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1. 发明授权

US06570898B2 Structure and method for index-guided buried heterostructure AlGalnN laser diodes 有权
公开(公告)号：US06570898B2
公开(公告)日：2003-05-27
申请号：US09408458
申请日：1999-09-29
申请人： David P. Bour , Michael A. Kneissl , Linda T. Romano , Thomas L. Paoli , Christian G. Van de Walle
发明人： David P. Bour , Michael A. Kneissl , Linda T. Romano , Thomas L. Paoli , Christian G. Van de Walle
IPC分类号： H01S500
CPC分类号： H01S5/32341 , H01S5/2004 , H01S5/2275 , H01S2301/18 , H01S2304/00
摘要： An index-guided buried heterostructure AlGaInN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures.

2. 发明授权

US06567443B2 Structure and method for self-aligned, index-guided, buried heterostructure AlGalnN laser diodes 有权
标题翻译： AlCalnN激光二极管的自对准，折射率引导，掩埋异质结构的结构和方法
公开(公告)号：US06567443B2
公开(公告)日：2003-05-20
申请号：US09408415
申请日：1999-09-29
申请人： David P. Bour , Michael A. Kneissl , Linda T. Romano , Thomas L. Paoli , Christian G. Van de Walle
发明人： David P. Bour , Michael A. Kneissl , Linda T. Romano , Thomas L. Paoli , Christian G. Van de Walle
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/2218 , H01S5/2222 , H01S5/2275 , H01S5/3211 , H01S5/34333
摘要： A self aligned, index-guided, buried heterostructure AlGalnN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures. The comparatively large p-contact area allowed by the self-aligned architecture contributes to a lower diode voltage and less heat during continuous wave operation of the laser diode.
摘要翻译：与传统的脊波导结构相比，自对准，折射率引导，埋入异质结AlGalnN激光二极管提供了改进的模式稳定性和低阈值电流。短周期超晶格用于允许足够的包层厚度进行约束而不会开裂。与常规结构相比，由于泄漏而损失的光的强度降低了约2个数量级，伴随着远场辐射图的改进。自对准结构允许的较大的p接触面积有助于在激光二极管的连续波动操作期间较低的二极管电压和较少的热量。

3. 发明授权

US06389051B1 Structure and method for asymmetric waveguide nitride laser diode 有权
公开(公告)号：US06389051B1
公开(公告)日：2002-05-14
申请号：US09343939
申请日：1999-06-30
申请人： Christian G. Van de Walle , David P. Bour , Michael A. Kneissl , Linda T. Romano
发明人： Christian G. Van de Walle , David P. Bour , Michael A. Kneissl , Linda T. Romano
IPC分类号： H01S520
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/2009 , H01S5/2031 , H01S5/305 , H01S5/3054 , H01S5/34333
摘要： A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided.

4. 发明授权

US07123637B2 Nitride-based laser diode with GaN waveguide/cladding layer 有权
标题翻译：氮化镓基激光二极管与GaN波导/包层
公开(公告)号：US07123637B2
公开(公告)日：2006-10-17
申请号：US10394559
申请日：2003-03-20
申请人： Michael A. Kneissl , David P. Bour , Linda T. Romano , Christian G. Van de Walle
发明人： Michael A. Kneissl , David P. Bour , Linda T. Romano , Christian G. Van de Walle
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/2009 , H01S5/2205 , H01S5/2231 , H01S5/3213 , H01S5/34333
摘要： A nitride-based laser diode structure utilizing a single GaN:Mg waveguide/cladding layer, in place of separate GaN:Mg waveguide and AlGaN:Mg cladding layers used in conventional nitride-based laser diode structures. When formed using an optimal thickness, the GaN:Mg layer produces an optical confinement that is comparable to or better than conventional structures. A thin AlGaN tunnel barrier layer is provided between the multiple quantum well and a lower portion of the GaN:Mg waveguide layer, which suppresses electron leakage without any significant decrease in optical confinement. A split-metal electrode is formed on the GaN:Mg upper waveguide structure to avoid absorption losses in the upper electrode metal. A pair of AlGaN:Si current blocking layer sections are located below the split-metal electrode sections, and separated by a gap located over the active region of the multiple quantum well.
摘要翻译：使用单个GaN：Mg波导/包覆层的氮化物基激光二极管结构代替用于常规氮化物基激光二极管结构中的单独的GaN：Mg波导和AlGaN：Mg包覆层。当使用最佳厚度形成时，GaN：Mg层产生与传统结构相当或更好的光学约束。在多量子阱和GaN：Mg波导层的下部之间提供薄的AlGaN隧道势垒层，其抑制电子泄漏，而不会明显减少光学限制。在GaN：Mg上部波导结构上形成裂缝金属电极，以避免上部电极金属中的吸收损失。一对AlGaN：Si电流阻挡层部分位于裂缝金属电极部分下方，并被位于多量子阱的有源区上方的间隙分开。

