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1. 发明申请

US20090035888A1 TWO EPITAXIAL LAYERS TO REDUCE CROSSTALK IN AN IMAGE SENSOR 有权
标题翻译：两个外延层，以减少图像传感器中的CROSSTALK
公开(公告)号：US20090035888A1
公开(公告)日：2009-02-05
申请号：US12247248
申请日：2008-10-08
申请人： James P. Lavine , Eric G. Stevens
发明人： James P. Lavine , Eric G. Stevens
IPC分类号： H01L21/00 , H01L27/00
CPC分类号： H01L27/14654 , H01L27/14632 , H01L27/14687
摘要： An image sensor includes a substrate of a first conductivity type having an image area with a plurality of photosensitive sites, wherein a portion of the charge generated in response to light is collected in the pixel; and a subcollector of a second conductivity spanning the image area that collects another portion of the generated charge that would have otherwise diffused to adjacent photosensitive sites.
摘要翻译：图像传感器包括具有多个感光位置的图像区域的第一导电类型的衬底，其中响应于光产生的电荷的一部分被收集在像素中; 以及横跨图像区域的第二电导率的子集电极，其收集另外将产生的电荷的另一部分，否则其将扩散到相邻的光敏部位。

2. 发明申请

US20080138926A1 TWO EPITAXIAL LAYERS TO REDUCE CROSSTALK IN AN IMAGE SENSOR 审中-公开
标题翻译：两个外延层，以减少图像传感器中的CROSSTALK
公开(公告)号：US20080138926A1
公开(公告)日：2008-06-12
申请号：US11686540
申请日：2007-03-15
申请人： James P. Lavine , Eric G. Stevens
发明人： James P. Lavine , Eric G. Stevens
IPC分类号： H01L21/00
CPC分类号： H01L27/14654 , H01L27/14632 , H01L27/14687
摘要： An image sensor includes a substrate of a first conductivity type having an image area with a plurality of photosensitive sites, wherein a portion of the charge generated in response to light is collected in the pixel; and a subcollector of a second conductivity spanning the image area that collects another portion of the generated charge that would have otherwise diffused to adjacent photosensitive sites.
摘要翻译：图像传感器包括具有多个感光位置的图像区域的第一导电类型的衬底，其中响应于光产生的电荷的一部分被收集在像素中; 以及横跨图像区域的第二电导率的子集电极，其收集另外将产生的电荷的另一部分，否则其将扩散到相邻的光敏部位。

3. 发明授权

US06351001B1 CCD image sensor 失效
标题翻译： CCD图像传感器
公开(公告)号：US06351001B1
公开(公告)日：2002-02-26
申请号：US08633598
申请日：1996-04-17
申请人： Eric G. Stevens , James P. Lavine , Charles V. Stancampiano
发明人： Eric G. Stevens , James P. Lavine , Charles V. Stancampiano
IPC分类号： H01L27148
CPC分类号： H01L27/14843 , H01L27/14806 , H01L27/14887
摘要： A charge-coupled device (CCD) image sensor that preserves defect gettering characteristics having a vertical overflow drain (VOD) for blooming protection is provided in a structure that provides low voltage electronic shuttering. This structure reduces the electronic shutter voltage to ease the demands on off-chip support circuitry required to operate the CCD image sensor. The invention provides an improved pixel structure to reduce this voltage. Prior art difficulties are avoided by providing uniform, n-type layers of varying doping levels underneath the entire area of the CCD device. Combined with a lightly doped n-type substrate these layers provide low voltage electronic shutter operation.
摘要翻译：在提供低电压电子快门的结构中提供了一种保持具有用于防晕保护的垂直溢流漏极（VOD）的缺陷吸除特性的电荷耦合器件（CCD）图像传感器。该结构减少了电子快门电压，以便减少操作CCD图像传感器所需的片外支持电路的需求。本发明提供了一种改进的像素结构来降低该电压。通过在CCD器件的整个区域下方提供均匀的具有不同掺杂水平的n型层来避免现有技术的困难。结合轻掺杂的n型衬底，这些层提供低电压电子快门操作。

