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1. 发明申请

US20160320705A1 RESIST PATTERN-FORMING METHOD 审中-公开
公开(公告)号：US20160320705A1
公开(公告)日：2016-11-03
申请号：US15210643
申请日：2016-07-14
申请人： JSR Corporation
发明人： Yusuke ANNO , Takashi MORI , Hirokazu SAKAKIBARA , Taiichi FURUKAWA , Kazunori TAKANASHI , Hiromitsu TANAKA , Shin-ya MINEGISHI
IPC分类号： G03F7/16 , G03F7/09
CPC分类号： G03F7/16 , G03F7/0397 , G03F7/0751 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/20 , G03F7/30 , G03F7/325
摘要： A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

2. 发明申请

US20130337385A1 NEGATIVE PATTERN-FORMING METHOD AND PHOTORESIST COMPOSITION 审中-公开
标题翻译：负图案形成方法和光电组成
公开(公告)号：US20130337385A1
公开(公告)日：2013-12-19
申请号：US13972963
申请日：2013-08-22
申请人： JSR CORPORATION
发明人： Taiichi FURUKAWA , Koji ITO , Hiromu MIYATA , Hirokazu SAKAKIBARA
IPC分类号： G03F7/004
CPC分类号： G03F7/004 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/325
摘要： A negative pattern-forming method includes providing a resist film on a substrate using a photoresist composition. The photoresist composition includes a first polymer and an organic solvent. The first polymer includes a first structural unit having an acid-generating capability. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.
摘要翻译：负型图案形成方法包括使用光致抗蚀剂组合物在基板上提供抗蚀剂膜。光致抗蚀剂组合物包括第一聚合物和有机溶剂。第一聚合物包括具有产酸能力的第一结构单元。抗蚀剂膜被曝光。使用包含有机溶剂的显影剂显影曝光的抗蚀剂膜。

3. 发明申请

US20170153543A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, AND METHOD FOR PRODUCING METALLIC PATTERN 审中-公开
公开(公告)号：US20170153543A1
公开(公告)日：2017-06-01
申请号：US15361010
申请日：2016-11-24
申请人： JSR CORPORATION
发明人： Hisanori AKIMARU , Kenji OKAMOTO , Hirokazu SAKAKIBARA , Makoto KATSURAYAMA
IPC分类号： G03F7/031 , G03F7/40 , G03F7/20 , G03F7/32 , G03F7/038 , G03F7/16
CPC分类号： G03F7/031 , G03F7/027 , G03F7/033 , G03F7/30 , G03F7/322
摘要： The present invention provides a photosensitive resin composition including: an alkali-soluble resin (A) having more than 30% by mass and less than 70% by mass of a structural unit represented by the Formula (1) below; a compound (B) having at least one ethylenically unsaturated double bond per molecule; and a photo radical polymerization initiator (C) having an oxime ester structure; wherein a content of the photo radical polymerization initiator (C) with respect to 100 parts by mass of the alkali-soluble resin (A) is 3 to 20 parts by mass. In Formula (1), R1 represents a hydrogen atom or a C1-4 alkyl group. R2 represents a single bond or a divalent organic group. R3 each independently represent a hydrogen atom, a hydroxyl group, or an optionally substituted alkyl group.

4. 发明申请

US20150160556A1 RESIST PATTERN-FORMING METHOD 审中-公开
标题翻译：电阻形成方法
公开(公告)号：US20150160556A1
公开(公告)日：2015-06-11
申请号：US14627670
申请日：2015-02-20
申请人： JSR Corporation
发明人： Yusuke ANNO , Takashi MORI , Hirokazu SAKAKIBARA , Taiichi FURUKAWA , Kazunori TAKANASHI , Hiromitsu TANAKA , Shin-ya MINEGISHI
IPC分类号： G03F7/16 , G03F7/30
CPC分类号： G03F7/16 , G03F7/0397 , G03F7/0751 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/20 , G03F7/30 , G03F7/325
摘要： A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.
摘要翻译：抗蚀剂图案形成方法包括将抗蚀剂下层膜形成组合物施加到基底上以形成抗蚀剂下层膜。抗蚀剂下层膜形成组合物包含（A）聚硅氧烷。将抗辐射敏感树脂组合物施加到抗蚀剂下层膜上以形成抗蚀剂膜。辐射敏感性树脂组合物包含（a1）由于酸而导致极性变化和在有机溶剂中溶解度降低的聚合物。抗蚀剂膜被曝光。使用包含有机溶剂的显影剂显影曝光的抗蚀剂膜。

