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1. 发明授权

US4392423A Printing hammer driving apparatus 失效
标题翻译：打印锤驱动装置
公开(公告)号：US4392423A
公开(公告)日：1983-07-12
申请号：US153318
申请日：1980-05-27
申请人： Isao Nakajima , Koji Tagusari , Kenji Okuna , Toru Hayama , Kazue Takahashi , Michihiro Watanabe , Sumihisa Kotani
发明人： Isao Nakajima , Koji Tagusari , Kenji Okuna , Toru Hayama , Kazue Takahashi , Michihiro Watanabe , Sumihisa Kotani
IPC分类号： B41J9/38 , B41J9/02
CPC分类号： B41J9/38
摘要： A printing hammer driving apparatus for high-speed printers comprises a lever member acting as a hammer operating part, an armature forming a part of a magnetic circuit, and an electromagnet forming, together with the armature, the magnetic circuit. The lever member has a rotational supporting point at the base end thereof and is made of a light-weight non-magnetic material. The armature is projected in one of the rotational directions of the lever member from the intermediate part of the lever member. The electromagnet has at least one core and an exciting coil wound on the core. A core has a magnetic pole face perpendicular to the direction of attraction of the armature and a magnetic pole face parallel to the direction of attraction of the armature. The magnetic pole face perpendicular to the direction of armature attraction is opposed with a gap to the forward end face of the armature, and the magnetic pole face parallel to the direction of armature attraction is opposed with a gap to the surface of the armatures parallel to the direction of attraction thereof.
摘要翻译：用于高速打印机的打印锤驱动装置包括作为锤操作部件的杠杆构件，形成磁路的一部分的电枢以及与衔铁一起形成磁路的电磁体。杠杆构件在其基端具有旋转支撑点，并且由轻质非磁性材料制成。电枢从杠杆构件的中间部分突出在杠杆构件的旋转方向之一上。电磁铁具有至少一个铁芯和缠绕在铁芯上的励磁线圈。芯具有垂直于电枢吸引方向的磁极面和平行于电枢吸引方向的磁极面。与电枢吸引方向垂直的磁极面与电枢的前端面相对，与电枢吸引方向平行的磁极面与与电枢平行的电枢的表面相对，吸引的方向。

2. 发明授权

US4511269A Cancel type printing head 失效
标题翻译：取消打印头
公开(公告)号：US4511269A
公开(公告)日：1985-04-16
申请号：US480788
申请日：1983-03-31
申请人： Kazue Takahashi , Kenzi Okuna , Isao Nakajima , Mineo Harada , Yutaka Kako
发明人： Kazue Takahashi , Kenzi Okuna , Isao Nakajima , Mineo Harada , Yutaka Kako
IPC分类号： B41J2/28 , B41J3/12
CPC分类号： B41J2/28
摘要： A printing head is disclosed in which each attraction member is driven by a magnetic attraction and an impact printing operation is carried out by a strain energy caused by a displacement of a spring member provided on the attraction member. The fulcrum of rotation of the attraction member is defined between the attraction member and a magnetic polar face of a yoke constituting a magnetic circuit together with the attraction member. Means for adjusting the resilient force of the spring member is engaged with a free end of the spring member.
摘要翻译：公开了一种打印头，其中每个吸引构件由磁吸引力驱动，并且冲击打印操作由通过设置在吸引构件上的弹簧构件的位移引起的应变能进行。吸引构件的旋转支点与吸引构件一起被限定在吸引构件和构成磁路的轭的磁极面之间。用于调节弹簧构件的弹力的装置与弹簧构件的自由端接合。

