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1. 发明授权

US09798849B2 Methods of detecting stresses, methods of training compact models, methods of relaxing stresses, and computing systems 有权
公开(公告)号：US09798849B2
公开(公告)日：2017-10-24
申请号：US14688440
申请日：2015-04-16
申请人： Jae-Pil Shin , Chang-Woo Kang , Jong-Won Kim , Ho-Joon Lee , Kyu-Baik Chang , Won-Young Chung
发明人： Jae-Pil Shin , Chang-Woo Kang , Jong-Won Kim , Ho-Joon Lee , Kyu-Baik Chang , Won-Young Chung
IPC分类号： G06F9/455 , G06F17/50
CPC分类号： G06F17/5081 , G06F17/5009
摘要： A method of detecting stress of an integrated circuit including first and second patterns formed from different materials may comprise: determining one or more stress detection points of the first pattern; dividing a region including a first stress detection point of the one or more stress detection points into a plurality of divided regions; calculating areas of the second pattern at the divided regions; and/or detecting a stress level applied to the first stress detection point of the first pattern by the second pattern based on the areas of the second pattern at the divided regions.

2. 发明申请

US20130260452A1 Methods For The Cryopreservation Of Mammalian Cells 审中-公开
标题翻译：哺乳动物细胞冷冻保存方法
公开(公告)号：US20130260452A1
公开(公告)日：2013-10-03
申请号：US13501381
申请日：2010-10-18
申请人： Mehmet Toner , Heidi Y. Elmoazzen , Thomas L. Toth , Yunseok Heo , Ho-Joon Lee , Nilay Chakraborty
发明人： Mehmet Toner , Heidi Y. Elmoazzen , Thomas L. Toth , Yunseok Heo , Ho-Joon Lee , Nilay Chakraborty
IPC分类号： G01N1/42
CPC分类号： C12N1/04 , A01N1/0268 , A01N1/0284 , G01N1/42
摘要： Manufactured capillary tubes can include: a tubular member; and a coating applied partially covering the tubular member, the coating defining a window where the tubular member is free of the coating. Kits containing and methods related to the capillary tubes can be used for the cryopreservation of cells.
摘要翻译：制造的毛细管可以包括：管状构件; 以及部分地覆盖管状构件的涂层，该涂层限定一个窗口，其中管状构件没有涂层。包含的试剂盒和与毛细管有关的方法可用于细胞的低温保存。

3. 发明授权

US06441401B1 Thin film transistor array panel for liquid crystal display and method for repairing the same 有权
标题翻译：用于液晶显示器的薄膜晶体管阵列面板及其修复方法
公开(公告)号：US06441401B1
公开(公告)日：2002-08-27
申请号：US09527803
申请日：2000-03-17
申请人： Cheol-Soo Jung , Young-Sun Kim , Ho-Joon Lee , Yeong-Hwan Cho , Hyeon-Hwan Kim , Bung-Hyuk Min , Woon-Yong Park , Il-Gon Kim , Jang-Soo Kim , Jin-Oh Kwag , Seog-Chae Lee
发明人： Cheol-Soo Jung , Young-Sun Kim , Ho-Joon Lee , Yeong-Hwan Cho , Hyeon-Hwan Kim , Bung-Hyuk Min , Woon-Yong Park , Il-Gon Kim , Jang-Soo Kim , Jin-Oh Kwag , Seog-Chae Lee
IPC分类号： H01L2900
CPC分类号： G02F1/136259 , G02F2001/136263 , G02F2001/136272 , H01L27/12
摘要： A gate line extending in a horizontal direction is formed on an insulating substrate, and a data line is formed perpendicular to the gate line defining a pixel of a matrix array. Pixel electrodes receiving image signals through the data line are formed in a pixel, and a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode connected to the pixel electrode is formed on the portion where the gate lines and the data lines intersect. A storage wire including a storage electrode line in the horizontal direction, a storage electrode connected to the storage electrode line, and at least one of the storage electrode connection portions connecting storage electrodes of neighboring pixels is formed in the same direction as the gate line. A redundant repair line overlaps and is insulated from the storage wire at one end and overlaps the storage wire or the gate wire of a neighboring pixel at the other end is formed in the same layer as the data wire. Also, a storage wire connection portion connecting the storage wires of a neighboring pixel is formed in the same layer as the pixel electrode. In this structure, if portions of the gate wire or the data wire are disconnected, the portions overlapping the disconnected wire, the storage wire, and the redundant repair line are shorted to repair an open wire defect.
摘要翻译：在绝缘基板上形成沿水平方向延伸的栅极线，并且垂直于限定矩阵阵列的像素的栅极线形成数据线。通过数据线接收图像信号的像素电极形成在像素中，并且形成具有连接到栅极线的栅电极，连接到数据线的源电极和连接到像素电极的漏电极的薄膜晶体管在栅极线和数据线相交的部分。包括在水平方向上存储电极线的存储线，连接到存储电极线的存储电极以及连接相邻像素的存储电极的至少一个存储电极连接部分沿与栅极线相同的方向形成。冗余维修线在一端重叠并与存储线绝缘，并与存储线重叠，另一端的相邻像素的栅极线形成在与数据线相同的层中。此外，连接相邻像素的存储线的存储线连接部分形成在与像素电极相同的层中。在这种结构中，如果栅极线或数据线的部分断开，与断开的线，存储线和冗余修复线重叠的部分短路以修复开路的线缺陷。

