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1. 发明授权

US06659111B1 Cleaning gas and method for cleaning vacuum treatment apparatus by flowing the cleaning gas 失效
标题翻译：清洁气体和通过使清洁气体流动来清洁真空处理装置的方法
公开(公告)号：US06659111B1
公开(公告)日：2003-12-09
申请号：US09480680
申请日：2000-01-11
申请人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi , Tadayuki Kawashima , Masahiko Matsudo , Tatsuo Hatano
发明人： Isamu Mouri , Tetsuya Tamura , Mitsuya Ohashi , Tadayuki Kawashima , Masahiko Matsudo , Tatsuo Hatano
IPC分类号： B08B900
CPC分类号： C23C16/4405 , C23F1/12 , H01L21/28556 , Y10S438/905
摘要： A cleaning gas includes HF gas whose concentration is greater than or equal to 1 vol % and oxygen containing gas whose concentration ranges from 0.5 to 99 vol %. The oxygen containing gas includes at least one of O2 gas, O3 gas, N2O gas, NO gas, CO gas and CO2 gas. The cleaning gas is employed to remove a deposited material generated in a vacuum treatment apparatus for producing a thin film of at least one of Ti, W, Ta, Ru, Ir, a compound thereof and an alloy thereof.
摘要翻译：清洁气体包括浓度大于或等于1体积％的HF气体和浓度范围为0.5至99体积％的含氧气体。含氧气体包括O 2气体，O 3气体，N 2 O气体，NO气体，CO气体和CO 2气体中的至少一种。采用清洁气体除去在真空处理装置中产生的沉积材料，用于制造Ti，W，Ta，Ru，Ir及其化合物及其合金中的至少一种的薄膜。

2. 发明申请

US20050223981A1 Processing device using shower head structure and processing method 失效
标题翻译：加工装置采用喷头结构及加工方法
公开(公告)号：US20050223981A1
公开(公告)日：2005-10-13
申请号：US10511440
申请日：2003-04-22
申请人： Akinobu Kakimoto , Kentaro Oshimo , Masahiko Matsudo
发明人： Akinobu Kakimoto , Kentaro Oshimo , Masahiko Matsudo
IPC分类号： H01L21/31 , C23C16/44 , C23C16/455 , H01L21/00 , H01L21/316 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45502 , H01L21/02183 , H01L21/02238 , H01L21/02255 , H01L21/02337 , H01L21/31662 , H01L21/31683 , H01L21/67017
摘要： A processing device, comprising a processing container, a shower head structure provided at the ceiling part of the processing container and having a plurality of gas jetting holes for jetting specified processing gas into the processing container formed in the gas jetting surface thereof facing the inside of the processing container, and a placing stand disposed in the processing container so as to face the shower head structure, wherein a head distance between the gas jetting surface and the placing stand and the blowing speed of gas from the gas jetting holes are set within the range surrounded by connecting, in a square shape with straight lines in a plane coordinate system having the head distance plotted on an abscissa and the gas jetting speed plotted on a coordinate, a point where the blowing speed of the gas from the gas jetting holes at the head distance of 15 mm is 32 m/sec, a point where the blowing speed of the gas from the gas jetting holes at the head distance of 15 mm is 67 m/sec, a point where the blowing speed of the gas from the gas jetting holes at the head distance of 77 mm is 40 m/sec, and a point where the blowing speed of the gas from the gas jetting holes at the head distance of 77 mm is 113 m/sec.
摘要翻译：一种处理装置，包括处理容器，设置在处理容器的顶部的喷淋头结构，并具有多个用于将特定处理气体喷射到形成在其面向其内部的气体喷射表面的处理容器中的气体喷射孔处理容器和设置在处理容器中以与喷淋头结构相对的放置台，其中，气体喷射表面和放置台之间的距离和来自气体喷射孔的气体的吹送速度设置在在平面坐标系中具有平直坐标系的方形围绕的距离，其横坐标上绘制了头部距离，并且绘制在坐标上的气体喷射速度，来自气体喷射孔的气体的吹送速度 15mm的头部距离为32m / sec，从头部距离为15mm i处的气体喷射孔的气体的吹送速度 s 67m / sec，从头部距离77mm处的气体喷射孔的气体的吹送速度为40m / sec的点，以及来自气体喷射孔的气体的吹出速度头距77毫米是113米/秒。

