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1. 发明申请

US20160028004A1 NANOPOROUS METAL-OXIDE MEMORY 有权
标题翻译：纳米金属氧化物存储器
公开(公告)号：US20160028004A1
公开(公告)日：2016-01-28
申请号：US14809770
申请日：2015-07-27
申请人： James M. Tour , Gunuk Wang , Yang Yang
发明人： James M. Tour , Gunuk Wang , Yang Yang
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/08 , H01L27/2472 , H01L45/1233 , H01L45/146 , H01L45/1633
摘要： A nanoporous (NP) memory may include a non-porous layer and a nanoporous layer sandwiched between the bottom and top electrodes. The memory may be free of diodes, selectors, and/or transistors that may be necessary in other memories to mitigate crosstalk. The nanoporous material of the nanoporous layer may be a metal oxide, metal chalcogenide, or a combination thereof. Further, the memory may lack any additional components. Further, the memory may be free from requiring an electroformation process to allow switching between ON/OFF states.
摘要翻译：纳米孔（NP）存储器可以包括夹在底部和顶部电极之间的无孔层和纳米多孔层。存储器可能没有二极管，选择器和/或可能在其他存储器中需要以减轻串扰的晶体管。纳米多孔层的纳米多孔材料可以是金属氧化物，金属硫族化物或其组合。此外，存储器可能缺少任何附加组件。此外，存储器可以不需要电化过程以允许在ON / OFF状态之间切换。

2. 发明授权

US09831424B2 Nanoporous metal-oxide memory 有权
公开(公告)号：US09831424B2
公开(公告)日：2017-11-28
申请号：US14809770
申请日：2015-07-27
申请人： James M. Tour , Gunuk Wang , Yang Yang
发明人： James M. Tour , Gunuk Wang , Yang Yang
IPC分类号： H01L27/108 , H01L45/00 , H01L27/24
CPC分类号： H01L45/08 , H01L27/2472 , H01L45/1233 , H01L45/146 , H01L45/1633
摘要： A nanoporous (NP) memory may include a non-porous layer and a nanoporous layer sandwiched between the bottom and top electrodes. The memory may be free of diodes, selectors, and/or transistors that may be necessary in other memories to mitigate crosstalk. The nanoporous material of the nanoporous layer may be a metal oxide, metal chalcogenide, or a combination thereof. Further, the memory may lack any additional components. Further, the memory may be free from requiring an electroformation process to allow switching between ON/OFF states.

3. 发明申请

US20150162381A1 ADDRESSABLE SIOX MEMORY ARRAY WITH INCORPORATED DIODES 有权
标题翻译：可寻址的存储器阵列与入射二极管
公开(公告)号：US20150162381A1
公开(公告)日：2015-06-11
申请号：US14240973
申请日：2012-08-27
申请人： James M. Tour , Jun Yao , Jian Lin , Gunuk Wang , Krishna Palem
发明人： James M. Tour , Jun Yao , Jian Lin , Gunuk Wang , Krishna Palem
IPC分类号： H01L27/24 , H01L29/66 , H01L45/00
CPC分类号： H01L27/2463 , H01L27/2409 , H01L29/66136 , H01L29/66143 , H01L29/8611 , H01L29/8613 , H01L29/872 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1675
摘要： Various embodiments of the resistive memory cells and arrays discussed herein comprise: (1) a first electrode; (2) a second electrode; (3) resistive memory material; and (4) a diode. The resistive memory material is selected from the group consisting of SiOx, SiOxH, SiOxNy, SiOxNyH, SiOxCz, SiOxCzH, and combinations thereof, wherein each of x, y and z are equal or greater than 1 or equal or less than 2. The diode may be any suitable diode, such as n-p diodes, p-n diodes, and Schottky diodes.
摘要翻译：本文讨论的电阻式存储器单元和阵列的各种实施例包括：（1）第一电极; （2）第二电极; （3）电阻记忆材料; 和（4）二极管。电阻性存储材料选自SiOx，SiOxH，SiOxNy，SiOxNyH，SiOxCz，SiOxCzH及其组合，其中x，y和z各自等于或大于1或等于或小于2.二极管可以是任何合适的二极管，例如np二极管，pn二极管和肖特基二极管。