5. 发明申请

US20140134544A1 RESIST PATTERN-FORMING METHOD 审中-公开
标题翻译：电阻形成方法
公开(公告)号：US20140134544A1
公开(公告)日：2014-05-15
申请号：US14158160
申请日：2014-01-17
申请人： JSR Corporation
发明人： Yusuke ANNO , Takashi MORI , Hirokazu SAKAKIBARA , Taiichi FURUKAWA , Kazunori TAKANASHI , Hiromitsu TANAKA , Shin-ya MINEGISHI
IPC分类号： G03F7/20
CPC分类号： G03F7/16 , G03F7/0397 , G03F7/0751 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/20 , G03F7/30 , G03F7/325
摘要： A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.
摘要翻译：抗蚀剂图案形成方法包括将抗蚀剂下层膜形成组合物施加到基底上以形成抗蚀剂下层膜。抗蚀剂下层膜形成组合物包含（A）聚硅氧烷。将抗辐射敏感树脂组合物施加到抗蚀剂下层膜上以形成抗蚀剂膜。辐射敏感性树脂组合物包含（a1）由于酸而导致极性变化和在有机溶剂中溶解度降低的聚合物。抗蚀剂膜被曝光。使用包含有机溶剂的显影剂显影曝光的抗蚀剂膜。

6. 发明申请

US20130323653A1 RESIST PATTERN-FORMING METHOD 有权
标题翻译：电阻形成方法
公开(公告)号：US20130323653A1
公开(公告)日：2013-12-05
申请号：US13962919
申请日：2013-08-08
申请人： JSR CORPORATION
发明人： Hirokazu SAKAKIBARA , Hiromu MIYATA , Koji ITO , Taiichi FURUKAWA
IPC分类号： G03F7/20
CPC分类号： G03F7/20 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/325
摘要： A resist pattern-forming method includes applying a radiation-sensitive resin composition on a substrate to form a resist film. The radiation-sensitive resin composition includes an acid-labile group-containing polymer and a photoacid generator. The resist film is exposed. The resist film is developed using a developer including an organic solvent in an amount of no less than 80% by mass to a total amount of the developer. The radiation-sensitive resin composition has a contrast value γ of from 5.0 to 30.0. The contrast value γ is calculated from a resist dissolution contrast curve obtained by changing only a dose of a light used for exposing the resist film.
摘要翻译：抗蚀剂图案形成方法包括将辐射敏感性树脂组合物施加在基材上以形成抗蚀剂膜。辐射敏感性树脂组合物包含含酸不稳定基团的聚合物和光致酸产生剂。抗蚀剂膜被曝光。使用包含相对于显影剂总量不小于80质量％的量的有机溶剂的显影剂显影抗蚀剂膜。辐射敏感性树脂组合物的对比度值为5.0〜30.0。通过仅改变曝光抗蚀剂膜的光的剂量获得的抗蚀剂溶出对比度曲线来计算对比度值γ。

7. 发明申请

US20210325783A1 PHOTOSENSITIVE RESIN COMPOSITION, METHOD FOR FORMING RESIST PATTERN, METHOD FOR MANUFACTURING PLATED MOLDED ARTICLE, AND SEMICONDUCTOR APPARATUS 有权
公开(公告)号：US20210325783A1
公开(公告)日：2021-10-21
申请号：US17269021
申请日：2019-06-14
申请人： JSR CORPORATION
发明人： Hirokazu SAKAKIBARA , Naoki NISHIGUCHI , Takuhiro TANIGUCHI , Tomoyuki MATSUMOTO
IPC分类号： G03F7/038 , G03F7/004 , G03F7/20 , G03F7/40 , G03F7/32 , C25D5/02 , C25D7/12 , C25D3/12 , C25D3/38 , C08F220/28 , C08F220/18
摘要： The present photosensitive resin composition includes a polymer (A) having a structural unit (a1) represented by a formula (a1), a structural unit (a2) represented by a formula (a2), and a structural unit (a3) represented by a formula (a3), and a photoacid generator (B). In the formulae (a1) to (a3), R12, R22, and R32 each independently represent an organic group having 1 to 10 carbon atoms; R21 represents a substituted or non-substituted alkyl group having 1 to 10 carbon atoms; R31 represents a hydrogen atom, a substituted or non-substituted alkyl group having 1 to 10 carbon atoms, or a halogen atom; R13 and R23 each independently represent an acid dissociable group; R33 represents a hydroxyaryl group; and l, m and n independently represent an integer from 0 to 10.

8. 发明申请

US20160097978A1 RESIST PATTERN-FORMING METHOD 审中-公开
公开(公告)号：US20160097978A1
公开(公告)日：2016-04-07
申请号：US14877357
申请日：2015-10-07
申请人： JSR Corporation
发明人： Yusuke ANNO , Takashi MORI , Hirokazu SAKAKIBARA , Taiichi FURUKAWA , Kazunori TAKANASHI , Hiromitsu TANAKA , Shin-ya MINEGISHI
IPC分类号： G03F7/32 , G03F7/20
CPC分类号： G03F7/16 , G03F7/0397 , G03F7/0751 , G03F7/0752 , G03F7/091 , G03F7/094 , G03F7/20 , G03F7/30 , G03F7/325
摘要： A resist pattern-forming method includes applying a resist underlayer film-forming composition to a substrate to form a resist underlayer film. The resist underlayer film-forming composition includes (A) a polysiloxane. A radiation-sensitive resin composition is applied to the resist underlayer film to form a resist film. The radiation-sensitive resin composition includes (a1) a polymer that changes in polarity and decreases in solubility in an organic solvent due to an acid. The resist film is exposed. The exposed resist film is developed using a developer that includes an organic solvent.

