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1. 发明申请

US20170237397A1 OSCILLATOR PHASE NOISE USING ACTIVE DEVICE STACKING 审中-公开
公开(公告)号：US20170237397A1
公开(公告)日：2017-08-17
申请号：US15583458
申请日：2017-05-01
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Anandaroop Chakrabarti , Mark Ferriss , Bodhisatwa Sadhu
IPC分类号： H03B1/04 , H03B5/12
CPC分类号： H03B1/04 , H03B5/1212 , H03B5/1215 , H03B5/1221 , H03B5/1228 , H03B5/1231 , H03B5/1265 , H03B2200/009 , H03K3/013
摘要： An integrated electronic circuit is provided. The integrated electronic circuit includes a transconductance cell formed from transconductance cell devices. The integrated electronic circuit further includes active and passive decoupling circuits. The integrated electronic circuit also includes an oscillator having a tank that is direct current decoupled from the transconductance cell devices using the active and passive decoupling circuits to increase voltage swing and decrease phase noise of the oscillator.

2. 发明授权

US08154354B2 Nonlinear pulse oscillator methods and apparatus 有权
标题翻译：非线性脉冲振荡器的方法和装置
公开(公告)号：US08154354B2
公开(公告)日：2012-04-10
申请号：US11991577
申请日：2006-09-06
申请人： David Ricketts , Donhee Ham , Xiaofeng Li
发明人： David Ricketts , Donhee Ham , Xiaofeng Li
IPC分类号： H03B5/12
CPC分类号： H03L7/099 , H03B5/1221 , H03B5/1234 , H03B5/1243 , H03K5/12
摘要： Methods and apparatus for implementing stable self-starting and self-sustaining high-speed electrical nonlinear pulse (e.g., soliton, cnoidal wave, or quasi-soliton) oscillators. Chip-scale nonlinear pulse oscillator devices may be fabricated using III-V semiconductor materials (e.g., GaAs) to attain soliton pulse widths on the order of a few picoseconds or less (e.g., 1 to 2 picoseconds, corresponding to frequencies of approximately 300 GHz or greater). In one example, a nonlinear pulse oscillator is implemented as a closed loop structure that comprises a nonlinear transmission line and a distributed nonlinear amplifier arrangement configured to provide a self-adjusting gain as a function of an average voltage of the oscillator signal. In another example, a nonlinear oscillator employing a lumped nonlinear amplifier and a nonlinear transmission line in a closed loop arrangement may be used in combination with a two-port nonlinear transmission line that provides additional pulse compression for pulses circulating in the oscillator.
摘要翻译：用于实现稳定的自启动和自持的高速电非线性脉冲（例如，孤子，cnoidal波或准孤子）振荡器的方法和装置。可以使用III-V半导体材料（例如，GaAs）来制造芯片级非线性脉冲振荡器器件，以获得大约几皮秒或更小的孤子脉冲宽度（例如，1到2皮秒，对应于大约300GHz的频率或更大）。在一个示例中，非线性脉冲振荡器被实现为闭环结构，其包括非线性传输线和配置为提供作为振荡器信号的平均电压的函数的自调节增益的分布式非线性放大器布置。在另一示例中，采用集总非线性放大器和闭环布置中的非线性传输线的非线性振荡器可以与为在振荡器中循环的脉冲提供额外的脉冲压缩的双端口非线性传输线路组合使用。

