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1. 发明授权

US07852165B2 Capacitive-degeneration double cross-coupled voltage-controlled oscillator 有权
标题翻译：电容变性双交叉电压控制振荡器
公开(公告)号：US07852165B2
公开(公告)日：2010-12-14
申请号：US12114705
申请日：2008-05-02
申请人： Ja Yol Lee , Sang Heung Lee , Hae Cheon Kim , Hyun Kyu Yu
发明人： Ja Yol Lee , Sang Heung Lee , Hae Cheon Kim , Hyun Kyu Yu
IPC分类号： H03B5/12
CPC分类号： H03B5/1231 , H03B5/1212 , H03B5/1215 , H03B5/1221 , H03B5/1253
摘要： A capacitive-degeneration double cross-coupled voltage-controlled oscillator is provided. The capacitive-degeneration double cross-coupled voltage-controlled oscillator includes a main cross-coupled oscillating unit including an oscillation transistor pair cross-coupled to first and second output nodes of a resonating unit to perform an oscillation operation; and an auxiliary cross-coupled oscillating unit including a positive-feedback transistor pair cross-coupled to the first and second output nodes and the transistor pair of the main cross-coupled oscillating unit and a degeneration capacitance connected between emitters of the positive-feedback transistor pair so as to increase a negative resistance of the main cross-coupled oscillating unit. Accordingly, it is possible to increase a maximum attainable oscillation frequency and to decrease an input capacitance.
摘要翻译：提供电容变性双交叉耦合压控振荡器。电容变性双交叉电压控制振荡器包括主交叉耦合振荡单元，其包括交叉耦合到谐振单元的第一和第二输出节点的振荡晶体管对，以执行振荡操作; 以及辅助交叉耦合振荡单元，其包括交叉耦合到第一和第二输出节点的正反馈晶体管对和主交叉耦合振荡单元的晶体管对，以及连接在正反馈晶体管的发射极之间的退化电容以增加主交叉振荡单元的负电阻。因此，可以增加最大可获得的振荡频率并降低输入电容。

2. 发明申请

US20090134944A1 CAPACITIVE-DEGENERATION DOUBLE CROSS-COUPLED VOLTAGE-CONTROLLED OSCILLATOR 有权
标题翻译：电容式变压器双相交流电压控制振荡器
公开(公告)号：US20090134944A1
公开(公告)日：2009-05-28
申请号：US12114705
申请日：2008-05-02
申请人： Ja Yol Lee , Sang Heung Lee , Hae Cheon Kim , Hyun Kyu Yu
发明人： Ja Yol Lee , Sang Heung Lee , Hae Cheon Kim , Hyun Kyu Yu
IPC分类号： H03B5/12
CPC分类号： H03B5/1231 , H03B5/1212 , H03B5/1215 , H03B5/1221 , H03B5/1253
摘要： A capacitive-degeneration double cross-coupled voltage-controlled oscillator is provided. The capacitive-degeneration double cross-coupled voltage-controlled oscillator includes a main cross-coupled oscillating unit including an oscillation transistor pair cross-coupled to first and second output nodes of a resonating unit to perform an oscillation operation; and an auxiliary cross-coupled oscillating unit including a positive-feedback transistor pair cross-coupled to the first and second output nodes and the transistor pair of the main cross-coupled oscillating unit and a degeneration capacitance connected between emitters of the positive-feedback transistor pair so as to increase a negative resistance of the main cross-coupled oscillating unit. Accordingly, it is possible to increase a maximum attainable oscillation frequency and to decrease an input capacitance.
摘要翻译：提供电容变性双交叉耦合压控振荡器。电容变性双交叉电压控制振荡器包括主交叉耦合振荡单元，其包括交叉耦合到谐振单元的第一和第二输出节点的振荡晶体管对，以执行振荡操作; 以及辅助交叉耦合振荡单元，其包括交叉耦合到第一和第二输出节点的正反馈晶体管对和主交叉耦合振荡单元的晶体管对，以及连接在正反馈晶体管的发射极之间的退化电容以增加主交叉振荡单元的负电阻。因此，可以增加最大可获得的振荡频率并降低输入电容。

