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1. 发明申请

US20170322492A1 RESIST PATTERN-FORMING METHOD 审中-公开
公开(公告)号：US20170322492A1
公开(公告)日：2017-11-09
申请号：US15440299
申请日：2017-02-23
申请人： JSR Corporation
发明人： Yusuke ANNO , Takashi Mori , Hirokazu Sakakibara , Taiichi Furukawa , Kazunori Takanashi , Hiromitsu Tanaka , Shin-ya Minegishi
IPC分类号： G03F7/16 , G03F7/30 , G03F7/20 , G03F7/09 , G03F7/075 , G03F7/32 , G03F7/039
CPC分类号： G03F7/16 , G03F7/0397 , G03F7/0751 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/20 , G03F7/30 , G03F7/325
摘要： A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (al) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

2. 发明授权

US09417522B2 Photosensitive resin composition and method for producing resist pattern 有权
标题翻译：光敏树脂组合物和抗蚀剂图案的制造方法
公开(公告)号：US09417522B2
公开(公告)日：2016-08-16
申请号：US14580902
申请日：2014-12-23
申请人： JSR Corporation
发明人： Hisanori Akimaru , Hirokazu Sakakibara , Hidefumi Ishikawa , Shingo Naruse
IPC分类号： G03F7/031 , G03F7/027 , G03F7/038 , G03F7/30
CPC分类号： G03F7/031 , G03F7/027 , G03F7/0388 , G03F7/30
摘要： The present invention provides a photosensitive resin composition comprising: an alkali-soluble resin (A); a compound having at least one ethylenically unsaturated double bond per molecule (B); a photo radical polymerization initiator having a keto oxime ester structure (C); and a compound represented by the Formula (1) or (2) below (D); wherein the content of the photo radical polymerization initiator (C) is 0.5 to 5 times the content of the compound (D), and the content of the photo radical polymerization initiator (C) with respect to 100 parts by mass of the compound (B) is 3 to 20 parts by mass. In Formula (1), the six R1s each independently represent a hydrogen atom or an electron-donating group, and n represents 0 or 1. In Formula (2), the six R2s each independently represent a hydrogen atom or an electron-donating group, and m represents 0 or 1. By use of the photosensitive resin composition of the present invention, formation of a resist pattern having excellent resolution is possible even without using an oxygen inhibition layer. By the method for producing a resist pattern of the present invention, formation of a resist pattern having excellent resolution is possible even without using an oxygen inhibition layer.
摘要翻译：本发明提供一种感光性树脂组合物，其含有：碱溶性树脂（A）每分子具有至少一个烯属不饱和双键的化合物（B）; 具有酮肟酯结构（C）的光自由基聚合引发剂; 和由下式（1）或（2）表示的化合物（D）表示的化合物。其中光自由基聚合引发剂（C）的含量为化合物（D）的含量的0.5〜5倍，光自由基聚合引发剂（C）的含量相对于化合物（B）100质量份）为3〜20质量份。在式（1）中，六个R 1各自独立地表示氢原子或给电子基团，n表示0或1.在式（2）中，六个R 2各自独立地表示氢原子或给电子基团 m表示0或1.通过使用本发明的感光性树脂组合物，即使不使用氧抑制层，也可以形成具有优异的分辨率的抗蚀剂图案。通过本发明的抗蚀剂图案的制造方法，即使不使用氧抑制层，也可以形成具有优异的分辨率的抗蚀剂图案。

3. 发明授权

US09298090B2 Pattern-forming method, and radiation-sensitive composition 有权
公开(公告)号：US09298090B2
公开(公告)日：2016-03-29
申请号：US14640882
申请日：2015-03-06
申请人： JSR CORPORATION
发明人： Hirokazu Sakakibara , Masafumi Hori , Taiichi Furukawa , Koji Ito
IPC分类号： G03F7/004 , G03F7/30 , G03F7/038 , C07C381/12 , C08F220/24 , C08F220/10 , G03F7/027 , G03F7/039 , G03F7/11 , G03F7/20 , G03F7/32
摘要： A pattern-forming method includes providing a resist film on a substrate using a radiation-sensitive composition. The resist film is exposed. The exposed resist film is developed using a developer solution. The developer solution includes no less than 80% by mass of an organic solvent. The radiation-sensitive composition includes at least two components including a first polymer and a radiation-sensitive acid generator. The first polymer includes a structural unit having an acid-labile group. One or more components of the radiation-sensitive composition have a group represented by a formula (1). A− represents —N−—SO2—RD, —COO−, —O− or —SO3−. —SO3− does not directly bond to a carbon atom having a fluorine atom. RD represents a linear or branched monovalent hydrocarbon group, or the like. X+ represents an onium cation. -A− X+ (1)