4. 发明申请

US20090172208A1 Wibro USB modem device having storage device 审中-公开
标题翻译： Wibro USB调制解调器设备具有存储设备
公开(公告)号：US20090172208A1
公开(公告)日：2009-07-02
申请号：US12077548
申请日：2008-03-20
申请人： Ho-Joon Lee , Jung-Man Moon , Dae-Ki Kim
发明人： Ho-Joon Lee , Jung-Man Moon , Dae-Ki Kim
IPC分类号： G06F12/02
CPC分类号： G06F1/1632 , G06F1/266 , G06F13/00
摘要： Disclosed herein is a Wireless Broadband (WiBro) Universal Serial Bus (USB) modem device having a storage device and a WiBro communication device. A USB hub is connected to the USB interface of the WiBro communication device and the USB interface of the storage device, and configured to relay data to a user terminal through a USB connector. A switching mode power supply unit is configured to have a DC-DC switching mode, receive power from the user terminal, and apply the power by performing high-speed switching so that the WiBro communication device and the storage device are simultaneously driven. The switching mode power supply unit includes a dual output switching mode power supply unit and a single output switching mode power supply unit.
摘要翻译：本文公开了具有存储设备和WiBro通信设备的无线宽带（WiBro）通用串行总线（USB）调制解调器设备。 USB集线器连接到WiBro通信设备的USB接口和存储设备的USB接口，并配置为通过USB连接器将数据中继到用户终端。开关模式电源单元被配置为具有DC-DC切换模式，从用户终端接收电力，并且通过执行高速切换来施加电力，使得WiBro通信设备和存储设备同时被驱动。开关模式电源单元包括双输出开关模式电源单元和单输出开关模式电源单元。

5. 发明授权

US07291860B2 Thin film transistor array panel 有权
标题翻译：薄膜晶体管阵列面板
公开(公告)号：US07291860B2
公开(公告)日：2007-11-06
申请号：US10699791
申请日：2003-11-04
申请人： Cheol-Soo Jung , Young-Sun Kim , Ho-Joon Lee , Yeong-Hwan Cho , Hyeon-Hwan Kim , Bung-Hyuk Min , Woon-Yong Park , Il-Gon Kim , Jang-Soo Kim , Jin-Oh Kwag , Seog-Chae Lee
发明人： Cheol-Soo Jung , Young-Sun Kim , Ho-Joon Lee , Yeong-Hwan Cho , Hyeon-Hwan Kim , Bung-Hyuk Min , Woon-Yong Park , Il-Gon Kim , Jang-Soo Kim , Jin-Oh Kwag , Seog-Chae Lee
IPC分类号： H01L31/00
CPC分类号： G02F1/136259 , G02F2001/136263 , G02F2001/136272 , H01L27/12
摘要： A gate line extending in a horizontal direction is formed on an insulating substrate, and a data line is formed perpendicular to the gate line defining a pixel of a matrix array. Pixel electrodes receiving image signals through the data line are formed in a pixel, and a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode connected to the pixel electrode is formed on the portion where the gate lines and the data lines intersect. A storage wire including a storage electrode line in the horizontal direction, a storage electrode connected to the storage electrode line, and at least one of the storage electrode connection portions connecting storage electrodes of neighboring pixels is formed in the same direction as the gate line. A redundant repair line overlaps and is insulated from the storage wire at one end and overlaps the storage wire or the gate wire of a neighboring pixel at the other end is formed in the same layer as the data wire. Also, a storage wire connection portion connecting the storage wires of a neighboring pixel is formed in the same layer as the pixel electrode. In this structure, if portions of the gate wire or the data wire are disconnected, the portions overlapping the disconnected wire, the storage wire, and the redundant repair line are shorted to repair an open wire defect.
摘要翻译：在绝缘基板上形成沿水平方向延伸的栅极线，并且垂直于限定矩阵阵列的像素的栅极线形成数据线。通过数据线接收图像信号的像素电极形成在像素中，并且形成具有连接到栅极线的栅电极，连接到数据线的源电极和连接到像素电极的漏电极的薄膜晶体管在栅极线和数据线相交的部分。包括在水平方向上存储电极线的存储线，连接到存储电极线的存储电极，以及连接相邻像素的存储电极的至少一个存储电极连接部分以与栅极线相同的方向形成。冗余修复线与存储线在一端重叠并与存储线绝缘，并与存储线重叠，另一端的相邻像素的栅极线形成在与数据线相同的层中。此外，连接相邻像素的存储线的存储线连接部分形成在与像素电极相同的层中。在这种结构中，如果栅极线或数据线的部分断开，与断开的线，存储线和冗余修复线重叠的部分短路以修复开路的线缺陷。

