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1. 发明申请

US20090146724A1 SWITCHING CIRCUIT FOR MILLIMETER WAVEBAND CONTROL CIRCUIT 有权
标题翻译：用于微波波形控制电路的切换电路
公开(公告)号：US20090146724A1
公开(公告)日：2009-06-11
申请号：US12139046
申请日：2008-06-13
申请人： Jae Kyoung Mun , Dong Young Kim , Jong Won Lim , Ho Kyun Ahn , Hae Cheon Kim , Hyun Kyu Yu
发明人： Jae Kyoung Mun , Dong Young Kim , Jong Won Lim , Ho Kyun Ahn , Hae Cheon Kim , Hyun Kyu Yu
IPC分类号： H03K17/06
CPC分类号： H03K17/063 , H01P1/15 , H03K17/693 , H03K2017/066
摘要： Provided is a switching circuit for a millimeter waveband control circuit. The switching circuit for a millimeter waveband control circuit includes a switching cell disposed on a signal port path to match an interested frequency and including at least one transistor coupled vertically to an input/output transmission line and a plurality of ground via holes disposed symmetrically in an upper portion and a lower portion of the input/output transmission line; capacitors for stabilizing a bias of the switching cell; and bias pads coupled in parallel to the capacitor to control the switching cell. Therefore, the switching circuit may be useful to improve its isolation by simplifying its design and layout through the use of symmetrical structure of optimized switching cells without the separate use of different switch elements, and also to reduce its manufacturing cost through the improved yield of the manufacturing process and the enhanced integration since it is possible to reduce a chip size of an integrated circuit in addition to its low insertion loss.
摘要翻译：提供了一种用于毫米波段控制电路的开关电路。毫米波段控制电路的开关电路包括设置在信号端口路径上以匹配感兴趣频率并且包括垂直于输入/输出传输线耦合的至少一个晶体管的开关单元和对称地布置在其中的多个接地通孔输入/输出传输线的上部和下部; 用于稳定开关电池的偏置的电容器; 以及与电容器并联耦合的偏置焊盘以控制开关单元。因此，切换电路可能有助于通过简化其设计和布局来改善其隔离，通过使用优化的开关电池的对称结构，而不需要分开使用不同的开关元件，并且还可以通过提高产量来提高其制造成本制造工艺和增强的集成，因为除了低插入损耗之外，可以减小集成电路的芯片尺寸。

2. 发明授权

US07671697B2 High-isolation switching device for millimeter-wave band control circuit 有权
标题翻译：用于毫米波段控制电路的高隔离开关装置
公开(公告)号：US07671697B2
公开(公告)日：2010-03-02
申请号：US11928410
申请日：2007-10-30
申请人： Jae Kyoung Mun , Hae Cheon Kim , Dong Young Kim , Jong Won Lim , Ho Kyun Ahn , Hyun Kyu Yu
发明人： Jae Kyoung Mun , Hae Cheon Kim , Dong Young Kim , Jong Won Lim , Ho Kyun Ahn , Hyun Kyu Yu
IPC分类号： H01P1/10 , H01L29/80
CPC分类号： H01P1/15
摘要： Provided is a high-isolation switching device for a millimeter-wave band control circuit. By optimizing a cell structure to improve the isolation of an off-state without deteriorating the insertion loss of an on-state, it is possible to implement a high-isolation switching device useful in the design and manufacture of a millimeter-wave band control circuit such as a phase shifter or digital attenuator using switching characteristics. In addition, when a switch microwave monolithic integrated circuit (MMIC) is designed to use the switching device, it is not necessary to use a multi-stage shunt field effect transistor (FET) to improve isolation, nor to dispose an additional λ/4 transformer transmission line, inductor or capacitor near the switching device. Thus, chip size can be reduced, degree of integration can be enhanced, and manufacturing yield can be increased. Consequently, it is possible to reduce manufacturing cost.
摘要翻译：提供了一种用于毫米波段控制电路的高隔离开关装置。通过优化单元结构以改善断开状态的隔离而不会导致导通状态的插入损耗的恶化，可以实现用于设计和制造毫米波段控制电路的高隔离开关装置例如使用开关特性的移相器或数字衰减器。另外，当开关微波单片集成电路（MMIC）设计为使用开关器件时，不需要使用多级并联场效应晶体管（FET）来改善隔离度，也不需要设置额外的λ/ 4 变压器输电线路，电感器或电容器附近的开关装置。因此，可以降低芯片尺寸，可以提高集成度，并且可以提高制造成品率。因此，可以降低制造成本。