4. 发明授权

US09122163B2 Pattern-forming method, and radiation-sensitive resin composition 有权
公开(公告)号：US09122163B2
公开(公告)日：2015-09-01
申请号：US13855749
申请日：2013-04-03
申请人： JSR CORPORATION
发明人： Hirokazu Sakakibara , Masafumi Hori , Koji Ito , Reiko Kimura , Taiichi Furukawa
IPC分类号： G03F7/004 , G03F7/20 , C08F20/28 , G03F7/039 , G03F7/11 , G03F7/32 , C08F220/28
摘要： A pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed. A developer solution used in developing the exposed resist film includes no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a first polymer and a radiation-sensitive acid generator. The first polymer includes a first structural unit having an acid-labile group and an alicyclic group. The alicyclic group is capable of avoiding dissociation from a molecular chain by an action of an acid.

5. 发明授权

US09034559B2 Pattern-forming method, and radiation-sensitive composition 有权
标题翻译：图案形成方法和辐射敏感组合物
公开(公告)号：US09034559B2
公开(公告)日：2015-05-19
申请号：US13866093
申请日：2013-04-19
申请人： JSR CORPORATION
发明人： Hirokazu Sakakibara , Masafumi Hori , Taiichi Furukawa , Koji Ito
IPC分类号： G03F7/004 , G03F7/027 , C08F12/30 , C08F220/10 , G03F7/039 , G03F7/11 , G03F7/20 , G03F7/32
CPC分类号： G03F7/038 , C07C381/12 , C08F220/10 , C08F220/24 , G03F7/0045 , G03F7/0046 , G03F7/027 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/30 , G03F7/325 , Y10S430/114 , Y10S430/115
摘要： A pattern-forming method includes providing a resist film on a substrate using a radiation-sensitive composition. The resist film is exposed. The exposed resist film is developed using a developer solution. The developer solution includes no less than 80% by mass of an organic solvent. The radiation-sensitive composition includes at least two components including a first polymer and a radiation-sensitive acid generator. The first polymer includes a structural unit having an acid-labile group. One or more components of the radiation-sensitive composition have a group represented by a formula (1). A− represents —N−—SO2—RD, —COO−, —O− or —SO3−. —SO3− does not directly bond to a carbon atom having a fluorine atom. RD represents a linear or branched monovalent hydrocarbon group, or the like. X+ represents an onium cation. —A−X+ (1)
摘要翻译：图案形成方法包括使用辐射敏感组合物在衬底上提供抗蚀剂膜。抗蚀剂膜被曝光。使用显影剂溶液显影曝光的抗蚀剂膜。显影剂溶液含有不少于80质量％的有机溶剂。辐射敏感组合物包括至少两种组分，包括第一聚合物和辐射敏感性酸产生剂。第一聚合物包括具有酸不稳定基团的结构单元。辐射敏感组合物的一种或多种组分具有由式（1）表示的基团。 A-表示-N-SO 2 -R D，-COO-，-O-或-SO 3 - 。 -SO 3 - 不直接键合到具有氟原子的碳原子。 RD表示直链或支链一价烃基等。 X +表示鎓阳离子。 -A-X +（1）

