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    • 2. 发明授权
    • Method to adjust multilayer film stress induced deformation of optics
    • 调整多层膜应力诱导光学变形的方法
    • US6134049A
    • 2000-10-17
    • US160264
    • 1998-09-25
    • Eberhard A. SpillerPaul B. MirkarimiClaude MontcalmSasa BajtJames A. Folta
    • Eberhard A. SpillerPaul B. MirkarimiClaude MontcalmSasa BajtJames A. Folta
    • B32B7/02B32B15/04G02B1/10G02B5/08G02B5/26G02B5/28G03F1/22G03F7/20F21V9/04
    • G03F7/70958G02B5/0875G02B5/0891G02B5/26G03F1/22G21K1/062
    • Stress compensating systems that reduces/compensates stress in a multilayer without loss in reflectivity, while reducing total film thickness compared to the earlier buffer-layer approach. The stress free multilayer systems contain multilayer systems with two different material combinations of opposite stress, where both systems give good reflectivity at the design wavelengths. The main advantage of the multilayer system design is that stress reduction does not require the deposition of any additional layers, as in the buffer layer approach. If the optical performance of the two systems at the design wavelength differ, the system with the poorer performance is deposited first, and then the system with better performance last, thus forming the top of the multilayer system. The components for the stress reducing layer are chosen among materials that have opposite stress to that of the preferred multilayer reflecting stack and simultaneously have optical constants that allow one to get good reflectivity at the design wavelength. For a wavelength of 13.4 nm, the wavelength presently used for extreme ultraviolet (EUV) lithography, Si and Be have practically the same optical constants, but the Mo/Si multilayer has opposite stress than the Mo/Be multilayer. Multilayer systems of these materials have practically identical reflectivity curves. For example, stress free multilayers can be formed on a substrate using Mo/Be multilayers in the bottom of the stack and Mo/Si multilayers at the top of the stack, with the switch-over point selected to obtain zero stress. In this multilayer system, the switch-over point is at about the half point of the total thickness of the stack, and for the Mo/Be--Mo/Si system, there may be 25 deposition periods Mo/Be to 20 deposition periods Mo/Si.
    • 应力补偿系统减少/补偿多层中的应力,而不损失反射率,同时减少与较早的缓冲层方法相比的总膜厚度。 无应力的多层系统包含具有两种不同材料组合的相反应力的多层系统,其中两个系统在设计波长处给出良好的反射率。 多层系统设计的主要优点是减压不需要任何附加层的沉积,如缓冲层方法一样。 如果两个系统的设计波长的光学性能不同,首先沉积性能较差的系统,然后再次具有更好性能的系统,从而形成多层系统的顶部。 应力降低层的组件选自具有与优选的多层反射叠层相反的应力的材料,并且同时具有允许在设计波长处获得良好的反射率的光学常数。 对于13.4nm的波长,目前用于极紫外(EUV)光刻的波长Si和Be实际上具有相同的光学常数,但Mo / Si多层具有与Mo / Be多层相反的应力。 这些材料的多层系统具有几乎相同的反射曲线。 例如,可以在堆叠底部使用Mo / Be多层和堆叠顶部的Mo / Si多层在衬底上形成无应力多层,选择切换点以获得零应力。 在该多层体系中,切换点为堆叠总厚度的大约一半,对于Mo / Be-Mo / Si系统,可能存在25个沉积周期Mo / Be至20个沉积周期Mo / Si。
    • 4. 发明授权
    • Method and system for producing sputtered thin films with sub-angstrom thickness uniformity or custom thickness gradients
    • 用于制造具有亚埃厚度均匀性或定制厚度梯度的溅射薄膜的方法和系统
    • US06524449B1
    • 2003-02-25
    • US09454673
    • 1999-12-03
    • James A. FoltaClaude MontcalmChristopher Walton
    • James A. FoltaClaude MontcalmChristopher Walton
    • C23C1600
    • C23C14/54C23C14/543C23C14/545G02B1/10
    • A method and system for producing a thin film with highly uniform (or highly accurate custom graded) thickness on a flat or graded substrate (such as concave or convex optics), by sweeping the substrate across a vapor deposition source with controlled (and generally, time-varying) velocity. In preferred embodiments, the method includes the steps of measuring the source flux distribution (using a test piece that is held stationary while exposed to the source), calculating a set of predicted film thickness profiles, each film thickness profile assuming the measured flux distribution and a different one of a set of sweep velocity modulation recipes, and determining from the predicted film thickness profiles a sweep velocity modulation recipe which is adequate to achieve a predetermined thickness profile. Aspects of the invention include a practical method of accurately measuring source flux distribution, and a computer-implemented method employing a graphical user interface to facilitate convenient selection of an optimal or nearly optimal sweep velocity modulation recipe to achieve a desired thickness profile on a substrate. Preferably, the computer implements an algorithm in which many sweep velocity function parameters (for example, the speed at which each substrate spins about its center as it sweeps across the source) can be varied or set to zero.
