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1. 发明申请

US20070069235A1 Light-emitting element 审中-公开
标题翻译：发光元件
公开(公告)号：US20070069235A1
公开(公告)日：2007-03-29
申请号：US10572761
申请日：2004-10-21
申请人： Iwao Ueno , Junichi Kato , Seiji Nishiyama , Naoki Noda
发明人： Iwao Ueno , Junichi Kato , Seiji Nishiyama , Naoki Noda
IPC分类号： H01L31/111
CPC分类号： H01J11/00 , H01J31/127 , H01J63/06 , H01J2231/12
摘要： A light-emitting element (1) includes a light-emitting layer (2) including a phosphor, and at least two electrodes (6, 7). The light-emitting element (1) includes at least two kinds of electrically insulating layers (2, 9) with different dielectric constants. One of the electrically insulating layers (2, 9) is the light-emitting layer (2), and one of the two electrodes (6, 7) is formed in contact with one of the insulating layers. Therefore, it is possible to provide a light-emitting element that can emit light by using surface discharge, is manufactured at low cost, exhibits favorable luminous efficiency, and is to be driven with low power consumption when being applied to a large-screen display.
摘要翻译：发光元件（1）包括包括磷光体的发光层（2）和至少两个电极（6,7）。发光元件（1）包括具有不同介电常数的至少两种电绝缘层（2,9）。电绝缘层（2,9）中的一个是发光层（2），并且两个电极（6,7）之一形成为与一个绝缘层接触。因此，可以提供一种能够通过表面放电发光的发光元件，以低成本制造，显示出良好的发光效率，并且当被应用于大屏幕显示器时将以低功耗驱动。

2. 发明授权

US08896132B2 Electronic device and fabrication method thereof 有权
标题翻译：电子器件及其制造方法
公开(公告)号：US08896132B2
公开(公告)日：2014-11-25
申请号：US13703810
申请日：2010-06-21
申请人： Naoki Noda , Mitsuru Koarai , Toshio Yokouchi , Masahiro Ishimori
发明人： Naoki Noda , Mitsuru Koarai , Toshio Yokouchi , Masahiro Ishimori
IPC分类号： H01L23/52 , H01L21/30 , H01L23/538 , B81C1/00 , H01L21/02
CPC分类号： H01L23/5384 , B81B2207/012 , B81C1/00238 , B81C2203/035 , H01L21/02 , H01L2924/0002 , H01L2924/00
摘要： An electronic device 1 has a first semiconductor substrate 2 on which a bonding projection section 42 is projected via an insulation film 41, a second semiconductor substrate 3 that is bonded by welding the bonding projection section 42 of the first semiconductor substrate 2 via conductive bonding material, a through hole 54 that is formed to penetrate the bonding projection section 42 and the insulation film 41 in a bonding direction, and a conduction wiring section 44 that is formed by the conductive bonding material filled in the through hole 54 at a time of bonding by welding and conducts the first semiconductor substrate 2 with the second semiconductor substrate 3 to have same electric potential.
摘要翻译：电子设备1具有第一半导体基板2，第一半导体基板2经由绝缘膜41突出接合投影部42，第二半导体基板3通过经由导电接合材料焊接第一半导体基板2的接合突起部42而被接合形成为在接合方向上贯通接合突起部42和绝缘膜41的通孔54以及在接合时由填充在通孔54中的导电性接合材料形成的导电配线部44 通过焊接并将第一半导体衬底2与第二半导体衬底3导通以具有相同的电位。

3. 发明申请

US20120306032A1 METHOD OF BONDING SEMICONDUCTOR SUBSTRATE AND MEMS DEVICE 有权
标题翻译：结合半导体衬底和MEMS器件的方法
公开(公告)号：US20120306032A1
公开(公告)日：2012-12-06
申请号：US13513055
申请日：2009-12-11
申请人： Naoki Noda , Toshio Yokouchi , Masahiro Ishimori
发明人： Naoki Noda , Toshio Yokouchi , Masahiro Ishimori
IPC分类号： H01L21/50 , H01L29/82 , H01L31/028 , H01L21/762 , H01L29/84
CPC分类号： B81C1/00269 , B23K20/023 , B23K20/16 , B23K20/233 , B23K2101/40 , B81B2201/0235 , B81C2203/0118 , B81C2203/019 , B81C2203/035
摘要： Disclosed is a method for bonding semiconductor substrates, wherein an eutectic alloy does run off the bonding surfaces during the eutectic bonding. Also disclosed is an MEMS device which is obtained by bonding semiconductor substrates by this method. Specifically, a substrate (11) and a substrate (21) are eutectically bonded with each other by pressing and heating the substrate (11) and the substrate (21), while interposing an aluminum-containing layer (31) and a germanium layer (32) between a bonding part (30a) of the substrate (11) and a bonding part (30b) of the substrate (21) in such a manner that the aluminum-containing layer (31) and the germanium layer (32) overlap each other, with an outer edge (32a) of the germanium layer (32) being inwardly set back from the an outer edge (31a) of the aluminum-containing layer (31).
摘要翻译：公开了一种用于接合半导体衬底的方法，其中共晶合金在共晶键合期间从结合表面流出。还公开了通过该方法将半导体衬底接合而获得的MEMS器件。具体地，通过对基板（11）和基板（21）进行加压加热，同时将含铝层（31）和锗层（31）插入基板（11）和基板（21）中，（11）的接合部（30a）与基板（21）的接合部（30b）之间，使含铝层（31）和锗层（32）重叠在一起另一方面，锗层（32）的外边缘（32a）从含铝层（31）的外边缘（31a）向内设置。