3. 发明申请

US20080129427A1 HIGH-ISOLATION SWITCHING DEVICE FOR MILLIMETER-WAVE BAND CONTROL CIRCUIT 有权
标题翻译：用于微波波段控制电路的高隔离开关装置
公开(公告)号：US20080129427A1
公开(公告)日：2008-06-05
申请号：US11928410
申请日：2007-10-30
申请人： Jae Kyoung MUN , Hae Cheon Kim , Dong Young Kim , Jong Won Lim , Ho Kyun Ahn , Hyun Kyu Yu
发明人： Jae Kyoung MUN , Hae Cheon Kim , Dong Young Kim , Jong Won Lim , Ho Kyun Ahn , Hyun Kyu Yu
IPC分类号： H01P1/10
CPC分类号： H01P1/15
摘要： Provided is a high-isolation switching device for a millimeter-wave band control circuit. By optimizing a cell structure to improve the isolation of an off-state without deteriorating the insertion loss of an on-state, it is possible to implement a high-isolation switching device useful in the design and manufacture of a millimeter-wave band control circuit such as a phase shifter or digital attenuator using switching characteristics. In addition, when a switch microwave monolithic integrated circuit (MMIC) is designed to use the switching device, it is not necessary to use a multi-stage shunt field effect transistor (FET) to improve isolation, nor to dispose an additional λ/4 transformer transmission line, inductor or capacitor near the switching device. Thus, chip size can be reduced, degree of integration can be enhanced, and manufacturing yield can be increased. Consequently, it is possible to reduce manufacturing cost.
摘要翻译：提供了一种用于毫米波段控制电路的高隔离开关装置。通过优化单元结构以改善断开状态的隔离而不会导致导通状态的插入损耗的恶化，可以实现用于设计和制造毫米波段控制电路的高隔离开关装置例如使用开关特性的移相器或数字衰减器。另外，当开关微波单片集成电路（MMIC）被设计为使用开关器件时，不需要使用多级并联场效应晶体管（FET）来改善隔离度，也不需要配置额外的λ/ 4 变压器输电线路，电感器或电容器附近的开关装置。因此，可以降低芯片尺寸，可以提高集成度，并且可以提高制造成品率。因此，可以降低制造成本。

4. 发明授权

US07889023B2 Switching circuit for millimeter waveband control circuit 有权
标题翻译：毫米波段控制电路的开关电路
公开(公告)号：US07889023B2
公开(公告)日：2011-02-15
申请号：US12139046
申请日：2008-06-13
申请人： Jae Kyoung Mun , Dong Young Kim , Jong Won Lim , Ho Kyun Ahn , Hae Cheon Kim , Hyun Kyu Yu
发明人： Jae Kyoung Mun , Dong Young Kim , Jong Won Lim , Ho Kyun Ahn , Hae Cheon Kim , Hyun Kyu Yu
IPC分类号： H01P1/10 , H01P3/08
CPC分类号： H03K17/063 , H01P1/15 , H03K17/693 , H03K2017/066
摘要： Provided is a switching circuit for a millimeter waveband control circuit. The switching circuit for a millimeter waveband control circuit includes a switching cell disposed on a signal port path to match an interested frequency and including at least one transistor coupled vertically to an input/output transmission line and a plurality of ground via holes disposed symmetrically in an upper portion and a lower portion of the input/output transmission line; capacitors for stabilizing a bias of the switching cell; and bias pads coupled in parallel to the capacitor to control the switching cell. Therefore, the switching circuit may be useful to improve its isolation by simplifying its design and layout through the use of symmetrical structure of optimized switching cells without the separate use of different switch elements, and also to reduce its manufacturing cost through the improved yield of the manufacturing process and the enhanced integration since it is possible to reduce a chip size of an integrated circuit in addition to its low insertion loss.
摘要翻译：提供了一种用于毫米波段控制电路的开关电路。毫米波段控制电路的开关电路包括设置在信号端口路径上以匹配感兴趣频率并且包括垂直于输入/输出传输线耦合的至少一个晶体管的开关单元和对称地布置在其中的多个接地通孔输入/输出传输线的上部和下部; 用于稳定开关电池的偏置的电容器; 以及与电容器并联耦合的偏置焊盘以控制开关单元。因此，切换电路可能有助于通过简化其设计和布局来改善其隔离，通过使用优化的开关电池的对称结构，而不需要分开使用不同的开关元件，并且还可以通过提高产量来提高其制造成本制造工艺和增强的集成，因为除了低插入损耗之外，可以减小集成电路的芯片尺寸。