9. 发明申请

US20150177616A1 PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE COMPOSITION 审中-公开
标题翻译：图案形成方法和辐射敏感性组合物
公开(公告)号：US20150177616A1
公开(公告)日：2015-06-25
申请号：US14640882
申请日：2015-03-06
申请人： JSR CORPORATION
发明人： Hirokazu SAKAKIBARA , Masafumi HORI , Taiichi FURUKAWA , Koji ITO
IPC分类号： G03F7/038 , G03F7/30
CPC分类号： G03F7/038 , C07C381/12 , C08F220/10 , C08F220/24 , G03F7/0045 , G03F7/0046 , G03F7/027 , G03F7/0397 , G03F7/11 , G03F7/2041 , G03F7/30 , G03F7/325 , Y10S430/114 , Y10S430/115
摘要： A pattern-forming method includes providing a resist film on a substrate using a radiation-sensitive composition. The resist film is exposed. The exposed resist film is developed using a developer solution. The developer solution includes no less than 80% by mass of an organic solvent. The radiation-sensitive composition includes at least two components including a first polymer and a radiation-sensitive acid generator. The first polymer includes a structural unit having an acid-labile group. One or more components of the radiation-sensitive composition have a group represented by a formula (1). A− represents —N−—SO2—RD, —COO−, —O− or —SO3−. —SO3− does not directly bond to a carbon atom having a fluorine atom. RD represents a linear or branched monovalent hydrocarbon group, or the like. X+ represents an onium cation. -A−X+ (1)
摘要翻译：图案形成方法包括使用辐射敏感组合物在衬底上提供抗蚀剂膜。抗蚀剂膜被曝光。使用显影剂溶液显影曝光的抗蚀剂膜。显影剂溶液含有不少于80质量％的有机溶剂。辐射敏感组合物包括至少两种组分，包括第一聚合物和辐射敏感性酸产生剂。第一聚合物包括具有酸不稳定基团的结构单元。辐射敏感组合物的一种或多种组分具有由式（1）表示的基团。 A-表示-N-SO 2 -R D，-COO-，-O-或-SO 3 - 。 -SO 3 - 不直接键合到具有氟原子的碳原子。 RD表示直链或支链一价烃基等。 X +表示鎓阳离子。 -A-X +（1）

10. 发明申请

US20130295506A1 RESIST PATTERN-FORMING METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION 有权
标题翻译：电阻图案形成方法和辐射敏感性树脂组合物
公开(公告)号：US20130295506A1
公开(公告)日：2013-11-07
申请号：US13940119
申请日：2013-07-11
申请人： JSR CORPORATION
发明人： Hirokazu SAKAKIBARA , Taiichi FURUKAWA , Masafumi HORI , Koji ITO , Hiromu MIYATA
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0041 , G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/20 , G03F7/2041 , G03F7/325 , G03F7/38
摘要： A resist pattern-forming method includes forming a resist coating film using a radiation-sensitive resin composition. The resist coating film is exposed and developed using a developer solution containing no less than 80% by mass of an organic solvent. The radiation-sensitive resin composition includes a polymer component including a polymer having an acid-labile group, and a radiation-sensitive acid generator. The polymer component includes, in an identical polymer or different polymers, a first structural unit having a first hydrocarbon group, and a second structural unit having a second hydrocarbon group. The first hydrocarbon group is an unsubstituted or substituted branched chain group, or the is like. The second hydrocarbon group has an adamantane skeleton. A molar ratio of the second hydrocarbon group to the first hydrocarbon group is less than 1. A proportion of a structural unit having a hydroxyl group in the polymer component is less than 5 mol %.
摘要翻译：抗蚀剂图案形成方法包括使用辐射敏感性树脂组合物形成抗蚀剂涂膜。使用含有不少于80质量％的有机溶剂的显影剂溶液将抗蚀剂涂膜曝光和显影。辐射敏感性树脂组合物包括含有酸不稳定基团的聚合物和辐射敏感性酸产生剂的聚合物组分。聚合物组分包括在相同聚合物或不同聚合物中的具有第一烃基的第一结构单元和具有第二烃基的第二结构单元。第一个烃基是未取代或取代的支链基团，或类似的。第二个烃基具有金刚烷骨架。第二烃基与第一烃基的摩尔比小于1.聚合物组分中具有羟基的结构单元的比例小于5摩尔％。

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