4. 发明授权

US5750753A Method for manufacturing acryloxypropysilane 失效
标题翻译：丙烯酰氧基硅烷的制造方法
公开(公告)号：US5750753A
公开(公告)日：1998-05-12
申请号：US777595
申请日：1996-12-31
申请人： Yoichi Kimae , Shunji Yoshimatsu , Norio Itoda , Takashi Matsuo , Naoki Noda
发明人： Yoichi Kimae , Shunji Yoshimatsu , Norio Itoda , Takashi Matsuo , Naoki Noda
IPC分类号： B01J31/28 , B01J31/24 , C07B61/00 , C07F7/08 , C07F7/12 , C07F7/14 , C07F7/18
CPC分类号： C07F7/0829 , C07F7/14 , C07F7/1876
摘要： A method to manufacture acryloxypropylsilane to a high degree of purity is achieved by hydrosilation of (A) allyl acrylate or allyl methacrylate by (B) a hydrosilane compound, using (C) a platinum-containing compound as the catalyst and (D) an organic phosphorus compound as the promoter. The acryloxypropylsilane product is expressed by General Formula I CH.sub.2 .dbd.CR.sup.1 COOCH.sub.2 CH.sub.2 CH.sub.2 SiR.sup.2.sub.n R.sup.3.sub.3-n (Formula I) where R.sup.1 represents a hydrogen or methyl group, R.sup.2 represents a hydrolyzable group, R.sup.3 represents an aryl, alkenyl or aryl group of carbon number 1-12, and n is 0, 1, 2, or 3.
摘要翻译：（A）丙烯酸烯丙酯或甲基丙烯酸烯丙酯通过（B）氢化硅烷化合物的氢化硅烷化，使用（C）含铂化合物作为催化剂和（D）有机物（D）的氢化硅烷化合物来实现高纯度丙烯酰氧丙基硅烷的制备方法磷化合物作为促进剂。丙烯酰氧基丙基硅烷产物由通式I CH2 = CR1COOCH2CH2CH2SiR2nR33-n（式I）表示，其中R1表示氢或甲基，R2表示可水解基团，R3表示碳数为1-12的芳基，烯基或芳基， n为0,1,2或3。

5. 发明申请

US20130207277A1 ELECTRONIC DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：电子设备及其制造方法
公开(公告)号：US20130207277A1
公开(公告)日：2013-08-15
申请号：US13703810
申请日：2010-06-21
申请人： Naoki Noda , Mitsuru Koarai , Toshio Yokouchi , Masahiro Ishimori
发明人： Naoki Noda , Mitsuru Koarai , Toshio Yokouchi , Masahiro Ishimori
IPC分类号： H01L23/538 , H01L21/02
CPC分类号： H01L23/5384 , B81B2207/012 , B81C1/00238 , B81C2203/035 , H01L21/02 , H01L2924/0002 , H01L2924/00
摘要： An electronic device 1 has a first semiconductor substrate 2 on which a bonding projection section 42 is projected via an insulation film 41, a second semiconductor substrate 3 that is bonded by welding the bonding projection section 42 of the first semiconductor substrate 2 via conductive bonding material, a through hole 54 that is formed to penetrate the bonding projection section 42 and the insulation film 41 in a bonding direction, and a conduction wiring section 44 that is formed by the conductive bonding material filled in the through hole 54 at a time of bonding by welding and conducts the first semiconductor substrate 2 with the second semiconductor substrate 3 to have same electric potential.
摘要翻译：电子设备1具有第一半导体基板2，第一半导体基板2经由绝缘膜41突出接合投影部42，第二半导体基板3通过经由导电接合材料焊接第一半导体基板2的接合突起部42而被接合形成为在接合方向上贯通接合突起部42和绝缘膜41的通孔54以及在接合时由填充在通孔54中的导电性接合材料形成的导电配线部44 通过焊接并将第一半导体衬底2与第二半导体衬底3导通以具有相同的电位。