6. 发明授权

US08980539B2 Developer 有权
标题翻译：开发者
公开(公告)号：US08980539B2
公开(公告)日：2015-03-17
申请号：US14190594
申请日：2014-02-26
申请人： JSR Corporation
发明人： Taiichi Furukawa , Hirokazu Sakakibara
IPC分类号： G03F7/32 , G03F7/004 , G03F7/039 , G03F7/20
CPC分类号： G03F7/325 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/327
摘要： A developer includes an organic solvent and a nitrogen-containing compound. The developer is configured to develop a resist film to form a negative resist pattern. The resist film is formed using a photoresist composition. The photoresist composition includes a polymer and a radiation-sensitive acid generator. The polymer includes a structural unit including an acid-labile group.
摘要翻译：显影剂包括有机溶剂和含氮化合物。显影剂被配置为显影抗蚀剂膜以形成负的抗蚀剂图案。使用光致抗蚀剂组合物形成抗蚀剂膜。光致抗蚀剂组合物包括聚合物和辐射敏感的酸发生剂。聚合物包括包含酸不稳定基团的结构单元。

7. 发明授权

US08815493B2 Resist pattern-forming method, and radiation-sensitive resin composition 有权
标题翻译：抗蚀剂图案形成方法和辐射敏感树脂组合物
公开(公告)号：US08815493B2
公开(公告)日：2014-08-26
申请号：US13866087
申请日：2013-04-19
申请人： JSR Corporation
发明人： Koji Ito , Hirokazu Sakakibara , Masafumi Hori , Taiichi Furukawa
IPC分类号： G03F7/004 , G03F7/20 , G03F7/40 , G03F7/039 , G03F7/32
CPC分类号： G03F7/004 , G03F7/0046 , G03F7/0048 , G03F7/0397 , G03F7/20 , G03F7/2041 , G03F7/325
摘要： A resist pattern-forming method includes coating a radiation-sensitive resin composition on a substrate to provide a resist film. The resist film is exposed. The exposed resist film is developed with a developer solution including no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a base polymer, a fluorine-atom-containing polymer, a radiation-sensitive acid generator, a solvent, and a compound. The base polymer has an acid-labile group. The fluorine-atom-containing polymer has a content of fluorine atoms higher than a content of fluorine atoms of the base polymer. The compound has a relative permittivity greater than a relative permittivity of the solvent by at least 15. A content of the compound is no less than 10 parts by mass and no greater than 200 parts by mass with respect to 100 parts by mass of the base polymer.
摘要翻译：抗蚀剂图案形成方法包括在基板上涂布辐射敏感性树脂组合物以提供抗蚀剂膜。抗蚀剂膜被曝光。曝光的抗蚀剂膜用包含不少于80质量％的有机溶剂的显影剂溶液显影。辐射敏感性树脂组合物包括基础聚合物，含氟原子的聚合物，辐射敏感性酸产生剂，溶剂和化合物。基础聚合物具有酸不稳定基团。含氟原子的聚合物的氟原子含量高于基础聚合物的氟原子含量。化合物的相对介电常数大于溶剂的相对介电常数至少为15.相对于100质量份的碱，该化合物的含量为10质量份以上且200质量份以下聚合物。

8. 发明申请

US20190391489A1 METHOD FOR PRODUCING PLATED SHAPED STRUCTURE AND PHOTOSENSITIVE RESIN COMPOSITION FOR PRODUCTION OF PLATED SHAPED STRUCTURES 审中-公开
公开(公告)号：US20190391489A1
公开(公告)日：2019-12-26
申请号：US16560020
申请日：2019-09-04
申请人： JSR Corporation
发明人： Hirokazu Sakakibara , Hirokazu Itou , Tomoyuki Matsumoto , Kazuto Watanabe
IPC分类号： G03F7/004 , G03F7/027 , G03F7/09 , G03F7/20
摘要： A method for producing a plated shaped structure, includes applying a photosensitive resin composition on a substrate to form a photosensitive resin coating film. The photosensitive resin composition includes: (A) a resin whose solubility in alkali is capable of being increased by an action of an acid; (B) a photoacid generator; and (C) a compound which is capable of being decomposed by an action of an acid to form a primary or secondary amine. The photosensitive resin coating film is exposed to light. The photosensitive resin coating film is developed after the exposing to light to form a resist pattern. A plating process is performed using the resist pattern as a mask.