5. 发明授权

US07973368B2 Semiconductor device with T-gate electrode 失效
标题翻译：具有T型栅电极的半导体器件
公开(公告)号：US07973368B2
公开(公告)日：2011-07-05
申请号：US12122982
申请日：2008-05-19
申请人： Jong Won Lim , Ho Kyun Ahn , Hong Gu Ji , Woo Jin Chang , Jae Kyoung Mun , Hae Cheon Kim , Hyun Kyu Yu
发明人： Jong Won Lim , Ho Kyun Ahn , Hong Gu Ji , Woo Jin Chang , Jae Kyoung Mun , Hae Cheon Kim , Hyun Kyu Yu
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L29/778 , H01L29/20 , H01L29/42316 , H01L29/66462
摘要： Provided are a semiconductor device with a T-gate electrode capable of improving stability and a high frequency characteristic of the semiconductor device by reducing source resistance, parasitic capacitance, and gate resistance and a method of fabricating the same. In the semiconductor device, in order to form source and drain electrodes and the T-gate electrode on a substrate, first and second protective layers constructed with silicon oxide layers or silicon nitride layers are formed on sides of a supporting part under a head part of the T-gate electrode, and the second protective layer constructed with a silicon oxide layer or silicon nitride layer is formed on sides of the source and drain electrodes. Accordingly, it is possible to protect an activated region of the semiconductor device and reduce gate-drain parasitic capacitance and gate-source parasitic capacitance.
摘要翻译：提供一种具有T栅电极的半导体器件及其制造方法，该半导体器件能够通过降低源极电阻，寄生电容和栅极电阻来提高半导体器件的稳定性和高频特性。在半导体器件中，为了在衬底上形成源电极和漏电极以及T栅电极，在氧化硅层或氮化硅层构成的第一和第二保护层形成在支撑部分的头部在栅电极和漏电极的侧面上形成T形栅电极和由氧化硅层或氮化硅层构成的第二保护层。因此，可以保护半导体器件的激活区域并减小栅极 - 漏极寄生电容和栅极 - 源极寄生电容。

6. 发明授权

US07626473B2 Signal transmission line for millimeter-wave band 有权
标题翻译：毫米波段信号传输线
公开(公告)号：US07626473B2
公开(公告)日：2009-12-01
申请号：US11872026
申请日：2007-10-14
申请人： Ho Young Kim , Hae Cheon Kim , Hyun Kyu Yu , Young Jun Chong
发明人： Ho Young Kim , Hae Cheon Kim , Hyun Kyu Yu , Young Jun Chong
IPC分类号： H01P5/02 , H01P3/08
CPC分类号： H01P3/00
摘要： Provided is a signal transmission line for a millimeter-wave band. The signal transmission line includes: a dielectric substrate; an input line formed on the dielectric substrate; a pair of serial transmission lines formed on the dielectric substrate, the serial transmission lines being branched at, separated from, and electromagnetically connected in series with one end of the input line; a pair of parallel transmission lines respectively formed on the dielectric substrate at both sides of the input line and the serial transmission lines, and having both ends separated from and electromagnetically connected in parallel with one end of each of the input line and the serial transmission lines; and a pair of wires electrically connected between the other ends of the parallel transmission lines and a connection pad of a monolithic microwave integrated circuit (MMIC). An electrical signal of about 57 to 63 GHz generated from a monolithic microwave integrated circuit (MMIC) can be efficiently transferred.
摘要翻译：提供了一种用于毫米波段的信号传输线。信号传输线包括：电介质基片; 形成在电介质基板上的输入线; 形成在电介质基板上的一对串行传输线，串联传输线与输入线的一端分离并分离并与之电磁连接; 分别在输入线和串行传输线的两侧形成在电介质基板上的一对平行传输线，并且其两端与输入线和串行传输线的一端分开并与之并联电磁连接 ; 以及电连接在并行传输线的另一端之间的一对电线和单片微波集成电路（MMIC）的连接焊盘。可以有效地传送从单片微波集成电路（MMIC）产生的约57至63GHz的电信号。