6. 发明申请

US20120299128A1 METHOD OF BONDING SEMICONDUCTOR SUBSTRATE AND MEMS DEVICE 审中-公开
标题翻译：结合半导体衬底和MEMS器件的方法
公开(公告)号：US20120299128A1
公开(公告)日：2012-11-29
申请号：US13513403
申请日：2009-12-11
申请人： Naoki Noda , Toshio Yokouchi , Masahiro Ishimori
发明人： Naoki Noda , Toshio Yokouchi , Masahiro Ishimori
IPC分类号： H01L21/02 , H01L29/84
CPC分类号： B23K20/023 , B23K20/16 , B23K20/233 , B23K2101/40 , B81C1/00269 , B81C2203/0118 , H01L24/29 , H01L24/32 , H01L24/83 , H01L24/94 , H01L2224/29117 , H01L2224/29124 , H01L2224/32145 , H01L2224/45032 , H01L2224/83203 , H01L2224/838 , H01L2224/83805 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01032 , H01L2924/01033 , H01L2924/01322 , H01L2924/10253 , H01L2924/14 , H01L2924/1461 , H01L2924/16235 , H01L2924/00
摘要： A method of bonding a semiconductor substrate in which a first semiconductor substrate is bonded with a second semiconductor substrate by eutectic bonding with pressurization and heating, an aluminum containing layer primarily made of aluminum and a germanium layer in a polymer state being interposed between a bonding surface of the first semiconductor substrate and a bonding surface of the second semiconductor substrate, the method including a step of: setting a weight ratio of the germanium layer to an aluminum containing layer to be eutectic alloyed is between 27 wt % to 52 wt %.
摘要翻译：一种通过在加压和加热下通过共晶接合将第一半导体衬底与第二半导体衬底接合的半导体衬底的方法，主要由铝制成的含铝层和聚合物状态的锗层被插入在接合表面所述第一半导体衬底和所述第二半导体衬底的接合表面的方法包括以下步骤：将所述锗层与所述共晶合金化的含铝层的重量比设定在27重量％至52重量％之间。

7. 发明授权

US08592285B2 Method of bonding semiconductor substrate and MEMS device 有权
标题翻译：半导体衬底和MEMS器件的接合方法
公开(公告)号：US08592285B2
公开(公告)日：2013-11-26
申请号：US13513055
申请日：2009-12-11
申请人： Naoki Noda , Toshio Yokouchi , Masahiro Ishimori
发明人： Naoki Noda , Toshio Yokouchi , Masahiro Ishimori
IPC分类号： H01L29/84
CPC分类号： B81C1/00269 , B23K20/023 , B23K20/16 , B23K20/233 , B23K2101/40 , B81B2201/0235 , B81C2203/0118 , B81C2203/019 , B81C2203/035
摘要： A method of bonding a semiconductor substrate has a step of pressurizing and heating to bond a substrate 11 with a substrate 12 by eutectic bonding in a state that an aluminum containing layer 31 and a germanium layer 32 between a bonding section 30a of the substrate 11 and a bonding section 30b of the substrate 21 are overlaid and an outer end 32a of the germanium layer 32 is receded inward with respect to an outer end 31a of the aluminum containing layer 31.
摘要翻译：接合半导体衬底的方法具有加压和加热的步骤，通过共晶接合将基板11与基板12接合，在基板11的接合部分30a和基板11的接合部分30a之间的含铝层32和锗层32的状态覆盖基板21的接合部30b，锗层32的外端32a相对于含铝层31的外端31a向内侧退缩。

8. 发明申请

US20120319220A1 METHOD OF BONDING SEMICONDUCTOR SUBSTRATE AND MEMS DEVICE 审中-公开
标题翻译：结合半导体衬底和MEMS器件的方法
公开(公告)号：US20120319220A1
公开(公告)日：2012-12-20
申请号：US13513069
申请日：2009-12-11
申请人： Naoki Noda , Toshio Yokouchi , Masahiro Ishimori
发明人： Naoki Noda , Toshio Yokouchi , Masahiro Ishimori
IPC分类号： H01L27/22 , H01L27/14 , H01L27/20 , H01L21/98
CPC分类号： B81C1/00269 , B23K20/023 , B23K20/16 , B23K20/233 , B23K2101/40 , B81B2201/0235 , B81C2203/0118 , B81C2203/019 , B81C2203/035 , H01L2224/83192
摘要： A method of bonding a semiconductor substrate having a substrate 11 formed with a MEMS sensor and a substrate 21 having a bonding portion 30b film-formed by contacting an aluminum containing layer 31 with a germanium layer 32 on either a front surface or a rear surface and formed with an integrated circuit that controls the MEMS sensor, either a front surface or a rear surface of the substrate 11 is put to contact directly on the bonding portion of the substrate 21 to bond by eutectic bonding with pressurization and heating.
摘要翻译：一种将具有由MEMS传感器形成的基板11的半导体基板和具有通过使含铝层31与前表面或后表面上的锗层32接触而成膜的基板21的半导体基板的接合方法，以及形成有控制MEMS传感器的集成电路，基板11的前表面或后表面直接接触在基板21的接合部分上，通过加压和加热的共晶接合来接合。