3. 发明授权

US08421538B2 Feedback amplifier 有权
标题翻译：反馈放大器
公开(公告)号：US08421538B2
公开(公告)日：2013-04-16
申请号：US13185913
申请日：2011-07-19
申请人： Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
发明人： Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
IPC分类号： H03F3/04
CPC分类号： H03F3/08 , H03F1/34 , H03F3/3432 , H03F2200/121 , H03F2200/141 , H03F2200/18
摘要： Provided is a feedback amplifier including: an amplification circuit unit to generate an output voltage by amplifying an input voltage inputted through an input terminal; an output circuit unit to output the generated output voltage through an output terminal; a feedback circuit unit to control the gain of the amplification circuit unit by determining a total feedback resistance value using an external control signal and controlling an input current while the total feedback resistance value is determined; and a bias circuit unit to apply a bias voltage to the feedback circuit unit.
摘要翻译：提供一种反馈放大器，包括：放大电路单元，通过放大通过输入端子输入的输入电压来产生输出电压; 输出电路单元，用于通过输出端子输出产生的输出电压; 反馈电路单元，其通过使用外部控制信号确定总反馈电阻值来控制放大电路单元的增益，并且在确定总反馈电阻值的同时控制输入电流; 以及偏置电路单元，用于向反馈电路单元施加偏置电压。

4. 发明授权

US08338241B2 Method of manufacturing high frequency device structure 有权
标题翻译：制造高频器件结构的方法
公开(公告)号：US08338241B2
公开(公告)日：2012-12-25
申请号：US13283626
申请日：2011-10-28
申请人： Hyung Sup Yoon , Byoung-Gue Min , Hokyun Ahn , Sang-Heung Lee , Hae Cheon Kim
发明人： Hyung Sup Yoon , Byoung-Gue Min , Hokyun Ahn , Sang-Heung Lee , Hae Cheon Kim
IPC分类号： H01L21/338
CPC分类号： H01L29/7783 , H01L21/8252 , H01L27/0605 , H01L29/42316 , H01L29/66462
摘要： Provided are a method of manufacturing a normally-off mode high frequency device structure and a method of simultaneously manufacturing a normally-on mode high frequency device structure and a normally-off mode high frequency device structure on a single substrate.
摘要翻译：提供一种制造常闭型高频器件结构的方法以及在单个衬底上同时制造常开模式高频器件结构和常关型高频器件结构的方法。

5. 发明授权

US08304859B2 Optical interconnection device 有权
标题翻译：光互连设备
公开(公告)号：US08304859B2
公开(公告)日：2012-11-06
申请号：US12847174
申请日：2010-07-30
申请人： Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
发明人： Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
IPC分类号： H01L21/02 , H01L27/14
CPC分类号： H01L25/167 , G02B6/124 , H01L2224/48091 , H01L2224/48137 , H01L2924/1305 , H01L2924/00014 , H01L2924/00
摘要： Provided is an optical interconnection device. The optical interconnection device include: a first semiconductor chip disposed on a germanium-on-insulator (GOI) substrate; a light emitter on the GOI substrate, the light emitter receiving an electrical signal from the first semiconductor chip and outputting a light signal; a light detector on the GOI substrate, the light detector sensing the light signal and converting the sensed light signal into an electrical signal; and a second semiconductor chip on the GOI substrate, the second semiconductor chip receiving the electrical signal from the light detector.
摘要翻译：提供了一种光互连装置。光学互连装置包括：布置在绝缘体上（锗）绝缘体（GOI）基板上的第一半导体芯片; 在GOI基板上的光发射器，光发射器接收来自第一半导体芯片的电信号并输出光信号; 在GOI基板上的光检测器，光检测器感测光信号并将感测到的光信号转换成电信号; 以及在GOI基板上的第二半导体芯片，第二半导体芯片从光检测器接收电信号。