3. 发明授权

US08143960B2 Voltage controlled oscillator with multi-tap inductor 有权
标题翻译：具有多抽头电感的压控振荡器
公开(公告)号：US08143960B2
公开(公告)日：2012-03-27
申请号：US12011356
申请日：2008-01-25
申请人： Qiang Li
发明人： Qiang Li
IPC分类号： H03B5/12
CPC分类号： H03B5/1228 , H03B5/1215 , H03B5/1221 , H03B5/1253 , H03B5/1265 , H03B2200/0038
摘要： According to one exemplary embodiment, a voltage controlled oscillator configured to operate in low and high band modes includes a low band section and a high band section. The voltage controlled oscillator further includes a multi-tap inductor having a high inductance portion coupled to the low band section and a low inductance portion coupled to the high band section. The low band section is configured to provide a low frequency band oscillator output in the low band mode and the high band section is configure to provide a high frequency band oscillator output in the high band mode. The low band section is disabled in the high band mode and the high band section is disabled in the low band mode. A center tap of the multi-tap inductor is coupled to a supply voltage.
摘要翻译：根据一个示例性实施例，配置为在低频和高频模式下操作的压控振荡器包括低频段和高频段。压控振荡器还包括具有耦合到低频带部分的高电感部分和耦合到高频带部分的低电感部分的多抽头电感器。低频段被配置为在低频带模式中提供低频带振荡器输出，并且高频段部分被配置为在高频带模式中提供高频带振荡器输出。低频段在低频段模式下被禁用，高频段在低频段模式下被禁止。多抽头电感器的中心抽头耦合到电源电压。

4. 发明申请

US20100264995A1 RF Circuits Including Transistors Having Strained Material Layers 有权
标题翻译：包括具有应变材料层的晶体管的RF电路
公开(公告)号：US20100264995A1
公开(公告)日：2010-10-21
申请号：US12767671
申请日：2010-04-26
申请人： Glyn Braithwaite , Richard Hammond , Matthew Currie
发明人： Glyn Braithwaite , Richard Hammond , Matthew Currie
IPC分类号： H03B5/12 , H03F3/16
CPC分类号： H01L29/7378 , H01L27/0617 , H01L27/092 , H01L29/1054 , H01L29/517 , H01L29/518 , H01L29/78654 , H03B5/1203 , H03B5/1209 , H03B5/1212 , H03B5/1215 , H03B5/1221 , H03B5/1228 , H03B5/1243 , H03K3/354 , H03L7/093 , H03L7/099
摘要： Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.
摘要翻译：用于处理射频（“RF”）和微波信号的电路使用具有设置在一个或多个平坦化衬底层上的一个或多个应变沟道层的场效应晶体管（“FET”）来制造。具有这种结构的FET对于例如跨导和噪声系数显示出改善的值。诸如例如压控振荡器（“VCO”），使用这些FET构建的低噪声放大器（“LNA”）和锁相环（“PLL”）的RF电路也表现出增强的性能。

5. 发明授权

US07709828B2 RF circuits including transistors having strained material layers 有权
标题翻译： RF电路包括具有应变材料层的晶体管
公开(公告)号：US07709828B2
公开(公告)日：2010-05-04
申请号：US11032413
申请日：2005-01-10
申请人： Glyn Braithwaite , Richard Hammond , Matthew Currie
发明人： Glyn Braithwaite , Richard Hammond , Matthew Currie
IPC分类号： H01L31/00
CPC分类号： H01L29/7378 , H01L27/0617 , H01L27/092 , H01L29/1054 , H01L29/517 , H01L29/518 , H01L29/78654 , H03B5/1203 , H03B5/1209 , H03B5/1212 , H03B5/1215 , H03B5/1221 , H03B5/1228 , H03B5/1243 , H03K3/354 , H03L7/093 , H03L7/099
摘要： Circuits for processing radio frequency (“RF”) and microwave signals are fabricated using field effect transistors (“FETs”) that have one or more strained channel layers disposed on one or more planarized substrate layers. FETs having such a configuration exhibit improved values for, for example, transconductance and noise figure. RF circuits such as, for example, voltage controlled oscillators (“VCOs”), low noise amplifiers (“LNAs”), and phase locked loops (“PLLs”) built using these FETs also exhibit enhanced performance.
摘要翻译：用于处理射频（“RF”）和微波信号的电路使用具有设置在一个或多个平坦化衬底层上的一个或多个应变沟道层的场效应晶体管（“FET”）来制造。具有这种结构的FET对于例如跨导和噪声系数显示出改善的值。诸如例如压控振荡器（“VCO”），使用这些FET构建的低噪声放大器（“LNA”）和锁相环（“PLL”）的RF电路也表现出增强的性能。