9. 发明授权

US09335630B2 Pattern-forming method, and radiation-sensitive composition 有权
标题翻译：图案形成方法和辐射敏感组合物
公开(公告)号：US09335630B2
公开(公告)日：2016-05-10
申请号：US14640882
申请日：2015-03-06
申请人： JSR CORPORATION
发明人： Hirokazu Sakakibara , Masafumi Hori , Taiichi Furukawa , Koji Ito
IPC分类号： G03F7/004 , G03F7/30 , G03F7/038 , C07C381/12 , C08F220/24 , C08F220/10 , G03F7/027 , G03F7/039 , G03F7/11 , G03F7/20 , G03F7/32
CPC分类号： G03F7/038 , C07C381/12 , C08F220/10 , C08F220/24 , G03F7/0045 , G03F7/0046 , G03F7/027 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/30 , G03F7/325 , Y10S430/114 , Y10S430/115
摘要： A pattern-forming method includes providing a resist film on a substrate using a radiation-sensitive composition. The resist film is exposed. The exposed resist film is developed using a developer solution. The developer solution includes no less than 80% by mass of an organic solvent. The radiation-sensitive composition includes at least two components including a first polymer and a radiation-sensitive acid generator. The first polymer includes a structural unit having an acid-labile group. One or more components of the radiation-sensitive composition have a group represented by a formula (1). A− represents —N−—SO2—RD, —COO−, —O− or —SO3−. —SO3− does not directly bond to a carbon atom having a fluorine atom. RD represents a linear or branched monovalent hydrocarbon group, or the like. X+ represents an onium cation. -A− X+ (1)
摘要翻译：图案形成方法包括使用辐射敏感组合物在衬底上提供抗蚀剂膜。抗蚀剂膜被曝光。使用显影剂溶液显影曝光的抗蚀剂膜。显影剂溶液含有不少于80质量％的有机溶剂。辐射敏感组合物包括至少两种组分，包括第一聚合物和辐射敏感性酸产生剂。第一聚合物包括具有酸不稳定基团的结构单元。辐射敏感组合物的一种或多种组分具有由式（1）表示的基团。 A-表示-N-SO 2 -R D，-COO-，-O-或-SO 3 - 。 -SO 3 - 不直接键合到具有氟原子的碳原子。 RD表示直链或支链一价烃基等。 X +表示鎓阳离子。 -A- X +（1）

10. 发明授权

US09223207B2 Resist pattern-forming method, and radiation-sensitive resin composition 有权
标题翻译：抗蚀剂图案形成方法和辐射敏感树脂组合物
公开(公告)号：US09223207B2
公开(公告)日：2015-12-29
申请号：US13940119
申请日：2013-07-11
申请人： JSR CORPORATION
发明人： Hirokazu Sakakibara , Taiichi Furukawa , Masafumi Hori , Koji Ito , Hiromu Miyata
IPC分类号： G03F7/004 , G03F7/38 , G03F7/20 , G03F7/039 , G03F7/32
CPC分类号： G03F7/0041 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/20 , G03F7/2041 , G03F7/325 , G03F7/38
摘要： A resist pattern-forming method includes forming a resist coating film using a radiation-sensitive resin composition. The resist coating film is exposed and developed using a developer solution containing no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer component including a polymer having an acid-labile group, and a radiation-sensitive acid generator. The polymer component includes, in an identical polymer or different polymers, a first structural unit having a first hydrocarbon group, and a second structural unit having a second hydrocarbon group. The first hydrocarbon group is an unsubstituted or substituted branched chain group, or the like. The second hydrocarbon group has an adamantane skeleton. A molar ratio of the second hydrocarbon group to the first hydrocarbon group is less than 1. A proportion of a structural unit having a hydroxyl group in the polymer component is less than 5 mol %.
摘要翻译：抗蚀剂图案形成方法包括使用辐射敏感性树脂组合物形成抗蚀剂涂膜。使用含有不少于80质量％的有机溶剂的显影剂溶液将抗蚀剂涂膜曝光和显影。辐射敏感性树脂组合物包括含有酸不稳定基团的聚合物和辐射敏感性酸产生剂的聚合物组分。聚合物组分包括在相同聚合物或不同聚合物中的具有第一烃基的第一结构单元和具有第二烃基的第二结构单元。第一烃基是未取代或取代的支链基团等。第二个烃基具有金刚烷骨架。第二烃基与第一烃基的摩尔比小于1.聚合物组分中具有羟基的结构单元的比例小于5摩尔％。

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