5. 发明授权

US06430202B1 Structure and method for asymmetric waveguide nitride laser diode 有权
标题翻译：非对称波导氮化物激光二极管的结构和方法
公开(公告)号：US06430202B1
公开(公告)日：2002-08-06
申请号：US09288879
申请日：1999-04-09
申请人： Christian G. Van de Walle , David P. Bour , Michael A. Kneissl , Linda T. Romano
发明人： Christian G. Van de Walle , David P. Bour , Michael A. Kneissl , Linda T. Romano
IPC分类号： H01S520
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/2009 , H01S5/2031 , H01S5/305 , H01S5/3054 , H01S5/34333 , H01S2301/18
摘要： A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided.
摘要翻译：公开了一种不需要p型波导的不对称波导氮化物激光二极管的结构和方法。避免了在激光器中需要高的铝隧道阻挡层。

6. 发明授权

US06541292B2 Method for forming an asymmetric nitride laser diode 有权
公开(公告)号：US06541292B2
公开(公告)日：2003-04-01
申请号：US09998335
申请日：2001-12-03
申请人： Christian G. Van de Walle , David P. Bour , Michael A. Kneissl , Linda T. Romano
发明人： Christian G. Van de Walle , David P. Bour , Michael A. Kneissl , Linda T. Romano
IPC分类号： H01L2100
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/2009 , H01S5/2031 , H01S5/305 , H01S5/3054 , H01S5/34333 , H01S2301/18
摘要： A structure and method for an asymmetric waveguide nitride laser diode without need of a p-type waveguide is disclosed. The need for a high aluminum tunnel barrier layer in the laser is avoided.

7. 发明授权

US06574256B1 Distributed feedback laser fabricated by lateral overgrowth of an active region 有权
标题翻译：通过有源区域的横向过度生长制造的分布式反馈激光器
公开(公告)号：US06574256B1
公开(公告)日：2003-06-03
申请号：US09487409
申请日：2000-01-18
申请人： Daniel Hofstetter , Thomas L. Paoli , Linda T. Romano , Decai Sun , David P. Bour , Michael A. Kneissl , Chris G. Van de Walle , Noble M. Johnson
发明人： Daniel Hofstetter , Thomas L. Paoli , Linda T. Romano , Decai Sun , David P. Bour , Michael A. Kneissl , Chris G. Van de Walle , Noble M. Johnson
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0213 , H01S5/1228 , H01S5/2009 , H01S5/34333 , H01S2304/12
摘要： A distributed feedback structure includes a substrate material. An active layer has an alloy including at least one of aluminum, gallium, indium, and nitrogen. A first cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a first side of the active layer. A second cladding, having an alloy including at least one of the aluminum, the gallium, the indium, and the nitrogen, is on a second side of the active layer. Periodic variations of refractive indices in at least one of the first and second claddings provide a distributed optical feedback.
摘要翻译：分布式反馈结构包括基板材料。有源层具有包括铝，镓，铟和氮中的至少一种的合金。具有包括铝，镓，铟和氮中的至少一种的合金的第一包层位于有源层的第一侧上。具有包括铝，镓，铟和氮中的至少一种的合金的第二覆层位于有源层的第二侧上。在第一和第二包层中的至少一个中的折射率的周期性变化提供分布式光学反馈。