4. 发明申请

US20160276411A1 ADDRESSABLE SIOX MEMORY ARRAY WITH INCORPORATED DIODES 审中-公开
标题翻译：可寻址的存储器阵列与入射二极管
公开(公告)号：US20160276411A1
公开(公告)日：2016-09-22
申请号：US15171196
申请日：2016-06-02
申请人： James M. Tour , Jun Yao , Jian Lin , Gunuk Wang , Krishna Palem
发明人： James M. Tour , Jun Yao , Jian Lin , Gunuk Wang , Krishna Palem
IPC分类号： H01L27/24 , H01L29/872 , H01L29/861 , H01L45/00
CPC分类号： H01L27/2463 , H01L27/2409 , H01L29/66136 , H01L29/66143 , H01L29/8611 , H01L29/8613 , H01L29/872 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1675
摘要： Various embodiments of the resistive memory cells and arrays discussed herein comprise: (1) a first electrode; (2) a second electrode; (3) resistive memory material; and (4) a diode. The resistive memory material is selected from the group consisting of SiOx, SiOxNy, SiOxNyH, SiOxCz, SiOxCzH, and combinations thereof, wherein each of x, y and z are equal or greater than 1 or equal or less than 2. The diode may be any suitable diode, such as n-p diodes, p-n diodes, and Schottky diodes.
摘要翻译：本文讨论的电阻式存储器单元和阵列的各种实施例包括：（1）第一电极; （2）第二电极; （3）电阻记忆材料; 和（4）二极管。电阻性存储材料选自SiO x，SiO x N y，SiO x N y H，SiO x C z，SiO x C z H及其组合，其中x，y和z中的每一个等于或大于1或等于或小于2.二极管可以是任何合适的二极管，例如np二极管，pn二极管和肖特基二极管。

5. 发明授权

US09385163B2 Addressable SiOX memory array with incorporated diodes 有权
标题翻译：可寻址的SiOX存储器阵列，并入二极管
公开(公告)号：US09385163B2
公开(公告)日：2016-07-05
申请号：US14240973
申请日：2012-08-27
申请人： James M. Tour , Jun Yao , Jian Lin , Gunuk Wang , Krishna Palem
发明人： James M. Tour , Jun Yao , Jian Lin , Gunuk Wang , Krishna Palem
IPC分类号： H01L45/02 , H01L27/24 , H01L45/00 , H01L29/66 , H01L29/861 , H01L29/872
CPC分类号： H01L27/2463 , H01L27/2409 , H01L29/66136 , H01L29/66143 , H01L29/8611 , H01L29/8613 , H01L29/872 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/145 , H01L45/1608 , H01L45/1616 , H01L45/1625 , H01L45/1675
摘要： Various embodiments of the resistive memory cells and arrays discussed herein comprise: (1) a first electrode; (2) a second electrode; (3) resistive memory material; and (4) a diode. The resistive memory material is selected from the group consisting of SiOx, SiOxH, SiOxNy, SiOxNyH, SiOxCz, SiOxCzH, and combinations thereof, wherein each of x, y and z are equal to or greater than 1 and equal to or less than 2. The diode may be any suitable diode, such as n-p diodes, p-n diodes, and Schottky diodes.
摘要翻译：本文讨论的电阻式存储器单元和阵列的各种实施例包括：（1）第一电极; （2）第二电极; （3）电阻记忆材料; 和（4）二极管。电阻性存储材料选自SiO x，SiO x H，SiO x N y，SiO x N y H，SiO x C z，SiO x C z H及其组合，其中x，y和z各自等于或大于1且等于或小于2。二极管可以是任何合适的二极管，例如np二极管，pn二极管和肖特基二极管。

6. 发明申请

US20160379764A1 Ni(OH)2 NANOPOROUS FILMS AS ELECTRODES 审中-公开
标题翻译： Ni（OH）2纳米膜作为电极
公开(公告)号：US20160379764A1
公开(公告)日：2016-12-29
申请号：US15193529
申请日：2016-06-27
申请人： James M. Tour , Yang Yang
发明人： James M. Tour , Yang Yang
IPC分类号： H01G11/30 , H01M4/52 , H01M4/90 , H01G11/86 , H01M4/04 , C25D9/06 , H01G11/68 , H01G11/26 , H01M4/66 , H01M4/88
CPC分类号： H01G11/30 , C25D9/06 , C25D11/34 , H01B1/02 , H01G11/26 , H01G11/68 , H01G11/86 , H01M4/0442 , H01M4/0471 , H01M4/52 , H01M4/661 , H01M4/8817 , H01M4/8853 , H01M4/9016 , H01M8/0206 , H01M8/0232 , H01M2004/021
摘要： The present disclosure pertains to electrodes that include a nickel-based material and at least one porous region with a plurality of nickel hydroxide moieties on a surface of the nickel-based material. The nickel-based material may be a nickel foil in the form of a film. The porous region of the electrode may be directly associated with the surface of the nickel-based material. The nickel hydroxide moieties may be in crystalline form and embedded with the porous region. The electrodes of the present disclosure may be a component of an energy storage device, such as a capacitor. Additional embodiments of the present disclosure pertain to methods of fabricating the electrodes by anodizing a nickel-based material to form at least one porous region on a surface of the nickel-based material; and hydrothermally treating the porous region to form nickel hydroxide moieties associated with the porous region.
摘要翻译：本公开涉及包括镍基材料的电极和在镍基材料的表面上具有多个氢氧化镍部分的至少一个多孔区域。镍基材料可以是膜形式的镍箔。电极的多孔区域可以直接与镍基材料的表面相关联。氢氧化镍部分可以是结晶形式并且嵌入多孔区域。本公开的电极可以是诸如电容器的能量存储装置的部件。本公开的另外的实施例涉及通过阳极氧化镍基材料以在镍基材料的表面上形成至少一个多孔区域来制造电极的方法; 并水热处理多孔区以形成与多孔区相关联的氢氧化镍部分。

