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    • 8. 发明授权
    • Semiconductor device having a circuit for protecting the device from
electrostatic discharge
    • 具有用于保护器件免受静电放电的电路的半导体器件
    • US5521415A
    • 1996-05-28
    • US361134
    • 1994-12-21
    • Yasuo Kondo
    • Yasuo Kondo
    • H01L27/04H01L21/822H01L27/02H01L23/62H02H9/00
    • H01L27/0251H01L2924/0002
    • A semiconductor device is disclosed which has an input terminal, an input protective device, a first stage circuit connected between the input terminal and an internal circuit, and a ground line system including a plurality of ground lines divided for noise suppression. Ground nodes of the protective circuit and the first stage circuit are connected with each other and to a common first ground line, while the ground nodes of the internal circuit are connected to second and third ground lines. The parasitic resistance formed between the ground nodes for the protective device and for the first stage circuit is reduced, thereby providing a surge voltage not higher than a clamp voltage of the protective device to protect the first stage circuit against electrostatic discharge-induced failure.
    • 公开了一种半导体器件,其具有输入端子,输入保护器件,连接在输入端子和内部电路之间的第一级电路,以及包括被划分用于噪声抑制的多个接地线的接地线系统。 保护电路和第一级电路的接地节点彼此连接并连接到公共第一接地线,而内部电路的接地节点连接到第二和第三接地线。 在保护装置和第一级电路的接地节点之间形成的寄生电阻减小,从而提供不高于保护装置的钳位电压的浪涌电压,以保护第一级电路免受静电放电引起的故障。