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1. 发明授权

US07033729B2 Light absorbent agent polymer for organic anti-reflective coating and preparation method and organic anti-reflective coating composition comprising the same 失效
标题翻译：用于有机抗反射涂层的光吸收剂聚合物及其制备方法和包含其的有机抗反射涂料组合物
公开(公告)号：US07033729B2
公开(公告)日：2006-04-25
申请号：US10962867
申请日：2004-10-12
申请人： Jae-chang Jung , Keun Kyu Kong , Seok-kyun Kim
发明人： Jae-chang Jung , Keun Kyu Kong , Seok-kyun Kim
IPC分类号： G03C1/73 , G03C1/835 , G03F7/20 , G03F7/36 , C08F34/02
CPC分类号： G03F7/091 , C08F232/08 , Y10S430/106 , Y10S430/122 , Y10S430/126
摘要： Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused reflection of lower film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.
摘要翻译：公开了一种用于有机抗反射涂层的光吸收剂聚合物，其可以防止下膜层或基材的扩散反射，并减少由光致抗蚀剂本身的厚度变化引起的驻波，从而增加光致抗蚀剂图案的均匀性用于通过在制造半导体器件的工艺中使用193nm的ArF来形成用于光刻的光刻胶的超精细图案及其制备方法。此外，本发明公开了一种有机抗反射涂层组合物，其包含用于有机抗反射涂层的光吸收剂聚合物和使用该涂料组合物的图案形成方法。

2. 发明授权

US06984482B2 Top-coating composition for photoresist and process for forming fine pattern using the same 失效
标题翻译：用于光致抗蚀剂的顶涂组合物和使用其形成精细图案的方法
公开(公告)号：US06984482B2
公开(公告)日：2006-01-10
申请号：US10174497
申请日：2002-06-17
申请人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Hyeong Soo Kim , Jin Soo Kim , Cha Won Koh , Sung Eun Hong , Geun Su Lee , Min Ho Jung , Ki Ho Baik
IPC分类号： G03F7/11 , G03F7/09 , G03F7/00
CPC分类号： G03F7/11 , G03F7/0045
摘要： The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.
摘要翻译：本发明提供一种包覆组合物，其包含用于涂覆光致抗蚀剂组合物以提供垂直光致抗蚀剂图案的碱性化合物。

3. 发明授权

US06787285B2 Pattern width slimming-inhibiting method of photoresist pattern using photoresist composition containing thermal acid generator 失效
标题翻译：使用含有热酸发生剂的光致抗蚀剂组合物的光刻胶图案的图案宽度减肥抑制方法
公开(公告)号：US06787285B2
公开(公告)日：2004-09-07
申请号：US10006633
申请日：2001-12-05
申请人： Keun Kyu Kong , Gyu Dong Park , Jae Chang Jung , Ki Soo Shin
发明人： Keun Kyu Kong , Gyu Dong Park , Jae Chang Jung , Ki Soo Shin
IPC分类号： G03F7004
CPC分类号： G03F7/40 , G03F7/0395 , Y10S430/115 , Y10S430/122 , Y10S430/143 , Y10S430/168
摘要： A pattern width slimming-inhibiting method of photoresist pattern using photoresist composition containing thermal acid generator. When the formed pattern is heated, a thermal generator generates acid during the heating process, and a cross-linking reaction occurs to photoresist compositions, thereby preventing pattern width slimming due to SEM-beam for CD measurement.
摘要翻译：使用含有热酸发生剂的光致抗蚀剂组合物的光致抗蚀剂图案的图案宽度减肥抑制方法。当形成的图案被加热时，热发生器在加热过程中产生酸，并且光致抗蚀剂组合物发生交联反应，从而防止由于用于CD测量的SEM束的图案宽度减小。