3. 发明授权

US07686917B2 Plasma processing system and apparatus and a sample processing method 有权
标题翻译：等离子体处理系统和设备及样品处理方法
公开(公告)号：US07686917B2
公开(公告)日：2010-03-30
申请号：US11780014
申请日：2007-07-19
申请人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
发明人： Toshio Masuda , Tatehito Usui , Mitsuru Suehiro , Hiroshi Kanekiyo , Hideyuki Yamamoto , Kazue Takahashi , Hiromichi Enami
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01L21/67069 , G01N21/68 , H01J37/32082 , H01J37/32935 , H01J37/32972
摘要： A plasma processing apparatus includes a vacuum vessel with a sample stage having a mounting surface disposed in a process chamber, and a plate having substantially uniform thickness and electric power applied thereto constituting a ceiling of the chamber. The plate is disposed opposite to and substantially parallel with the sample stage so as to cover the whole area of the stage mounting surface and has a through-hole therein. An optical transmitter with a diameter larger than a diameter of the though-hole is disposed inside of the vacuum vessel and has an end face at a position above and spaced a small distance a back surface of the plate so as to receive light from the chamber via the through-hole. The optical transmitter is independently detachable with respect to the back surface of the plate.
摘要翻译：等离子体处理装置包括具有设置在处理室中的安装表面的样品台的真空容器，以及构成室的天花板的基本均匀的厚度和电功率的板。该板与样品台相对设置并基本上平行，以覆盖舞台安装表面的整个区域并且在其中具有通孔。直径大于通孔直径的光发射器设置在真空容器的内部，并且具有位于板的后表面上方且间隔很小距离的位置处的端面，以便接收来自腔室的光通过通孔。光发射器相对于板的后表面独立地可拆卸。

4. 发明授权

US07491868B2 Mannose binding lectin knock-out mice and methods of use thereof 失效
标题翻译：甘露糖结合凝集素敲除小鼠及其使用方法
公开(公告)号：US07491868B2
公开(公告)日：2009-02-17
申请号：US11568295
申请日：2005-04-20
申请人： Kazue Takahashi , R. Alan Ezekowitz , Lei Shi
发明人： Kazue Takahashi , R. Alan Ezekowitz , Lei Shi
IPC分类号： A01K67/027 , A01K67/00 , A01K67/033 , C12N15/00
CPC分类号： A01K67/0276 , A01K2217/075 , A01K2227/105 , A01K2267/03 , C07K16/18 , C07K2317/77
摘要： A transgenic non-human animal with alterations in the MBL gene is prepared by introduction of a gene encoding an altered MBL protein into a host non-human animal. Methods for using transgenic mice so generated to screen for agents that effect MBL's cellular modulating activity are also provided.
摘要翻译：通过将编码改变的MBL蛋白质的基因导入宿主非人动物来制备具有MBL基因改变的转基因非人动物。还提供了使用如此产生的转基因小鼠筛选影响MBL细胞调节活性的试剂的方法。

5. 发明申请

US20090008363A1 Plasma processing apparatus and a plasma processing method 审中-公开
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20090008363A1
公开(公告)日：2009-01-08
申请号：US12230565
申请日：2008-09-02
申请人： Kazue Takahashi , Toshio Masuda , Tetsunori Kaji , Ken'etsu Yokogawa
发明人： Kazue Takahashi , Toshio Masuda , Tetsunori Kaji , Ken'etsu Yokogawa
IPC分类号： C23F1/02
CPC分类号： H01J37/32522 , H01J37/32192 , H01J37/32678 , H01L21/31116
摘要： In an oxide film etching process, a plasma having a suitable ratio of CF3, CF2, CF, and F is necessary, and there is a problem in that the etching characteristic fluctuates in accordance with a temperature fluctuation of the etching chamber. Using a UHF type ECR plasma etching apparatus having a low electron temperature, a suitable dissociation can be obtained, and by maintaining the temperature of a side wall of the etching chamber in a range from 10° C. and 120° C., a stable etching characteristic can be obtained. Since oxide film etching using a low electron temperature and a high density plasma can be obtained, an etching result having a superior characteristic can be obtained, and, also, since the side wall temperature adjustment range is low, a simplified apparatus structure and a heat resistant performance countermeasure can be obtained easily.
摘要翻译：在氧化膜蚀刻工艺中，需要具有CF 3，CF 2，CF和F的合适比例的等离子体，并且存在腐蚀特性根据蚀刻室的温度波动而波动的问题。使用具有低电子温度的UHF型ECR等离子体蚀刻装置，可以获得适当的解离，并且通过将蚀刻室的侧壁的温度保持在10℃和120℃的范围内，稳定的可以获得蚀刻特性。由于可以获得使用低电子温度和高密度等离子体的氧化膜蚀刻，因此可以获得具有优异特性的蚀刻结果，并且由于侧壁温度调节范围低，因此简化的装置结构和热可以容易地获得耐性性能对策。

