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1. 发明授权

US4076557A Method for providing semiconductor devices 失效
标题翻译：提供半导体器件的方法
公开(公告)号：US4076557A
公开(公告)日：1978-02-28
申请号：US715737
申请日：1976-08-19
申请人： Jack S. T. Huang , Susumu Kohyama
发明人： Jack S. T. Huang , Susumu Kohyama
IPC分类号： H01L29/762 , H01L21/033 , H01L21/308 , H01L21/339 , H01L21/8234 , H01L29/10 , H01L21/26
CPC分类号： H01L29/66954 , H01L21/033 , H01L21/823406 , H01L29/1062
摘要： Methods are disclosed for providing self-aligned barrier and conductor regions in conductively connected charge-coupled devices.
摘要翻译：公开了用于在导电连接的电荷耦合器件中提供自对准势垒和导体区域的方法。

2. 发明授权

US4181865A Sensing circuit for a multi-level signal charge 失效
标题翻译：用于多电平信号电荷的感应电路
公开(公告)号：US4181865A
公开(公告)日：1980-01-01
申请号：US900860
申请日：1978-04-28
申请人： Susumu Kohyama
发明人： Susumu Kohyama
IPC分类号： G11C11/56 , G11C19/28 , G11C19/36 , G11C27/04 , H03H11/26 , H03K3/353 , H03K5/08 , H03K5/20 , G11C7/06 , H03K3/286
CPC分类号： G11C11/565 , G11C19/285 , G11C19/36 , G11C11/5642
摘要： This multi-level signal charge sensing circuit includes a first capacitor for holding inspected charge, a second capacitor for holding a plurality of reference charge levels and a comparator for comparing potentials produced at the first and second capacitors. As the plurality of reference charge levels, (N-1) charge levels of different known values are prepared. The inspected charge is given to the first capacitor which is reset, and the (N-1) reference charge levels are successively given from the highest or lowest level to the second capacitor which is also reset. The comparator is operated for every step of supplying each reference charge level. Of the successive reference charge supplying steps at an instant between the steps corresponding to 0 and (N-1), the output state of the comparator is inverted, thus supplying digital information representing the inspected charge level. This sensing circuit permits discrimination and sensing or detection of N different inspected charge levels with a single circuit construction.
摘要翻译：该多电平信号电荷感测电路包括用于保持检查电荷的第一电容器，用于保持多个参考电荷电平的第二电容器和用于比较在第一和第二电容器产生的电位的比较器。作为多个参考电荷电平，准备不同已知值的（N-1）电荷电平。对被复位的第一电容器进行检查的电荷，并且从最高或最低电平连续给出也被复位的第二电容器的（N-1）基准电荷电平。比较器为每个参考电荷电平的每个步骤运行。在对应于0和（N-1）的步骤之间的时刻的连续参考电荷提供步骤中，比较器的输出状态被反转，从而提供表示检查的充电电平的数字信息。该感测电路允许使用单个电路结构来区分和检测N个不同的检查电荷水平。

3. 发明授权

US4280067A Semiconductor charge transfer device having a decoupling gate for stopping reverse charge flow 失效
标题翻译：具有用于停止反向电荷流的去耦门的半导体电荷转移装置
公开(公告)号：US4280067A
公开(公告)日：1981-07-21
申请号：US39123
申请日：1979-05-15
申请人： Susumu Kohyama
发明人： Susumu Kohyama
IPC分类号： G11C11/56 , G11C19/28 , G11C27/04 , H01L21/339 , H01L27/105 , H01L29/762 , H01L29/768 , H01L29/78
CPC分类号： H01L29/76816 , G11C19/285 , H01L27/1057
摘要： A semiconductor charge transfer device comprising: a semiconductor charge transfer element including a plurality of transfer electrodes on an insulating layer formed on a semiconductor substrate and a detection node formed on the semiconductor substrate; potential barrier means for signal charge packets transfer provided between the final stage cell of the semiconductor charge transfer element and the detection node; and a differential detecting circuit of flip-flop type having a drive transistor directly coupled with the detection node, wherein the potential barrier means provides a potential barrier against the low level of the detection node when the drive transistor is conductive.
摘要翻译：一种半导体电荷转移装置，包括：半导体电荷转移元件，包括在半导体衬底上形成的绝缘层上的多个转移电极和形成在所述半导体衬底上的检测节点; 提供在半导体电荷转移元件的最后级单元与检测节点之间的信号电荷分组传送的势垒装置; 以及具有与检测节点直接耦合的驱动晶体管的触发器类型的差分检测电路，其中当驱动晶体管导通时，势垒装置提供抵抗检测节点的低电平的势垒。

4. 发明授权

US4754320A EEPROM with sidewall control gate 失效
标题翻译：带侧壁控制门的EEPROM
公开(公告)号：US4754320A
公开(公告)日：1988-06-28
申请号：US832580
申请日：1986-02-24
申请人： Yoshihisa Mizutani , Susumu Kohyama , Koji Makita
发明人： Yoshihisa Mizutani , Susumu Kohyama , Koji Makita
IPC分类号： H01L21/28 , H01L21/8247 , H01L29/788 , H01L29/78 , H01L29/44
CPC分类号： H01L27/11526 , H01L21/2815 , H01L21/28273 , H01L27/11517 , H01L27/11543 , H01L29/7885 , Y10S257/90
摘要： A semiconductor device, and more particularly, an erasable programmable read only memory has a control gate electrode and a floating gate electrode. The floating gate electrode is formed on one side wall of the control gate electrode through an insulating film.
摘要翻译：更具体地，可擦除可编程只读存储器的半导体器件具有控制栅电极和浮栅电极。浮栅电极通过绝缘膜形成在控制栅电极的一个侧壁上。