9. 发明授权

US07144736B2 Method and apparatus for continuous fractional analysis of metallic mercury and water-soluble mercury in a gas 有权
$Method and apparatus for continuous fractional analysis of metallic mercury and water-soluble mercury in a gas$
标题翻译：气体中金属汞和水溶性汞的连续分数分析方法和装置
公开(公告)号：US07144736B2
公开(公告)日：2006-12-05
申请号：US10363807
申请日：2001-06-25
申请人： Naoki Noda , Shigeo Ito , Koji Marumoto , Koji Tanida , Munehiro Hoshino
发明人： Naoki Noda , Shigeo Ito , Koji Marumoto , Koji Tanida , Munehiro Hoshino
IPC分类号： G01N33/20 , G01N21/33 , G01N21/01 , G01N1/22
CPC分类号： G01N33/0045 , G01N1/2214 , G01N1/2247 , G01N2001/2217 , G01N2001/227 , G01N2001/4066 , Y10T436/25375 , Y10T436/255 , Y10T436/25875
摘要： A method and an apparatus which continuously separate and measure mercury in an exhaust gas in accordance with each chemical conformation and display a measurement result in real time. According to the method and the apparatus, water-soluble mercury in a gas is absorbed into an absorption solution (7), the gas and the absorption solution (7) are then separated from each other, the water-soluble mercury in the absorption solution (7) is reduced to be converted into gaseous metal mercury and led to an analyzer (20), and metal mercury in the gas which is not absorbed into the absorption solution (7) is led to an analyzer (22) in the form of gas. As a result, the water-soluble mercury and the non-water-soluble mercury contained in the gas can be captured and measured/analyzed in respective measurement systems in accordance with each chemical conformation. In addition, a concentration of the metal mercury and that of the water-soluble mercury in the gas can be continuously monitored in real time. In this analysis, it is preferable to use the absorption solution (7) to absorb an acid gas which is an inhibitive component to mercury measurement, together with the water-soluble mercury.
摘要翻译：根据每个化学构型连续分离和测量废气中的汞并且实时显示测量结果的方法和装置。根据该方法和装置，气体中的水溶性汞被吸收到吸收溶液（7）中，然后将气体和吸收溶液（7）相互分离，吸收溶液中的水溶性汞（7）被还原成为气态金属汞并导致分析器（20），并且不吸收到吸收溶液（7）中的气体中的金属汞被引导到分析器（22）的形式加油站。结果，气体中所含的水溶性汞和非水溶性汞可以根据每种化学构型在相应的测量系统中被捕获和测量/分析。此外，可以实时地连续监测金属汞和气体中的水溶性汞的浓度。在该分析中，优选使用吸收溶液（7）与水溶性汞一起吸收作为汞测定的抑制成分的酸性气体。

10. 发明授权

US06750642B2 Power conserving regulator having intermittently connectable controller 失效
标题翻译：节能调节器具有可间歇连接的控制器
公开(公告)号：US06750642B2
公开(公告)日：2004-06-15
申请号：US10212056
申请日：2002-08-06
申请人： Masaki Murakata , Naoki Noda , Shinji Kuriki
发明人： Masaki Murakata , Naoki Noda , Shinji Kuriki
IPC分类号： H02J100
CPC分类号： H02M3/156 , H02M2001/0032 , H02M2001/0041 , Y02B70/16
摘要： In a DC—DC converter, a regulator circuit 14 acts to drive a switching element Q1 based on an error between a detected voltage obtained by a voltage divider circuit 11 and a reference voltage from a reference voltage generating circuit 12 and to output a step-up voltage by a coil L1 to an output terminal Vout. A timing generating circuit 16 acquires a driving interval of the switching element Q1 set by the regulator circuit 14 and then decides that, if the interval is long, a load is in a light load state. In this case, the timing generating circuit 16 controls to supply a driving power to an output voltage controller intermittently by driving switching unit S1, S2.
摘要翻译：在DC-DC转换器中，调节器电路14基于由分压电路11获得的检测电压与来自参考电压产生电路12的参考电压之间的误差来驱动开关元件Q1，线圈L1的上升电压到输出端子Vout。定时产生电路16获取由调节器电路14设置的开关元件Q1的驱动间隔，然后判定如果间隔较长，负载处于轻负载状态。在这种情况下，定时发生电路16控制通过驱动开关单元S1，S2间歇地向输出电压控制器提供驱动电力。

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