6. 发明授权

US07659784B2 Injection-locked frequency divider 有权
标题翻译：注入锁分频器
公开(公告)号：US07659784B2
公开(公告)日：2010-02-09
申请号：US11965745
申请日：2007-12-28
申请人： Sheng-Lyang Jang , Cheng-Chen Liu
发明人： Sheng-Lyang Jang , Cheng-Chen Liu
IPC分类号： H03B21/00
CPC分类号： H03B19/14 , H03B5/1209 , H03B5/1215 , H03B5/1221 , H03B5/1228 , H03B5/1243 , H03B2200/0074 , H03D7/14
摘要： An injection-locked frequency divider is provided. The injection-locked frequency divider includes a voltage control oscillator (VCO) and a mixer. The VCO includes a LC resonance tank and a negative-resistance generator for generating a differential oscillation signal including a first and a second oscillation signals. The LC resonance tank adjusts a VCO reactance and resonates for generating the differential oscillation signal. The negative-resistance generator coupled to the LC resonance tank eliminates an equivalent resistance generated by the LC resonance tank and maintains the VCO to continuously oscillate. The mixer has a first and a second local input terminals respectively receiving the first and second injected signals included in a differential injected signal, and the first and second radio frequency input terminals respectively receiving the first and second oscillation signals for mixing the differential injected signal with the differential oscillation signal to adjust the output frequency of the differential oscillation signal.
摘要翻译：提供了一种注入锁定分频器。注入锁定分频器包括压控振荡器（VCO）和混频器。 VCO包括LC谐振箱和用于产生包括第一和第二振荡信号的差分振荡信号的负电阻发生器。 LC谐振槽调节VCO电抗并谐振以产生差分振荡信号。耦合到LC谐振槽的负电阻发生器消除了由LC谐振箱产生的等效电阻并且使VCO保持连续振荡。混频器具有分别接收包含在差分注入信号中的第一和第二注入信号的第一和第二本地输入端子，并且分别接收第一和第二振荡信号的第一和第二射频输入端子用于将差分注入信号与差分振荡信号调节差分振荡信号的输出频率。

7. 发明申请

US20090096494A1 Circuit Arrangement For Generating A Complex Signal And The Use Of This Circuit Arrangement In A High-Frequency Transmitter Or Receiver 有权
标题翻译：用于产生复杂信号的电路布置以及在高频发射器或接收器中使用该电路布置
公开(公告)号：US20090096494A1
公开(公告)日：2009-04-16
申请号：US11792405
申请日：2005-11-29
申请人： Tony Gschier
发明人： Tony Gschier
IPC分类号： H03K23/00
CPC分类号： H03K3/289 , H03B5/1215 , H03B5/1221 , H03B5/1228 , H03B5/124 , H03B27/00 , H03B2200/0078 , H03K3/354
摘要： A circuit arrangement for generating an IQ signal which comprises an oscillator (3) and a frequency divider (4). The oscillator (3) and the frequency divider (4) are arranged in a common current path between the supply and reference potentials (7, 5) in accordance with the proposed principle. It is possible to operate the two function blocks using a common BIAS current and additionally to save components.
摘要翻译：一种用于产生包括振荡器（3）和分频器（4）的IQ信号的电路装置。根据所提出的原理，振荡器（3）和分频器（4）被布置在供电参考电位（7,5）之间的公共电流路径中。可以使用公共BIAS电流操作两个功能块，另外还可以保存组件。

