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1. 发明授权

US06856103B1 Voltage regulator for line powered linear and switching power supply 失效
标题翻译：用于线路电源线性和开关电源的稳压器
公开(公告)号：US06856103B1
公开(公告)日：2005-02-15
申请号：US10665049
申请日：2003-09-17
申请人： James E. Hudson , Thomas J. Mayer
发明人： James E. Hudson , Thomas J. Mayer
IPC分类号： H05B39/02 , H05B39/04 , G05F1/00
CPC分类号： H05B39/02 , H05B39/045 , Y02B20/142
摘要： The invented voltage regulator is a solid state low voltage regulator for quartz halogen or low voltage incandescent lamps and quartz halogen or low voltage incandescent lamp or LED array circuits wherein the volt regulator reduces a conventional mains power line source of, for example, a 115 volt AC to 480 V AC power source, to within a range of from 11.0 volts to 12.5 volts, preferably 11.6 volts, wherein the lamps, and LED arrays have consistent color, consistent light output, the lamp filaments and LED arrays are exposed to soft start operating currents and lamp and array life can be increased. The voltage regulator utilizes an AC rectifier circuit to provide a pulsing DC voltage, a DC voltage sensing circuit, a soft start oscillator circuit, an internal DC voltage oscillator reference circuit and an AC power line control circuit.
摘要翻译：本发明的电压调节器是用于石英卤素灯或低压白炽灯和石英卤素灯或低压白炽灯或LED阵列电路的固态低压调节器，其中电压调节器将常规电源线路源例如为115伏特 AC至480 V交流电源，范围为11.0 V至12.5 V，优选为11.6 V，其中灯和LED阵列具有一致的颜色，一致的光输出，灯丝和LED阵列暴露于软启动可以提高工作电流和灯管寿命。电压调节器利用AC整流电路提供脉冲直流电压，直流电压检测电路，软启动振荡电路，内部直流电压振荡器参考电路和交流电源线控制电路。

2. 发明授权

US4601702A Volumetric infusion actuator 失效
标题翻译：体积输液致动器
公开(公告)号：US4601702A
公开(公告)日：1986-07-22
申请号：US612384
申请日：1984-05-21
申请人： James E. Hudson
发明人： James E. Hudson
IPC分类号： A61M5/142 , A61M5/00
CPC分类号： A61M5/14224 , Y10S128/12 , Y10S128/13
摘要： A volumetric infusion actuator providing a slot means for receiving a valved cassette having exposed valve pads. An actuation means for automatically moving individual arms into and out of engagement with the valve pads according to a predetermined cycle which governs flow through the cassette.
摘要翻译：一种体积输注致动器，其提供槽装置，用于接收具有暴露的阀垫的带阀盒。一个致动装置，用于根据一个预定的循环自动地移动单独的臂进入和离开与这些阀垫的接合，该循环决定了通过盒的流动。

3. 发明申请

US20110251713A1 DEFECT ANALYZER 有权
标题翻译：缺陷分析仪
公开(公告)号：US20110251713A1
公开(公告)日：2011-10-13
申请号：US13166547
申请日：2011-06-22
申请人： JANET TESHIMA , Daniel E. Partin , James E. Hudson
发明人： JANET TESHIMA , Daniel E. Partin , James E. Hudson
IPC分类号： G06F19/00
CPC分类号： H01J37/28 , H01J37/302 , H01J37/304 , H01J37/3056 , H01J2237/24592 , H01J2237/2485 , H01J2237/2817 , H01J2237/31745 , H01L21/67253 , H01L21/67276
摘要： The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam. The position of the cut is based upon the analysis of the charged particle beam image. Ultimately, a surface exposed by the charged particle beam cut is imaged to obtain additional information about the defect.
摘要翻译：本发明提供了用于分析诸如半导体晶片的物体中的缺陷的方法，装置和系统。在一个实施例中，其提供了在半导体制造设备中制造期间表征半导体晶片中的缺陷的方法。该方法包括以下动作。检查半导体晶片以定位缺陷。然后将与定位的缺陷相对应的位置存储在缺陷文件中。使用来自缺陷文件的信息，双电荷粒子束系统被自动导航到附近的缺陷位置。自动识别缺陷，得到缺陷的带电粒子束图像。然后分析带电粒子束图像以表征缺陷。然后确定配方以进一步分析缺陷。然后自动执行配方以使用带电粒子束切割缺陷的一部分。切割的位置是基于带电粒子束图像的分析。最终，通过带电粒子束切割暴露的表面被成像以获得关于缺陷的附加信息。