7. 发明授权

US10236135B2 Ni(OH)2 nanoporous films as electrodes 有权
公开(公告)号：US10236135B2
公开(公告)日：2019-03-19
申请号：US15193529
申请日：2016-06-27
申请人： James M. Tour , Yang Yang
发明人： James M. Tour , Yang Yang
IPC分类号： H01B1/02 , H01G11/30 , H01M4/66 , H01M4/52 , H01M4/90 , H01M4/88 , H01M4/04 , C25D9/06 , H01G11/68 , H01G11/26 , H01G11/86 , H01M8/0206 , H01M8/0232 , H01M4/02
摘要： The present disclosure pertains to electrodes that include a nickel-based material and at least one porous region with a plurality of nickel hydroxide moieties on a surface of the nickel-based material. The nickel-based material may be a nickel foil in the form of a film. The porous region of the electrode may be directly associated with the surface of the nickel-based material. The nickel hydroxide moieties may be in crystalline form and embedded with the porous region. The electrodes of the present disclosure may be a component of an energy storage device, such as a capacitor. Additional embodiments of the present disclosure pertain to methods of fabricating the electrodes by anodizing a nickel-based material to form at least one porous region on a surface of the nickel-based material; and hydrothermally treating the porous region to form nickel hydroxide moieties associated with the porous region.

8. 发明授权

US09493355B2 Solvent-based methods for production of graphene nanoribbons 有权
标题翻译：用于生产石墨烯纳米带的基于溶剂的方法
公开(公告)号：US09493355B2
公开(公告)日：2016-11-15
申请号：US14345016
申请日：2012-09-14
申请人： James M. Tour , Wei Lu , Bostjan Genorio
发明人： James M. Tour , Wei Lu , Bostjan Genorio
IPC分类号： C01B31/02 , C07C29/32 , C08F112/08 , C01B31/04
CPC分类号： C08F112/08 , B82Y30/00 , B82Y40/00 , C01B32/174 , C01B32/178 , C01B32/18 , C01B32/184 , C01B32/194 , C01B2202/06 , C01B2204/06 , C07C2/76 , C07C15/56 , C07C29/32 , C07C67/035 , C07C69/76 , D01F9/12 , Y10S977/734 , Y10S977/846 , Y10S977/961
摘要： The present invention provides methods of preparing functionalized graphene nanoribbons. Such methods include: (1) exposing a plurality of carbon nanotubes (CNTs) to an alkali metal source in the presence of an aprotic solvent to open them; and (2) exposing the opened CNTs to an electrophile to form functionalized graphene nanoribbons (GNRs). The methods may also include a step of exposing the opened CNTs to a protic solvent to quench any reactive species on them. Additional methods include preparing unfunctionalized GNRs by: (1) exposing a plurality of CNTs to an alkali metal source in the presence of an aprotic solvent to open them; and (2) exposing the opened CNTs to a protic solvent to form unfunctionalized GNRs.
摘要翻译：本发明提供了制备官能化石墨烯纳米带的方法。这些方法包括：（1）在非质子溶剂的存在下将多个碳纳米管（CNT）暴露于碱金属源以将其打开; 和（2）将开放的CNT暴露于亲电子试剂以形成官能化的石墨烯纳米带（GNR）。所述方法还可以包括将开放的CNT暴露于质子溶剂以淬灭其上的任何反应性物质的步骤。另外的方法包括：通过以下步骤制备未官能化的GNR：（1）在非质子溶剂存在下将多个CNT暴露于碱金属源以打开它们; 和（2）将开放的CNT暴露于质子溶剂以形成未官能化的GNR。