6. 发明申请

US20060060300A1 Plasma treatment method 审中-公开
公开(公告)号：US20060060300A1
公开(公告)日：2006-03-23
申请号：US11274321
申请日：2005-11-16
申请人： Kazue Takahashi , Saburo Kanai , Yoshiaki Satou , Takazumi Ishizu
发明人： Kazue Takahashi , Saburo Kanai , Yoshiaki Satou , Takazumi Ishizu
IPC分类号： H01L21/306
CPC分类号： C23F4/00 , H01J37/3244 , H01J37/32834 , H01J2237/3322 , H01L21/32136 , H01L21/6875
摘要： A plasma treatment method of etching a substrate to be processed by using a gas plasma in a treatment chamber. The method includes exhausting reaction products obtained by etching and released into a vapor phase as a gas from the treatment chamber, wherein the reaction products on an outer periphery of the substrate are more efficiently exhausted and setting a deposition probability of the reaction products in a central part of a plane of the substrate to be low and setting a deposition probability of the reaction products in a peripheral part of a plane of the substrate to be high. The setting of the deposition probability is effected by setting a temperature in the central part of the substrate higher than a temperature in the peripheral part of the substrate.

7. 发明申请

US20060000800A1 Process monitoring methods in a plasma processing apparatus, monitoring units, and a sample processing method using the monitoring units 审中-公开
标题翻译：等离子体处理装置中的过程监视方法，监视单元以及使用监视单元的样本处理方法
公开(公告)号：US20060000800A1
公开(公告)日：2006-01-05
申请号：US11213770
申请日：2005-08-30
申请人： Tatehito Usui , Tetsuo Ono , Ryoji Nishio , Kazue Takahashi , Nobuyuki Mise
发明人： Tatehito Usui , Tetsuo Ono , Ryoji Nishio , Kazue Takahashi , Nobuyuki Mise
IPC分类号： G01L21/30 , C23F1/00
CPC分类号： H01L22/34 , C23C16/50 , C23C16/52 , G01N21/73 , H01J37/32935 , H01L21/67253 , H01L2924/0002 , H01L2924/00
摘要： A sample processing method for processing a sample by introducing a gas into a vacuum vessel and generating plasma in the vacuum vessel. The sample processing method includes the steps of measuring an intensity of light emitted from a light-emitting diode in the vacuum vessel, at the outside of the vacuum vessel, and monitoring a status of the plasma in accordance with the measured intensity of the light.
摘要翻译：一种用于通过将气体引入真空容器并在真空容器中产生等离子体来处理样品的样品处理方法。样品处理方法包括以下步骤：测量从真空容器中的发光二极管在真空容器的外部发射的光的强度，并根据所测量的光强度监测等离子体的状态。

8. 发明授权

US06867144B2 Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield 失效
标题翻译：用于等离子体处理高速半导体电路的装置和方法，其产量增加
公开(公告)号：US06867144B2
公开(公告)日：2005-03-15
申请号：US10138635
申请日：2002-05-06
申请人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
发明人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/302
CPC分类号： H01J37/32706
摘要： A plasma etching method of a wafer includes the steps of electrostatically attracting the wafer which has a gate oxide film onto a wafer mounting electrode in a vacuum processing chamber, introducing a mixed gas into the vacuum processing chamber on the basis of an etching recipe, generating a magnetic field inside the vacuum processing chamber, generating a plasma in the vacuum processing chamber, applying a bias power to the wafer to accelerate ions in the plasma toward the wafer, and setting an impedance of a portion of the wafer mounting electrode which corresponds to an outer periphery of the wafer as viewed from a bias power supply to a value which is greater than that of a center portion of the wafer mounting electrode using an electrode arranged within the wafer mounting electrode at a position corresponding to the outer periphery of the wafer and formed under an insulating film for electrostatically attracting the wafer.
摘要翻译：晶片的等离子体蚀刻方法包括以下步骤：将具有栅极氧化膜的晶片静电吸引到真空处理室中的晶片安装电极上，基于蚀刻配方将混合气体引入真空处理室，产生真空处理室内部的磁场，在真空处理室内产生等离子体，向晶片施加偏置功率，将等离子体中的离子加速朝向晶片，将晶片安装电极的一部分的阻抗设定为对应于从晶片安装电极的晶片安装电极的对应于晶片外周的位置的晶片安装电极的晶片安装电极的中心部分的角度看，晶片的外周是从偏压电源观察到的值并形成在用于静电吸引晶片的绝缘膜下。