4. 发明授权

US6165672A Maleimide or alicyclic olefin-based monomers, copolymer resin of these monomers and photoresist using the resin 有权
标题翻译：马来酰亚胺或脂环族烯烃基单体，这些单体的共聚物树脂和使用树脂的光致抗蚀剂
公开(公告)号：US6165672A
公开(公告)日：2000-12-26
申请号：US152976
申请日：1998-09-14
申请人： Jae Chang Jung , Keun Kyu Kong , Cheol Kyu Bok , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Cheol Kyu Bok , Ki Ho Baik
IPC分类号： C07D207/36 , C07C51/347 , C07C61/29 , C07C69/753 , C07D207/44 , C07D207/448 , C07D207/452 , C08F222/06 , C08F222/40 , C08F232/04 , C08F232/08 , G03F7/004 , G03F7/039 , G03C1/73 , C08L35/00 , C08L45/00 , H01L29/12
CPC分类号： C07D207/452 , C08F222/40 , C08F232/04 , G03F7/0045 , G03F7/039 , Y10S430/106 , Y10S430/115
摘要： The present invention relates to a novel maleimide- or alicyclic olefin-based monomer, a copolymer resin of these monomers and a photoresist using the copolymer resin. The maleimide-introduced copolymer resin according to the present invention can easily be copolymerized with alicyclic olefin unit, has a physical property capable of enduring in 2.38% TMAH developer and increases adhesion of ArF or KrF photoresist. The photoresist film using a copolymer resin according to the present invention can be applied to highly integrate semiconductor devices.
摘要翻译：本发明涉及新型的马来酰亚胺或脂环族烯烃基单体，这些单体的共聚物树脂和使用该共聚物树脂的光致抗蚀剂。根据本发明的马来酰亚胺引入共聚物树脂可以容易地与脂环烯烃单元共聚，具有能够在2.38％TMAH显影剂中耐受的物理性能，并增加ArF或KrF光致抗蚀剂的粘附性。使用根据本发明的共聚物树脂的光致抗蚀剂膜可以应用于高度集成的半导体器件。

5. 发明申请

US20080176047A1 Liquid Composition for Immersion Lithography and Lithography Method Using the Same 审中-公开
标题翻译：用于浸没光刻的液体组合物和使用其的平版印刷方法
公开(公告)号：US20080176047A1
公开(公告)日：2008-07-24
申请号：US11767275
申请日：2007-06-22
申请人： Keun Kyu Kong , Hyoung Ryeun Kim , Hyeong Soo Kim , Jae Chang Jung , Sung Koo Lee
发明人： Keun Kyu Kong , Hyoung Ryeun Kim , Hyeong Soo Kim , Jae Chang Jung , Sung Koo Lee
IPC分类号： G03C1/73 , B41M5/00 , G03F7/26 , G03B27/42
CPC分类号： G03F7/2041 , G03F7/70341 , Y10T428/24802
摘要： Disclosed herein are a liquid composition for immersion lithography and a lithography method using the composition. The liquid composition includes at least one nonionic surfactant selected from the group comprising of a polyvinyl alcohol, a pentaerythritol-based compound, a polymer containing an alkylene oxide, and a compound represented by Formula I: wherein R is a linear or branched, substituted C1-C40 alkyl, and n is an integer ranging from 10 to 10,000. The surface tension of the liquid composition is reduced by the nonionic surfactant, thereby solving the problem that the liquid composition is not completely filled or is partially concentrated on a wafer having a fine topology and removing micro bubbles between the photoresist film and the liquid composition.
摘要翻译：本文公开了用于浸没式光刻的液体组合物和使用该组合物的光刻方法。液体组合物包含至少一种非离子表面活性剂，其选自聚乙烯醇，季戊四醇基化合物，含有烯化氧的聚合物和由式I表示的化合物：其中R是直链或支链的取代的C C 1 -C 40烷基，n是10至10,000的整数。通过非离子表面活性剂降低液体组合物的表面张力，从而解决液体组合物未完全填充或部分浓缩在具有细微拓扑结构的晶片上并且去除光致抗蚀剂膜和液体组合物之间的微小气泡的问题。