4. 发明申请

US20090230303A1 DEFECT ANALYZER 有权
标题翻译：缺陷分析仪
公开(公告)号：US20090230303A1
公开(公告)日：2009-09-17
申请号：US12348771
申请日：2009-01-05
申请人： Janet Teshima , Daniel E. Partin , James E. Hudson
发明人： Janet Teshima , Daniel E. Partin , James E. Hudson
IPC分类号： G21K7/00 , G01N23/00
CPC分类号： H01J37/28 , H01J37/302 , H01J37/304 , H01J37/3056 , H01J2237/24592 , H01J2237/2485 , H01J2237/2817 , H01J2237/31745 , H01L21/67253 , H01L21/67276
摘要： The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam. The position of the cut is based upon the analysis of the charged particle beam image. Ultimately, a surface exposed by the charged particle beam cut is imaged to obtain additional information about the defect.
摘要翻译：本发明提供了用于分析诸如半导体晶片的物体中的缺陷的方法，装置和系统。在一个实施例中，其提供了在半导体制造设备中制造期间表征半导体晶片中的缺陷的方法。该方法包括以下动作。检查半导体晶片以定位缺陷。然后将与定位的缺陷相对应的位置存储在缺陷文件中。使用来自缺陷文件的信息，双电荷粒子束系统被自动导航到附近的缺陷位置。自动识别缺陷，得到缺陷的带电粒子束图像。然后分析带电粒子束图像以表征缺陷。然后确定配方以进一步分析缺陷。然后自动执行配方以使用带电粒子束切割缺陷的一部分。切割的位置是基于带电粒子束图像的分析。最终，通过带电粒子束切割暴露的表面被成像以获得关于缺陷的附加信息。

5. 发明申请

US20100219327A1 High speed quantum efficiency measurement apparatus utilizing solid state lightsource 有权
标题翻译：利用固态光源的高速量子效率测量装置
公开(公告)号：US20100219327A1
公开(公告)日：2010-09-02
申请号：US12660688
申请日：2010-03-01
申请人： Mark A. Arbore , David L. Klein , Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
发明人： Mark A. Arbore , David L. Klein , Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
IPC分类号： G01J1/44 , G01N21/55
CPC分类号： G01N21/55 , G01N21/59 , G01N2021/556 , G01N2201/0627 , G01N2201/0691 , H02S50/10
摘要： The present invention provides a high-speed Quantum Efficiency (QE) measurement device that includes at least one device under test (DUT), at least one conditioned light source with a less than 50 nm bandwidth, where a portion of the conditioned light source is monitored. Delivery optics are provided to direct the conditioned light to the DUT, a controller drives the conditioned light source in a time dependent operation, and at least one reflectance measurement assembly receives a portion of the conditioned light reflected from the DUT. A time-resolved measurement device includes a current measurement device and/or a voltage measurement device disposed to resolve a current and/or voltage generated in the DUT by each conditioned light source, where a sufficiently programmed computer determines and outputs a QE value for each DUT according to an incident intensity of at least one wavelength of from the conditioned light source and the time-resolved measurement.
摘要翻译：本发明提供了一种高速量子效率（QE）测量装置，其包括至少一个被测器件（DUT），至少一个具有小于50nm带宽的调节光源，其中调节光源的一部分是监控。提供输送光学器件以将经调节的光引导到DUT，控制器以时间相关的操作来驱动调节光源，并且至少一个反射测量组件接收从DUT反射的经调节的光的一部分。时间分辨的测量装置包括电流测量装置和/或电压测量装置，其被设置为通过每个调节光源来分辨在DUT中产生的电流和/或电压，其中充分编程的计算机确定并输出每个 DUT根据来自调节光源的至少一个波长的入射强度和时间分辨测量。

