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1. 发明授权

US09188177B2 Brake disc 有权
标题翻译：制动盘
公开(公告)号：US09188177B2
公开(公告)日：2015-11-17
申请号：US13985163
申请日：2012-02-16
申请人： Toru Fujii , Kazuya Okubo , Kiyotaka Obunai , Yoshihisa Kubota , Hideaki Okada , Tsuyoshi Nakatsuji
发明人： Toru Fujii , Kazuya Okubo , Kiyotaka Obunai , Yoshihisa Kubota , Hideaki Okada , Tsuyoshi Nakatsuji
IPC分类号： F16D65/00 , F16D65/12 , F16D65/02
CPC分类号： F16D65/0006 , F16D65/12 , F16D65/128 , F16D2065/132 , F16D2065/1328
摘要： A brake disc is provided capable of effectively reducing the generation of noise such as brake noise by making specifications relating to lightening holes different from each other between two brake disc plates. In the brake disc, two brake disc plates are laminated so as to slide on each other by vibration during braking, and specifications relating to one or more selected from lightening holes, plate thickness, diameter, and warpage are made different from each other between the brake disc plates. In addition, lightening holes are formed on at least one of the brake disc plates, and one or more specifications selected from the number of lightening holes, the shapes of the lightening holes, the sizes of the lightening holes, and the arrangement positions of the lightening holes are made different from each other between the brake disc plates.
摘要翻译：提供了一种制动盘，其能够通过在两个制动盘盘之间制造与彼此不同的减光孔的规格，从而有效地减少诸如制动噪声的噪声的产生。在制动盘中，通过在制动时的振动使两个制动盘片层压成彼此相互滑动，并且在从放电孔，板厚，直径和翘曲中选择的一个或多个的规格在制动盘片。另外，在至少一个制动盘片上形成有减光孔，从减光孔的数量，减亮孔的形状，发光孔的尺寸和排列位置的一个或多个规格制动盘板之间的减光孔彼此不同。

2. 发明授权

US08575704B2 Semiconductor device and manufacturing method of the semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08575704B2
公开(公告)日：2013-11-05
申请号：US13415482
申请日：2012-03-08
申请人： Masaki Haneda , Akiyoshi Hatada , Akira Katakami , Yuka Kase , Kazuya Okubo
发明人： Masaki Haneda , Akiyoshi Hatada , Akira Katakami , Yuka Kase , Kazuya Okubo
IPC分类号： H01L21/70 , H01L21/336
CPC分类号： H01L21/823481 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/0262 , H01L21/02636 , H01L21/28202 , H01L21/76229 , H01L21/823418 , H01L21/823425 , H01L29/0649 , H01L29/1083 , H01L29/518 , H01L29/665 , H01L29/6653 , H01L29/6659 , H01L29/66636 , H01L29/7833
摘要： A semiconductor device includes a semiconductor substrate, a device region including first and second parts, first and second gate electrodes formed in the first and the second parts, first and second source regions, first and second drain regions, first, second, third, and fourth embedded isolation film regions formed under the first source, the first drain, the second source, and the second drain regions, respectively. Further, the first drain region and the second source region form a single diffusion region, the second and the third embedded isolation film regions form a single embedded isolation film region, an opening is formed in a part of the single diffusion region so as to extend to the second and the third embedded isolation film regions, and the opening is filled with an isolation film.
摘要翻译：半导体器件包括半导体衬底，包括第一和第二部分的器件区域，形成在第一和第二部分中的第一和第二栅电极，第一和第二源极区域，第一和第二漏极区域，第一，第二，第三和第分别形成在第一源极，第一漏极，第二源极和第二漏极区域之下的第四嵌入式隔离膜区域。此外，第一漏极区域和第二源极区域形成单个扩散区域，第二和第三嵌入式隔离膜区域形成单个嵌入式隔离膜区域，在单个扩散区域的一部分中形成开口以延伸到第二和第三嵌入式隔离膜区域，并且开口填充有隔离膜。