9. 发明授权

US06235146B1 Vacuum treatment system and its stage 有权
标题翻译：真空处理系统及其阶段
公开(公告)号：US06235146B1
公开(公告)日：2001-05-22
申请号：US09313253
申请日：1999-05-18
申请人： Masanori Kadotani , Saburo Kanai , Youichi Itou , Takashi Fujii , Hironobu Kawahara , Ryouji Hamasaki , Kazue Takahashi , Motohiko Yoshigai
发明人： Masanori Kadotani , Saburo Kanai , Youichi Itou , Takashi Fujii , Hironobu Kawahara , Ryouji Hamasaki , Kazue Takahashi , Motohiko Yoshigai
IPC分类号： H01L2100
CPC分类号： H01L21/67023 , H01J2237/2001 , Y10S156/914
摘要： A stage with an electrostatic attracting means is adapted for use in a wafer treatment at a high temperature in a vacuum treatment system. In a vacuum treatment system having a stage provided in a treatment chamber, which electrostatically attracts an object to the stage in a low pressure atmosphere, and treats the object at high temperature by heating the stage, an electrode member of the stage is made of titanium or a titanium alloy and a dielectric film for electrostatic attraction is formed on the electrode member. In order to bond firmly titanium and alumina ceramics, it is desirable to sandwich a nickel alloy (Ni—Al) between the materials.
摘要翻译：具有静电吸引装置的阶段适用于在真空处理系统中在高温下进行晶片处理。在具有设置在处理室中的阶段的真空处理系统中，其在低压气氛中将物体静电吸引到工作台上，并且通过加热工作台在高温下处理物体，所述工作台的电极构件由钛制成或者在电极部件上形成钛合金和静电吸引用的电介质膜。为了牢固地结合钛和氧化铝陶瓷，期望在材料之间夹着镍合金（Ni-Al）。

10. 发明授权

US06217705B1 Method of holding substrate and substrate holding system 有权
标题翻译：保持基板和基板保持系统的方法
公开(公告)号：US06217705B1
公开(公告)日：2001-04-17
申请号：US09478992
申请日：2000-01-07
申请人： Naoyuki Tamura , Kazue Takahashi , Youichi Ito , Yoshitumi Ogawa , Hiroyuki Shichida , Tsunehiko Tsubone
发明人： Naoyuki Tamura , Kazue Takahashi , Youichi Ito , Yoshitumi Ogawa , Hiroyuki Shichida , Tsunehiko Tsubone
IPC分类号： H05H100
CPC分类号： H01L21/6835 , H01L21/67109 , H01L21/6831 , H01L21/6833 , H01L2924/3025 , Y10T279/23
摘要： A substrate holding system is provided for holding a substrate in a substrate etching apparatus by using electrostatic force. An electrical insulating member is also provided having a top surface approximately at the same level as the treated surface of the substrate and having an inner side surface in adjacent relationship with a surface of the substrate forming the periphery of the substrate. The inner side surface of the electrical insulating member faces the periphery of the substrate in substantially parallel relationship with a direction normal to the treated surface of the substrate. A dielectric film is formed on one surface of a metallic member having a flow passage for circulating a coolant to control the temperature of the substrate. An electrically insulating material member is placed on and in contact with a surface of the metallic member. An electrically conductive material member grounded to a standard electric potential is placed on and in contact with a surface of the electrically insulating material member. Three kinds of members are overlaid and fixed to each other in order of the metallic member having the dielectric film, the electrically insulating material member and the standard electric potential member. A coolant hole penetrates from the standard electric potential member side to the coolant flow passage of the metallic member being formed, at least three through holes penetrating the three kinds of members being formed and movable members linked to a substrate transporting mechanism being inserted in the through holes.
摘要翻译：提供了通过使用静电力将基板保持在基板蚀刻装置中的基板保持系统。还提供一种电绝缘构件，其具有与基板的处理表面大致相同水平面的顶表面，并且具有与形成基板周边的基板的表面相邻的内侧表面。电绝缘构件的内侧表面基本上与基板的被处理表面垂直的方向平行。在具有用于循环冷却剂的流路的金属构件的一个表面上形成电介质膜以控制衬底的温度。电绝缘材料构件放置在金属构件的表面上并与金属构件的表面接触。接地到标准电位的导电材料构件放置在电绝缘材料构件的表面上并与电绝缘材料构件的表面接触。按照具有电介质膜的金属构件，电绝缘材料构件和标准电位构件的顺序将三种构件重叠并固定。冷却剂孔从标准电位部件侧穿过形成的金属部件的冷却剂流路，至少形成贯通形成有三个部件的3个贯通孔，与基板传送机构连结的可动部件插入贯通孔孔。

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