7. 发明授权

US07933576B2 Sub-harmonic mixer 失效
标题翻译：次谐波混频器
公开(公告)号：US07933576B2
公开(公告)日：2011-04-26
申请号：US11946315
申请日：2007-11-28
申请人： Hong Gu Ji , Hae Cheon Kim , Hyun Kyu Yu
发明人： Hong Gu Ji , Hae Cheon Kim , Hyun Kyu Yu
IPC分类号： H04B1/16
CPC分类号： H03D7/1425 , H03D7/1433 , H03D7/1441 , H03D7/1475 , H03D2200/0043
摘要： A sub-harmonic mixer is provided, which includes: a mixer core having first and second transistors performing switching operations in response to a local oscillator (LO) signal and a radio frequency (RF) signal; a power source applying bias maximizing nonlinearity of a transistor included in the mixer core; an RF port applying an RF signal to the mixer core; an LO port applying an LO signal to the mixer core; and first and second phase delay circuits in which the RF signals applied to the first and second transistors have a 180-degree phase difference.
摘要翻译：提供了一种亚谐波混频器，其包括：具有第一和第二晶体管的混频器核，其响应于本地振荡器（LO）信号和射频（RF）信号执行切换操作; 施加偏置最大化混合器核心中包括的晶体管的非线性的电源; 将RF信号施加到混频器核心的RF端口; LO端口将LO信号施加到混频器核心; 以及施加到第一和第二晶体管的RF信号具有180度相位差的第一和第二相位延迟电路。

8. 发明授权

US07852165B2 Capacitive-degeneration double cross-coupled voltage-controlled oscillator 有权
标题翻译：电容变性双交叉电压控制振荡器
公开(公告)号：US07852165B2
公开(公告)日：2010-12-14
申请号：US12114705
申请日：2008-05-02
申请人： Ja Yol Lee , Sang Heung Lee , Hae Cheon Kim , Hyun Kyu Yu
发明人： Ja Yol Lee , Sang Heung Lee , Hae Cheon Kim , Hyun Kyu Yu
IPC分类号： H03B5/12
CPC分类号： H03B5/1231 , H03B5/1212 , H03B5/1215 , H03B5/1221 , H03B5/1253
摘要： A capacitive-degeneration double cross-coupled voltage-controlled oscillator is provided. The capacitive-degeneration double cross-coupled voltage-controlled oscillator includes a main cross-coupled oscillating unit including an oscillation transistor pair cross-coupled to first and second output nodes of a resonating unit to perform an oscillation operation; and an auxiliary cross-coupled oscillating unit including a positive-feedback transistor pair cross-coupled to the first and second output nodes and the transistor pair of the main cross-coupled oscillating unit and a degeneration capacitance connected between emitters of the positive-feedback transistor pair so as to increase a negative resistance of the main cross-coupled oscillating unit. Accordingly, it is possible to increase a maximum attainable oscillation frequency and to decrease an input capacitance.
摘要翻译：提供电容变性双交叉耦合压控振荡器。电容变性双交叉电压控制振荡器包括主交叉耦合振荡单元，其包括交叉耦合到谐振单元的第一和第二输出节点的振荡晶体管对，以执行振荡操作; 以及辅助交叉耦合振荡单元，其包括交叉耦合到第一和第二输出节点的正反馈晶体管对和主交叉耦合振荡单元的晶体管对，以及连接在正反馈晶体管的发射极之间的退化电容以增加主交叉振荡单元的负电阻。因此，可以增加最大可获得的振荡频率并降低输入电容。