3. 发明授权

US5252892A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US5252892A
公开(公告)日：1993-10-12
申请号：US786009
申请日：1991-10-31
申请人： Akira Koshiishi , Kohei Kawamura , Masahiko Matsudo , Naoki Takayama
发明人： Akira Koshiishi , Kohei Kawamura , Masahiko Matsudo , Naoki Takayama
IPC分类号： H01J27/20 , H01J37/32 , H05H1/24 , H05H1/02
CPC分类号： H01J37/32495 , H01J27/20 , H01J37/3233 , H01J37/32559 , H05H1/24
摘要： A plasma processing apparatus includes a filament mounted in an electron generation chamber for producing plasma of a discharge gas, thereby generating electrons. The electrons are supplied from the electron generation chamber into an ion generation chamber through electron passage hole between both chambers to produce plasma of a processing gas inside the ion generation chamber. The chambers are formed of conductive ceramics to constitute electrodes.
摘要翻译：等离子体处理装置包括安装在用于产生放电气体的等离子体的电子发生室中的灯丝，从而产生电子。电子从电子发生室通过两个室之间的电子通过孔供给到离子发生室，以产生离子产生室内的处理气体的等离子体。这些室由导电陶瓷形成以构成电极。

4. 发明授权

US07615251B2 Processing device using shower head structure and processing method 失效
标题翻译：加工装置采用喷头结构及加工方法
公开(公告)号：US07615251B2
公开(公告)日：2009-11-10
申请号：US10511440
申请日：2003-04-22
申请人： Akinobu Kakimoto , Kentaro Oshimo , Masahiko Matsudo
发明人： Akinobu Kakimoto , Kentaro Oshimo , Masahiko Matsudo
IPC分类号： C23C16/00 , C23C16/06
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/45502 , H01L21/02183 , H01L21/02238 , H01L21/02255 , H01L21/02337 , H01L21/31662 , H01L21/31683 , H01L21/67017
摘要： A processing device, comprising a processing container, a shower head structure provided at the ceiling part of the processing container and having a plurality of gas jetting holes for jetting specified processing gas into the processing container formed in the gas jetting surface thereof facing the inside of the processing container, and a placing stand disposed in the processing container so as to face the shower head structure, wherein a head distance between the gas jetting surface and the placing stand and the blowing speed of gas from the gas jetting holes are set within the range surrounded by connecting, in a square shape with straight lines in a plane coordinate system having the head distance plotted on an abscissa and the gas jetting speed plotted on a coordinate, a point where the blowing speed of the gas from the gas jetting holes at the head distance of 15 mm is 32 m/sec, a point where the blowing speed of the gas from the gas jetting holes at the head distance of 15 mm is 67 m/sec, a point where the blowing speed of the gas from the gas jetting holes at the head distance of 77 mm is 40 m/sec, and a point where the blowing speed of the gas from the gas jetting holes at the head distance of 77 mm is 113 m/sec.
摘要翻译：一种处理装置，包括处理容器，设置在处理容器的顶部的喷淋头结构，并具有多个用于将特定处理气体喷射到形成在其面向其内部的气体喷射表面的处理容器中的气体喷射孔处理容器和设置在处理容器中以与喷淋头结构相对的放置台，其中，气体喷射表面和放置台之间的距离和来自气体喷射孔的气体的吹送速度设置在在平面坐标系中具有平直坐标系的方形围绕的距离，其横坐标上绘制了头部距离，并且绘制在坐标上的气体喷射速度，来自气体喷射孔的气体的吹送速度 15mm的头部距离为32m / sec，从头部距离为15mm i处的气体喷射孔的气体的吹送速度 s 67m / sec，从头部距离77mm处的气体喷射孔的气体的吹送速度为40m / sec的点，以及来自气体喷射孔的气体的吹出速度头距77毫米是113米/秒。

5. 发明授权

US5101110A Ion generator 失效
标题翻译：离子发生器
公开(公告)号：US5101110A
公开(公告)日：1992-03-31
申请号：US611046
申请日：1990-11-09
申请人： Masahiko Matsudo , Akira Koshiishi , Naoki Takayama , Kohei Kawamura
发明人： Masahiko Matsudo , Akira Koshiishi , Naoki Takayama , Kohei Kawamura
IPC分类号： H01J27/20 , H01J37/08
CPC分类号： H01J37/08 , H01J27/20 , H01J2237/30
摘要： An ion generator comprises an electron-generating chamber and an ion-generating chamber. Ions are generated by introducing a raw material gas into the ion-generating chamber and irradiating the raw material gas with electrodes generated in the electron-generating chamber. The ions, thus generated, are drawn by ion-collecting electrodes and guided out of the ion-generating chamber through a slit formed in the ion output section of the ion-generating chamber. That corner of the ion-generating chamber which faces the ion-collecting electrodes is curved, and that outer wall of the ion-generating chamber which faces the ion-collecting electrodes is specular. With this structure, an undesirable spark discharge does not easily take place with reference to the ion-collecting electrodes, so that damage to the structural components of the ion generator is suppressed. Further, the ion output section is removable from the main body of the ion-generating chamber. Therefore, only the ion output section can be replaced with a new one, if it is worn out.
摘要翻译：离子发生器包括电子发生室和离子产生室。通过将原料气体引入离子产生室并用在电子发生室中产生的电极照射原料气体而产生离子。这样产生的离子被离子收集电极拉出，并通过形成在离子产生室的离子输出部分中的狭缝引出离子产生室。面向离子收集电极的离子产生室的角是弯曲的，离子收集电极的面向离子收集电极的外壁是镜面的。利用这种结构，参考离子收集电极不容易发生不期望的火花放电，从而抑制对离子发生器的结构部件的损坏。此外，离子输出部分可从离子产生室的主体移除。因此，只有离子输出部分可以被更换新的离子输出部分。