6. 发明授权

US06892031B2 Signal processing system of multiplexed fiber bragg grating sensor using CDMA 失效
标题翻译： CDMA复用光纤布拉格光栅传感器信号处理系统
公开(公告)号：US06892031B2
公开(公告)日：2005-05-10
申请号：US09907573
申请日：2001-07-19
申请人： Ho-Joon Lee
发明人： Ho-Joon Lee
IPC分类号： H04B10/02 , G01D5/353 , G01L1/24 , H04J4/00 , H04J14/02 , H04J14/08
CPC分类号： G01D5/35383 , G01L1/246
摘要： A signal processing system of a multiplexed FBG sensor using CDMA includes a pseudo random bit sequences (PRBS) generator for generating pseudo random bit sequence; a LED for light-emitting at a pseudo random bit from the PRBS generator; a fiber coupler for transmitting a light signal from the LED into a FBG sensor portion and passing signals reflected by the FBG sensor portion herethrough; the FBG sensor portion for receiving/reflecting the light signal via an optic fiber to forward it back to the fiber coupler; an FBG filter portion for filtering the signal reflected by the FBG sensor portion and passed through the fiber coupler; photo detector for converting the light signal from the FBG filter portion into the electrical signal; a delaying portion for delaying a pseudo random bit signal from the PRBS generator for a predetermined time period; a mixing portion for mixing the delay signal from the delaying portion and the output signal from the photo detector; and at least one auto-correlation device for integrating or auto-correlating the signal from the mixing portion, thereby enhancing the stability of the system and the linearity of a signal to be measured to applied strain.
摘要翻译：使用CDMA的复用FBG传感器的信号处理系统包括用于产生伪随机比特序列的伪随机比特序列（PRBS）生成器; 用于从PRBS发生器以伪随机比特发光的LED; 光纤耦合器，用于将来自LED的光信号传输到FBG传感器部分并通过由FBG传感器部分反射的信号; FBG传感器部分，用于经由光纤接收/反射光信号，以将其反射回光纤耦合器; FBG滤波器部分，用于对由FBG传感器部分反射并通过光纤耦合器的信号进行滤波; 光电检测器，用于将来自FBG滤波器部分的光信号转换成电信号; 延迟部分，用于将来自PRBS发生器的伪随机位信号延迟预定时间段; 混合部分，用于混合来自延迟部分的延迟信号和来自光电检测器的输出信号; 以及用于对来自混合部分的信号进行积分或自相关的至少一个自相关装置，从而提高系统的稳定性和待测应变信号的线性度。

7. 发明授权

US06657231B2 Thin film transistor array panel 有权
公开(公告)号：US06657231B2
公开(公告)日：2003-12-02
申请号：US10171777
申请日：2002-06-17
申请人： Cheol-Soo Jung , Young-Sun Kim , Ho-Joon Lee , Yeong-Hwan Cho , Hyeon-Hwan Kim , Bung-Hyuk Min , Woon-Yong Park , Il-Gon Kim , Jang-Soo Kim , Jin-Oh Kwag , Seog-Chae Lee
发明人： Cheol-Soo Jung , Young-Sun Kim , Ho-Joon Lee , Yeong-Hwan Cho , Hyeon-Hwan Kim , Bung-Hyuk Min , Woon-Yong Park , Il-Gon Kim , Jang-Soo Kim , Jin-Oh Kwag , Seog-Chae Lee
IPC分类号： H01L2904
CPC分类号： G02F1/136259 , G02F2001/136263 , G02F2001/136272 , H01L27/12
摘要： A gate line extending in a horizontal direction is formed on an insulating substrate, and a data line is formed perpendicular to the gate line defining a pixel of a matrix array. Pixel electrodes receiving image signals through the data line are formed in a pixel, and a thin film transistor having a gate electrode connected to the gate line, a source electrode connected to the data line, and a drain electrode connected to the pixel electrode is formed on the portion where the gate lines and the data lines intersect. A storage wire including a storage electrode line in the horizontal direction, a storage electrode connected to the storage electrode line, and at least one of the storage electrode connection portions connecting storage electrodes of neighboring pixels is formed in the same direction as the gate line. A redundant repair line overlaps and is insulated from the storage wire at one end and overlaps the storage wire or the gate wire of a neighboring pixel at the other end is formed in the same layer as the data wire. Also, a storage wire connection portion connecting the storage wires of a neighboring pixel is formed in the same layer as the pixel electrode. In this structure, if portions of the gate wire or the data wire are disconnected, the portions overlapping the disconnected wire, the storage wire, and the redundant repair line are shorted to repair an open wire defect.

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