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1. 发明授权

US5859462A Photogenerated carrier collection of a solid state image sensor array 失效
标题翻译：固态图像传感器阵列的光生载体收集
公开(公告)号：US5859462A
公开(公告)日：1999-01-12
申请号：US837077
申请日：1997-04-11
申请人： Timothy J. Tredwell , Teh H. Lee , James P. Lavine
发明人： Timothy J. Tredwell , Teh H. Lee , James P. Lavine
IPC分类号： H01L27/146 , H01L27/148 , H01L31/0352 , H01L31/00
CPC分类号： H01L27/14643 , H01L27/14806 , H01L31/035272
摘要： An image sensor comprising a semiconductor of a first conductivity type having a plurality of pixels formed thereon; and a region heavily doped with the first conductivity type semiconductor beneath the pixels formed such that there is a gradient formed within the semiconductor below the pixels that is capable of directing photogenerated electrons toward the pixels and away from the heavily doped region. The gradient is formed by having a more lightly doped layer formed upon the heavily doped layer and allowing a gradient to from around the junction of the two layers.
摘要翻译：一种图像传感器，包括其上形成有多个像素的第一导电类型的半导体; 以及在像素的下面重要掺杂有第一导电类型半导体的区域，使得在能够将光生电子导向像素并远离重掺杂区域的像素之下形成有半导体。该梯度是通过在重掺杂层上形成更轻的掺杂层并允许从两层的结的周围的梯度形成的。

2. 发明授权

US07973836B2 Camera, image sensor, and method for decreasing undesirable dark current 有权
标题翻译：相机，图像传感器和减少不良暗电流的方法
公开(公告)号：US07973836B2
公开(公告)日：2011-07-05
申请号：US10975865
申请日：2004-10-28
申请人： R. Daniel McGrath , Edward T. Nelson , Robert M. Guidash , Charles V. Stancampiano , James P. Lavine
发明人： R. Daniel McGrath , Edward T. Nelson , Robert M. Guidash , Charles V. Stancampiano , James P. Lavine
IPC分类号： H04N9/64 , H01L31/102
CPC分类号： H04N5/361 , H01L27/14601 , H01L27/14643
摘要： A method for lowering dark current in an image sensor pixel, the method includes the steps of providing a photosensitive area for receiving incident light which is converted into a charge; providing a gate for transferring charge from the photosensitive area; wherein the gate is held at a voltage which will accumulate majority carriers at a semiconductor-dielectric interface during integration for the photosensitive area. Alternatively, a potential profile can be provided under the gate to drain the dark current away from the photogeneration diffusion.
摘要翻译：一种用于降低图像传感器像素中的暗电流的方法，所述方法包括以下步骤：提供用于接收转换成电荷的入射光的光敏区域; 提供用于从感光区域传送电荷的门; 其中所述栅极被保持在将在用于感光区域的集成期间在半导体 - 介电界面处将累积多数载流子的电压。或者，可以在栅极下方提供电位分布以将暗电流排出远离光生扩散。

3. 发明授权

US07126638B2 Image sensor having multiple layers of dielectrics adjacent the photosensitive area for improved quantum efficiency 有权
标题翻译：图像传感器具有与感光区域相邻的多层电介质，以提高量子效率
公开(公告)号：US07126638B2
公开(公告)日：2006-10-24
申请号：US10142301
申请日：2002-05-09
申请人： Christopher Parks , James P. Lavine
发明人： Christopher Parks , James P. Lavine
IPC分类号： H04N5/225
CPC分类号： H04N5/335 , H01L27/14625 , H01L27/14627
摘要： An image sensor for capturing an image includes a photosensitive area for receiving incident light; a substance placed covering a portion of the photosensitive area which substance includes a first index of refraction; and a plurality of electrodes positioned adjacent the substance having a dielectric placed between a portion of the electrodes, which dielectric includes a second index of refraction lower than the first index of refraction.
摘要翻译：用于捕获图像的图像传感器包括用于接收入射光的光敏区域; 放置的物质覆盖感光区域的一部分，该物质包括第一折射率; 以及多个电极，其位于所述物质附近，所述电极位于所述电极的一部分之间，所述电介质包括比所述第一折射率低的第二折射率。