6. 发明授权

US08058658B2 High-speed optical interconnection device 有权
标题翻译：高速光互连装置
公开(公告)号：US08058658B2
公开(公告)日：2011-11-15
申请号：US12421130
申请日：2009-04-09
申请人： Sang-Heung Lee , Hae Cheon Kim , Dong Min Kang , Dong-Young Kim , Jae Kyoung Mun , Hokyun Ahn , Jong-Won Lim , Woo Jin Chang , Hong Gu Ji , Eun Soo Nam
发明人： Sang-Heung Lee , Hae Cheon Kim , Dong Min Kang , Dong-Young Kim , Jae Kyoung Mun , Hokyun Ahn , Jong-Won Lim , Woo Jin Chang , Hong Gu Ji , Eun Soo Nam
IPC分类号： H01L27/15
CPC分类号： H01L25/167 , H01L2224/0603 , H01L2224/45014 , H01L2224/48137 , H01L2224/4903 , H01L2224/73265 , H01L2924/1305 , H01L2924/30107 , H01L2924/00
摘要： Provided is a high-speed optical interconnection device. The high-speed optical interconnection device includes a first semiconductor chip, light emitters, optical detectors, and a second semiconductor chip, which are disposed on a silicon-on-insulator (SOI) substrate. The light emitters receive electrical signals from the first semiconductor chip to output optical signals. The optical detectors detect the optical signals to convert the optical signals into electrical signals. The second semiconductor chip receives the electrical signals converted by the optical detectors.
摘要翻译：提供了一种高速光互连装置。高速光互连装置包括设置在绝缘体上硅（SOI））衬底上的第一半导体芯片，发光体，光检测器和第二半导体芯片。光发射器接收来自第一半导体芯片的电信号以输出光信号。光检测器检测光信号，将光信号转换为电信号。第二半导体芯片接收由光学检测器转换的电信号。

7. 发明申请

US20100133551A1 HIGH-SPEED OPTICAL INTERCONNECTION DEVICE 有权
标题翻译：高速光学互连器件
公开(公告)号：US20100133551A1
公开(公告)日：2010-06-03
申请号：US12421130
申请日：2009-04-09
申请人： Sang-Heung Lee , Hae Cheon Kim , Dong Min Kang , Dong-Young Kim , Jae-Kyoung Mun , Hokyun Ahn , Jong-Won Lim , Woo Jin Chang , Hong Gu Ji , Eun Soo Nam
发明人： Sang-Heung Lee , Hae Cheon Kim , Dong Min Kang , Dong-Young Kim , Jae-Kyoung Mun , Hokyun Ahn , Jong-Won Lim , Woo Jin Chang , Hong Gu Ji , Eun Soo Nam
IPC分类号： H01L31/147 , H01L33/00
CPC分类号： H01L25/167 , H01L2224/0603 , H01L2224/45014 , H01L2224/48137 , H01L2224/4903 , H01L2224/73265 , H01L2924/1305 , H01L2924/30107 , H01L2924/00
摘要： Provided is a high-speed optical interconnection device. The high-speed optical interconnection device includes a first semiconductor chip, light emitters, optical detectors, and a second semiconductor chip, which are disposed on a silicon-on-insulator (SOI) substrate. The light emitters receive electrical signals from the first semiconductor chip to output optical signals. The optical detectors detect the optical signals to convert the optical signals into electrical signals. The second semiconductor chip receives the electrical signals converted by the optical detectors.
摘要翻译：提供了一种高速光互连装置。高速光互连装置包括设置在绝缘体上硅（SOI））衬底上的第一半导体芯片，发光体，光检测器和第二半导体芯片。光发射器接收来自第一半导体芯片的电信号以输出光信号。光检测器检测光信号，将光信号转换为电信号。第二半导体芯片接收由光学检测器转换的电信号。

8. 发明申请

US20120105158A1 Feedback Amplifier 有权
标题翻译：反馈放大器
公开(公告)号：US20120105158A1
公开(公告)日：2012-05-03
申请号：US13185913
申请日：2011-07-19
申请人： Sang-Heung LEE , Hae Cheon Kim , Eun Soo Nam
发明人： Sang-Heung LEE , Hae Cheon Kim , Eun Soo Nam
IPC分类号： H03F3/04
CPC分类号： H03F3/08 , H03F1/34 , H03F3/3432 , H03F2200/121 , H03F2200/141 , H03F2200/18
摘要： Provided is a feedback amplifier including: an amplification circuit unit to generate an output voltage by amplifying an input voltage inputted through an input terminal; an output circuit unit to output the generated output voltage through an output terminal; a feedback circuit unit to control the gain of the amplification circuit unit by determining a total feedback resistance value using an external control signal and controlling an input current while the total feedback resistance value is determined; and a bias circuit unit to apply a bias voltage to the feedback circuit unit.
摘要翻译：提供一种反馈放大器，包括：放大电路单元，通过放大通过输入端子输入的输入电压来产生输出电压; 输出电路单元，用于通过输出端子输出产生的输出电压; 反馈电路单元，其通过使用外部控制信号确定总反馈电阻值来控制放大电路单元的增益，并且在确定总反馈电阻值的同时控制输入电流; 以及偏置电路单元，用于向反馈电路单元施加偏置电压。