9. 发明授权

US09356151B2 Fabrication of graphene nanoribbons and nanowires using a meniscus as an etch mask 有权
标题翻译：使用弯月面作为蚀刻掩模制造石墨烯纳米带和纳米线
公开(公告)号：US09356151B2
公开(公告)日：2016-05-31
申请号：US14171642
申请日：2014-02-03
申请人： James M. Tour , Vera Abramova , Alexander Slesarev
发明人： James M. Tour , Vera Abramova , Alexander Slesarev
IPC分类号： H01L21/44 , H01L29/786 , C01B31/04 , H01L21/3065 , H01L21/311 , H01L21/3213 , H01L29/66 , B82Y40/00
CPC分类号： H01L29/78684 , B82Y40/00 , C01B32/182 , C01B32/194 , H01L21/3065 , H01L21/31116 , H01L21/32131 , H01L29/66742 , H01L29/78606 , H01L29/78696
摘要： In some embodiments, the present disclosure pertains to methods of preparing graphene nanoribbons from a graphene film associated with a meniscus, where the method comprises patterning the graphene film while the meniscus acts as a mask above a region of the graphene film, and where the patterning results in formation of graphene nanoribbons from the meniscus-masked region of the graphene film. Additional embodiments of the present disclosure pertain to methods of preparing wires from a film associated with a meniscus, where the method comprises patterning the film while the meniscus acts as a mask above a region of the film, and where the patterning results in formation of a wire from the meniscus-masked region of the film. Additional embodiments of the present disclosure pertain to chemical methods of preparing wires from water-reactive materials.
摘要翻译：在一些实施方案中，本公开涉及从与弯液面相关联的石墨烯膜制备石墨烯纳米带的方法，其中所述方法包括图案化所述石墨烯膜，同时所述弯液面用作所述石墨烯膜的区域上方的掩模，并且其中所述图案化导致从石墨烯膜的弯液面掩蔽区域形成石墨烯纳米带。本公开的另外的实施例涉及从与弯液面相关联的膜制备线的方法，其中所述方法包括图案化所述膜，同时所述弯月面用作所述膜的区域上方的掩模，并且其中所述图案化导致形成电线从弯月面掩盖的区域。本公开的另外的实施方案涉及从水反应性材料制备电线的化学方法。

10. 发明申请

US20150023858A1 REBAR HYBRID MATERIALS AND METHODS OF MAKING THE SAME 有权
标题翻译： REBAR混合材料及其制备方法
公开(公告)号：US20150023858A1
公开(公告)日：2015-01-22
申请号：US14335566
申请日：2014-07-18
申请人： James M. Tour , Zheng Yan , Zhiwei Peng , Robert H. Hauge , Yilun Li
发明人： James M. Tour , Zheng Yan , Zhiwei Peng , Robert H. Hauge , Yilun Li
IPC分类号： C01B31/36 , B29C39/00 , H01B1/04 , C01B31/04 , C01B31/02
CPC分类号： C01B32/956 , B29C39/003 , B29K2105/124 , B29K2995/0005 , B29L2007/00 , C01B21/064 , C01B32/178 , C01B32/18 , C01B32/184 , C01B32/186 , C01P2004/13
摘要： In some embodiments, the present disclosure pertains to methods of forming a reinforcing material by: (1) depositing a first material onto a catalyst surface; and (2) forming a second material on the catalyst surface, where the second material is derived from and associated with the first material. In some embodiments, the first material includes, without limitation, carbon nanotubes, graphene nanoribbons, boron nitride nanotubes, chalcogenide nanotubes, carbon onions, and combinations thereof. In some embodiments, the formed second material includes, without limitation, graphene, hexagonal boron nitride, chalcogenides, and combinations thereof. In additional embodiments, the methods of the present disclosure also include a step of separating the formed reinforcing material from the catalyst surface, and transferring the separated reinforcing material onto a substrate without the use of polymers. Additional embodiments of the present disclosure pertain to reinforcing materials formed by the aforementioned methods.
摘要翻译：在一些实施方案中，本公开涉及通过以下步骤形成增强材料的方法：（1）将第一材料沉积到催化剂表面上; 和（2）在所述催化剂表面上形成第二材料，其中所述第二材料衍生并与所述第一材料相关联。在一些实施方案中，第一材料包括但不限于碳纳米管，石墨烯纳米带，氮化硼纳米管，硫族化物纳米管，碳鎓和它们的组合。在一些实施例中，所形成的第二材料包括但不限于石墨烯，六方氮化硼，硫族化合物及其组合。在另外的实施方案中，本公开的方法还包括将形成的增强材料从催化剂表面分离并将分离的增强材料转移到基材上而不使用聚合物的步骤。本公开的另外的实施方案涉及通过上述方法形成的增强材料。

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