3. 发明申请

US20120261760A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的半导体器件和制造方法
公开(公告)号：US20120261760A1
公开(公告)日：2012-10-18
申请号：US13415482
申请日：2012-03-08
申请人： Masaki Haneda , Akiyoshi Hatada , Akira Katakami , Yuka Kase , Kazuya Okubo
发明人： Masaki Haneda , Akiyoshi Hatada , Akira Katakami , Yuka Kase , Kazuya Okubo
IPC分类号： H01L27/088 , H01L21/336
CPC分类号： H01L21/823481 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/0262 , H01L21/02636 , H01L21/28202 , H01L21/76229 , H01L21/823418 , H01L21/823425 , H01L29/0649 , H01L29/1083 , H01L29/518 , H01L29/665 , H01L29/6653 , H01L29/6659 , H01L29/66636 , H01L29/7833
摘要： A semiconductor device includes a semiconductor substrate, a device region including first and second parts, first and second gate electrodes formed in the first and the second parts, first and second source regions, first and second drain regions, first, second, third, and fourth embedded isolation film regions formed under the first source, the first drain, the second source, and the second drain regions, respectively. Further, the first drain region and the second source region form a single diffusion region, the second and the third embedded isolation film regions form a single embedded isolation film region, an opening is formed in a part of the single diffusion region so as to extend to the second and the third embedded isolation film regions, and the opening is filled with an isolation film.
摘要翻译：半导体器件包括半导体衬底，包括第一和第二部分的器件区域，形成在第一和第二部分中的第一和第二栅电极，第一和第二源极区域，第一和第二漏极区域，第一，第二，第三和第分别形成在第一源极，第一漏极，第二源极和第二漏极区域之下的第四嵌入式隔离膜区域。此外，第一漏极区域和第二源极区域形成单个扩散区域，第二和第三嵌入式隔离膜区域形成单个嵌入式隔离膜区域，在单个扩散区域的一部分中形成开口以延伸到第二和第三嵌入式隔离膜区域，并且开口填充有隔离膜。

4. 发明申请

US20080284027A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20080284027A1
公开(公告)日：2008-11-20
申请号：US12110662
申请日：2008-04-28
申请人： Shinichi AKIYAMA , Kazuo KAWAMURA , Hisaya SAKAI , Hirofumi WATATANI , Kazuya OKUBO
发明人： Shinichi AKIYAMA , Kazuo KAWAMURA , Hisaya SAKAI , Hirofumi WATATANI , Kazuya OKUBO
IPC分类号： H01L23/48 , H01L21/4763
CPC分类号： H01L23/53238 , H01L21/2855 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L21/76865 , H01L21/76873 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening.
摘要翻译：制造半导体器件的方法在电介质膜中形成位于第一开口中的第一开口和第二开口，在整个表面上形成含有第一金属的第一金属膜，在底部蚀刻第一金属膜的第二开口，并且在整个表面上形成含有第二金属的第二金属膜，并且在第二开口和第一开口中埋入导电材料。

5. 发明申请

US20080134213A1 EVENT NOTIFICATIONS RELATING TO SYSTEM FAILURES IN SCALABLE SYSTEMS 有权
标题翻译：关于可扩展系统中的系统故障的事件通知
公开(公告)号：US20080134213A1
公开(公告)日：2008-06-05
申请号：US11857261
申请日：2007-09-18
申请人： Gail A. Alverson , Robert L. Alverson , Daniel C. Duval , Eric A. Hoffman , Laurence S. Kaplan , Matthew Kelly , Kazuya Okubo , Mark Swan , Asaph Zemach
发明人： Gail A. Alverson , Robert L. Alverson , Daniel C. Duval , Eric A. Hoffman , Laurence S. Kaplan , Matthew Kelly , Kazuya Okubo , Mark Swan , Asaph Zemach
IPC分类号： G06F13/00
CPC分类号： G06F11/0781 , G06F11/0709 , G06F11/3048 , G06F11/3072
摘要： An availability system is provided that includes a hierarchy of controllers for providing event notifications relating to availability of components of a scalable MPP system. A controller receives a subscription from a child controller that identifies an event type and a generator. The controller stores in a subscription store an indication that the subscription has been received from the child controller. When a parent controller has not yet been notified of a subscription with a matching event type and generator as indicated by the subscription store, the controller sends the subscription to the parent controller. When the parent controller has already been notified of a subscription with a matching event type and generator as indicated by the subscription store, the controller suppresses the sending of the subscription to the parent controller.
摘要翻译：提供了一种可用性系统，其包括用于提供与可伸缩MPP系统的组件的可用性相关的事件通知的控制器层级。控制器接收来自识别事件类型和发生器的子控制器的订阅。控制器在订阅存储器中存储已经从子控制器接收到订阅的指示。当父控制器尚未被通知订阅存储器所指示的匹配事件类型和生成器的订阅时，控制器将该订阅发送给父控制器。当父控制器已被通知具有由订阅存储所指示的匹配事件类型和生成器的订阅时，控制器禁止向父控制器发送订阅。