6. 发明授权

US5532613A Probe needle 失效
标题翻译：探针
公开(公告)号：US5532613A
公开(公告)日：1996-07-02
申请号：US227638
申请日：1994-04-14
申请人： Yasushi Nagasawa , Satoru Yamashita , Masahiko Matsudo
发明人： Yasushi Nagasawa , Satoru Yamashita , Masahiko Matsudo
IPC分类号： G01R1/067 , G01R1/073 , G01R3/00
CPC分类号： G01R1/07357 , G01R1/06711 , G01R1/06761 , G01R1/06772 , G01R3/00 , G01R1/0675 , Y10T137/5762
摘要： The present invention relates to a probe needle wherein a conductive film is formed over a first insulating film formed around the outer periphery of a rod-like member through which a signal current flows, a second insulating film is formed over the outer periphery of the conductive film, and the conductive film is grounded. Since the rod-like member through which a signal current flows is thereby shielded, it is not affected by noise, and mutual crosstalk between signal currents is also prevented. Moreover, since ill effects caused by mutual contact with other probe needles is prevented by the second insulating film, reliable and stable measurement is possible. The coating of the probe needle is implemented by covering non-coating portions of the probe needle by a melted thermally liquefiable wax, hardening the thermally liquefiable wax covering the non-coating portions at room temperature, applying a coating to the probe needle by vacuum deposition, heating the thermally liquefiable wax once again, and then removing the thermally liquefiable wax from the probe needle. As a result, a probe needle is obtained wherein a non-coating portion is reliably delimited from a coating portion by a masking boundary. When the coating process is completed, the probe needle could be subjected to washing to completely remove any remaining wax.
摘要翻译：本发明涉及一种探针，其中导电膜形成在围绕信号电流流动的杆状构件的外周围形成的第一绝缘膜上，第二绝缘膜形成在导电的外周上膜，导电膜接地。由于信号电流流过的杆状构件被屏蔽，所以不受噪声的影响，并且也防止了信号电流之间的相互串扰。此外，由于通过第二绝缘膜防止与其他探针的相互接触引起的不良影响，因此可靠且稳定的测量是可能的。探针的涂层通过用熔融的可热化的液体蜡覆盖探针的未涂覆部分来实现，在室温下固化覆盖非涂覆部分的热可液化蜡，通过真空沉积将涂层施加到探针上再次加热可热化的蜡，然后从探针取出热可液化的蜡。结果，获得探针，其中非涂覆部分通过掩蔽边界与涂布部分可靠地界定。当涂布过程完成时，可以对探针进行洗涤以完全除去任何剩余的蜡。

7. 发明授权

US6057694A Testing method including the removal of insulative films for electrical contact and apparatus therefor 失效
标题翻译：包括去除用于电接触的绝缘膜的测试方法及其设备
公开(公告)号：US6057694A
公开(公告)日：2000-05-02
申请号：US977558
申请日：1997-11-25
申请人： Masahiko Matsudo
发明人： Masahiko Matsudo
IPC分类号： H01L21/66 , G01R31/28 , H01L21/302 , H01L21/304 , H01L21/3065 , G01R31/26
CPC分类号： G01R31/2886
摘要： This invention provides a method and apparatus for vapor-phase processing (e.g., plasma-processing) the object to be tested, thereby removing the insulating oxide films at least at portions on the electrodes with which measurement contactors come into contact, bringing the measurement contactors into contact with the portions on the electrodes from which the films have been removed, and testing the electrical characteristics of the object to be tested.
摘要翻译：本发明提供了一种用于气相处理（例如等离子体处理）被测物体的方法和装置，从而至少在电极上与测量接触器接触的部分去除绝缘氧化膜，使得测量接触器与去除了膜的电极上的部分接触，并测试待测试物体的电特性。