9. 发明申请

US20090134944A1 CAPACITIVE-DEGENERATION DOUBLE CROSS-COUPLED VOLTAGE-CONTROLLED OSCILLATOR 有权
标题翻译：电容式变压器双相交流电压控制振荡器
公开(公告)号：US20090134944A1
公开(公告)日：2009-05-28
申请号：US12114705
申请日：2008-05-02
申请人： Ja Yol Lee , Sang Heung Lee , Hae Cheon Kim , Hyun Kyu Yu
发明人： Ja Yol Lee , Sang Heung Lee , Hae Cheon Kim , Hyun Kyu Yu
IPC分类号： H03B5/12
CPC分类号： H03B5/1231 , H03B5/1212 , H03B5/1215 , H03B5/1221 , H03B5/1253
摘要： A capacitive-degeneration double cross-coupled voltage-controlled oscillator is provided. The capacitive-degeneration double cross-coupled voltage-controlled oscillator includes a main cross-coupled oscillating unit including an oscillation transistor pair cross-coupled to first and second output nodes of a resonating unit to perform an oscillation operation; and an auxiliary cross-coupled oscillating unit including a positive-feedback transistor pair cross-coupled to the first and second output nodes and the transistor pair of the main cross-coupled oscillating unit and a degeneration capacitance connected between emitters of the positive-feedback transistor pair so as to increase a negative resistance of the main cross-coupled oscillating unit. Accordingly, it is possible to increase a maximum attainable oscillation frequency and to decrease an input capacitance.
摘要翻译：提供电容变性双交叉耦合压控振荡器。电容变性双交叉电压控制振荡器包括主交叉耦合振荡单元，其包括交叉耦合到谐振单元的第一和第二输出节点的振荡晶体管对，以执行振荡操作; 以及辅助交叉耦合振荡单元，其包括交叉耦合到第一和第二输出节点的正反馈晶体管对和主交叉耦合振荡单元的晶体管对，以及连接在正反馈晶体管的发射极之间的退化电容以增加主交叉振荡单元的负电阻。因此，可以增加最大可获得的振荡频率并降低输入电容。

10. 发明授权

US08902103B2 Radar apparatus supporting short and long range radar operation 有权
标题翻译：支持短距离和远程雷达操作的雷达装置
公开(公告)号：US08902103B2
公开(公告)日：2014-12-02
申请号：US13421223
申请日：2012-03-15
申请人： Cheon Soo Kim , Pil Jae Park , Min Park , Kyung Hwan Park , Dong-Young Kim , Jeong-Geun Kim , Bon Tae Koo , Hyun Kyu Yu
发明人： Cheon Soo Kim , Pil Jae Park , Min Park , Kyung Hwan Park , Dong-Young Kim , Jeong-Geun Kim , Bon Tae Koo , Hyun Kyu Yu
IPC分类号： G01S13/00 , G01S13/08 , G01S13/34 , G01S13/93 , G01S13/02 , G01S7/35
CPC分类号： G01S13/345 , G01S13/931 , G01S2007/358 , G01S2013/0254
摘要： Disclosed is a radar apparatus supporting short range and long range radar operations, wherein a plurality of short range transmitting chirp signals and a plurality of long range transmitting chirp signals are generated by a predetermined modulation scheme and is transmitted to an object through at least one transmitting array antenna and signals reflected from the object is received through at least one receiving array antenna, and the plurality of long range transmitting chirp signals have transmission power larger than that for the plurality of short range transmitting chirp signals.
摘要翻译：公开了一种支持短距离和远程雷达操作的雷达装置，其中通过预定的调制方案产生多个短距离发射啁啾信号和多个长距离发射啁啾信号，并通过至少一个发射通过至少一个接收阵列天线接收从对象反射的阵列天线和信号，并且多个长距离发射啁啾信号的发射功率大于多个短距离发射啁啾信号的发射功率。

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