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1. 发明申请

US20170322492A1 RESIST PATTERN-FORMING METHOD 审中-公开
公开(公告)号：US20170322492A1
公开(公告)日：2017-11-09
申请号：US15440299
申请日：2017-02-23
申请人： JSR Corporation
发明人： Yusuke ANNO , Takashi Mori , Hirokazu Sakakibara , Taiichi Furukawa , Kazunori Takanashi , Hiromitsu Tanaka , Shin-ya Minegishi
IPC分类号： G03F7/16 , G03F7/30 , G03F7/20 , G03F7/09 , G03F7/075 , G03F7/32 , G03F7/039
CPC分类号： G03F7/16 , G03F7/0397 , G03F7/0751 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/20 , G03F7/30 , G03F7/325
摘要： A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (al) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

2. 发明申请

US20190155162A1 PATTERN-FORMING METHOD AND COMPOSITION FOR RESIST PATTERN-REFINEMENT 审中-公开
公开(公告)号：US20190155162A1
公开(公告)日：2019-05-23
申请号：US16251458
申请日：2019-01-18
申请人： JSR CORPORATION
发明人： Kanako MEYA , Yusuke ANNO , Ken MARUYAMA , Shuto MORI
IPC分类号： G03F7/40 , G03F7/039 , H01L21/027 , G03F7/32
摘要： A pattern-forming method comprises forming a prepattern that is insoluble or hardly soluble in an organic solvent. A first composition is applied on at least lateral faces of the prepattern to fort i a resin layer.Adjacent regions to the prepattern of the resin layer are insolubilized or desolubilized in the organic solvent without being accompanied by an increase in a molecular weight by heating the prepattern and the resin layer. Regions other than the adjacent regions insolubilized or desolubilized of the resin layer are removed with the organic solvent. The first composition comprises a first polymer having a solubility in the organic solvent to be decreased by an action of an acid. At least one selected from the following features (i) and (ii) is satisfied: (i) the first polymer comprises a basic group; and (ii) the first composition further comprises a basic compound.

3. 发明申请

US20150050600A9 RESIST PATTERN-FORMING METHOD 审中-公开
公开(公告)号：US20150050600A9
公开(公告)日：2015-02-19
申请号：US14158160
申请日：2014-01-17
申请人： JSR Corporation
发明人： Yusuke ANNO , Takashi MORI , Hirokazu SAKAKIBARA , Taiichi FURUKAWA , Kazunori TAKANASHI , Hiromitsu TANAKA , Shin-ya MINEGISHI
IPC分类号： G03F7/20
CPC分类号： G03F7/16 , G03F7/0397 , G03F7/0751 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/20 , G03F7/30 , G03F7/325
摘要： A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

4. 发明申请

US20150160556A1 RESIST PATTERN-FORMING METHOD 审中-公开
标题翻译：电阻形成方法
公开(公告)号：US20150160556A1
公开(公告)日：2015-06-11
申请号：US14627670
申请日：2015-02-20
申请人： JSR Corporation
发明人： Yusuke ANNO , Takashi MORI , Hirokazu SAKAKIBARA , Taiichi FURUKAWA , Kazunori TAKANASHI , Hiromitsu TANAKA , Shin-ya MINEGISHI
IPC分类号： G03F7/16 , G03F7/30
CPC分类号： G03F7/16 , G03F7/0397 , G03F7/0751 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/20 , G03F7/30 , G03F7/325
摘要： A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.
摘要翻译：抗蚀剂图案形成方法包括将抗蚀剂下层膜形成组合物施加到基底上以形成抗蚀剂下层膜。抗蚀剂下层膜形成组合物包含（A）聚硅氧烷。将抗辐射敏感树脂组合物施加到抗蚀剂下层膜上以形成抗蚀剂膜。辐射敏感性树脂组合物包含（a1）由于酸而导致极性变化和在有机溶剂中溶解度降低的聚合物。抗蚀剂膜被曝光。使用包含有机溶剂的显影剂显影曝光的抗蚀剂膜。

5. 发明申请

US20140134544A1 RESIST PATTERN-FORMING METHOD 审中-公开
标题翻译：电阻形成方法
公开(公告)号：US20140134544A1
公开(公告)日：2014-05-15
申请号：US14158160
申请日：2014-01-17
申请人： JSR Corporation
发明人： Yusuke ANNO , Takashi MORI , Hirokazu SAKAKIBARA , Taiichi FURUKAWA , Kazunori TAKANASHI , Hiromitsu TANAKA , Shin-ya MINEGISHI
IPC分类号： G03F7/20
CPC分类号： G03F7/16 , G03F7/0397 , G03F7/0751 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/20 , G03F7/30 , G03F7/325
摘要： A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.
摘要翻译：抗蚀剂图案形成方法包括将抗蚀剂下层膜形成组合物施加到基底上以形成抗蚀剂下层膜。抗蚀剂下层膜形成组合物包含（A）聚硅氧烷。将抗辐射敏感树脂组合物施加到抗蚀剂下层膜上以形成抗蚀剂膜。辐射敏感性树脂组合物包含（a1）由于酸而导致极性变化和在有机溶剂中溶解度降低的聚合物。抗蚀剂膜被曝光。使用包含有机溶剂的显影剂显影曝光的抗蚀剂膜。