8. 发明授权

US5049784A Electron generating apparatus 失效
标题翻译：电子发生装置
公开(公告)号：US5049784A
公开(公告)日：1991-09-17
申请号：US527946
申请日：1990-05-24
申请人： Masahiko Matsudo
发明人： Masahiko Matsudo
IPC分类号： H01J27/08 , H01J27/20 , H01J37/077 , H01J37/08 , H01L21/265
CPC分类号： H01J27/08 , H01J37/077
摘要： An electron generating apparatus for an ion source for example, which is capable of prolonging service life and facilitating the exchange of its filament has been proposed. The electron generating apparatus includes an electron generating chamber having a discharging gas supply hole and electron extracting hole, a pair of conductive filament support members mounted in the chamber through an insulating plate, and a filament detachably fixed on the filament support members. At least one of the filament support members is provided with an overhang to cover at least part of a region between the lower ends of the filament.
摘要翻译：已经提出了例如能够延长使用寿命并促进其灯丝交换的用于离子源的电子发生装置。电子发生装置包括具有放电气体供给孔和电子提取孔的电子发生室，通过绝缘板安装在室中的一对导电细丝支撑构件和可拆卸地固定在灯丝支撑构件上的灯丝。长丝支撑构件中的至少一个设置有突出部，以覆盖长丝的下端之间的区域的至少一部分。

9. 发明授权

US5028791A Electron beam excitation ion source 失效
标题翻译：电子束激发离子源
公开(公告)号：US5028791A
公开(公告)日：1991-07-02
申请号：US486256
申请日：1990-02-28
申请人： Akira Koshiishi , Kohei Kawamura , Masahiko Matsudo , Naoki Takayama
发明人： Akira Koshiishi , Kohei Kawamura , Masahiko Matsudo , Naoki Takayama
IPC分类号： H01J27/08 , H01J27/20
CPC分类号： H01J27/08 , H01J27/20
摘要： An electron beam excitation ion source comprises a housing having an ion generation chamber therein. A discharge gas and an accelerated electrons are introduced into the ion generation chamber, causing the accelerated electrons to collide against the discharge gas to generate a plasma containing ions in the ion generation chamber. The housing includes an ion extraction port through which the ions are extracted from the ion generation chamber outside the housing and an electron reflecting member exposed in the ion generation chamber to reflect the electrons.
摘要翻译：电子束激发离子源包括其中具有离子产生室的壳体。放电气体和加速的电子被引入到离子产生室中，导致加速的电子与放电气体碰撞，以产生离子产生室中含有离子的等离子体。壳体包括离子提取端口，离子从壳体外部的离子产生室提取出来，而电子反射部件暴露在离子产生室中以反射电子。

10. 发明授权

US06821874B2 Method for depositing tungsten silicide film and method for preparing gate electrode/wiring 失效
标题翻译：沉积硅化钨膜的方法和制备栅电极/布线的方法
公开(公告)号：US06821874B2
公开(公告)日：2004-11-23
申请号：US09757583
申请日：2001-01-11
申请人： Masahiko Matsudo , Kenji Suzuki , Kazuya Okubo
发明人： Masahiko Matsudo , Kenji Suzuki , Kazuya Okubo
IPC分类号： H01L213205
CPC分类号： H01L29/4941 , H01L21/28061 , H01L21/32053 , H01L29/4933 , Y10S257/90
摘要： An electrode and/or wiring having a polycide structure is formed with voids V therein at the preparing stage as shown in FIG. 3. If the scale down and lowering of resistance of the electrode and/or wiring further proceed in future, the influence of the voids becomes obvious to lower yields. According to the present invention, a method for depositing a tungsten silicide film is characterized in that when a tungsten silicide layer is formed on a polysilicon layer, a phosphorus atom containing gas is added to a reactive gas at least in the initial stage that the tungsten silicide layer is formed, and the amount of the added phosphorus atom containing gas is set to be in the range of from 0.2 vol. % to 0.45 vol. %.
摘要翻译：具有多晶硅结构的电极和/或布线在制备阶段形成有空隙V，如图3所示。 3.如果将来进一步进行电极和/或布线的电阻降低和电阻降低，则空隙的影响变得明显，以降低产量。根据本发明，一种用于沉积硅化钨膜的方法的特征在于在多晶硅层上形成硅化钨层时，至少在形成硅化钨层的初始阶段向反应气体中添加含磷原子的气体，并且添加的含磷原子的气体的量被设定在0.2体积的范围内。％至0.45体积％。

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