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1. 发明申请

US20130277573A1 FUNCTIONALIZED CARBON MEMBRANES 审中-公开
标题翻译：功能性碳膜
公开(公告)号：US20130277573A1
公开(公告)日：2013-10-24
申请号：US13978177
申请日：2012-01-06
申请人： John M. Miller , Janet Teshima , James E. Hutchison
发明人： John M. Miller , Janet Teshima , James E. Hutchison
IPC分类号： H01J37/20
CPC分类号： B05D1/185 , B05D3/044 , G01N1/2813 , H01J37/20 , H01J37/26
摘要： Embodiments provide electron-conducting, electron-transparent substrates that are chemically derivatized (e.g., functionalized) to enhance and facilitate the deposition of nanoscale materials thereupon, including both hard and soft nanoscale materials. In various embodiments, the substrates may include an electron-conducting mesh support, for example, a carbon, copper, nickel, molybdenum, beryllium, gold, silicon, GaAs, or oxide (e.g., SiO2, TiO2, ITO, or Al2O3) support, or a combination thereof, having one or more apertures. In various embodiments, the mesh support may be coated with an electron conducting, electron transparent carbon film membrane that has been chemically derivatized to promote adhesion and/or affinity for various materials, including hard inorganic materials and soft materials, such as polymers and biological molecules.
摘要翻译：实施例提供了化学衍生化（例如官能化）的电子传导的电子透明基底，以增强和促进纳米尺度材料的沉积，包括硬和软纳米尺度材料。在各种实施例中，基底可以包括例如碳，铜，镍，钼，铍，金，硅，GaAs或氧化物（例如SiO 2，TiO 2，ITO或Al 2 O 3）载体的电子传导网支撑，或其组合，具有一个或多个孔。在各种实施例中，网状支撑体可以涂覆有电子传导的电子透明碳膜膜，其被化学衍生化以促进对各种材料的粘附和/或亲和力，包括硬无机材料和软材料，例如聚合物和生物分子。

2. 发明授权

US08249828B2 Defect analyzer 有权
标题翻译：缺陷分析仪
公开(公告)号：US08249828B2
公开(公告)日：2012-08-21
申请号：US13166547
申请日：2011-06-22
申请人： Janet Teshima , Daniel E. Partin , James E. Hudson
发明人： Janet Teshima , Daniel E. Partin , James E. Hudson
IPC分类号： G01R27/28
CPC分类号： H01J37/28 , H01J37/302 , H01J37/304 , H01J37/3056 , H01J2237/24592 , H01J2237/2485 , H01J2237/2817 , H01J2237/31745 , H01L21/67253 , H01L21/67276
摘要： The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam. The position of the cut is based upon the analysis of the charged particle beam image. Ultimately, a surface exposed by the charged particle beam cut is imaged to obtain additional information about the defect.
摘要翻译：本发明提供了用于分析诸如半导体晶片的物体中的缺陷的方法，装置和系统。在一个实施例中，其提供了在半导体制造设备中制造期间表征半导体晶片中的缺陷的方法。该方法包括以下动作。检查半导体晶片以定位缺陷。然后将与定位的缺陷相对应的位置存储在缺陷文件中。使用来自缺陷文件的信息，双电荷粒子束系统被自动导航到附近的缺陷位置。自动识别缺陷，得到缺陷的带电粒子束图像。然后分析带电粒子束图像以表征缺陷。然后确定配方以进一步分析缺陷。然后自动执行配方以使用带电粒子束切割缺陷的一部分。切割的位置是基于带电粒子束图像的分析。最终，通过带电粒子束切割暴露的表面被成像以获得关于缺陷的附加信息。

3. 发明申请

US20070067131A1 Defect analyzer 有权
标题翻译：缺陷分析仪
公开(公告)号：US20070067131A1
公开(公告)日：2007-03-22
申请号：US11497565
申请日：2006-08-01
申请人： Janet Teshima , Daniel Partin , James Hudson
发明人： Janet Teshima , Daniel Partin , James Hudson
IPC分类号： G01R27/28
CPC分类号： H01J37/28 , H01J37/302 , H01J37/304 , H01J37/3056 , H01J2237/24592 , H01J2237/2485 , H01J2237/2817 , H01J2237/31745 , H01L21/67253 , H01L21/67276
摘要： The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam. The position of the cut is based upon the analysis of the charged particle beam image. Ultimately, a surface exposed by the charged particle beam cut is imaged to obtain additional information about the defect.
摘要翻译：本发明提供了用于分析诸如半导体晶片的物体中的缺陷的方法，装置和系统。在一个实施例中，其提供了在半导体制造设备中制造期间表征半导体晶片中的缺陷的方法。该方法包括以下动作。检查半导体晶片以定位缺陷。然后将与定位的缺陷相对应的位置存储在缺陷文件中。使用来自缺陷文件的信息，双电荷粒子束系统被自动导航到附近的缺陷位置。自动识别缺陷，得到缺陷的带电粒子束图像。然后分析带电粒子束图像以表征缺陷。然后确定配方以进一步分析缺陷。然后自动执行配方以使用带电粒子束切割缺陷的一部分。切割的位置是基于带电粒子束图像的分析。最终，通过带电粒子束切割暴露的表面被成像以获得关于缺陷的附加信息。