6. 发明授权

US06821874B2 Method for depositing tungsten silicide film and method for preparing gate electrode/wiring 失效
标题翻译：沉积硅化钨膜的方法和制备栅电极/布线的方法
公开(公告)号：US06821874B2
公开(公告)日：2004-11-23
申请号：US09757583
申请日：2001-01-11
申请人： Masahiko Matsudo , Kenji Suzuki , Kazuya Okubo
发明人： Masahiko Matsudo , Kenji Suzuki , Kazuya Okubo
IPC分类号： H01L213205
CPC分类号： H01L29/4941 , H01L21/28061 , H01L21/32053 , H01L29/4933 , Y10S257/90
摘要： An electrode and/or wiring having a polycide structure is formed with voids V therein at the preparing stage as shown in FIG. 3. If the scale down and lowering of resistance of the electrode and/or wiring further proceed in future, the influence of the voids becomes obvious to lower yields. According to the present invention, a method for depositing a tungsten silicide film is characterized in that when a tungsten silicide layer is formed on a polysilicon layer, a phosphorus atom containing gas is added to a reactive gas at least in the initial stage that the tungsten silicide layer is formed, and the amount of the added phosphorus atom containing gas is set to be in the range of from 0.2 vol. % to 0.45 vol. %.
摘要翻译：具有多晶硅结构的电极和/或布线在制备阶段形成有空隙V，如图3所示。 3.如果将来进一步进行电极和/或布线的电阻降低和电阻降低，则空隙的影响变得明显，以降低产量。根据本发明，一种用于沉积硅化钨膜的方法的特征在于在多晶硅层上形成硅化钨层时，至少在形成硅化钨层的初始阶段向反应气体中添加含磷原子的气体，并且添加的含磷原子的气体的量被设定在0.2体积的范围内。％至0.45体积％。

7. 发明授权

US08551832B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08551832B2
公开(公告)日：2013-10-08
申请号：US12819708
申请日：2010-06-21
申请人： Shinichi Akiyama , Kazuya Okubo , Nobuyuki Ohtsuka
发明人： Shinichi Akiyama , Kazuya Okubo , Nobuyuki Ohtsuka
IPC分类号： H01L21/8238
CPC分类号： H01L21/02109 , H01L21/02178 , H01L21/02181 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/02321 , H01L21/823857
摘要： A method for manufacturing a semiconductor device includes forming a first-conductivity-type well and a second-conductivity-type well in a silicon substrate; stacking a first high-dielectric-constant insulating film and a first cap dielectric film above the silicon substrate; removing at least the first cap dielectric film from above the second-conductivity-type well; conducting a first annealing at a first temperature to cause an element included in the first cap dielectric film to diffuse into the first high-dielectric-constant insulating film disposed above the first-conductivity-type well; after the first annealing, stacking a second high-dielectric-constant insulating film and a second cap dielectric film above the silicon substrate; removing the second cap dielectric film disposed above the first-conductivity-type well; and conducting a second annealing at a second temperature lower than the first temperature to cause an element included in the second cap dielectric film to diffuse into the second high-dielectric-constant insulating film disposed above the second-conductivity-type well.
摘要翻译：一种制造半导体器件的方法包括在硅衬底中形成第一导电型阱和第二导电型阱; 在硅衬底之上堆叠第一高介电常数绝缘膜和第一帽电介质膜; 从所述第二导电型阱的上方至少去除所述第一盖电介质膜; 在第一温度下进行第一退火，使包含在第一盖电介质膜中的元素扩散到位于第一导电型阱之上的第一高介电常数绝缘膜; 在第一退火之后，在硅衬底上层叠第二高介电常数绝缘膜和第二帽电介质膜; 去除设置在第一导电型阱之上的第二盖电介质膜; 以及在比所述第一温度低的第二温度下进行第二退火，以使包含在所述第二盖电介质膜中的元素扩散到位于所述第二导电型阱之上的所述第二高介电常数绝缘膜中。