    • 通过将衬底穿过气相沉积源(通常在其上,通常用于生产具有高度均匀(或高度准确的定制分级)厚度的薄膜的方法和系统,该平板或渐变衬底(例如凹形或凸形光学器件) 时变)速度。 在优选实施例中,该方法包括以下步骤:测量源通量分布(使用在暴露于源时保持静止的测试件),计算一组预测的膜厚度分布,每个薄膜厚度分布假设测量的磁通分布;以及 一组扫描速度调制配方中的不同的一个,并且从预测的膜厚度分布确定足以实现预定厚度分布的扫描速度调制配方。 本发明的方面包括精确测量源通量分布的实用方法,以及采用图形用户界面的计算机实现的方法,以促进方便地选择最佳或近似最佳的扫描速度调制配方以在衬底上实现期望的厚度分布。 优选地,计算机实现了一种算法,其中许多扫描速度函数参数(例如,每个基板绕其中心旋转,当其扫过源时的速度)可以被改变或设置为零。
    • 9. 发明授权
    • Method and system using power modulation and velocity modulation producing sputtered thin films with sub-angstrom thickness uniformity or custom thickness gradients
    • 使用功率调制和速度调制的方法和系统产生具有亚埃厚度均匀性或定制厚度梯度的溅射薄膜
    • US06668207B1
    • 2003-12-23
    • US09710957
    • 2000-11-13
    • Claude MontcalmJames Allen FoltaChristopher Charles Walton
    • Claude MontcalmJames Allen FoltaChristopher Charles Walton
    • G06F1900
    • C23C14/54C23C14/543C23C14/545G02B1/10
    • A method and system for determining a source flux modulation recipe for achieving a selected thickness profile of a film to be deposited (e.g., with highly uniform or highly accurate custom graded thickness) over a flat or curved substrate (such as concave or convex optics) by exposing the substrate to a vapor deposition source operated with time-varying flux distribution as a function of time. Preferably, the source is operated with time-varying power applied thereto during each sweep of the substrate to achieve the time-varying flux distribution as a function of time. Preferably, the method includes the steps of measuring the source flux distribution (using a test piece held stationary while exposed to the source with the source operated at each of a number of different applied power levels), calculating a set of predicted film thickness profiles, each film thickness profile assuming the measured flux distribution and a different one of a set of source flux modulation recipes, and determining from the predicted film thickness profiles a source flux modulation recipe which is adequate to achieve a predetermined thickness profile. Aspects of the invention include a computer-implemented method employing a graphical user interface to facilitate convenient selection of an optimal or nearly optimal source flux modulation recipe to achieve a desired thickness profile on a substrate. The method enables precise modulation of the deposition flux to which a substrate is exposed to provide a desired coating thickness distribution.
    • 一种用于确定源通量调制配方的方法和系统,用于在平坦或弯曲的衬底(例如凹或凸光学器件)上实现要沉积的膜的选定厚度分布(例如,具有高度均匀或高精度的定制分级厚度) 通过将衬底暴露于作为时间的函数的随时间变化的通量分布操作的气相沉积源。 优选地,在衬底的每次扫描期间,源施加到其上的时变功率,以实现作为时间的函数的时变通量分布。 优选地,该方法包括以下步骤:测量源极通量分布(使用在多个不同施加的功率水平的每一个处操作的源在暴露于源的情况下保持静止的测试片),计算一组预测的膜厚度分布, 每个膜厚度轮廓假设测量的通量分布和一组源通量调节配方中的不同的一个,并且根据预测的膜厚度分布确定足以实现预定厚度分布的源极通量调制配方。 本发明的方面包括采用图形用户界面的计算机实现的方法,以便于方便地选择最佳或接近最佳的源通量调节配方以在衬底上实现期望的厚度分布。 该方法能够精确地调制衬底所暴露的沉积通量,从而提供所需的涂层厚度分布。