8. 发明授权

US06990132B2 Laser diode with metal-oxide upper cladding layer 有权
标题翻译：具有金属氧化物上覆层的激光二极管
公开(公告)号：US06990132B2
公开(公告)日：2006-01-24
申请号：US10394560
申请日：2003-03-20
申请人： Michael A. Kneissl , Linda T. Romano , Christian G. Van de Walle
发明人： Michael A. Kneissl , Linda T. Romano , Christian G. Van de Walle
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/2004 , H01S5/22 , H01S5/3214 , H01S5/343 , H01S5/34333
摘要： A nitride-based laser diode structure utilizing a metal-oxide (e.g., Indium-Tin-Oxide (ITO) or Zinc-Oxide (ZnO)) in place of p-doped AlGaN to form the upper cladding layer. An InGaN laser diode structure utilizes ITO upper cladding structure, with an SiO2 isolation structure formed on opposite sides of the ITO upper cladding structure to provide a lateral index step that is large enough to enable lateral single-mode operation. The lateral index step is further increased by slightly etching the GaN:Mg waveguide layer below the SiO2 isolation structure. An optional p-type current barrier layer (e.g., AlGaN:Mg having a thickness of approximately 20 nm) is formed between the InGaN-MQW region and a p-GaN upper waveguide layer to impede electron leakage from the InGaN-MQW region.
摘要翻译：使用金属氧化物（例如，铟锡氧化物（ITO）或氧化锌（ZnO））代替掺杂p型AlGaN的氮化物基激光二极管结构以形成上覆层。 InGaN激光二极管结构利用ITO上部包层结构，在ITO上部包层结构的相对侧上形成SiO 2隔离结构，以提供足够大的横向折射率步骤，以实现侧向单模操作。通过稍微蚀刻在SiO 2隔离结构之下的GaN：Mg波导层，进一步增加横向折射率梯度。在InGaN-MQW区和p-GaN上波导层之间形成可选的p型电流阻挡层（例如，厚度约为20nm的AlGaN：Mg），以阻止来自InGaN-MQW区的电子泄漏。

9. 发明授权

US06875627B2 Structure and method for index-guided buried heterostructure AlGaInN laser diodes 有权
标题翻译：折射率引导掩埋异质结AlGaInN激光二极管的结构与方法
公开(公告)号：US06875627B2
公开(公告)日：2005-04-05
申请号：US10025462
申请日：2001-12-26
申请人： David P. Bour , Michael A. Kneissl , Linda T. Romano
发明人： David P. Bour , Michael A. Kneissl , Linda T. Romano
IPC分类号： H01S5/227 , H01S5/20 , H01S5/323 , H01S5/343 , H01L21/20
CPC分类号： H01S5/32341 , H01S5/2004 , H01S5/2275 , H01S2301/18 , H01S2304/00
摘要： An index-guided buried heterostructure AlGalnN laser diode provides improved mode stability and low threshold current when compared to conventional ridge waveguide structures. A short period superlattice is used to allow adequate cladding layer thickness for confinement without cracking. The intensity of the light lost due to leakage is reduced by about 2 orders of magnitude with an accompanying improvement in the far-field radiation pattern when compared to conventional structures.
摘要翻译：与传统的脊波导结构相比，索引引导掩埋异质结AlGalnN激光二极管提供了改进的模式稳定性和低阈值电流。短周期超晶格用于允许足够的包层厚度进行约束而不会开裂。与常规结构相比，由于泄漏而损失的光的强度降低了约2个数量级，伴随着远场辐射图的改进。

10. 发明授权

US06365429B1 Method for nitride based laser diode with growth substrate removed using an intermediate substrate 有权
标题翻译：使用中间基板去除生长衬底的基于氮化物的激光二极管的方法
公开(公告)号：US06365429B1
公开(公告)日：2002-04-02
申请号：US09276856
申请日：1999-03-26
申请人： Michael A. Kneissl , David P. Bour , Ping Mei , Linda T. Romano
发明人： Michael A. Kneissl , David P. Bour , Ping Mei , Linda T. Romano
IPC分类号： H01L2100
CPC分类号： H01L21/6835 , B82Y20/00 , H01L21/2007 , H01L27/153 , H01L33/0079 , H01L2221/68359 , H01L2221/68368 , H01L2224/83192 , H01L2224/83895 , H01L2924/01079 , H01S5/0217 , H01S5/34333 , H01S5/4025 , H01S5/4031
摘要： A method for placing nitride laser diode arrays on a thermally conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after an intermediate substrate has been attached to the side opposite the sapphire substrate. A thermally conducting substrate is subsequently bonded to the side where the sapphire substrate was removed.
摘要翻译：描述了将氮化物激光二极管阵列放置在导热衬底上的方法。该方法使用准分子激光器在将中间衬底附着到与蓝宝石衬底相对的一侧附近后从蓝宝石生长衬底分离氮化物激光二极管。导热衬底随后与去除蓝宝石衬底的一侧接合。

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