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1. 发明授权

US08299416B2 High speed quantum efficiency measurement apparatus utilizing solid state lightsource 有权
标题翻译：利用固态光源的高速量子效率测量装置
公开(公告)号：US08299416B2
公开(公告)日：2012-10-30
申请号：US12660688
申请日：2010-03-01
申请人： Mark A. Arbore , David L Klein , Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
发明人： Mark A. Arbore , David L Klein , Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
IPC分类号： G01N21/64 , G01J1/58
CPC分类号： G01N21/55 , G01N21/59 , G01N2021/556 , G01N2201/0627 , G01N2201/0691 , H02S50/10
摘要： The present invention provides a high-speed Quantum Efficiency (QE) measurement device that includes at least one device under test (DUT), at least one conditioned light source with a less than 50 nm bandwidth, where a portion of the conditioned light source is monitored. Delivery optics are provided to direct the conditioned light to the DUT, a controller drives the conditioned light source in a time dependent operation, and at least one reflectance measurement assembly receives a portion of the conditioned light reflected from the DUT. A time-resolved measurement device includes a current measurement device and/or a voltage measurement device disposed to resolve a current and/or voltage generated in the DUT by each conditioned light source, where a sufficiently programmed computer determines and outputs a QE value for each DUT according to an incident intensity of at least one wavelength of from the conditioned light source and the time-resolved measurement.
摘要翻译：本发明提供了一种高速量子效率（QE）测量装置，其包括至少一个被测器件（DUT），至少一个具有小于50nm带宽的调节光源，其中调节光源的一部分是监控。提供输送光学器件以将经调节的光引导到DUT，控制器以时间相关的操作来驱动调节光源，并且至少一个反射测量组件接收从DUT反射的经调节的光的一部分。时间分辨的测量装置包括电流测量装置和/或电压测量装置，其被设置为通过每个调节光源来分辨在DUT中产生的电流和/或电压，其中充分编程的计算机确定并输出每个 DUT根据来自调节光源的至少一个波长的入射强度和时间分辨测量。

2. 发明申请

US20100219327A1 High speed quantum efficiency measurement apparatus utilizing solid state lightsource 有权
标题翻译：利用固态光源的高速量子效率测量装置
公开(公告)号：US20100219327A1
公开(公告)日：2010-09-02
申请号：US12660688
申请日：2010-03-01
申请人： Mark A. Arbore , David L. Klein , Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
发明人： Mark A. Arbore , David L. Klein , Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
IPC分类号： G01J1/44 , G01N21/55
CPC分类号： G01N21/55 , G01N21/59 , G01N2021/556 , G01N2201/0627 , G01N2201/0691 , H02S50/10
摘要： The present invention provides a high-speed Quantum Efficiency (QE) measurement device that includes at least one device under test (DUT), at least one conditioned light source with a less than 50 nm bandwidth, where a portion of the conditioned light source is monitored. Delivery optics are provided to direct the conditioned light to the DUT, a controller drives the conditioned light source in a time dependent operation, and at least one reflectance measurement assembly receives a portion of the conditioned light reflected from the DUT. A time-resolved measurement device includes a current measurement device and/or a voltage measurement device disposed to resolve a current and/or voltage generated in the DUT by each conditioned light source, where a sufficiently programmed computer determines and outputs a QE value for each DUT according to an incident intensity of at least one wavelength of from the conditioned light source and the time-resolved measurement.
摘要翻译：本发明提供了一种高速量子效率（QE）测量装置，其包括至少一个被测器件（DUT），至少一个具有小于50nm带宽的调节光源，其中调节光源的一部分是监控。提供输送光学器件以将经调节的光引导到DUT，控制器以时间相关的操作来驱动调节光源，并且至少一个反射测量组件接收从DUT反射的经调节的光的一部分。时间分辨的测量装置包括电流测量装置和/或电压测量装置，其被设置为通过每个调节光源来分辨在DUT中产生的电流和/或电压，其中充分编程的计算机确定并输出每个 DUT根据来自调节光源的至少一个波长的入射强度和时间分辨测量。

