/102B01D2259/4516F02M25/0854
    • The vehicle canister comprising: the first chamber filled with the active carbon and funneled with the tank port, where the evaporating gas is infused through and the second chamber filled with the active carbon and funneled with the atmosphere port and neighboring the first chamber via the isolation wall. Also, it involves the vehicle canister installed in the canister housing which has the absorption and desorption improver to improve the absorption and desorption efficiency with heat conduction with temperature change of the active carbon occurred during the absorption and desorption of evaporation gas infused into the canister housing. The absorption and desorption improver is composed with the first and the second absorption and desorption improver.
    • 所述车辆罐包括:所述第一室填充有活性炭并与所述罐口漏斗,其中所述蒸发气体通过所述蒸发气体填充,所述第二室填充有活性炭,并且与所述气氛端口漏斗并且经由所述隔离件邻近所述第一室 壁。 此外,它涉及安装在罐壳体中的车辆罐,其具有吸收和解吸改进剂,以在吸入和解吸输入到罐壳体中的蒸发气体中发生的活性炭的温度变化的热传导下提高吸收和解吸效率 。 吸收和解吸改进剂由第一和第二吸收和解吸改进剂组成。
    • 10. 发明授权
    • Method of forming an NPN device
    • 形成NPN器件的方法
    • US06492237B2
    • 2002-12-10
    • US09782820
    • 2001-02-12
    • Alexander KalnitskySang Hoon ParkRobert F. Scheer
    • Alexander KalnitskySang Hoon ParkRobert F. Scheer
    • H01L21331
    • H01L29/66287
    • A method of forming an NPN semiconductor device includes the steps of forming a collector region within a substrate, forming a base region over the collector region, and forming an oxide-nitride-oxide stack over the base region. Once these three structures are formed, an opening is created through the oxide-nitride-oxide stack to expose the top surface of the base region. Then, a doped polysilicon material is used to fill the opening and make electrical contact to the base region. The use of the oxide-nitride-oxide stack with appropriate etching of the opening eliminates the exposure of the base region to reactive ion etch environment typical of prior art methods for forming NPN semiconductor devices. As an option, after the opening of the oxide-nitride-oxide stack is formed, a local oxidation of silicon (LOCOS) and etched can be preformed to create oxide spacers to line the opening wall above the base region.
    • 形成NPN半导体器件的方法包括以下步骤:在衬底内形成集电极区域,在集电极区域上形成基极区域,并在基极区域上形成氧化物 - 氮化物 - 氧化物堆叠体。 一旦形成这三个结构,就通过氧化物 - 氧化物 - 氧化物堆叠形成一个开口,露出基极区域的顶面。 然后,使用掺杂多晶硅材料来填充开口并与基极区域电接触。 通过对开口的适当蚀刻来使用氧化物 - 氮化物 - 氧化物堆叠消除了基底区域对用于形成NPN半导体器件的现有技术方法的典型的反应离子蚀刻环境的曝光。 作为选择,在形成氧化物 - 氮化物 - 氧化物堆叠的打开之后,可以预先形成硅(LOCOS)的局部氧化并蚀刻以形成氧化物间隔物以使基部区域上方的开口壁成线。