8. 发明申请

US20120326315A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US20120326315A1
公开(公告)日：2012-12-27
申请号：US13605020
申请日：2012-09-06
申请人： Shinichi Akiyama , Kazuo Kawamura , Hisaya Sakai , Hirofumi Watatani , Kazuya Okubo
发明人： Shinichi Akiyama , Kazuo Kawamura , Hisaya Sakai , Hirofumi Watatani , Kazuya Okubo
IPC分类号： H01L23/52
CPC分类号： H01L23/53238 , H01L21/2855 , H01L21/76805 , H01L21/76844 , H01L21/76846 , H01L21/76865 , H01L21/76873 , H01L23/5226 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device has forming, in a dielectric film, a first opening and a second opening located in the first opening, forming a first metal film containing a first metal over a whole surface, etching the first metal film at a bottom of the second opening using a sputtering process and forming a second metal film containing a second metal over the whole surface, and burying a conductive material in the second opening and the first opening.
摘要翻译：制造半导体器件的方法在电介质膜中形成位于第一开口中的第一开口和第二开口，在整个表面上形成含有第一金属的第一金属膜，在底部蚀刻第一金属膜的第二开口，并且在整个表面上形成含有第二金属的第二金属膜，并且在第二开口和第一开口中埋入导电材料。

9. 发明授权

US07984453B2 Event notifications relating to system failures in scalable systems 有权
标题翻译：有关可扩展系统中的系统故障的事件通知
公开(公告)号：US07984453B2
公开(公告)日：2011-07-19
申请号：US11857261
申请日：2007-09-18
申请人： Gail A. Alverson , Robert L. Alverson , Daniel C. Duval , Eric A. Hoffman , Laurence S. Kaplan , Matthew Kelly , Kazuya Okubo , Mark Swan , Asaph Zemach
发明人： Gail A. Alverson , Robert L. Alverson , Daniel C. Duval , Eric A. Hoffman , Laurence S. Kaplan , Matthew Kelly , Kazuya Okubo , Mark Swan , Asaph Zemach
IPC分类号： G06F13/00 , G06F11/00
CPC分类号： G06F11/0781 , G06F11/0709 , G06F11/3048 , G06F11/3072
摘要： An availability system is provided that includes a hierarchy of controllers for providing event notifications relating to availability of components of a scalable MPP system. A controller receives a subscription from a child controller that identifies an event type and a generator. The controller stores in a subscription store an indication that the subscription has been received from the child controller. When a parent controller has not yet been notified of a subscription with a matching event type and generator as indicated by the subscription store, the controller sends the subscription to the parent controller. When the parent controller has already been notified of a subscription with a matching event type and generator as indicated by the subscription store, the controller suppresses the sending of the subscription to the parent controller.
摘要翻译：提供了一种可用性系统，其包括用于提供与可伸缩MPP系统的组件的可用性相关的事件通知的控制器层级。控制器接收来自识别事件类型和发生器的子控制器的订阅。控制器在订阅存储器中存储已经从子控制器接收到订阅的指示。当父控制器尚未被通知订阅存储器所指示的匹配事件类型和生成器的订阅时，控制器将该订阅发送给父控制器。当父控制器已被通知具有由订阅存储所指示的匹配事件类型和生成器的订阅时，控制器禁止向父控制器发送订阅。

10. 发明授权

US07592256B2 Method of forming tungsten film 有权
标题翻译：形成钨膜的方法
公开(公告)号：US07592256B2
公开(公告)日：2009-09-22
申请号：US10486794
申请日：2002-08-07
申请人： Kazuya Okubo , Mitsuhiro Tachibana , Cheng Fang , Kohichi Sato , Hotaka Ishizuka
发明人： Kazuya Okubo , Mitsuhiro Tachibana , Cheng Fang , Kohichi Sato , Hotaka Ishizuka
IPC分类号： H01L21/44
CPC分类号： C23C16/45523 , C23C16/0281 , C23C16/14 , C23C16/4408 , H01L21/28556 , H01L21/76877
摘要： A method of forming a tungsten film on a surface of an object to be processed in a vessel capable of being vacuumized, includes the steps of forming a tungsten film by alternately repeating a reduction gas supplying process for supplying a reduction gas and a tungsten gas supplying process for supplying a tungsten-containing gas with an intervening purge process therebetween for supplying an inert gas while vacuumizing the vessel. A reduction gas supplying period of a reduction gas supplying process among the repeated reduction gas supplying processes is set to be longer than that of the remaining reduction gas supplying processes.
摘要翻译：在能够被真空化的容器中的待处理物体的表面上形成钨膜的方法包括以下步骤：通过交替重复用于供给还原气体的还原气体供给工序和供给钨的气体来形成钨膜用于在含有钨的气体之间进行中间吹扫处理以在对容器抽真空的同时供应惰性气体的方法。在反复进行的还原气体供给工序之间的还原气体供给工序的还原气体供给期间比剩余的还原气体供给工序的时间长。

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