3. 发明申请

US20100201374A1 High speed detection of shunt defects in photovoltaic and optoelectronic devices 有权
标题翻译：光电和光电器件分流缺陷的高速检测
公开(公告)号：US20100201374A1
公开(公告)日：2010-08-12
申请号：US12658489
申请日：2010-02-08
申请人： Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
发明人： Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
IPC分类号： G01R31/04
CPC分类号： G01R31/2656 , G01N21/66 , H02S50/10
摘要： The current invention provides a shunt defect detection device that includes a device under test (DUT) that is fixedly held by a thermally isolating mount, a power source disposed to provide a directional bias condition to the DUT, a probe disposed to provide a localized power to the DUT from the power source, an emission detector disposed to measure a temporal emission from the DUT when in the directional bias condition, where the measured temporal emission is output as temporal data from the emission detector to a suitably programmed computer that uses the temporal data to determine a heating rate of the DUT and is disposed to estimate an overheat risk level of the DUT, where an output from the computer designates the DUT a pass status, an uncertain status, a fail status or a process to bin status according to the overheat risk level.
摘要翻译：本发明提供了一种并联缺陷检测装置，其包括由热隔离安装座固定地保持的被测器件（DUT），被设置为向DUT提供定向偏置状态的电源，设置成提供局部电源的探针从发射检测器输出到来自电源的DUT，发射检测器被设置成在定向偏置条件下测量来自DUT的时间发射，其中测量的时间发射作为时间数据从发射检测器输出到使用时间的适当编程的计算机数据以确定DUT的加热速率，并且被设置为估计DUT的过热风险水平，其中来自计算机的输出指定DUT通过状态，不确定状态，故障状态或根据过热风险等级。

4. 发明授权

US08278937B2 High speed detection of shunt defects in photovoltaic and optoelectronic devices 有权
标题翻译：光电和光电器件分流缺陷的高速检测
公开(公告)号：US08278937B2
公开(公告)日：2012-10-02
申请号：US12658489
申请日：2010-02-08
申请人： Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
发明人： Leonid A. Vasilyev , John M. Schmidt , James E. Hudson , Gregory S. Horner
IPC分类号： G01R31/02
CPC分类号： G01R31/2656 , G01N21/66 , H02S50/10
摘要： The current invention provides a shunt defect detection device that includes a device under test (DUT) that is fixedly held by a thermally isolating mount, a power source disposed to provide a directional bias condition to the DUT, a probe disposed to provide a localized power to the DUT from the power source, an emission detector disposed to measure a temporal emission from the DUT when in the directional bias condition, where the measured temporal emission is output as temporal data from the emission detector to a suitably programmed computer that uses the temporal data to determine a heating rate of the DUT and is disposed to estimate an overheat risk level of the DUT, where an output from the computer designates the DUT a pass status, an uncertain status, a fail status or a process to bin status according to the overheat risk level.
摘要翻译：本发明提供了一种并联缺陷检测装置，其包括由热隔离安装座固定地保持的被测器件（DUT），被设置为向DUT提供定向偏置状态的电源，设置成提供局部电源的探针从发射检测器输出到来自电源的DUT，发射检测器被设置成在定向偏置条件下测量来自DUT的时间发射，其中测量的时间发射作为时间数据从发射检测器输出到使用时间的适当编程的计算机数据以确定DUT的加热速率，并且被设置为估计DUT的过热风险水平，其中来自计算机的输出指定DUT通过状态，不确定状态，故障状态或根据过热风险等级。

5. 发明授权

US06399944B1 Measurement of film thickness by inelastic electron scattering 有权
标题翻译：通过非弹性电子散射测量膜厚度
公开(公告)号：US06399944B1
公开(公告)日：2002-06-04
申请号：US09350701
申请日：1999-07-09
申请人： Leonid A. Vasilyev , Charles E. Bryson, III , Robert Linder , Sergey Borodyansky , Dmitri Klyachko
发明人： Leonid A. Vasilyev , Charles E. Bryson, III , Robert Linder , Sergey Borodyansky , Dmitri Klyachko
IPC分类号： H01J37073
CPC分类号： G01B15/02
摘要： A method and apparatus for measuring the thickness of a thin coating, having a thickness on the order of 1 to 10 nm, of one material formed over a substrate of another material of significantly different atomic number, for example, a carbon coating on a ferromagnetic substrate. A primary radiation source, for example, of electrons or X-ray, creates low-energy secondary electrons in the substrate. The intensity of inelastically scattered electrons generally increases with film thickness. The secondary electron spectrum measured for a test sample is compared with the spectra for a plurality of similar reference samples of the same set of compositions, and a test thickness is thereby determined. The method may be practice on conventional electron spectrometers with the addition of some programmed analysis. Various techniques are available for extracting the data and comparing the test and reference data.
摘要翻译：用于测量厚度在1至10nm数量级的薄涂层的厚度的方法和装置，其形成在具有显着不同原子序数的另一材料的基底上形成的一种材料，例如在铁磁性材料上的碳涂层基质。主要的辐射源，例如电子或X射线，在衬底中产生低能二次电子。非弹性散射的电子的强度通常随膜厚增加。将测试样品测量的二次电子光谱与同一组合物组合的多个相似参考样品的光谱进行比较，由此确定测试厚度。该方法可以在常规电子分光计上进行实践，并加上一些程序化分析。各种技术可用于提取数据并比较测试和参考数据。

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