9. 发明申请

US20110037078A1 OPTICAL INTERCONNECTION DEVICE 有权
标题翻译：光学互连器件
公开(公告)号：US20110037078A1
公开(公告)日：2011-02-17
申请号：US12847174
申请日：2010-07-30
申请人： Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
发明人： Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
IPC分类号： H01L31/12
CPC分类号： H01L25/167 , G02B6/124 , H01L2224/48091 , H01L2224/48137 , H01L2924/1305 , H01L2924/00014 , H01L2924/00
摘要： Provided is an optical interconnection device. The optical interconnection device include: a first semiconductor chip disposed on a germanium-on-insulator (GOI) substrate; a light emitter on the GOI substrate, the light emitter receiving an electrical signal from the first semiconductor chip and outputting a light signal; a light detector on the GOI substrate, the light detector sensing the light signal and converting the sensed light signal into an electrical signal; and a second semiconductor chip on the GOI substrate, the second semiconductor chip receiving the electrical signal from the light detector.
摘要翻译：提供了一种光互连装置。光学互连装置包括：布置在绝缘体上（锗）绝缘体（GOI）基板上的第一半导体芯片; 在GOI基板上的光发射器，光发射器接收来自第一半导体芯片的电信号并输出光信号; 在GOI基板上的光检测器，光检测器感测光信号并将感测到的光信号转换成电信号; 以及在GOI基板上的第二半导体芯片，第二半导体芯片从光检测器接收电信号。

10. 发明授权

US08586462B2 Method of manufacturing a field-effect transistor 有权
标题翻译：制造场效应晶体管的方法
公开(公告)号：US08586462B2
公开(公告)日：2013-11-19
申请号：US13307069
申请日：2011-11-30
申请人： Hokyun Ahn , Jong-Won Lim , Hyung Sup Yoon , Byoung-Gue Min , Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
发明人： Hokyun Ahn , Jong-Won Lim , Hyung Sup Yoon , Byoung-Gue Min , Sang-Heung Lee , Hae Cheon Kim , Eun Soo Nam
IPC分类号： H01L29/808 , H01L21/283
CPC分类号： H01L29/7831 , H01L29/2003 , H01L29/404 , H01L29/42316 , H01L29/66462 , H01L29/66863 , H01L29/7787 , H01L29/812
摘要： Disclosed are a method of manufacturing a field-effect transistor. The disclosed method includes: providing a semiconductor substrate; forming a source ohmic metal layer on one side of the semiconductor substrate; forming a drain ohmic metal layer on another side of the semiconductor substrate; forming a gate electrode between the source ohmic metal layer and the drain ohmic metal layer, on an upper portion of the semiconductor substrate; forming an insulating film on the semiconductor substrate's upper portion including the source ohmic metal layer, the drain ohmic metal layer and the gate electrode; and forming a plurality of field electrodes on an upper portion of the insulating film, wherein the insulating film below the respective field electrodes has different thicknesses.
摘要翻译：公开了一种制造场效晶体管的方法。所公开的方法包括：提供半导体衬底; 在半导体衬底的一侧上形成源极欧姆金属层; 在所述半导体衬底的另一侧上形成漏极欧姆金属层; 在所述源欧姆金属层和所述漏极欧姆金属层之间形成栅电极，在所述半导体衬底的上部; 在包括源欧姆金属层，漏极欧姆金属层和栅电极的半导体衬底的上部上形成绝缘膜; 以及在绝缘膜的上部形成多个场电极，其中各个场电极下方的绝缘膜具有不同的厚度。

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