8. 发明授权

US07479838B1 Energy efficient waveform generation using tuned resonators 有权
标题翻译：使用调谐谐振器的能量效率波形生成
公开(公告)号：US07479838B1
公开(公告)日：2009-01-20
申请号：US11419922
申请日：2006-05-23
申请人： William C. Athas
发明人： William C. Athas
IPC分类号： H03B11/04 , H03B11/10
CPC分类号： H03L7/099 , H03B5/1203 , H03B5/1212 , H03B5/1221 , H03B5/1228
摘要： A power source, a primary inductor, a load capacitance, and one or more tuned branch resonators and switching devices are coupled to generate pulses which represent a superposition of sinusoidal waveforms. The primary inductor is connected between the power source and the load. At the start of each cycle the load is coupled to ground and each tuned-branch resonators is reinitialized to re-energize the circuits and to stabilize the waveform when the frequencies of the sinusoidal waveforms are non-periodic.
摘要翻译：电源，初级电感器，负载电容以及一个或多个调谐分支谐振器和开关器件被耦合以产生表示正弦波形叠加的脉冲。主电感连接在电源和负载之间。在每个周期的开始，负载被耦合到地，并且每个调谐支路谐振器被重新初始化以重新激励电路，并且当正弦波形的频率是非周期性时稳定波形。

9. 发明申请

US20080157891A1 Oscillator with Darlington Nodes 失效
标题翻译：振荡器与达林顿节点
公开(公告)号：US20080157891A1
公开(公告)日：2008-07-03
申请号：US11617963
申请日：2006-12-29
申请人： Nikolay Tchamov , Pekko Ruippo , Tapio Lehtonen
发明人： Nikolay Tchamov , Pekko Ruippo , Tapio Lehtonen
IPC分类号： H03B5/24 , H03B5/18
CPC分类号： H03B5/1228 , H03B5/1209 , H03B5/1215 , H03B5/1221 , H03B5/1243 , H03B5/1271 , H03B5/1296 , H03B2200/0098
摘要： A voltage-controlled oscillator has a resonance tank core providing a voltage-dependent resonance frequency, switching units connected with the resonance tank core for changing output voltage levels of the oscillator with a frequency corresponding to the resonance frequency of the resonance tank core. At least two of the switching units have pairs of Darlington transistors which are connected via a Darlington node. Output terminals are used for outputting the output voltage levels.
摘要翻译：压控振荡器具有提供电压相关谐振频率的谐振箱芯，与谐振箱芯连接的开关单元，用于以对应于谐振箱芯的谐振频率的频率改变振荡器的输出电压电平。至少两个开关单元具有通过达林顿节点连接的达林顿晶体管对。输出端子用于输出输出电压电平。

10. 发明申请

US20080042762A1 RTD-HBT DIFFERENTIAL OSCILLATOR TOPOLOGY 失效
标题翻译： RTD-HBT差异振荡器拓扑学
公开(公告)号：US20080042762A1
公开(公告)日：2008-02-21
申请号：US11463669
申请日：2006-08-10
申请人： Kyoung-Hoon YANG , Sun-Kyu CHOL
发明人： Kyoung-Hoon YANG , Sun-Kyu CHOL
IPC分类号： H03B7/08
CPC分类号： H03B7/08 , H01L27/0605 , H01L29/7371 , H01L29/882 , H01L29/93 , H03B5/1215 , H03B5/1221 , H03B5/1231 , H03B5/1243
摘要： The new RTD-HBT differential oscillator circuit topology is proposed. At the nodes of the inductors and varactors in the conventional differential oscillator topology, each the RTD is attached to increase the magnitude of the negative conductance, which results in performance improvement in both the RF output power and phase noise. And, the differential sinusoidal voltage waveform which is essential for the wireless communication system are generated. In addition, the DC power consumption RTD-HBT differential oscillator circuit is similar to the conventional HBT differential oscillator due to the small DC power consumption performance of the RTD.
摘要翻译：提出了新的RTD-HBT差分振荡器电路拓扑结构。在常规差分振荡器拓扑中的电感器和变容二极管的节点处，每个RTD被连接以增加负电导的幅度，这导致RF输出功率和相位噪声两者的性能改善。并且，产生对于无线通信系统必不可少的差分正弦电压波形。此外，直流功耗RTD-HBT差分振荡电路由于RTD的小直流功耗特性，与传统的HBT差分振荡器相似。

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