4. 发明授权

US07987072B2 Defect analyzer 有权
标题翻译：缺陷分析仪
公开(公告)号：US07987072B2
公开(公告)日：2011-07-26
申请号：US12348771
申请日：2009-01-05
申请人： Janet Teshima , Daniel E. Partin , James E. Hudson
发明人： Janet Teshima , Daniel E. Partin , James E. Hudson
IPC分类号： G01R27/28
CPC分类号： H01J37/28 , H01J37/302 , H01J37/304 , H01J37/3056 , H01J2237/24592 , H01J2237/2485 , H01J2237/2817 , H01J2237/31745 , H01L21/67253 , H01L21/67276
摘要： The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam. The position of the cut is based upon the analysis of the charged particle beam image. Ultimately, a surface exposed by the charged particle beam cut is imaged to obtain additional information about the defect.
摘要翻译：本发明提供了用于分析诸如半导体晶片的物体中的缺陷的方法，装置和系统。在一个实施例中，其提供了在半导体制造设备中制造期间表征半导体晶片中的缺陷的方法。该方法包括以下动作。检查半导体晶片以定位缺陷。然后将与定位的缺陷相对应的位置存储在缺陷文件中。使用来自缺陷文件的信息，双电荷粒子束系统被自动导航到附近的缺陷位置。自动识别缺陷，得到缺陷的带电粒子束图像。然后分析带电粒子束图像以表征缺陷。然后确定配方以进一步分析缺陷。然后自动执行配方以使用带电粒子束切割缺陷的一部分。切割的位置是基于带电粒子束图像的分析。最终，通过带电粒子束切割暴露的表面被成像以获得关于缺陷的附加信息。

5. 发明授权

US07474986B2 Defect analyzer 有权
标题翻译：缺陷分析仪
公开(公告)号：US07474986B2
公开(公告)日：2009-01-06
申请号：US11497565
申请日：2006-08-01
申请人： Janet Teshima , Daniel E. Partin , James E. Hudson
发明人： Janet Teshima , Daniel E. Partin , James E. Hudson
IPC分类号： G01R27/28
CPC分类号： H01J37/28 , H01J37/302 , H01J37/304 , H01J37/3056 , H01J2237/24592 , H01J2237/2485 , H01J2237/2817 , H01J2237/31745 , H01L21/67253 , H01L21/67276
摘要： The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam. The position of the cut is based upon the analysis of the charged particle beam image. Ultimately, a surface exposed by the charged particle beam cut is imaged to obtain additional information about the defect.
摘要翻译：本发明提供了用于分析诸如半导体晶片的物体中的缺陷的方法，装置和系统。在一个实施例中，其提供了在半导体制造设备中制造期间表征半导体晶片中的缺陷的方法。该方法包括以下动作。检查半导体晶片以定位缺陷。然后将与定位的缺陷相对应的位置存储在缺陷文件中。使用来自缺陷文件的信息，双电荷粒子束系统被自动导航到附近的缺陷位置。自动识别缺陷，得到缺陷的带电粒子束图像。然后分析带电粒子束图像以表征缺陷。然后确定配方以进一步分析缺陷。然后自动执行配方以使用带电粒子束切割缺陷的一部分。切割的位置是基于带电粒子束图像的分析。最终，通过带电粒子束切割暴露的表面被成像以获得关于缺陷的附加信息。