5. 发明授权

US4215357A Charge transfer device stored with fixed information 失效
标题翻译：电荷转移装置存储有固定信息
公开(公告)号：US4215357A
公开(公告)日：1980-07-29
申请号：US23184
申请日：1979-03-23
申请人： Susumu Kohyama , Nobuhisa Kubota
发明人： Susumu Kohyama , Nobuhisa Kubota
IPC分类号： G11C17/00 , G11C11/35 , G11C19/28 , G11C27/04 , H01L21/339 , H01L29/10 , H01L29/423 , H01L29/762 , H01L29/768 , H01L29/78 , H01L29/04 , H03K5/00
CPC分类号： H01L29/42396 , G11C11/35 , G11C19/282 , H01L29/1062 , H01L29/76875
摘要： A charge transfer device has a means for grouping a charge transfer section of a semiconductor substrate into a plurality of semiconductor regions each provided with a plurality of charge transfer electrodes and storing a fixed information, predetermined correspondingly to a combination of surface potential levels to be formed at semiconductor subregions under the electrodes on each semiconductor region, in such semiconductor region.
摘要翻译：电荷转移装置具有用于将半导体基板的电荷转移部分分成多个半导体区域的装置，每个半导体区域设置有多个电荷转移电极并且存储与要形成的表面电位水平的组合相对应的固定信息在半导体区域中的每个半导体区域上的电极下的半导体子区域。

6. 发明授权

US4395433A Method for manufacturing a semiconductor device having regions of different thermal conductivity 失效
标题翻译：制造具有不同导热性区域的半导体器件的方法
公开(公告)号：US4395433A
公开(公告)日：1983-07-26
申请号：US207934
申请日：1980-11-18
申请人： Yoshihide Nagakubo , Susumu Kohyama
发明人： Yoshihide Nagakubo , Susumu Kohyama
IPC分类号： H01L29/78 , H01L21/20 , H01L21/205 , H01L21/263 , H01L21/268 , H01L21/762 , H01L23/522 , H01L21/26
CPC分类号： H01L21/762 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639 , H01L21/2636 , H01L21/268 , H01L23/522 , H01L2924/0002 , Y10S148/091 , Y10S148/093
摘要： In gas phase growth of a polysilicon layer on a semiconductor substrate, a silicon layer of a single-crystal structure or a structure akin thereto may be formed only on an exposed surface of the substrate surrounded by an insulating film for element isolation by applying an energy beam to the substrate. A semiconductor device obtained by forming such an element as an MOS transistor on the silicon layer is free from any difference in level between an element region and an element isolation region, and hence from snapping or disconnection of any wiring traversing the boundary between those regions.
摘要翻译：在半导体衬底上的多晶硅层的气相生长中，单晶结构或类似结构的硅层可以仅形成在由用于元件隔离的绝缘膜包围的衬底的暴露表面上，该绝缘膜通过施加能量光束到基板。通过在硅层上形成诸如MOS晶体管的元件而获得的半导体器件在元件区域和元件隔离区域之间没有任何水平差异，并且因此在穿过这些区域之间的边界的任何布线的卡扣或断开。

7. 发明授权

US4211937A Multi-channel charge coupled transfer device 失效
标题翻译：多通道电荷耦合传输装置
公开(公告)号：US4211937A
公开(公告)日：1980-07-08
申请号：US955212
申请日：1978-10-27
申请人： Susumu Kohyama
发明人： Susumu Kohyama
IPC分类号： G11C19/28 , H01L27/105 , H01L29/78 , H03K5/00
CPC分类号： H01L27/1057 , G11C19/282 , G11C19/287
摘要： An electrode per bit (E/B) structure type charge transfer device in which N storage cell each consisting of a barrier region and a storage region are driven by N-phase clocks, one of N storage cells being empty and the remaining N-1 cells storing signal charge packets. The N-phase clocks are biased to a low level for storage and pulsed to a high level for transfer. The N storage cells are successively rendered in the transfer mode in the direction opposite to the charge transfer direction so that the empty cell is shifted to the adjacent preceding cell in the direction opposite to the charge transfer direction every time each of the N-phase clocks is pulsed. After one cycle of the N-phase clocks, all the signal charge packets are shifted to the succeeding cells respectively. A multiplexed electrode per bit (ME/B) structure type charge transfer device also is disclosed which employs the E/B structure and is operable by the clocks with small number of phases, providing a CCD memory with a large capacity.
摘要翻译：每个由位置（E / B）结构的电荷转移装置，其中由存储区域和存储区域组成的N个存储单元由N相时钟驱动，N个存储单元之一为空，而剩余的N-1 存储信号电荷包的单元。 N相时钟偏置为低电平存储，并且脉冲到高电平以进行传输。 N个存储单元在与电荷传输方向相反的方向上以传送模式连续呈现，使得每个N相时钟每次，空单元在与电荷传输方向相反的方向上移位到相邻的前一单元是脉冲的。在N相时钟的一个周期之后，所有的信号电荷分组分别移动到后续的信元。公开了一种使用E / B结构的每位多路复用电极（ME / B）结构型电荷转移装置，可由具有少量相位的时钟操作，提供具有大容量的CCD存储器。

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