6. 发明授权

US06399792B2 Photoresist cross-linker and photoresist composition comprising the same 失效
标题翻译：光阻抗交联剂和包含其的光致抗蚀剂组合物
公开(公告)号：US06399792B2
公开(公告)日：2002-06-04
申请号：US09954680
申请日：2001-09-11
申请人： Keun Kyu Kong , Jae Chang Jung , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik
发明人： Keun Kyu Kong , Jae Chang Jung , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik
IPC分类号： C07D32500
CPC分类号： G03F7/0045 , G03F7/038
摘要： The present invention is directed to photoresist cross-linkers selected from the group consisting of a cross-linker monomer represented by following Chemical Formula 1, and homopolymers and copolymers thereof. wherein X1, X2, R, R′, R″, R1, R2, p, q and s are those defined herein. Such cross-linkers are suitable for use in photolithography processes employing KrF(248 nm), ArF(193 nm), E-beam, ion-beam or EUV light sources.
摘要翻译：本发明涉及选自由以下化学式1表示的交联剂单体和其均聚物和共聚物的光致抗蚀剂交联剂，其中X1，X2，R，R'，R“，R1， R2，p，q和s是本文定义的那些。这种交联剂适用于采用KrF（248nm），ArF（193nm），电子束，离子束或EUV光源的光刻工艺。

7. 发明授权

US07563753B2 Cleaning solution for removing photoresist 有权
标题翻译：用于除去光致抗蚀剂的清洁溶液
公开(公告)号：US07563753B2
公开(公告)日：2009-07-21
申请号：US10317578
申请日：2002-12-12
申请人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin , Keun Kyu Kong , Sung Koo Lee , Young Sun Hwang
发明人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin , Keun Kyu Kong , Sung Koo Lee , Young Sun Hwang
IPC分类号： C11D7/50
CPC分类号： C11D3/3738 , C11D1/44 , C11D1/72 , C11D1/721 , C11D1/722 , C11D3/373 , C11D3/3742 , C11D7/263 , C11D7/265 , C11D7/267 , C11D7/3218 , C11D7/34 , C11D11/0047 , G03F7/422
摘要： Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (H2O) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (—COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (—SO3H) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds. wherein R1, R2, R3, R4, R5, A, l and n are defined in the specification.
摘要翻译：公开了用于除去光致抗蚀剂树脂的清洁溶液和使用其形成图案的方法。清洗溶液包括作为主要成分的水（H 2 O），一种或多种作为添加剂的表面活性剂，其选自聚氧化烯化合物，式1的醇胺盐和具有羧酸（-COOH）基团的烃化合物，式1的醇胺和具有磺酸（-SO 3 H）基团的烃化合物，聚乙二醇化合物，式3化合物，分子量为1000至10000的化合物，包括式4的重复单元，聚醚变性硅化合物和醇化合物。其中R1，R2，R3，R4，R5，A，1和n在本说明书中定义。

8. 发明授权

US06482565B1 Photoresist cross-linker and photoresist composition comprising the same 失效
标题翻译：光阻抗交联剂和包含其的光致抗蚀剂组合物
公开(公告)号：US06482565B1
公开(公告)日：2002-11-19
申请号：US09448964
申请日：1999-11-24
申请人： Jae Chang Jung , Keun Kyu Kong , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Myoung Soo Kim , Hyoung Gi Kim , Hyeong Soo Kim , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： C07D407/12 , C07D317/12 , C07D319/06
摘要： The present invention relates to a cross-linker for use in a photoresist which is suitable for a photolithography process using KrF (248 ru), ArF (193 nm), E-beam, ion beam or EUV light source. According to the present invention, preferred cross-linkers comprise a copolymer having repeating units derived from: (i) a compound represented by following Chemical Formula 1 and/or (ii) one or more compound(s) selected from the group consisting of acrylic acid, methacrylic acid and maleic anhydride. wherein, R1, R2 and R individually represent straight or branched C1-10 alkyl, straight or branched C1-10 ester, straight or branched C1-10 ketone, straight or branched C1-10 carboxylic acid, straight or branched C1-10 acetal, straight or branched C1-10 alkyl including at least one hydroxyl group, straight or branched C1-10 ester including at least one hydroxyl group, straight or branched C1-10 ketone including at least one hydroxyl group, straight or branched C1-10 carboxylic acid including at least one hydroxyl group, and straight or branched C1-10 acetal including at least one hydroxyl group; R3 represents hydrogen or methyl; m represents 0 or 1; and n represents a number of 1 to 5.
摘要翻译：本发明涉及用于光致抗蚀剂的交联剂，其适用于使用KrF（248uR），ArF（193nm），电子束，离子束或EUV光源的光刻工艺。根据本发明，优选的交联剂包含具有衍生自以下的重复单元的共聚物：（i）由以下化学式1表示的化合物和/或（ii）一种或多种选自丙烯酸的化合物酸，甲基丙烯酸和马来酸酐。其中R1，R2和R各自表示直链或支链C1-10烷基，直链或支链C1-10酯，直链或支链C1-10酮，直链或支链C1-10羧酸，包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10烷基，包括至少一个羟基的直链或支链C 1-10酮，包含至少一个羟基的直链或支链C 1-10羧酸，和包含至少一个羟基的直链或支链C 1-10缩醛; R3表示氢或甲基; m表示0或1; n表示1〜5的数。