6. 发明申请

US20100201374A1 High speed detection of shunt defects in photovoltaic and optoelectronic devices 有权
标题翻译：光电和光电器件分流缺陷的高速检测
公开(公告)号：US20100201374A1
公开(公告)日：2010-08-12
申请号：US12658489
申请日：2010-02-08
申请人： Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
发明人： Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
IPC分类号： G01R31/04
CPC分类号： G01R31/2656 , G01N21/66 , H02S50/10
摘要： The current invention provides a shunt defect detection device that includes a device under test (DUT) that is fixedly held by a thermally isolating mount, a power source disposed to provide a directional bias condition to the DUT, a probe disposed to provide a localized power to the DUT from the power source, an emission detector disposed to measure a temporal emission from the DUT when in the directional bias condition, where the measured temporal emission is output as temporal data from the emission detector to a suitably programmed computer that uses the temporal data to determine a heating rate of the DUT and is disposed to estimate an overheat risk level of the DUT, where an output from the computer designates the DUT a pass status, an uncertain status, a fail status or a process to bin status according to the overheat risk level.
摘要翻译：本发明提供了一种并联缺陷检测装置，其包括由热隔离安装座固定地保持的被测器件（DUT），被设置为向DUT提供定向偏置状态的电源，设置成提供局部电源的探针从发射检测器输出到来自电源的DUT，发射检测器被设置成在定向偏置条件下测量来自DUT的时间发射，其中测量的时间发射作为时间数据从发射检测器输出到使用时间的适当编程的计算机数据以确定DUT的加热速率，并且被设置为估计DUT的过热风险水平，其中来自计算机的输出指定DUT通过状态，不确定状态，故障状态或根据过热风险等级。

7. 发明授权

US07103505B2 Defect analyzer 有权
公开(公告)号：US07103505B2
公开(公告)日：2006-09-05
申请号：US10706304
申请日：2003-11-12
申请人： Janet Teshima , Daniel E. Partin , James E. Hudson
发明人： Janet Teshima , Daniel E. Partin , James E. Hudson
IPC分类号： G06F19/00
CPC分类号： H01J37/28 , H01J37/302 , H01J37/304 , H01J37/3056 , H01J2237/24592 , H01J2237/2485 , H01J2237/2817 , H01J2237/31745 , H01L21/67253 , H01L21/67276
摘要： The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam. The position of the cut is based upon the analysis of the charged particle beam image. Ultimately, a surface exposed by the charged particle beam cut is imaged to obtain additional information about the defect.

8. 发明授权

US08249828B2 Defect analyzer 有权
标题翻译：缺陷分析仪
公开(公告)号：US08249828B2
公开(公告)日：2012-08-21
申请号：US13166547
申请日：2011-06-22
申请人： Janet Teshima , Daniel E. Partin , James E. Hudson
发明人： Janet Teshima , Daniel E. Partin , James E. Hudson
IPC分类号： G01R27/28
CPC分类号： H01J37/28 , H01J37/302 , H01J37/304 , H01J37/3056 , H01J2237/24592 , H01J2237/2485 , H01J2237/2817 , H01J2237/31745 , H01L21/67253 , H01L21/67276
摘要： The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam. The position of the cut is based upon the analysis of the charged particle beam image. Ultimately, a surface exposed by the charged particle beam cut is imaged to obtain additional information about the defect.
摘要翻译：本发明提供了用于分析诸如半导体晶片的物体中的缺陷的方法，装置和系统。在一个实施例中，其提供了在半导体制造设备中制造期间表征半导体晶片中的缺陷的方法。该方法包括以下动作。检查半导体晶片以定位缺陷。然后将与定位的缺陷相对应的位置存储在缺陷文件中。使用来自缺陷文件的信息，双电荷粒子束系统被自动导航到附近的缺陷位置。自动识别缺陷，得到缺陷的带电粒子束图像。然后分析带电粒子束图像以表征缺陷。然后确定配方以进一步分析缺陷。然后自动执行配方以使用带电粒子束切割缺陷的一部分。切割的位置是基于带电粒子束图像的分析。最终，通过带电粒子束切割暴露的表面被成像以获得关于缺陷的附加信息。