4. 发明授权

US4613402A Method of making edge-aligned implants and electrodes therefor 失效
标题翻译：制造边缘对准植入物和电极的方法
公开(公告)号：US4613402A
公开(公告)日：1986-09-23
申请号：US750204
申请日：1985-07-01
申请人： David L. Losee , James P. Lavine
发明人： David L. Losee , James P. Lavine
IPC分类号： H01L29/762 , H01L21/339 , H01L21/8234 , H01L27/14 , H01L27/148 , H01L29/76 , H01L29/772 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： H01L29/66954 , H01L21/823406
摘要： There is disclosed a process particularly suited for making CCD's. The process comprises the steps of(a) depositing a layer of conductive material above a semiconductor substrate;(b) forming a patterned mask above the conductive layer, the pattern exposing spaced-apart strip portions of the conductive layer;(c) ion-implanting dopant strips into the substrate through the conductive layer strip portions exposed by the patterned mask;(d) removing a portion of the mask but retaining the rest so as to expose the conductive layer over first portions of the substrate that contain an implanted dopant strip and over portions of the substrate adjacent to the first portions;(e) forming on the conductive layer between the retained mask portions, and above the implanted dopant strips, strips of a material resistant to an etchant for the conductive material;(f) removing the retained mask portions; and(g) etching away the conductive layer where the latter is not covered with the etchant-resistant material so as to leave conductive strips overlying the implanted strips.
摘要翻译：公开了一种特别适用于制造CCD的工艺。该方法包括以下步骤：（a）在半导体衬底上沉积导电材料层; （b）在所述导电层上方形成图案化掩模，所述图案暴露所述导电层的间隔开的条带部分; （c）通过由图案化掩模暴露的导电层条带部分将掺杂剂条带离子注入到衬底中; （d）去除所述掩模的一部分，但保留其余部分，以使所述导电层暴露于所述衬底的第一部分上，所述第一部分包含注入的掺杂剂条和所述衬底的与所述第一部分相邻的部分; （e）在所述保护的掩模部分之间和所述注入的掺杂剂条带之上的所述导电层上形成耐导电材料的蚀刻剂的材料条; （f）去除保留的掩模部分; 并且（g）蚀刻掉导电层，其中后者不被耐蚀刻材料覆盖，以便留下覆盖在植入条上的导电条。

5. 发明授权

US07776638B2 Two epitaxial layers to reduce crosstalk in an image sensor 有权
标题翻译：两个外延层，以减少图像传感器中的串扰
公开(公告)号：US07776638B2
公开(公告)日：2010-08-17
申请号：US12247248
申请日：2008-10-08
申请人： James P. Lavine , Eric G. Stevens
发明人： James P. Lavine , Eric G. Stevens
IPC分类号： H01L21/00
CPC分类号： H01L27/14654 , H01L27/14632 , H01L27/14687
摘要： An image sensor includes a substrate of a first conductivity type having an image area with a plurality of photosensitive sites, wherein a portion of the charge generated in response to light is collected in the pixel; and a subcollector of a second conductivity spanning the image area that collects another portion of the generated charge that would have otherwise diffused to adjacent photosensitive sites.
摘要翻译：图像传感器包括具有多个感光位置的图像区域的第一导电类型的衬底，其中响应于光产生的电荷的一部分被收集在像素中; 以及横跨图像区域的第二电导率的子集电极，其收集另外将产生的电荷的另一部分，否则其将扩散到相邻的光敏部位。

6. 发明授权

US07095066B2 Process for making a CMOS image sensor 有权
公开(公告)号：US07095066B2
公开(公告)日：2006-08-22
申请号：US10753246
申请日：2004-01-08
申请人： James P. Lavine
发明人： James P. Lavine
IPC分类号： H01L31/062
CPC分类号： H01L27/14687 , H01L27/14632
摘要： An image sensor includes a semi-conducting substrate having a photo-sensitive region and doping for forming a path to a charge-to-voltage mechanism; a dielectric spanning the substrate; and a semi-conducting layer, which is less than approximately 1 micrometer, spanning the dielectric which contains electrodes and circuit elements that control flow of charge.

7. 发明授权

US5583071A Image sensor with improved output region for superior charge transfer characteristics 失效
公开(公告)号：US5583071A
公开(公告)日：1996-12-10
申请号：US489599
申请日：1995-06-12
申请人： Eric G. Stevens , James P. Lavine
发明人： Eric G. Stevens , James P. Lavine
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H01L29/768 , H04N5/372 , H04N5/378 , H01L27/14
CPC分类号： H01L29/76816 , H01L27/14831
摘要： The new CCD output region provides a method of reducing the width of a wide CCD at its output to maintain a high sensitivity output node without sacrificing charge-transfer efficiency. A barrier region is shaped so the "channel width" of the CCD increases towards the input edge of the output gate. The barrier region, therefore, decreases in width towards the output end of the final CCD phase of a multi-phase device. Also, the channel width under the output gate decreases towards its output end in the direction of charge transfer towards the floating diffusion, or detection node. Since the "shaped" portion of the barrier region under the last CCD phase can be formed by the same process steps as the regular-shaped barrier regions, it is possible to form this structure without the requirement for additional masking and implant steps. The advantages of this structure over the prior art are improved charge-transfer characteristics without requiring additional process steps.