6. 发明申请

US20110251713A1 DEFECT ANALYZER 有权
标题翻译：缺陷分析仪
公开(公告)号：US20110251713A1
公开(公告)日：2011-10-13
申请号：US13166547
申请日：2011-06-22
申请人： JANET TESHIMA , Daniel E. Partin , James E. Hudson
发明人： JANET TESHIMA , Daniel E. Partin , James E. Hudson
IPC分类号： G06F19/00
CPC分类号： H01J37/28 , H01J37/302 , H01J37/304 , H01J37/3056 , H01J2237/24592 , H01J2237/2485 , H01J2237/2817 , H01J2237/31745 , H01L21/67253 , H01L21/67276
摘要： The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam. The position of the cut is based upon the analysis of the charged particle beam image. Ultimately, a surface exposed by the charged particle beam cut is imaged to obtain additional information about the defect.
摘要翻译：本发明提供了用于分析诸如半导体晶片的物体中的缺陷的方法，装置和系统。在一个实施例中，其提供了在半导体制造设备中制造期间表征半导体晶片中的缺陷的方法。该方法包括以下动作。检查半导体晶片以定位缺陷。然后将与定位的缺陷相对应的位置存储在缺陷文件中。使用来自缺陷文件的信息，双电荷粒子束系统被自动导航到附近的缺陷位置。自动识别缺陷，得到缺陷的带电粒子束图像。然后分析带电粒子束图像以表征缺陷。然后确定配方以进一步分析缺陷。然后自动执行配方以使用带电粒子束切割缺陷的一部分。切割的位置是基于带电粒子束图像的分析。最终，通过带电粒子束切割暴露的表面被成像以获得关于缺陷的附加信息。

7. 发明申请

US20090230303A1 DEFECT ANALYZER 有权
标题翻译：缺陷分析仪
公开(公告)号：US20090230303A1
公开(公告)日：2009-09-17
申请号：US12348771
申请日：2009-01-05
申请人： Janet Teshima , Daniel E. Partin , James E. Hudson
发明人： Janet Teshima , Daniel E. Partin , James E. Hudson
IPC分类号： G21K7/00 , G01N23/00
CPC分类号： H01J37/28 , H01J37/302 , H01J37/304 , H01J37/3056 , H01J2237/24592 , H01J2237/2485 , H01J2237/2817 , H01J2237/31745 , H01L21/67253 , H01L21/67276
摘要： The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam. The position of the cut is based upon the analysis of the charged particle beam image. Ultimately, a surface exposed by the charged particle beam cut is imaged to obtain additional information about the defect.
摘要翻译：本发明提供了用于分析诸如半导体晶片的物体中的缺陷的方法，装置和系统。在一个实施例中，其提供了在半导体制造设备中制造期间表征半导体晶片中的缺陷的方法。该方法包括以下动作。检查半导体晶片以定位缺陷。然后将与定位的缺陷相对应的位置存储在缺陷文件中。使用来自缺陷文件的信息，双电荷粒子束系统被自动导航到附近的缺陷位置。自动识别缺陷，得到缺陷的带电粒子束图像。然后分析带电粒子束图像以表征缺陷。然后确定配方以进一步分析缺陷。然后自动执行配方以使用带电粒子束切割缺陷的一部分。切割的位置是基于带电粒子束图像的分析。最终，通过带电粒子束切割暴露的表面被成像以获得关于缺陷的附加信息。

8. 发明授权

US07103505B2 Defect analyzer 有权
公开(公告)号：US07103505B2
公开(公告)日：2006-09-05
申请号：US10706304
申请日：2003-11-12
申请人： Janet Teshima , Daniel E. Partin , James E. Hudson
发明人： Janet Teshima , Daniel E. Partin , James E. Hudson
IPC分类号： G06F19/00
CPC分类号： H01J37/28 , H01J37/302 , H01J37/304 , H01J37/3056 , H01J2237/24592 , H01J2237/2485 , H01J2237/2817 , H01J2237/31745 , H01L21/67253 , H01L21/67276
摘要： The present invention provides methods, devices, and systems for analyzing defects in an object such as a semiconductor wafer. In one embodiment, it provides a method of characterizing defects in semiconductor wafers during fabrication in a semiconductor fabrication facility. This method comprises the following actions. The semiconductor wafers are inspected to locate defects. Locations corresponding to the located defects are then stored in a defect file. A dual charged-particle beam system is automatically navigated to the vicinity defect location using information from the defect file. The defect is automatically identified and a charged particle beam image of the defect is then obtained. The charged particle beam image is then analyzed to characterize the defect. A recipe is then determined for further analysis of the defect. The recipe is then automatically executed to cut a portion of the defect using a charged particle beam. The position of the cut is based upon the analysis of the charged particle beam image. Ultimately, a surface exposed by the charged particle beam cut is imaged to obtain additional information about the defect.

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