6. 发明申请

US20130022912A1 RADIATION-SENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, POLYMER AND COMPOUND 审中-公开
标题翻译：辐射敏感性树脂组合物，形成耐火图案的方法，聚合物和化合物
公开(公告)号：US20130022912A1
公开(公告)日：2013-01-24
申请号：US13629992
申请日：2012-09-28
申请人： JSR CORPORATION
发明人： Mitsuo SATO , Yusuke ANNO , Hiromitsu NAKASHIMA
IPC分类号： C08F222/18 , G03F7/20 , C07C69/653 , G03F7/004
CPC分类号： G03F7/0397 , C08F220/28 , G03F7/0046 , G03F7/0382 , G03F7/2041
摘要： A radiation-sensitive resin composition includes a first polymer having a structural unit represented by a following formula (1), and a radiation-sensitive acid generator. RC in the formula (1) preferably represents an aliphatic polycyclic hydrocarbon group having a valency of (n+1) and having 4 to 30 carbon atoms. The structural unit represented by the formula (1) is preferably a structural unit represented by a n following formula (1-1).
摘要翻译：辐射敏感性树脂组合物包括具有由下式（1）表示的结构单元的第一聚合物和辐射敏感性酸产生剂。式（1）中的RC优选表示具有（n + 1）价的且具有4〜30个碳原子的脂肪族多环烃基。由式（1）表示的结构单元优选为由下式（1-1）表示的结构单元。

7. 发明公开

US20230340266A1 SILICON-CONTAINING COMPOSITION AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE 审中-公开
公开(公告)号：US20230340266A1
公开(公告)日：2023-10-26
申请号：US18198954
申请日：2023-05-18
申请人： JSR CORPORATION
发明人： Tomoaki SEKO , Yusuke ANNO , Akitaka NII , Ryuichi NEMOTO , Souta NISHIMURA
IPC分类号： G03F7/32 , C08L83/04 , G03F7/11 , G03F7/20
CPC分类号： C08L83/04 , G03F7/11 , G03F7/322 , G03F7/70025 , G03F7/70033 , C08L2203/20
摘要： A silicon-containing composition includes: a polysiloxane including a first structural unit represented by formula (1); and a solvent. X is an alkali-dissociable group; a is an integer of 1 to 3; and when a is 2 or more, a plurality of Xs are the same or different from each other. R1 is a monovalent organic group having 1 to 20 carbon atoms, a hydroxy group, or a halogen atom; b is an integer of 0 to 2; and when b is 2, two R1s are the same or different from each other. a + b is 3 or less.

8. 发明申请

US20160291462A1 PATTERN-FORMING METHOD AND COMPOSITION FOR RESIST PATTERN-REFINEMENT 审中-公开
标题翻译：形成图案的图案形成方法和组合
公开(公告)号：US20160291462A1
公开(公告)日：2016-10-06
申请号：US15082389
申请日：2016-03-28
申请人： JSR CORPORATION
发明人： Kanako MEYA , Yusuke ANNO , Ken MARUYAMA , Shuto MORI
IPC分类号： G03F7/00 , H01L21/027 , G03F7/40
CPC分类号： G03F7/40 , G03F7/0397 , G03F7/325 , G03F7/405 , H01L21/0273
摘要： A pattern-forming method comprises forming a prepattern that is insoluble or hardly soluble in an organic solvent. A first composition is applied on at least lateral faces of the prepattern to form a resin layer. Adjacent regions to the prepattern of the resin layer are insolubilized or desolubilized in the organic solvent without being accompanied by an increase in a molecular weight by heating the prepattern and the resin layer. Regions other than the adjacent regions insolubilized or desolubilized of the resin layer are removed with the organic solvent. The first composition comprises a first polymer having a solubility in the organic solvent to be decreased by an action of an acid. At least one selected from the following features (i) and (ii) is satisfied: (i) the first polymer comprises a basic group; and (ii) the first composition further comprises a basic compound.
摘要翻译：图案形成方法包括形成不溶于或几乎不溶于有机溶剂的预模式。将第一组合物涂覆在预制图案的至少侧面上以形成树脂层。与树脂层的预制图相邻的区域在有机溶剂中不溶或脱溶，而不伴随着预加图案和树脂层的分子量的增加。用有机溶剂除去除了树脂层不溶或去溶解的相邻区域以外的区域。第一组合物包含在有机溶剂中具有通过酸作用而降低的第一聚合物。选自以下特征（i）和（ii）中的至少一种：（i）第一聚合物包含碱性基团; 和（ii）第一组合物还包含碱性化合物。

9. 发明申请

US20160097978A1 RESIST PATTERN-FORMING METHOD 审中-公开
公开(公告)号：US20160097978A1
公开(公告)日：2016-04-07
申请号：US14877357
申请日：2015-10-07
申请人： JSR Corporation
发明人： Yusuke ANNO , Takashi MORI , Hirokazu SAKAKIBARA , Taiichi FURUKAWA , Kazunori TAKANASHI , Hiromitsu TANAKA , Shin-ya MINEGISHI
IPC分类号： G03F7/32 , G03F7/20
CPC分类号： G03F7/16 , G03F7/0397 , G03F7/0751 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/20 , G03F7/30 , G03F7/325
摘要： A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

10. 发明申请

US20160320705A1 RESIST PATTERN-FORMING METHOD 审中-公开
公开(公告)号：US20160320705A1
公开(公告)日：2016-11-03
申请号：US15210643
申请日：2016-07-14
申请人： JSR Corporation
发明人： Yusuke ANNO , Takashi MORI , Hirokazu SAKAKIBARA , Taiichi FURUKAWA , Kazunori TAKANASHI , Hiromitsu TANAKA , Shin-ya MINEGISHI
IPC分类号： G03F7/16 , G03F7/09
CPC分类号： G03F7/16 , G03F7/0397 , G03F7/0751 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/20 , G03F7/30 , G03F7/325
摘要： A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

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