8. 发明授权

US5514886A Image sensor with improved output region for superior charge transfer characteristics 失效
标题翻译：图像传感器具有改进的输出区域，具有出色的电荷转移特性
公开(公告)号：US5514886A
公开(公告)日：1996-05-07
申请号：US374280
申请日：1995-01-18
申请人： Eric G. Stevens , James P. Lavine
发明人： Eric G. Stevens , James P. Lavine
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H01L29/768 , H04N5/372 , H04N5/378
CPC分类号： H01L29/76816 , H01L27/14831
摘要： The new CCD output region provides a method of reducing the width of a wide CCD at its output to maintain a high sensitivity output node without sacrificing charge-transfer efficiency. A barrier region is shaped so the "channel width" of the CCD increases towards the input edge of the output gate. The barrier region, therefore, decreases in width towards the output end of the final CCD phase of a multi-phase device. Also, the channel width under the output gate decreases towards its output end in the direction of charge transfer towards the floating diffusion, or detection node. Since the "shaped" portion of the barrier region under the last CCD phase can be formed by the same process steps as the regular-shaped barrier regions, it is possible to form this structure without the requirement for additional masking and implant steps. The advantages of this structure over the prior art are improved charge-transfer characteristics without requiring additional process steps.
摘要翻译：新的CCD输出区域提供了在其输出端减小宽CCD的宽度以维持高灵敏度输出节点而不牺牲电荷传输效率的方法。阻挡区域的形状使得CCD的“通道宽度”朝向输出门的输入边缘增加。因此，阻挡区域的宽度朝向多相设备的最终CCD相的输出端减小。此外，输出栅极下的沟道宽度朝向浮动扩散或检测节点的电荷转移方向朝向其输出端减小。由于最后CCD相位下的阻挡区域的“成形”部分可以通过与正常形状的阻挡区域相同的工艺步骤形成，所以可以形成这种结构，而不需要额外的掩模和注入步骤。与现有技术相比，该结构的优点是改进的电荷转移特性，而不需要额外的工艺步骤。

9. 发明申请

US20090035888A1 TWO EPITAXIAL LAYERS TO REDUCE CROSSTALK IN AN IMAGE SENSOR 有权
标题翻译：两个外延层，以减少图像传感器中的CROSSTALK
公开(公告)号：US20090035888A1
公开(公告)日：2009-02-05
申请号：US12247248
申请日：2008-10-08
申请人： James P. Lavine , Eric G. Stevens
发明人： James P. Lavine , Eric G. Stevens
IPC分类号： H01L21/00 , H01L27/00
CPC分类号： H01L27/14654 , H01L27/14632 , H01L27/14687
摘要： An image sensor includes a substrate of a first conductivity type having an image area with a plurality of photosensitive sites, wherein a portion of the charge generated in response to light is collected in the pixel; and a subcollector of a second conductivity spanning the image area that collects another portion of the generated charge that would have otherwise diffused to adjacent photosensitive sites.
摘要翻译：图像传感器包括具有多个感光位置的图像区域的第一导电类型的衬底，其中响应于光产生的电荷的一部分被收集在像素中; 以及横跨图像区域的第二电导率的子集电极，其收集另外将产生的电荷的另一部分，否则其将扩散到相邻的光敏部位。

10. 发明授权

US5314836A Method of making a single electrode level CCD 失效
标题翻译：制造单电极级CCD的方法
公开(公告)号：US5314836A
公开(公告)日：1994-05-24
申请号：US945073
申请日：1992-09-15
申请人： James P. Lavine
发明人： James P. Lavine
IPC分类号： H01L21/339 , H01L29/423
CPC分类号： H01L29/66954 , H01L29/42396 , Y10S148/111
摘要： The disclosure is directed to a method of forming a CCD with two sets of gate electrodes in a single layer of a conductive material. The method comprises forming a channel region in a body of a semiconductor material along a surface thereof and forming a layer of conductive material over and insulated from the surface of the body. A first masking layer is formed on the conductive layer and spaced strips of polycrystalline silicon are formed on the first masking layer. Using a portion of the spaces between the strips as a mask, impurities of a conductivity type opposite that of the channel region are embedded in the channel region to form spaced barrier regions along the channel region. A layer of silicon dioxide is formed over each of the strips and the spaces between the strips are filled with polycrystalline silicon. The portion of the silicon dioxide layer at one end of each of the strips is etched away to expose a portion of the first masking layer. The exposed portions of the first masking layer are etched away to form grooves through the first masking layer to the conductive layer. The portions of the conductive layer at the bottom of the grooves are then etched away to define the conductive layer into closely spaced gate electrodes.
摘要翻译：本公开涉及一种在导电材料的单层中形成具有两组栅电极的CCD的方法。该方法包括在半导体材料的主体中沿着其表面形成沟道区，并且在主体的表面上形成绝缘层和导电材料。在导电层上形成第一掩模层，并且在第一掩模层上形成间隔开的多晶硅条。使用条带之间的一部分空间作为掩模，导电类型与沟道区域相反的杂质被嵌入在沟道区域中，以形成沿沟道区域的间隔开的阻挡区域。在每个条上形成二氧化硅层，并且条之间的空间填充有多晶硅。每个条带的一端处的二氧化硅层的部分被蚀刻掉以露出第一掩模层的一部分。蚀刻掉第一掩模层的暴露部分，以形成通过第一掩模层到导电层的凹槽。然后蚀刻掉在凹槽底部的导电层的部分，以将导电层限定成紧密隔开的栅电极。

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