9. 发明授权

US06455225B1 Photoresist monomers having stability to post exposure delay, polymers thereof and photoresist compositions containing the same 失效
标题翻译：对后曝光延迟具有稳定性的光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物
公开(公告)号：US06455225B1
公开(公告)日：2002-09-24
申请号：US09640261
申请日：2000-08-16
申请人： Keun Kyu Kong , Jae Chang Jung , Geun Su Lee , Ki Ho Baik
发明人： Keun Kyu Kong , Jae Chang Jung , Geun Su Lee , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： C08F32/00 , C07C43/305 , C07C2602/42 , G03F7/0045 , G03F7/039 , Y10S430/106
摘要： The present invention provides novel photoresist monomers, and photoresist polymers derived from monomers comprising the same. The photoresist monomers of the present invention are represented by the following formula: where Z1, Z2, R1, R2, R3, R4, R5 and p are those defined herein. The photoresist compositions comprising the photoresist polymers of the present invention have excellent etching resistance and heat resistance, and remarkably enhanced PED stability (post exposure delay stability).
摘要翻译：本发明提供新型光致抗蚀剂单体和衍生自包含其的单体的光致抗蚀剂聚合物。本发明的光致抗蚀剂单体由下式表示：其中Z 1，Z 2，R 1，R 2，R 3，R 4，R 5和p是本文定义的那些。包含本发明的光致抗蚀剂聚合物的光致抗蚀剂组合物具有优异的耐蚀刻性和耐热性，并且显着提高PED稳定性（曝光后延迟稳定性）。

10. 发明授权

US06395451B1 Photoresist composition containing photo base generator with photo acid generator 失效
标题翻译：含有光产酸剂的光源组合物的光致抗蚀剂组合物
公开(公告)号：US06395451B1
公开(公告)日：2002-05-28
申请号：US09666932
申请日：2000-09-21
申请人： Jae Chang Jung , Keun Kyu Kong , Jin Soo Kim , Ki Ho Baik
发明人： Jae Chang Jung , Keun Kyu Kong , Jin Soo Kim , Ki Ho Baik
IPC分类号： G03F7004
CPC分类号： H01L21/02118 , G03F7/0045 , G03F7/039 , H01L21/02282 , H01L21/0274 , H01L21/312 , Y10S430/115 , Y10S430/12
摘要： The present invention relates to a photoresist composition containing Photo Base Generator (PBG), more specifically, to a photoresist composition which comprises (a) photoresist resin, (b) photo acid generator, (c) organic solvent and further (d) photo base generator. The photo base generator is preferably selected from benzyloxycarbonyl compound of Chemical Formula 1 or O-acyloxime compound of Chemical Formula 2, which prevents a slopping pattern formation and a severe I/D Bias occurrence. wherein, R′, R1 to R6 are defined in accordance with the Specification.
摘要翻译：本发明涉及一种含光致抗蚀剂组合物，更具体地说涉及光致抗蚀剂组合物，该组合物包括（a）光致抗蚀剂树脂，（b）光酸产生剂，（c）有机溶剂和（d）发电机。光产生剂优选选自化学式1的苄氧基羰基化合物或化学式2的O-酰氧基肟化合物，其防止形成浆液形成和严重的I / D偏差。其中R'，R 1至R 6定义在符合规范。

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