9. 发明授权

US5043662A Method and apparatus for producing a uniform magnetic field in a test sample 失效
标题翻译：在测试样品中产生均匀磁场的方法和装置
公开(公告)号：US5043662A
公开(公告)日：1991-08-27
申请号：US603039
申请日：1990-10-25
申请人： James E. Hudson , Kenneth B. Lamb
发明人： James E. Hudson , Kenneth B. Lamb
IPC分类号： G01N27/84
CPC分类号： G01N27/84
摘要： An apparatus for producing a uniform magnetic field in a test sample having an angled end during a magnetic particle test procedure, includes a conductive, angled fixture having a contact surface and an overall shape corresponding to that of the angled end of the test sample, so that when a pulsed current is passed through the blade, the resulting uniform magnetic field permits detection of defect indications in the angled end.
摘要翻译：一种用于在磁粉测试过程中具有倾斜端的测试样品中产生均匀磁场的装置包括具有与测试样品的倾斜端相对应的接触表面和整体形状的导电成角度的固定装置，因此当脉冲电流通过叶片时，所得到的均匀磁场允许检测成角度端的缺陷指示。

10. 发明授权

US08299416B2 High speed quantum efficiency measurement apparatus utilizing solid state lightsource 有权
标题翻译：利用固态光源的高速量子效率测量装置
公开(公告)号：US08299416B2
公开(公告)日：2012-10-30
申请号：US12660688
申请日：2010-03-01
申请人： Mark A. Arbore , David L Klein , Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
发明人： Mark A. Arbore , David L Klein , Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
IPC分类号： G01N21/64 , G01J1/58
CPC分类号： G01N21/55 , G01N21/59 , G01N2021/556 , G01N2201/0627 , G01N2201/0691 , H02S50/10
摘要： The present invention provides a high-speed Quantum Efficiency (QE) measurement device that includes at least one device under test (DUT), at least one conditioned light source with a less than 50 nm bandwidth, where a portion of the conditioned light source is monitored. Delivery optics are provided to direct the conditioned light to the DUT, a controller drives the conditioned light source in a time dependent operation, and at least one reflectance measurement assembly receives a portion of the conditioned light reflected from the DUT. A time-resolved measurement device includes a current measurement device and/or a voltage measurement device disposed to resolve a current and/or voltage generated in the DUT by each conditioned light source, where a sufficiently programmed computer determines and outputs a QE value for each DUT according to an incident intensity of at least one wavelength of from the conditioned light source and the time-resolved measurement.
摘要翻译：本发明提供了一种高速量子效率（QE）测量装置，其包括至少一个被测器件（DUT），至少一个具有小于50nm带宽的调节光源，其中调节光源的一部分是监控。提供输送光学器件以将经调节的光引导到DUT，控制器以时间相关的操作来驱动调节光源，并且至少一个反射测量组件接收从DUT反射的经调节的光的一部分。时间分辨的测量装置包括电流测量装置和/或电压测量装置，其被设置为通过每个调节光源来分辨在DUT中产生的电流和/或电压，其中充分编程的计算机确定并输出每个 DUT根据来自调节光源的至少一个波长的入射强度和时间分辨测量。

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