4. 发明授权

US06306676B1 Method of making self-aligned, high-enegry implanted photodiode for solid-state image sensors 失效
标题翻译：制造用于固态图像传感器的自对准高掺杂光电二极管的方法
公开(公告)号：US06306676B1
公开(公告)日：2001-10-23
申请号：US08628063
申请日：1996-04-04
申请人： Eric G. Stevens , Stephen L. Kosman , David L. Losee , James P. Lavine
发明人： Eric G. Stevens , Stephen L. Kosman , David L. Losee , James P. Lavine
IPC分类号： H01L2100
CPC分类号： H01L27/14812 , H01L27/14683 , H01L27/14843
摘要： A method and apparatus of making high energy implanted photodiode that is self aligned with the transfer gate, the high energy implant is defined by providing a substrate, or well, of a first conductivity type, defining a charge coupled device within the substrate, or well, such that gate electrode layers are allowed to exist over areas to contain photodiodes during construction of the charge coupled device, patterning a masking layer to block high energy implants such that openings in the masking layer are formed over the areas of the photodiodes, anisotropically etching down through the gate electrode over the photodiodes to the gate dielectric material, implanting photodiodes with high-energy ions of a second conductivity type opposite the first conductivity type and creating a pinned photodiode by employing a shallow implant of the first conductivity type. The apparatus made by this method yields a photodiode employing high energy ions to form the P/N junction that is self aligned with the transfer gate.
摘要翻译：一种制造与传输栅极自对准的高能量注入光电二极管的方法和装置，高能量注入是通过提供第一导电类型的衬底或阱来限定的，该衬底或阱限定衬底或阱内的电荷耦合器件，使得栅极电极层在电荷耦合器件的构造期间允许存在于包含光电二极管的区域上，构图掩模层以阻挡高能量注入，使得掩模层中的开口形成在光电二极管的区域上，各向异性蚀刻向下通过光电二极管上的栅电极到栅介电材料，用与第一导电类型相反的第二导电类型的高能离子注入光电二极管，并通过采用第一导电类型的浅埋入物产生钉扎光电二极管。通过该方法制造的装置产生使用高能离子的光电二极管，以形成与传输门自对准的P / N结。

5. 发明授权

US07776638B2 Two epitaxial layers to reduce crosstalk in an image sensor 有权
标题翻译：两个外延层，以减少图像传感器中的串扰
公开(公告)号：US07776638B2
公开(公告)日：2010-08-17
申请号：US12247248
申请日：2008-10-08
申请人： James P. Lavine , Eric G. Stevens
发明人： James P. Lavine , Eric G. Stevens
IPC分类号： H01L21/00
CPC分类号： H01L27/14654 , H01L27/14632 , H01L27/14687
摘要： An image sensor includes a substrate of a first conductivity type having an image area with a plurality of photosensitive sites, wherein a portion of the charge generated in response to light is collected in the pixel; and a subcollector of a second conductivity spanning the image area that collects another portion of the generated charge that would have otherwise diffused to adjacent photosensitive sites.
摘要翻译：图像传感器包括具有多个感光位置的图像区域的第一导电类型的衬底，其中响应于光产生的电荷的一部分被收集在像素中; 以及横跨图像区域的第二电导率的子集电极，其收集另外将产生的电荷的另一部分，否则其将扩散到相邻的光敏部位。

6. 发明授权

US5583071A Image sensor with improved output region for superior charge transfer characteristics 失效
公开(公告)号：US5583071A
公开(公告)日：1996-12-10
申请号：US489599
申请日：1995-06-12
申请人： Eric G. Stevens , James P. Lavine
发明人： Eric G. Stevens , James P. Lavine
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H01L29/768 , H04N5/372 , H04N5/378 , H01L27/14
CPC分类号： H01L29/76816 , H01L27/14831
摘要： The new CCD output region provides a method of reducing the width of a wide CCD at its output to maintain a high sensitivity output node without sacrificing charge-transfer efficiency. A barrier region is shaped so the "channel width" of the CCD increases towards the input edge of the output gate. The barrier region, therefore, decreases in width towards the output end of the final CCD phase of a multi-phase device. Also, the channel width under the output gate decreases towards its output end in the direction of charge transfer towards the floating diffusion, or detection node. Since the "shaped" portion of the barrier region under the last CCD phase can be formed by the same process steps as the regular-shaped barrier regions, it is possible to form this structure without the requirement for additional masking and implant steps. The advantages of this structure over the prior art are improved charge-transfer characteristics without requiring additional process steps.

7. 发明授权

US5514886A Image sensor with improved output region for superior charge transfer characteristics 失效
标题翻译：图像传感器具有改进的输出区域，具有出色的电荷转移特性
公开(公告)号：US5514886A
公开(公告)日：1996-05-07
申请号：US374280
申请日：1995-01-18
申请人： Eric G. Stevens , James P. Lavine
发明人： Eric G. Stevens , James P. Lavine
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H01L29/768 , H04N5/372 , H04N5/378
CPC分类号： H01L29/76816 , H01L27/14831
摘要： The new CCD output region provides a method of reducing the width of a wide CCD at its output to maintain a high sensitivity output node without sacrificing charge-transfer efficiency. A barrier region is shaped so the "channel width" of the CCD increases towards the input edge of the output gate. The barrier region, therefore, decreases in width towards the output end of the final CCD phase of a multi-phase device. Also, the channel width under the output gate decreases towards its output end in the direction of charge transfer towards the floating diffusion, or detection node. Since the "shaped" portion of the barrier region under the last CCD phase can be formed by the same process steps as the regular-shaped barrier regions, it is possible to form this structure without the requirement for additional masking and implant steps. The advantages of this structure over the prior art are improved charge-transfer characteristics without requiring additional process steps.
摘要翻译：新的CCD输出区域提供了在其输出端减小宽CCD的宽度以维持高灵敏度输出节点而不牺牲电荷传输效率的方法。阻挡区域的形状使得CCD的“通道宽度”朝向输出门的输入边缘增加。因此，阻挡区域的宽度朝向多相设备的最终CCD相的输出端减小。此外，输出栅极下的沟道宽度朝向浮动扩散或检测节点的电荷转移方向朝向其输出端减小。由于最后CCD相位下的阻挡区域的“成形”部分可以通过与正常形状的阻挡区域相同的工艺步骤形成，所以可以形成这种结构，而不需要额外的掩模和注入步骤。与现有技术相比，该结构的优点是改进的电荷转移特性，而不需要额外的工艺步骤。

8. 发明申请

US20120080731A1 PHOTODETECTOR ISOLATION IN IMAGE SENSORS 审中-公开
标题翻译：图像传感器中的光电隔离
公开(公告)号：US20120080731A1
公开(公告)日：2012-04-05
申请号：US12894262
申请日：2010-09-30
申请人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
发明人： Hung Q. Doan , Eric G. Stevens , Robert M. Guidash
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14607 , H01L27/1461 , H01L27/14645 , H01L27/14689
摘要： A first shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to a photodetector while a second shallow trench isolation region is disposed in the silicon semiconductor layer laterally adjacent to other electrical components in a pixel. The first and second shallow trench isolation regions each include a trench disposed in the silicon semiconductor layer that is filled with a dielectric material. An isolation layer having the second conductivity is disposed only along a portion of a bottom and only along a sidewall of the trench immediately adjacent to the photodetector. The isolation layer is not disposed along the other portion of the bottom and along the other sidewall of the trench adjacent the photodetector. The isolation layer is not disposed along the bottom and sidewalls of the trench adjacent to the other electrical components.
摘要翻译：第一浅沟槽隔离区域设置在与半导体器件的光电探测器侧向相邻的硅半导体层中，而第二浅沟槽隔离区域设置在与半导体层中的像素中的其它电气元件横向相邻的硅半导体层中。第一和第二浅沟槽隔离区域各自包括设置在硅半导体层中的填充有电介质材料的沟槽。具有第二导电性的隔离层仅沿着底部的一部分并且仅沿着与光电检测器紧邻的沟槽的侧壁设置。隔离层不沿着底部的另一部分并且沿着邻近光电检测器的沟槽的另一个侧壁设置。绝缘层不沿着与其它电气部件相邻的沟槽的底部和侧壁设置。

9. 发明申请

US20100148230A1 TRENCH ISOLATION REGIONS IN IMAGE SENSORS 审中-公开
标题翻译：图像传感器中的分离区域
公开(公告)号：US20100148230A1
公开(公告)日：2010-06-17
申请号：US12332407
申请日：2008-12-11
申请人： Eric G. Stevens , Hung Q. Doan
发明人： Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L21/762 , H01L31/112
CPC分类号： H01L27/14689 , H01L21/76224 , H01L27/1463
摘要： Trenches are formed in a substrate or layer and a solid source doped with one or more dopants is deposited over the image sensor such that the solid source fills the one or more trenches and is disposed on the surface of the substrate. The surface of the image sensor is then planarized so that the solid source remains only in the trenches. A thermal drive operation is performed to cause at least a portion of the one or more dopants in the solid source to diffuse into the portions of the substrate or layer that are immediately adjacent to and surround the sidewall and bottom surfaces of the trenches. The diffused dopant or dopants form passivation regions that passivate the interface between the substrate or layer and the sidewall and bottom surfaces of the trenches.
摘要翻译：沟槽形成在衬底或层中，并且掺杂有一种或多种掺杂剂的固体源沉积在图像传感器上，使得固体源填充一个或多个沟槽并且设置在衬底的表面上。然后将图像传感器的表面平坦化，使得固体源仅保留在沟槽中。执行热驱动操作以使固体源中的一种或多种掺杂剂的至少一部分扩散到紧邻和围绕沟槽的侧壁和底表面的衬底或层的部分。扩散掺杂剂或掺杂剂形成钝化区域，其钝化衬底或层与沟槽的侧壁和底表面之间的界面。

10. 发明申请

US20100140728A1 LATERAL OVERFLOW DRAIN AND CHANNEL STOP REGIONS IN IMAGE SENSORS 有权
公开(公告)号：US20100140728A1
公开(公告)日：2010-06-10
申请号：US12609257
申请日：2009-10-30
申请人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
发明人： Edmund K. Banghart , Eric G. Stevens , Hung Q. Doan
IPC分类号： H01L31/101 , H01L21/265
CPC分类号： H01L27/14887 , H01L27/14656 , H01L27/14674 , H01L27/14683 , H01L27/1485
摘要： A lateral overflow drain and a channel stop are fabricated using a double mask process. Each lateral overflow drain is formed within a respective channel stop. Due to the use of two mask layers, one edge of each lateral overflow drain is aligned, or substantially aligned, with an edge of a respective channel stop.

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